Martin W. Dvorak, Ph.D.

Affiliations: 
2002 Simon Fraser University, Burnaby, British Columbia, Canada 
Area:
Materials Science Engineering
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"Martin Dvorak"

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Colombo R. Bolognesi grad student 2002 Simon Fraser
 (Design, fabrication and characterization of ultra high speed indium phosphide/gallium arsenic antimide/indium phosphide double heterojunction bipolar transistors.)
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Publications

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Bolognesi CR, Dvorak MW, Matine N, et al. (2002) Ultrahigh Performance Staggered Lineup (“Type-II”) InP/GaAsSb/InP NpN Double Heterojunction Bipolar Transistors Japanese Journal of Applied Physics. 41: 1131-1135
Dvorak MW, Bolognesi CR, Pitts OJ, et al. (2001) 300 GHz InP/GaAsSb/InP double HBTs with high current capability and BV/sub CEO/>6 V Ieee Electron Device Letters. 22: 361-363
Fink V, Chevalier E, Pitts OJ, et al. (2001) Anisotropic resistivity correlated with atomic ordering in p-type GaAsSb Applied Physics Letters. 79: 2384-2386
Dvorak MW, Matine N, Bolognesi CR, et al. (2000) Design and performance of InP/GaAsSb/InP double heterojunction bipolar transistors Journal of Vacuum Science & Technology a: Vacuum, Surfaces, and Films. 18: 761-764
Maher H, DiSanto DW, Dvorak MW, et al. (2000) High-speed AlGaN/GaN HFETs fabricated by wet etching mesa isolation Electronics Letters. 36: 1969-1971
Watkins SP, Pitts OJ, Dale C, et al. (2000) Heavily carbon-doped GaAsSb grown on InP for HBT applications Journal of Crystal Growth. 221: 59-65
Matine N, Dvorak MW, Pelouard J, et al. (1999) Fabrication and Characterization of InP Heterojunction Bipolar Transistors with Emitter Edges Parallel to [001] and [010] Crystal Orientations Japanese Journal of Applied Physics. 38: 1200-1203
Bolognesi CR, Dvorak MW, Chow DH. (1999) Impact Ionization Effects On The Microwave Performance Of Inas Channel Heterostructure Field-Effect Transistors : The Role Of Channel Quantization Japanese Journal of Applied Physics. 38: 1190-1194
Xu XG, Hu J, Watkins SP, et al. (1999) Metalorganic vapor phase epitaxy of high-quality GaAs0.5Sb0.5 and its application to heterostructure bipolar transistors Applied Physics Letters. 74: 976-978
Matine N, Dvorak M, Bolognesi C, et al. (1998) Nearly ideal InP/GaAsSb/InP double heterojunction bipolar transistors with ballistically launched collector electrons Electronics Letters. 34: 1700
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