Wei Kong
Affiliations: | Electrical and Computer Engineering | Duke University, Durham, NC |
Website:
https://meche.mit.edu/people/staff/weikong@mit.eduGoogle:
"Wei Kong"
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Publications
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| Bae SH, Lu K, Han Y, et al. (2020) Graphene-assisted spontaneous relaxation towards dislocation-free heteroepitaxy. Nature Nanotechnology |
| Collar KN, Li J, Jiao W, et al. (2018) Unidirectional lateral nanowire formation during the epitaxial growth of GaAsBi on vicinal substrates. Nanotechnology. 29: 035604 |
| Kim Y, Cruz SS, Lee K, et al. (2017) Remote epitaxy through graphene enables two-dimensional material-based layer transfer. Nature. 544: 340-343 |
| Kong W, Roberts AT, Jiao WY, et al. (2017) UVB-emitting InAlGaN multiple quantum well synthesized using plasma-assisted molecular beam epitaxy Aip Advances. 7: 035109 |
| Li J, Collar K, Jiao W, et al. (2016) Impact of vicinal GaAs(001) substrates on Bi incorporation and photoluminescence in molecular beam epitaxy-grown GaAs |
| Kong W, Roberts AT, Jiao WY, et al. (2015) Room temperature Ultraviolet B emission from InAlGaN films synthesized by plasma-assisted molecular beam epitaxy Applied Physics Letters. 107 |
| Kong W, Jiao WY, Li JC, et al. (2015) Effect of strain in sputtered AlN buffer layers on the growth of GaN by molecular beam epitaxy Applied Physics Letters. 107 |
| Li J, Forghani K, Guan Y, et al. (2015) GaAs |
| Kong W, Jiao WY, Li JC, et al. (2015) Structural Characterization of the Nanocolumnar Microstructure of InAlN Journal of Electronic Materials |
| Kong W, Mohanta A, Roberts AT, et al. (2014) Room temperature photoluminescence from InxAl(1-x)N films deposited by plasma-assisted molecular beam epitaxy Applied Physics Letters. 105 |