Ik S. Chun, Ph.D.
Affiliations: | 2011 | Electrical & Computer Eng | University of Illinois, Urbana-Champaign, Urbana-Champaign, IL |
Area:
Electronics and Electrical EngineeringGoogle:
"Ik Chun"Parents
Sign in to add mentorXinling Li | grad student | 2011 | UIUC | |
(Strain-induced self-rolled-up semiconductor micro/nanotubes: Fabrication and characterization.) |
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Publications
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Tang L, Chun IS, Wang Z, et al. (2013) DNA detection using plasmonic enhanced near-infrared photoluminescence of gallium arsenide. Analytical Chemistry. 85: 9522-7 |
Chun IS, Challa A, Derickson B, et al. (2010) Geometry effect on the strain-induced self-rolling of semiconductor membranes. Nano Letters. 10: 3927-32 |
Yoon J, Jo S, Chun IS, et al. (2010) GaAs photovoltaics and optoelectronics using releasable multilayer epitaxial assemblies. Nature. 465: 329-33 |
Chern W, Hsu K, Chun IS, et al. (2010) Nonlithographic patterning and metal-assisted chemical etching for manufacturing of tunable light-emitting silicon nanowire arrays. Nano Letters. 10: 1582-8 |
Wang Z, Chun IS, Li X, et al. (2010) Topography and refractometry of nanostructures using spatial light interference microscopy. Optics Letters. 35: 208-10 |
Chun IS, Bassett K, Challa A, et al. (2010) Strain-induced self-rolling III-V tubular nanostructures: Formation process and photonic applications Proceedings of Spie - the International Society For Optical Engineering. 7608 |
Chun IS, Bassett K, Challa A, et al. (2010) Tuning the photoluminescence characteristics with curvature for rolled-up GaAs quantum well microtubes Applied Physics Letters. 96 |
Chun IS, Challa A, Derickson B, et al. (2010) Geometry effect on the strain-induced self-rolling of semiconductor membranes Nano Letters. 10: 3927-3932 |
Fortuna SA, Wen J, Chun IS, et al. (2008) Planar GaAs nanowires on GaAs (100) substrates: self-aligned, nearly twin-defect free, and transfer-printable. Nano Letters. 8: 4421-7 |
Chun IS, Li X. (2008) Controlled Assembly and Dispersion of Strain-Induced InGaAs/GaAs Nanotubes Ieee Transactions On Nanotechnology. 7: 493-495 |