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Dimitris E. Ioannou

George Mason University, Washington, DC 
Electronics and Electrical Engineering
"Dimitris Ioannou"


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Xuejun (Eugene) Zhao grad student 2000 George Mason
Jeffrey A. Mittereder grad student 2002 George Mason (Physics Tree)
Akram A. Salman grad student 2002 George Mason
Rahul Mishra grad student 2008 George Mason (Chemistry Tree)
Xiaoxiao Zhu grad student 2010 George Mason (Chemistry Tree)
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Gu K, Yu S, Eshun K, et al. (2017) Two-dimensional hybrid layered materials: Strain Engineering on the Band Structure of MoS2/WSe2 hetero-multilayers. Nanotechnology
Chbili Z, Cheung KP, Campbell JP, et al. (2016) Time dependent dielectric breakdown in high quality SiC MOS capacitors Materials Science Forum. 858: 615-618
Chbili Z, Matsuda A, Chbili J, et al. (2016) Modeling early breakdown failures of gate oxide in SiC power MOSFETs Ieee Transactions On Electron Devices. 63: 3605-3613
Yuan H, Cheng G, You L, et al. (2015) Influence of metal-MoS2 interface on MoS2 transistor performance: comparison of Ag and Ti contacts. Acs Applied Materials & Interfaces. 7: 1180-7
Badwan AZ, Chbili Z, Li Q, et al. (2015) SOI FED-SRAM Cell: Structure and Operation Ieee Transactions On Electron Devices. 62: 2865-2870
Badwan AZ, Li Q, Ioannou DE. (2015) On the Nature of the Memory Mechanism of Gated-Thyristor Dynamic-RAM Cells Ieee Journal of the Electron Devices Society. 3: 468-471
Li Q, Xiong HD, Liang X, et al. (2014) Self-assembled nanowire array capacitors: capacitance and interface state profile. Nanotechnology. 25: 135201
Chbili Z, Shreshta PR, Campbell JP, et al. (2014) Unexpected effect of thermal storage observed on SiC power DMOSFET Materials Science Forum. 778: 529-532
Yuan H, Badwan A, Richter CA, et al. (2014) Gate assisted Kelvin test structure to measure the electron and hole flows at the same nanowire contacts Applied Physics Letters. 105
Zhu H, Yuan H, Li H, et al. (2013) Design and fabrication of Ta2O5 stacks for discrete multibit memory application Ieee Transactions On Nanotechnology. 12: 1151-1157
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