Jeng-Ya Yeh, Ph.D.
Affiliations: | 2005 | University of Wisconsin, Madison, Madison, WI |
Area:
Electronics and Electrical EngineeringGoogle:
"Jeng-Ya Yeh"Parents
Sign in to add mentor| Luke J. Mawst | grad student | 2005 | UW Madison | |
| (Novel semiconductor diode light sources for chemical sensing applications.) | ||||
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Publications
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| Xu L, Patel D, Menoni CS, et al. (2012) Carrier recombination dynamics investigations of strain-compensated InGaAsN quantum wells Ieee Photonics Journal. 4: 2382-2389 |
| Xu L, Patel D, Menoni CS, et al. (2012) Experimental evidence of the impact of nitrogen on carrier capture and escape times in InGaAsN/GaAs Single quantum well Ieee Photonics Journal. 4: 2262-2271 |
| Xu L, Patel D, Menoni CS, et al. (2011) Investigation of the carrier escape and capture processes in InGaAsN quantum well lasers Ieee Photonic Society 24th Annual Meeting, Pho 2011. 682-683 |
| Mawst LJ, Huang JYT, Xu DP, et al. (2008) MOCVD-grown dilute nitride type II quantum wells Ieee Journal On Selected Topics in Quantum Electronics. 14: 979-991 |
| Yeh JY, Mawst LJ, Khandekar AA, et al. (2006) Long wavelength emission of InGaAsNGaAsSb type II "w" quantum wells Applied Physics Letters. 88: 1-3 |
| Yeh JY, Mawst LJ, Tansu N. (2005) The role of carrier transport on the current injection efficiency of InGaAsN quantum-well lasers Ieee Photonics Technology Letters. 17: 1779-1781 |
| Anton OH, Patel D, Menoni CS, et al. (2005) Frequency response of strain-compensated InGaAsN-GaAsP-GaAs SQW lasers Ieee Journal On Selected Topics in Quantum Electronics. 11: 1079-1088 |
| Shterengas L, Belenky GL, Yeh JY, et al. (2005) Differential gain and linewidth-enhancement factor in dilute-nitride GaAs-based 1.3-/spl mu/m diode lasers Ieee Journal On Selected Topics in Quantum Electronics. 11: 1063-1068 |
| Palmer DJ, Smowton PM, Blood P, et al. (2005) Effect of nitrogen on gain and efficiency in InGaAsN quantum-well lasers Applied Physics Letters. 86: 1-3 |
| Chang YH, Kuo HC, Chang YA, et al. (2004) Temperature dependent photoluminescence of highly strained InGaAsN/GaAs Quantum Well ( λ=1.28-1.45 μm) with GaAsP strain-compensated layer The Japan Society of Applied Physics. 2004: 82-83 |