Fitih M. Mohammed, Ph.D.
Affiliations: | 2007 | University of Illinois, Urbana-Champaign, Urbana-Champaign, IL |
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Materials Science EngineeringGoogle:
"Fitih Mohammed"Parents
Sign in to add mentorIlesanmi Adesida | grad student | 2007 | UIUC | |
(Foundations of ohmic contact formation on aluminum gallium nitride/gallium nitride heterostructures.) |
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Publications
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Wang L, Mohammed FM, Adesida I. (2008) Formation mechanism of Ohmic contacts on AlGaN∕GaN heterostructure: Electrical and microstructural characterizations Journal of Applied Physics. 103: 93516 |
Mohammed FM, Wang L, Adesida I. (2007) First-layer Si metallizations for thermally stable and smooth Ohmic contacts for AlGaN∕GaN high electron mobility transistors Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures. 25: 324 |
Wang L, Mohammed FM, Ofuonye B, et al. (2007) Ohmic contacts to n + -GaN capped AlGaN /AlN/GaN high electron mobility transistors Applied Physics Letters. 91: 12113 |
Mohammed FM, Wang L, Koo HJ, et al. (2007) Anatomy-performance correlation in Ti-based contact metallizations on AlGaNGaN heterostructures Journal of Applied Physics. 101 |
Wang L, Mohammed FM, Adesida I. (2007) Differences in the reaction kinetics and contact formation mechanisms of annealed Ti∕Al∕Mo∕Au Ohmic contacts on n-GaN and AlGaN∕GaN epilayers Journal of Applied Physics. 101: 13702 |
Adesida I, Mohammed FM, Wang L, et al. (2006) Methods and Mechanisms for Ohmic Contacts on AlGaN/GaN HEMTs The Japan Society of Applied Physics. 2006: 958-959 |
Zhao W, Mohammed FM, Adesida I. (2006) Application of the Ag-Based Ohmic Contact to the Realization of Thermally-Stable InAlAs/InGaAs/InP High Electron Mobility Transistors Japanese Journal of Applied Physics. 45: 7632-7636 |
Basu A, Mohammed FM, Guo S, et al. (2006) Mo∕Al∕Mo∕Au Ohmic contact scheme for Al[sub x]Ga[sub 1−x]N∕GaN high electron mobility transistors annealed at 500 °C Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures. 24: L16 |
Mohammed FM, Wang L, Adesida I, et al. (2006) The role of barrier layer on Ohmic performance of Ti∕Al-based contact metallizations on AlGaN∕GaN heterostructures Journal of Applied Physics. 100: 23708 |
Mohammed FM, Wang L, Adesida I. (2006) Ultralow resistance Si-containing Ti∕Al∕Mo∕Au Ohmic contacts with large processing window for AlGaN∕GaN heterostructures Applied Physics Letters. 88: 212107 |