YouSeok Suh, Ph.D.
Affiliations: | 2003 | North Carolina State University, Raleigh, NC |
Area:
Electronics and Electrical EngineeringGoogle:
"YouSeok Suh"Parents
Sign in to add mentor| Veena Misra | grad student | 2003 | NCSU | |
| (Fabrication and evaluation of devices containing high K gate dielectrics and metal gate electrodes for the 70 and 50NM technology nodes of ITRS.) | ||||
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Publications
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| Suh Y, Lazar H, Chen B, et al. (2005) Electrical Characteristics of HfO[sub 2] Dielectrics with Ru Metal Gate Electrodes Journal of the Electrochemical Society. 152: F138 |
| Chen B, Suh Y, Lee J, et al. (2005) Physical and electrical analysis of RuxYy alloys for gate electrode applications Applied Physics Letters. 86: 053502 |
| Suh Y, Heuss G, Misra V. (2004) Characteristics of TaSi[sub x]N[sub y] thin films as gate electrodes for dual gate Si-complementary metal-oxide-semiconductor devices Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures. 22: 175 |
| Suh Y, Park D, Jang S. (2004) Investigation of stress behaviors and mechanism of void formation in sputtered TiSix films Thin Solid Films. 450: 341-345 |
| Suh Y, Heuss GP, Misra V, et al. (2003) Thermal Stability of TaSi[sub x]N[sub y] Films Deposited by Reactive Sputtering on SiO[sub 2] Journal of the Electrochemical Society. 150: F79 |
| Suh Y, Heuss GP, Lee J, et al. (2003) Effect of the composition on the electrical properties of TaSi/sub x/N y metal gate electrodes Ieee Electron Device Letters. 24: 439-441 |
| Suh Y, Heuss G, Lee J, et al. (2002) The Effects of Nitrogen on Electrical and Structural Properties in TaSixNy/SiO2/p-Si MOS Capacitors Mrs Proceedings. 716 |
| Suh Y, Heuss GP, Misra V. (2002) Electrical characteristics of TaSixNy/SiO2/Si structures by Fowler–Nordheim current analysis Applied Physics Letters. 80: 1403-1405 |
| Zhong H, Heuss G, Suh Y, et al. (2001) Promising Gate Stacks with Ru & RuO2 Gate Electrodes and Y-silicate Dielectrics Mrs Proceedings. 670 |
| Kim S, Hwang I, Rhee J, et al. (2001) Effects of the Process Variable on Sputtered TiSi x Polycide Gate Electrodes for sub-0.15 μm Memory Device Application Journal of the Electrochemical Society. 148 |