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Xiu Xing, Ph.D.

Affiliations: 
2013 University of Notre Dame, Notre Dame, IN, United States 
Area:
Electronics and Electrical Engineering, General Engineering
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"Xiu Xing"
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Patrick J. Fay grad student 2013 Notre Dame
 (Pseudomorphic In0.22Ga0.78As-channel MOSFETs using InAlP oxide as the gate dielectric for RF applications.)

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Publications

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Wang R, Saunier P, Xing X, et al. (2010) Gate-recessed enhancement-mode InAlN/AlN/GaN HEMTs with 1.9-A/mm drain current density and 800-ms/mm transconductance Ieee Electron Device Letters. 31: 1383-1385
Xing X, Fay PJ. (2010) Enhancement-mode pseudomorphic In0.22Ga0.78As-Channel MOSFETs with ultrathin inalp native oxide gate dielectric and a cutoff frequency of 60 GHz Ieee Electron Device Letters. 31: 1214-1216
Li G, Zimmermann T, Cao Y, et al. (2010) Threshold Voltage Control in $\hbox{Al}_{0.72} \hbox{Ga}_{0.28}\hbox{N/AlN/GaN}$ HEMTs by Work-Function Engineering Ieee Electron Device Letters. 31: 954-956
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