Christoph Kadow, Ph.D.

Affiliations: 
2000 University of California, Santa Barbara, Santa Barbara, CA, United States 
Area:
Materials Science Engineering, Electronics and Electrical Engineering, Condensed Matter Physics
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"Christoph Kadow"
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Parents

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Arthur C. Gossard grad student 2000 UC Santa Barbara
 (Self-assembled erbium arsenide islands in gallium arsenide for photomixer devices.)
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Publications

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Gelfand IJ, Amasha S, Zumbühl DM, et al. (2006) Surface-gated quantum hall effect in an inas heterostructure Applied Physics Letters. 88
Kadow C, Gossard AC, Rodwell MJW. (2005) Regrown-emitter InP heterojunction bisucpolar transistors Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 23: 1140-1143
Kadow C, Dahlström M, Bae JU, et al. (2005) n+-InAs-InAlAs recess gate technology for InAs-channel millimeter-wave HFETs Ieee Transactions On Electron Devices. 52: 151-158
Lin HK, Kadow C, Bae JU, et al. (2005) Design and characteristics of strained InAs/InAlAs composite-channel heterostructure field-effect transistors Journal of Applied Physics. 97
Jho YD, Wang X, Kyrychenko FV, et al. (2004) Interband magneto-spectroscopy of a high-density two-dimensional electron gas in a strong in-plane magnetic field International Journal of Modern Physics B. 18: 3831-3834
Hacker JB, Bergman J, Nagy G, et al. (2004) An ultra-low power InAs/AlSb HEMT Ka-band low-noise amplifier Ieee Microwave and Wireless Components Letters. 14: 156-158
Lin HK, Kadow C, Dahlström M, et al. (2004) InAs/InAsP composite channels for antimonide-based field-effect transistors Applied Physics Letters. 84: 437-439
Hanson MP, Driscoll DC, Kadow C, et al. (2004) Metal/semiconductor superlattices containing semimetallic ErSb nanoparticles in GaSb Applied Physics Letters. 84: 221-223
Kyrychenko FV, Jho YD, Kono J, et al. (2004) Interband magnetoabsorption study of the shift of the Fermi energy of a 2DEG with an in-plane magnetic field Physica E: Low-Dimensional Systems and Nanostructures. 22: 624-627
Scott DW, Kadow C, Dong Y, et al. (2004) Low-resistance n-type polycrystalline InAs grown by molecular beam epitaxy Journal of Crystal Growth. 267: 35-41
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