Balaji Raghothamachar, Ph.D.
Affiliations: | 2001 | Stony Brook University, Stony Brook, NY, United States |
Area:
Materials Science EngineeringGoogle:
"Balaji Raghothamachar"Parents
Sign in to add mentor| Michael Dudley | grad student | 2001 | SUNY Stony Brook | |
| (Synchrotron white beam X -ray characterization of growth defects in bulk compound semiconductors.) | ||||
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Publications
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| Huang VW, Liu Y, Raghothamachar B, et al. (2023) Upgraded for rapid recognition and fitting of Laue patterns from crystals with unknown orientations. Journal of Applied Crystallography. 56: 1610-1615 |
| Dalmau R, Britt J, Fang HY, et al. (2020) X-Ray Topography Characterization of Large Diameter AlN Single Crystal Substrates Materials Science Forum. 1004: 63-68 |
| Ailihumaer T, Raghothamachar B, Dudley M, et al. (2020) Investigation of Dislocation Behavior at the Early Stage of PVT-Grown 4H-SiC Crystals Materials Science Forum. 1004: 44-50 |
| Ailihumaer T, Peng H, Raghothamachar B, et al. (2020) Synchrotron X-Ray Topography Study on the Relationship between Local Basal Plane Bending and Basal Plane Dislocations in PVT-Grown 4H-SiC Substrate Wafers Materials Science Forum. 1004: 393-400 |
| Yang L, Zhao LX, Wu HW, et al. (2020) Characterization and Reduction of Defects in 4H-SiC Substrate and Homo-Epitaxial Wafer Materials Science Forum. 1004: 387-392 |
| Manning I, Matsuda Y, Chung G, et al. (2020) Progress in Bulk 4H SiC Crystal Growth for 150 mm Wafer Production Materials Science Forum. 1004: 37-43 |
| Renz AB, Shah VA, Vavasour OJ, et al. (2020) The improvement of Mo/4H-SiC Schottky diodes via a P2O5 surface passivation treatment Journal of Applied Physics. 127: 025704 |
| Raghothamachar B, Liu Y, Peng H, et al. (2020) X-ray topography characterization of gallium nitride substrates for power device development Journal of Crystal Growth. 544: 125709 |
| Peng H, Ailihumaer T, Liu Y, et al. (2020) Characterization of defects and strain in the (AlxGa(1−x))0.5In0.5P/ GaAs system by synchrotron X-ray topography Journal of Crystal Growth. 533: 125458 |
| Peng H, Ailihumaer T, Raghothamachar B, et al. (2020) Ray Tracing Simulation of Images of Dislocations and Inclusions on X-Ray Topographs of GaAs Epitaxial Wafers Journal of Electronic Materials. 49: 3472-3480 |