Lingpeng Guan, Ph.D.
Affiliations: | 2006 | Hong Kong University of Science and Technology, Clear Water Bay, Kowloon, Hong Kong |
Area:
Electronics and Electrical EngineeringGoogle:
"Lingpeng Guan"Parents
Sign in to add mentor| Johnny K. O. Sin | grad student | 2006 | HKUST | |
| (Novel low voltage power semiconductor devices and IC technologies.) | ||||
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Publications
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| Ma X, Guan L, Xuan J, et al. (2016) Effect of polymorphisms in the CAMKMT gene on growth traits in Ujumqin sheep. Animal Genetics |
| Tian B, Wu Y, Huang H, et al. (2010) A New 20 V-Rated Buried-Oxide Trench-Gate Bipolar-Mode JFET FOR DC/DC Converters Ieee Transactions On Electron Devices. 57: 3531-3535 |
| Sun J, Jiang FXC, Guan L, et al. (2009) A New Isolation Technology for Automotive Power-Integrated-Circuit Applications Ieee Transactions On Electron Devices. 56: 2144-2149 |
| Ng JCW, Sin JKO, Guan L. (2008) A Novel Planar Power MOSFET With Laterally Uniform Body and Ion-Implanted JFET Region Ieee Electron Device Letters. 29: 375-377 |
| Guan L, Sin JKO. (2007) Transient Characterization of the Planar DMOS With a Metal/Poly-Si Replacement Gate Ieee Transactions On Electron Devices. 54: 1789-1792 |
| Guan L, Sin JKO, Liu H, et al. (2006) A fully integrated SOI RF MEMS technology for system-on-a-chip applications Ieee Transactions On Electron Devices. 53: 167-172 |
| Guan L, Sin JKO. (2006) A 30 V Self-Aligned Metal/Poly-Si Replacement Gate Planar DMOS for DC/DC Converters Ieee Electron Device Letters. 27: 920-922 |
| Guan L, Sin JKO, Xiong Z, et al. (2005) A novel SOI lateral-power MOSFET with a self-aligned drift region Ieee Electron Device Letters. 26: 264-266 |