Sanjit S. Dang, Ph.D.
Affiliations: | 2000 | University of Illinois at Chicago, Chicago, IL, United States |
Area:
Chemical Engineering, Electronics and Electrical Engineering, Condensed Matter PhysicsGoogle:
"Sanjit Dang"Parents
Sign in to add mentorChristos G. Takoudis | grad student | 2000 | University of Illinois, Chicago | |
(Fundamental studies on ultra -thin oxynitrides and nitrides of silicon and silicon-germanium.) |
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Publications
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Dasgupta A, Matthes RA, Takoudis CG, et al. (2002) Web-based instruction on the fundamentals and design of micro- and nanoelectronic processes: Innovations, challenges and benefits International Journal of Engineering Education. 18: 539-549 |
Dang SS, Takoudis CG. (2000) Angle-resolved XPS studies of interfacial bonding states in silicon oxynitrides fabricated using different thermal methodologies Materials Research Society Symposium - Proceedings. 586: 99-104 |
Dang SS, Takoudis CG. (2000) Rate-limiting steps during nitrogen incorporation in furnace-grown silicon oxynitrides: effects on wafer-to-wafer uniformity Thin Solid Films. 366: 225-231 |
Dang SS, Takoudis CG. (2000) Process improvements for reductions in total charge and interface trap densities oftiffirmally-grown sub-3.5nm-tfflck silicon nitrides Materials Research Society Symposium - Proceedings. 592: 213-218 |
Dang SS, Matthes RA, Takoudis CG. (2000) Web-based course in the fundamentals of microelectronics processing Chemical Engineering Education. 34: 350-355 |
Dang SS, Takoudis CG. (1999) Process Improvements for Reductions in Total Charge and Interface Trap Densities of Thermally-Grown Sub-3.5nm-Thick Silicon Nitrides Mrs Proceedings. 592 |
Dang SS, Takoudis CG. (1999) Optimization of bimodal nitrogen concentration profiles in silicon oxynitrides Journal of Applied Physics. 86: 1326-1330 |
Dang SS, Takoudis CG. (1998) Instruction via web-based semiconductor simulation tools: The case of "fundamentals and design of microelectronics processing" Chemical Engineering Education. 32: 242-245 |