Shyam P. Murarka

Affiliations: 
Rensselaer Polytechnic Institute, Troy, NY, United States 
Area:
Materials Science Engineering, Electronics and Electrical Engineering
Google:
"Shyam Murarka"
BETA: Related publications

Publications

You can help our author matching system! If you notice any publications incorrectly attributed to this author, please sign in and mark matches as correct or incorrect.

Wang PI, Juneja JS, Murarka SP, et al. (2006) Stability of Cu on epoxy siloxane polymer under bias temperature stress Journal of the Electrochemical Society. 153
Wang PI, Juneja JS, Murarka S, et al. (2004) Novel epoxy siloxane polymer as low-k dielectric Materials Research Society Symposium Proceedings. 812: 31-36
Mallikarjunan A, Murarka SP, Lu TM. (2004) Separation of copper ion-induced and intrinsic polymer instabilities in polyarylether using triangular voltage sweep Journal of Applied Physics. 95: 1216-1221
Mallikarjunan A, Juneja J, Yang G, et al. (2002) The Effect of Interfacial Chemistry on Metal Ion Penetration into Polymeric Films Mrs Proceedings. 734
Mallikarjunan A, Murarka SP, Lu TM. (2002) Mobile ion detection in organosiloxane polymer using triangular voltage sweep Journal of the Electrochemical Society. 149
Cui H, Bhat IB, Murarka SP, et al. (2002) Copper drift in methyl-doped silicon oxide film Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 20: 1987-1993
Lu H, Cui H, Bhat I, et al. (2002) Characterization of methyl-doped silicon oxide film deposited using Flowfill™ chemical vapor deposition technology Journal of Vacuum Science & Technology B. 20: 828-833
Wang PI, Murarka SP, Kaminski DA, et al. (2001) Surface Segregation of Al of the Bilayers of Pure Cu and Cu-Al Alloy Films Journal of the Electrochemical Society. 148
Wang PI, Murarka SP, Yang GR, et al. (2001) Evolution of the Cu-Al Alloy/SiO2 Interfaces during Bias Temperature Stressing Journal of the Electrochemical Society. 148
Krishnamoorthy A, Chanda K, Murarka SP, et al. (2001) Self-assembled near-zero-thickness molecular layers as diffusion barriers for Cu metallization Applied Physics Letters. 78: 2467-2469
See more...