Uttiya Chowdhury, Ph.D.
Affiliations: | 2002 | University of Texas at Austin, Austin, Texas, U.S.A. |
Area:
Electronics and Electrical Engineering, Materials Science EngineeringGoogle:
"Uttiya Chowdhury"Parents
Sign in to add mentorRussell D. Dupuis | grad student | 2002 | UT Austin | |
(MOCVD growth for UV photodetectors and light emitting diodes.) |
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Publications
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Wong MM, Chowdhury U, Sicault D, et al. (2003) Improved performance of AlGaN/GaN heterojunction field-effect transistors using delta doping and a binary barrier Japanese Journal of Applied Physics, Part 2: Letters. 42: L353-L355 |
Zhu TG, Chowdhury U, Denyszyn JC, et al. (2003) AlGaN/AlGaN UV light-emitting diodes grown on sapphire by metalorganic chemical vapor deposition Journal of Crystal Growth. 248: 548-551 |
Chowdhury U, Wong MM, Collins CJ, et al. (2003) High-performance solar-blind photodetector using an Al0.6Ga0.4N n-type window layer Journal of Crystal Growth. 248: 552-555 |
Chowdhury U, Collins CJ, Wong MM, et al. (2002) Epitaxial growth for solar-blind AlGaN photodetector imaging arrays by metalorganic chemical vapor deposition Materials Research Society Symposium - Proceedings. 743: 499-503 |
Hull BA, Mohney SE, Chowdhury U, et al. (2002) Contacts to High Aluminum Fraction p-type Aluminum Gallium Nitride Mrs Proceedings. 743 |
Martínez RE, Appelbaum I, Reddy CV, et al. (2002) Electron transport through strongly coupled AlInP/GaInP superlattices Applied Physics Letters. 81: 3576-3578 |
Collins CJ, Chowdhury U, Wong MM, et al. (2002) Improved solar-blind detectivity using an AlxGa1-xN heterojunction p-i-n photodiode Applied Physics Letters. 80: 3754-3756 |
Collins CJ, Chowdhury U, Wong MM, et al. (2002) Improved solar-blind external quantum efficiency of back-illuminated AlxGa1-xN heterojunction pin photodiodes Electronics Letters. 38: 824-826 |
Wong MM, Chowdhury U, Sicault D, et al. (2002) Delta-doped AlGaN/AlN/GaN microwave HFETs grown by metalorganic chemical vapour deposition Electronics Letters. 38: 428-429 |
Zhu TG, Chowdhury U, Wong MM, et al. (2002) GaN and AlGaN high-voltage rectifiers grown by metal-organic chemical-vapor deposition Journal of Electronic Materials. 31: 406-410 |