Joseph R. Salfi, Ph.D.
Affiliations: | 2011 | Electrical and Computer Engineering | University of Toronto, Toronto, ON, Canada |
Area:
Electronics and Electrical Engineering, Condensed Matter Physics, Materials Science EngineeringGoogle:
"Joseph Salfi"Parents
Sign in to add mentor| Harry E. Ruda | grad student | University of Toronto | ||
| Harry Rudu | grad student | 2011 | University of Toronto | |
| (Carrier Transport and Sensing in Compound Semiconductor Nanowires.) | ||||
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Publications
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| Kobayashi T, Salfi J, Chua C, et al. (2020) Engineering long spin coherence times of spin-orbit qubits in silicon. Nature Materials |
| Ng KSH, Voisin B, Johnson BC, et al. (2020) Scanned Single-Electron Probe inside a Silicon Electronic Device. Acs Nano |
| Bayat A, Voisin B, Buchs G, et al. (2020) Certification of spin-based quantum simulators Physical Review A. 101 |
| Philippopoulos P, Chesi S, Salfi J, et al. (2019) Hole spin echo envelope modulations Physical Review B. 100: 125402 |
| van der Heijden J, Kobayashi T, House MG, et al. (2018) Readout and control of the spin-orbit states of two coupled acceptor atoms in a silicon transistor. Science Advances. 4: eaat9199 |
| Tankasala A, Salfi J, Bocquel J, et al. (2018) Two-electron states of a group-V donor in silicon from atomistic full configuration interactions Physical Review B. 97 |
| Abadillo-Uriel JC, Salfi J, Hu X, et al. (2018) Entanglement control and magic angles for acceptor qubits in Si Applied Physics Letters. 113: 012102 |
| Usman M, Voisin B, Salfi J, et al. (2017) Towards visualisation of central-cell-effects in scanning tunnelling microscope images of subsurface dopant qubits in silicon. Nanoscale |
| Salfi J, Mol JA, Culcer D, et al. (2016) Charge-Insensitive Single-Atom Spin-Orbit Qubit in Silicon. Physical Review Letters. 116: 246801 |
| Usman M, Bocquel J, Salfi J, et al. (2016) Spatial metrology of dopants in silicon with exact lattice site precision. Nature Nanotechnology |