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Cammy Abernathy

Affiliations: 
University of Florida, Gainesville, Gainesville, FL, United States 
Area:
Materials Science Engineering, Condensed Matter Physics
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"Cammy Abernathy"
Bio:

https://books.google.com/books?id=sZMvAQAAIAAJ

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Parents

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Clayton Wilson Bates grad student 1985 Stanford
 (Chemical spray pyrolysis of copper indium diselenide thin films and devices.)

Children

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Brent P. Gila grad student 2000 UF Gainesville (E-Tree)
Kang-Nyung Lee grad student 2000 UF Gainesville
Mark E. Overberg grad student 2001 UF Gainesville
Andrea H. Onstine grad student 2004 UF Gainesville
Gerald T. Thaler grad student 2004 UF Gainesville
Rachel M. Frazier grad student 2005 UF Gainesville
Danielle O. Stodilka grad student 2005 UF Gainesville
Allen M. West grad student 2005 UF Gainesville
Kimberly K. Allums grad student 2006 UF Gainesville
Jennifer K. Hite grad student 2006 UF Gainesville
Mark S. Hlad grad student 2007 UF Gainesville
Andrew M. Herrero grad student 2008 UF Gainesville
Anthony D. Stewart grad student 2008 UF Gainesville
Ryan P. Davies grad student 2009 UF Gainesville

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Publications

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Hite J, Frazier RM, Davies RP, et al. (2019) Ferromagnetic Properties of GaGdN Co-Doped with Si Ecs Transactions. 3: 409-414
Douglas EA, Zeenberg D, Maeda M, et al. (2013) Depth-Resolved Cathodoluminescence Spectroscopy Characterization of RF Stressed AlGaN/GaN High Electron Mobility Transistors Ecs Solid State Letters. 2: Q39-Q42
Douglas EA, Gila BP, Abernathy CR, et al. (2013) GaN High Electron Mobility Transistor Degradation: Effect of RF Stress Ecs Transactions. 50: 261-272
Davies RP, Gila BP, Abernathy CR, et al. (2010) Defect-enhanced ferromagnetism in Gd- and Si-coimplanted GaN Applied Physics Letters. 96: 212502
Douglas EA, Cheney DP, Chen KHP, et al. (2009) GaAs HEMT Reliability and Degradation Mechanisms after Long Term Stress Testing Mrs Proceedings. 1195
Lugo FJ, Kim HS, Pearton SJ, et al. (2009) Rectifying ZnO:Ag∕ZnO:Ga Thin-Film Junctions Electrochemical and Solid-State Letters. 12: H188
Davies RP, Abernathy CR, Pearton SJ, et al. (2009) REVIEW OF RECENT ADVANCES IN TRANSITION AND LANTHANIDE METAL–DOPED GaN AND ZnO Chemical Engineering Communications. 196: 1030-1053
Herrero AM, Gila BP, Gerger A, et al. (2009) Environmental stability of candidate dielectrics for GaN-based device applications Journal of Applied Physics. 106: 074105
Stewart AD, Scheuermann AG, Gerger AP, et al. (2008) Optimization of Samarium Oxide Deposition on Gallium Arsenide Mrs Proceedings. 1108
Kang BS, Wang HT, Ren F, et al. (2008) Exhaled-Breath Detection Using AlGaN∕GaN High Electron Mobility Transistors Integrated with a Peltier Element Electrochemical and Solid-State Letters. 11: J19
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