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Nagaoka A, Kimura K, Ang AKR, et al. (2023) Direct Observation of Group-V Dopant Substitutional Defects in CdTe Single Crystals. Journal of the American Chemical Society. 145: 9191-9197 |
Nagaoka A, Yoshino K, Masuda T, et al. (2021) Environmentally friendly thermoelectric sulphide Cu2ZnSnS4 single crystals achieving a 1.6 dimensionless figure of merit ZT Journal of Materials Chemistry A. 9: 15595-15604 |
Nagaoka A, Yoshino K, Kakimoto K, et al. (2021) Phase diagram of the Ag2SnS3–ZnS pseudobinary system for Ag2ZnSnS4 crystal growth Journal of Crystal Growth. 555: 125967 |
Nagaoka A, Takeuchi M, Shigeeda Y, et al. (2020) Chalcostibite Single-Crystal CuSbS2 as High-Performance Thermoelectric Material Materials Transactions. 61: 2407-2411 |
Nagaoka A, Nishioka K, Yoshino K, et al. (2020) Comparison of Sb, As, and P doping in Cd-rich CdTe single crystals: Doping properties, persistent photoconductivity, and long-term stability Applied Physics Letters. 116: 132102 |
Nagaoka A, Nishioka K, Yoshino K, et al. (2020) Growth and Characterization of Arsenic-Doped CdTe 1−x Se x Single Crystals Grown by the Cd-Solvent Traveling Heater Method Journal of Electronic Materials. 1-6 |
Nagaoka A, Nishioka K, Yoshino K, et al. (2019) Erratum: “Arsenic doped Cd-rich CdTe: equilibrium doping limit and long lifetime for high open-circuit voltage solar cells greater than 900 mV” [Appl. Phys. Express 12, 081002 (2019)] Applied Physics Express. 12: 089401 |
Nagaoka A, Nishioka K, Yoshino K, et al. (2019) Arsenic doped Cd-rich CdTe: equilibrium doping limit and long lifetime for high open-circuit voltage solar cells greater than 900 mV Applied Physics Express. 12: 081002 |
Nagaoka A, Takeuchi M, Yoshino K, et al. (2019) Growth of CuSbS 2 Single Crystal as an Environmentally Friendly Thermoelectric Material Physica Status Solidi (a). 216: 1800861 |
Han KB, Chong SK, Oliynyk AO, et al. (2018) Enhancement in surface mobility and quantum transport of BiSbTeSe topological insulator by controlling the crystal growth conditions. Scientific Reports. 8: 17290 |