Randy W. Mann, Ph.D.
Affiliations: | 2010 | University of Virginia, Charlottesville, VA |
Area:
Electronics and Electrical EngineeringGoogle:
"Randy Mann"Parents
Sign in to add mentor| Benton H. Calhoun | grad student | 2010 | UVA | |
| (Interactions of Technology and Design in Nanoscale SRAM.) | ||||
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Publications
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| Paul BC, Jacob AP, Taylor W, et al. (2018) A Retrospective View on the Technology Evolution to Support Low Power Mobile Application Journal of Low Power Electronics. 14: 374-392 |
| Wooters SN, Cabe AC, Qi Z, et al. (2012) Tracking on-chip age using distributed, embedded sensors Ieee Transactions On Very Large Scale Integration (Vlsi) Systems. 20: 1974-1985 |
| Mann RW, Hook TB, Nguyen PT, et al. (2012) Nonrandom device mismatch considerations in nanoscale SRAM Ieee Transactions On Very Large Scale Integration (Vlsi) Systems. 20: 1211-1220 |
| Mann RW, Wang J, Nalam S, et al. (2010) Impact of circuit assist methods on margin and performance in 6T SRAM Solid-State Electronics. 54: 1398-1407 |
| Mann RW, Abadeer W, Breitwisch MJ, et al. (2003) Ultralow-power SRAM technology Ibm Journal of Research and Development. 47: 553-566 |
| Hook TB, Brown J, Cottrell P, et al. (2003) Lateral ion implant straggle and mask proximity effect Ieee Transactions On Electron Devices. 50: 1946-1951 |
| Hook TB, Brown JS, Breitwisch M, et al. (2002) High-performance logic and high-gain analog CMOS transistors formed by a shadow-mask technique with a single implant step Ieee Transactions On Electron Devices. 49: 1623-1627 |
| Hook TB, Breitwisch M, Brown J, et al. (2002) Noise margin and leakage in ultra-low leakage SRAM cell design Ieee Transactions On Electron Devices. 49: 1499-1501 |
| Miles GL, Mann RW, Bertsch JE. (1996) TiSi2 phase transformation characteristics on narrow devices Thin Solid Films. 290: 469-472 |
| Mann RW, Clevenger LA, Miles GL, et al. (1995) Reduction of the C54-TiSi 2 Phase Formation Temperature Using Metallic Impurities Mrs Proceedings. 402 |