Dimitris Pavlidis
Affiliations: | University of Michigan, Ann Arbor, Ann Arbor, MI |
Area:
Electronics and Electrical EngineeringWebsite:
https://mtt.org/profile/dimitris-pavlidis/Google:
"Dimitris Pavlidis"Bio:
Children
Sign in to add trainee| Egor I. Alekseev | grad student | 2000 | University of Michigan |
| Jae-Woo Park | grad student | 2000 | University of Michigan |
| Delong Cui | grad student | 2001 | University of Michigan |
| Shuo-Hung Hsu | grad student | 2003 | University of Michigan |
| Seth M. Hubbard | grad student | 2005 | University of Michigan |
| Pouya Valizadeh | grad student | 2005 | University of Michigan |
BETA: Related publications
See more...
Publications
|
You can help our author matching system! If you notice any publications incorrectly attributed to this author, please sign in and mark matches as correct or incorrect. |
| Yilmazoglu O, Evtukh A, Al-Daffaie S, et al. (2014) Electron field emission from nanostructured semiconductors under photo illumination Turkish Journal of Physics. 38: 543-562 |
| Jin C, Pavlidis D, Considine L. (2012) DC and High-Frequency Characteristics of GaN Schottky Varactors for Frequency Multiplication Ieice Transactions On Electronics. 95: 1348-1353 |
| Yilmazoglu O, Considine L, Joshi R, et al. (2012) Monochromatic electron-emission from planar AlN/GaN multilayers with carbon nanotube gate electrode Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena. 30: 042203 |
| Evtukh A, Yilmazoglu O, Litovchenko V, et al. (2012) GaN surface electron field emission efficiency enhancement by low-energy photon illumination Journal of Vacuum Science & Technology B. 30: 22206 |
| Stolz A, Cho E, Dogheche E, et al. (2011) Optical waveguide loss minimized into gallium nitride based structures grown by metal organic vapor phase epitaxy Applied Physics Letters. 98: 161903 |
| Seo S, Ghose K, Zhao GY, et al. (2008) AIN/GaN metal insulator semiconductor field effect transistor on sapphire substrate Ieice Transactions On Electronics. 994-1000 |
| Sigmund J, Lampin J, Ivannikov V, et al. (2008) Low-Temperature Grown GaAsSb with Sub-Picosecond Photocarrier Lifetime for Continuous-Wave Terahertz Measurements Ieice Transactions On Electronics. 91: 1058-1062 |
| Seo S, Zhao GY, Pavlidis D. (2008) Power characteristics of AIN/GaN MISFETs on sapphire substrate Electronics Letters. 44: 244-245 |
| Sigmund J, Pavlidis D, Hartnagel HL, et al. (2006) Nonstoichiometric growth and cluster formation in low temperature grown GaAsSb for terahertz-applications Journal of Vacuum Science & Technology B. 24: 1556-1558 |
| Cho E, Pavlidis D, Zhao G, et al. (2006) Improvement of CO sensitivity in GaN-based gas sensors Ieice Transactions On Electronics. 1047-1051 |