Erich Gornik, Ph.D.

Affiliations: 
Institute for Solid State Electronics TU Wien / Technical University of Vienna 
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Hillbrand J, Auth D, Piccardo M, et al. (2020) In-Phase and Anti-Phase Synchronization in a Laser Frequency Comb. Physical Review Letters. 124: 023901
Holzbauer M, Klang P, Detz H, et al. (2014) Resonant intersubband plasmon induced current in InGaAs quantum wells on GaAs Applied Physics Letters. 104: 122101
Sousa JSd, Detz H, Klang P, et al. (2012) Large Rashba effect in GaAsSb/InGaAs RTDs at high temperatures Journal of the Korean Physical Society. 60: 1762-1766
Kuzmik J, Vitanov S, Dua C, et al. (2012) Buffer-Related Degradation Aspects of Single and Double-Heterostructure Quantum Well InAlN/GaN High-Electron-Mobility Transistors Japanese Journal of Applied Physics. 51: 54102
Sousa JSd, Detz H, Klang P, et al. (2011) Enhanced Rashba effect in transverse magnetic fields observed on InGaAs/GaAsSb resonant tunneling diodes at temperatures up to T = 180 K Applied Physics Letters. 99: 152107
Kuzmik J, Ostermaier C, Pozzovivo G, et al. (2010) Proposal and Performance Analysis of Normally Off $ \hbox{n}^{++}$ GaN/InAlN/AlN/GaN HEMTs With 1-nm-Thick InAlN Barrier Ieee Transactions On Electron Devices. 57: 2144-2154
De Sousa JS, Detz H, Klang P, et al. (2010) Nonparabolicity effects in InGaAs/GaAsSb double barrier resonant tunneling diodes Journal of Applied Physics. 108
Kuzmik J, Pozzovivo G, Ostermaier C, et al. (2009) Analysis of degradation mechanisms in lattice-matched InAlN/GaN high-electron-mobility transistors Journal of Applied Physics. 106: 124503
Coquelin M, Strasser G, Gornik E, et al. (2009) Controlled generation of resonant electron-electron scattering induced current in quantum well structures Applied Physics Letters. 95
Kuzmik J, Pozzovivo G, Carlin J-, et al. (2009) Off-state breakdown in InAlN/AlN/GaN high electron mobility transistors Physica Status Solidi (C). 6
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