Shayan M. Byrappa, Ph.D.
Affiliations: | 2013 | Materials Science and Engineering | Stony Brook University, Stony Brook, NY, United States |
Area:
Materials Science EngineeringGoogle:
"Shayan Byrappa"Parents
Sign in to add mentor| Michael Dudley | grad student | 2013 | SUNY Stony Brook | |
| (Defect studies in 4H- Silicon Carbide PVT grown bulk crystals, CVD grown epilayers and devices.) | ||||
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Publications
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| Wang H, Wu F, Byrappa S, et al. (2014) Synchrotron topography studies of the operation of double-ended Frank-Read partial dislocation sources in 4H-SiC Journal of Crystal Growth. 401: 423-430 |
| Wang H, Sun S, Dudley M, et al. (2013) Quantitative comparison between dislocation densities in offcut 4H-SiC wafers measured using synchrotron X-ray topography and molten KOH etching Journal of Electronic Materials. 42: 794-798 |
| Wu F, Wang H, Byrappa S, et al. (2013) Characterization and formation mechanism of six pointed star-type stacking faults in 4H-SiC Journal of Electronic Materials. 42: 787-793 |
| Wang H, Wu F, Byrappa S, et al. (2012) Combined application of section and projection topography to defect analysis in PVT-grown 4H-SiC Materials Research Society Symposium Proceedings. 1433: 71-76 |
| Dudley M, Wang H, Wu F, et al. (2012) Synchrotron topography studies of growth and deformation-induced dislocations in 4H-SiC Materials Research Society Symposium Proceedings. 1433: 59-70 |
| Wu F, Byrappa S, Wang H, et al. (2012) Simulation of grazing-incidence synchrotron X-ray topographic images of threading c+a dislocations in 4H-SiC Materials Research Society Symposium Proceedings. 1433: 41-46 |
| Wang H, Wu F, Byrappa S, et al. (2012) Basal plane dislocation multiplication via the Hopping Frank-Read source mechanism in 4H-SiC Applied Physics Letters. 100 |
| Müller SG, Sanchez EK, Hansen DM, et al. (2012) Volume production of high quality SiC substrates and epitaxial layers: Defect trends and device applications Journal of Crystal Growth. 352: 39-42 |
| Dudley M, Wu F, Wang H, et al. (2011) Stacking faults created by the combined deflection of threading dislocations of Burgers vector c and c+a during the physical vapor transport growth of 4H-SiC Applied Physics Letters. 98 |
| Dudley M, Zhang N, Zhang Y, et al. (2010) Characterization of 100 mm diameter 4H-Silicon carbide crystals with extremely low basal plane dislocation density Materials Science Forum. 645: 291-294 |