Brian P. Downey, Ph.D.
Affiliations: | 2011 | Pennsylvania State University, State College, PA, United States |
Area:
Materials Science Engineering, Electronics and Electrical EngineeringGoogle:
"Brian Downey"Parents
Sign in to add mentor| Suzanne Mohney | grad student | 2011 | Penn State | |
| (High current density stability of ohmic contacts to silicon carbide.) | ||||
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Publications
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| Gokhale VJ, Downey BP, Katzer DS, et al. (2020) Epitaxial bulk acoustic wave resonators as highly coherent multi-phonon sources for quantum acoustodynamics. Nature Communications. 11: 2314 |
| Katzer DS, Hardy MT, Nepal N, et al. (2020) Growth-induced temperature changes during transition metal nitride epitaxy on transparent SiC substrates Journal of Vacuum Science & Technology. B. Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena. 38: 32204 |
| Jin EN, Lang AC, Hardy MT, et al. (2020) Epitaxial growth of SrCaTiO3 films on GaN by molecular beam epitaxy with a TiO2 buffer layer Journal of Applied Physics. 127: 214104 |
| Cornuelle EM, Growden TA, Storm DF, et al. (2020) Effects of growth temperature on electrical properties of GaN/AlN based resonant tunneling diodes with peak current density up to 1.01 MA/cm2 Aip Advances. 10: 055307 |
| Growden TA, Storm DF, Cornuelle EM, et al. (2020) Superior growth, yield, repeatability, and switching performance in GaN-based resonant tunneling diodes Applied Physics Letters. 116: 113501 |
| Currie M, Wheeler VD, Downey B, et al. (2019) Asymmetric hysteresis in vanadium dioxide thin films Optical Materials Express. 9: 3717-3728 |
| Katzer DS, Nepal N, Hardy MT, et al. (2019) RF-plasma MBE growth of epitaxial metallic TaNx transition metal nitride films on SiC Journal of Vacuum Science & Technology. B. Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena. 37: 31211 |
| Nepal N, Anderson VR, Johnson SD, et al. (2019) Understanding the effect of nitrogen plasma exposure on plasma assisted atomic layer epitaxy of InN monitored by real time grazing incidence small angle x-ray scattering Journal of Vacuum Science & Technology A. 37: 020910 |
| Ancona MG, Calame JP, Meyer DJ, et al. (2019) Compositionally Graded III-N HEMTs for Improved Linearity: A Simulation Study Ieee Transactions On Electron Devices. 66: 2151-2157 |
| Yan R, Khalsa G, Vishwanath S, et al. (2018) GaN/NbN epitaxial semiconductor/superconductor heterostructures. Nature. 555: 183-189 |