Guangle Zhou, Ph.D.
Affiliations: | 2012 | University of Notre Dame, Notre Dame, IN, United States |
Area:
Electronics and Electrical EngineeringGoogle:
"Guangle Zhou"Parents
Sign in to add mentor| Huili Xing | grad student | 2012 | Notre Dame | |
| (III-V vertical tunnel field effect transistors with tunneling aligned with the gate field.) | ||||
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Publications
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| Zhou G, Lu Y, Li R, et al. (2012) InGaAs/InP tunnel FETs with a subthreshold swing of 93 mV/dec and I ON/I OFF ratio near 10 6 Ieee Electron Device Letters. 33: 782-784 |
| Lu Y, Zhou G, Li R, et al. (2012) Performance of AlGaSb/InAs TFETs with gate electric field and tunneling direction aligned Ieee Electron Device Letters. 33: 655-657 |
| Li R, Lu Y, Zhou G, et al. (2012) AlGaSb/InAs tunnel field-effect transistor with on-current of 78 μaμm at 0.5 v Ieee Electron Device Letters. 33: 363-365 |
| Zhang Q, Zhou G, Xing HG, et al. (2012) Tunnel field-effect transistor heterojunction band alignment by internal photoemission spectroscopy Applied Physics Letters. 100 |
| Li R, Lu Y, Chae SD, et al. (2012) InAs/AlGaSb heterojunction tunnel field-effect transistor with tunnelling in-line with the gate field Physica Status Solidi (C) Current Topics in Solid State Physics. 9: 389-392 |
| Zhou G, Lu Y, Li R, et al. (2011) Vertical InGaAs/InP tunnel FETs with tunneling normal to the gate Ieee Electron Device Letters. 32: 1516-1518 |