Jae-Hyun Ryou, Ph.D.

2001 University of Texas at Austin, Austin, Texas, U.S.A. 
Materials Science Engineering, Electronics and Electrical Engineering
"Jae-Hyun Ryou"


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Russell D. Dupuis grad student 2001 UT Austin
 (III-phosphide semiconductor self -assembled quantum dots grown by metallorganic chemical vapor deposition.)
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Song Y, Lundh JS, Wang W, et al. (2020) The Doping Dependence of the Thermal Conductivity of Bulk Gallium Nitride Substrates Journal of Electronic Packaging. 142
Ren Z, Lu Y, Yao H, et al. (2019) III-Nitride Deep UV LED Without Electron Blocking Layer Ieee Photonics Journal. 11: 1-11
Singh S, Shervin S, Sun H, et al. (2018) Using Mosaicity to Tune Thermal Transport in Polycrystalline AlN Thin Films. Acs Applied Materials & Interfaces
Asadirad M, Pouladi S, Shervin S, et al. (2017) Numerical Simulation for Operation of Flexible Thin-Film Transistors With Bending Ieee Electron Device Letters. 38: 217-220
Ryou JH, Sohn YK, Hwang DE, et al. (2016) Engineering of bacterial exotoxins for highly efficient and receptor-specific intracellular delivery of diverse cargos. Biotechnology and Bioengineering
Park HJ, Bae HJ, Park JB, et al. (2016) Enhanced wall-plug efficiency in monolithically integrated vertical light-emitting-diode cells based on III-nitride heterostructures Journal of Vacuum Science and Technology B: Nanotechnology and Microelectronics. 34
Lee KH, Asadirad M, Shervin S, et al. (2016) Thin-Film-Flip-Chip LEDs Grown on Si Substrate Using Wafer-Level Chip-Scale Package Ieee Photonics Technology Letters. 28: 1956-1959
Kim SH, Singh S, Oh SK, et al. (2016) Visible Flip-Chip Light-Emitting Diodes on Flexible Ceramic Substrate With Improved Thermal Management Ieee Electron Device Letters. 37: 615-617
Kim S, Ryou JH, Dupuis RD, et al. (2016) Reduced gate leakage current of AlInN:Mg/GaN high electron mobility transistors Electronics Letters. 52: 157-159
Shervin S, Kim SH, Asadirad M, et al. (2016) Bendable III-N Visible Light-Emitting Diodes beyond Mechanical Flexibility: Theoretical Study on Quantum Efficiency Improvement and Color Tunability by External Strain Acs Photonics. 3: 486-493
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