Harry Wieder
Affiliations: | 1981-1993 | Electrical and Computer Engineering | University of California, San Diego, La Jolla, CA |
Area:
solid-state electronics, quantum wells, superlattice materials and devicesWebsite:
http://ece.ucsd.edu/press-clips/passing-of-professor-emeritus-applied-physics-herman-harry-wiederGoogle:
"Herman Wieder" OR "Harry Wieder"Bio:
(1919 - 2018)
DOI: 10.1063/PT.6.4o.20180621a
Mean distance: (not calculated yet)
Children
Sign in to add trainee| Rachel S. Goldman | grad student | 1995 | UCSD (E-Tree) |
| Huseyin Sari | grad student | 2001 | UCSD (BME Tree) |
| Ryan P. Lu | grad student | 2002 | UCSD |
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Publications
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| Prasad C, Ferry DK, Wieder HH. (2004) Energy relaxation studies in In0.52Al0.48As/In 0.53Ga0.47As/In0.52Al0.48As two-dimensional electron gases and quantum wires Semiconductor Science and Technology. 19 |
| Vasileska D, Prasad C, Wieder HH, et al. (2003) Green's function approach for transport calculation in a In 0.53Ga0.47As/In0.52Al0.48As modulation-doped heterostructure Physica Status Solidi (B) Basic Research. 239: 103-109 |
| Vasileska D, Prasad C, Wieder HH, et al. (2003) Green's function approach for transport calculation in a In0.53Ga0.47As/In0.52Al0.48As modulation-doped heterostructure Journal of Applied Physics. 93: 3359-3363 |
| Prasad C, Ferry DK, Vasileska D, et al. (2003) Electron-phonon interaction studies in an In0.52Al 0.48As/In0.53Ga0.47As/In0.52Al 0.48As quantum well structure Physica E: Low-Dimensional Systems and Nanostructures. 19: 215-220 |
| Affentauschegg C, Wieder HH. (2001) Properties of InAs/InAlAs heterostructures Semiconductor Science and Technology. 16: 708-714 |
| Goldman RS, Kavanagh KL, Wieder HH, et al. (1998) Effects of GaAs substrate misorientation on strain relaxation in In |
| Shen L, Wieder HH, Chang WSC. (1996) Electroabsorption modulation at 1.3 μm on GaAs substrates using a step-graded low temperature grown InAlAs buffer Ieee Photonics Technology Letters. 8: 352-354 |
| Goldman RS, Kavanagh KL, Wieder HH, et al. (1996) Correlation of buffer strain relaxation modes with transport properties of two-dimensional electron gases Journal of Applied Physics. 80: 6849-6854 |
| Mei XB, Loi KK, Wieder HH, et al. (1996) Strain-compensated InAsP/GaInP multiple quantum wells for 1.3 μm waveguide modulators Applied Physics Letters. 68: 90-92 |
| Young AP, Wieder HH. (1996) Influence of surface and interface states on the electrical properties of an Al |