Andrew D. Koehler, Ph.D.
Affiliations: | 2011 | University of Florida, Gainesville, Gainesville, FL, United States |
Area:
Electronics and Electrical EngineeringGoogle:
"Andrew Koehler"Parents
Sign in to add mentor| Toshikazu Nishida | grad student | 2011 | UF Gainesville | |
| (Impact of mechanical stress on AlGaN/GaN HEMT performance: Channel resistance and gate current.) | ||||
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Publications
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| Ebrish MA, Anderson TJ, Koehler AD, et al. (2020) A study on the impact of mid-gap defects on vertical GaN diodes Ieee Transactions On Semiconductor Manufacturing. 1-1 |
| Foster GM, Koehler A, Ebrish M, et al. (2020) Recovery from plasma etching-induced nitrogen vacancies in p-type gallium nitride using UV/O3 treatments Applied Physics Letters. 117: 82103 |
| Specht P, Kirste R, Sitar Z, et al. (2020) Dose Rate Considerations for Semiconductor Electronics: Why Current Variations Enable Unique GaN-based Transmission Electron Microscopy Microscopy and Microanalysis. 1-3 |
| Gallagher JC, Koehler AD, Tadjer MJ, et al. (2019) Demonstration of CuI as a P–N heterojunction to β-Ga2O3 Applied Physics Express. 12: 104005 |
| Anderson TJ, Luna LE, Aktas O, et al. (2019) Lateral GaN JFET Devices on Large Area Engineered Substrates Ecs Journal of Solid State Science and Technology. 8: Q226-Q229 |
| Gallagher JC, Kub FJ, Anderson TJ, et al. (2019) Reduced Contact Resistance in GaN Using Selective Area Si Ion Implantation Ieee Transactions On Semiconductor Manufacturing. 32: 478-482 |
| Khachatrian A, Buchner S, Koehler A, et al. (2019) The Effect of the Gate-Connected Field Plate on Single-Event Transients in AlGaN/GaN Schottky-Gate HEMTs Ieee Transactions On Nuclear Science. 66: 1682-1687 |
| Khachatrian A, Roche NJ-, Buchner SP, et al. (2019) Investigation of Single-Event Transients in AlGaN/GaN MIS-Gate HEMTs Using a Focused X-Ray Beam Ieee Transactions On Nuclear Science. 66: 368-375 |
| Tadjer MJ, Anderson TJ, Ancona MG, et al. (2019) GaN-On-Diamond HEMT Technology With TAVG = 176°C at PDC,max = 56 W/mm Measured by Transient Thermoreflectance Imaging Ieee Electron Device Letters. 40: 881-884 |
| Gallagher J, Anderson T, Luna L, et al. (2019) Long range, non-destructive characterization of GaN substrates for power devices Journal of Crystal Growth. 506: 178-184 |