Jie-Wei Lai, Ph.D.
Affiliations: | 2005 | University of Illinois, Urbana-Champaign, Urbana-Champaign, IL |
Area:
Electronics and Electrical EngineeringGoogle:
"Jie-Wei Lai"Parents
Sign in to add mentor| Milton Feng | grad student | 2005 | UIUC | |
| (Large signal HBT model and integrated circuit design using 300-GHz indium phosphide HBT technology.) | ||||
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Publications
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| Lai JW, Chuang YJ, Cimino K, et al. (2006) Design of variable gain amplifier with gain-bandwidth product up to 354 GHz implemented in InP-InGaAs DHBT technology Ieee Transactions On Microwave Theory and Techniques. 54: 599-607 |
| Hafez W, Lai J, Feng M. (2003) Vertical scaling of 0.25-μm emitter InP/InGaAs single heterojunction bipolar transistors with f/sub T/ of 452 GHz Ieee Electron Device Letters. 24: 436-438 |
| Hafez W, Lai J, Feng M. (2003) Low-power high-speed operation of submicron InP-InGaAs SHBTs at 1 mA Ieee Electron Device Letters. 24: 427-429 |
| Hafez W, Lai J, Feng M. (2003) Submicron InP-InGaAs single heterojunction bipolar transistors with f/sub T/ of 377 GHz Ieee Electron Device Letters. 24: 292-294 |