Elaheh Ahmadi
Affiliations: | 2015 | University of California, Santa Barbara, Santa Barbara, CA, United States |
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"Elaheh Ahmadi"
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| Romanczyk B, Guidry M, Zheng X, et al. (2020) Bias-Dependent Electron Velocity Extracted From N-Polar GaN Deep Recess HEMTs Ieee Transactions On Electron Devices. 67: 1542-1546 |
| Bisi D, Meneghesso G, Mishra UK, et al. (2020) Observation of I D -V D Kink in N-Polar GaN MIS-HEMTs at Cryogenic Temperatures Ieee Electron Device Letters. 41: 345-348 |
| Romanczyk B, Mishra UK, Zheng X, et al. (2020) W-Band Power Performance of SiN-Passivated N-Polar GaN Deep Recess HEMTs Ieee Electron Device Letters. 41: 349-352 |
| Hatui N, Krishna A, Li H, et al. (2020) Ultra-high silicon doped N-polar GaN contact layers grown by metal-organic chemical vapor deposition Semiconductor Science and Technology. 35: 95002 |
| Gupta C, Tsukada Y, Romanczyk B, et al. (2019) First demonstration of improvement in hole conductivity in c-plane III-Nitrides through application of uniaxial strain Japanese Journal of Applied Physics. 58: 30908 |
| Pasayat SS, Ahmadi E, Romanczyk B, et al. (2019) First demonstration of RF N-polar GaN MIS-HEMTs grown on bulk GaN using PAMBE Semiconductor Science and Technology. 34: 45009 |
| Romanczyk B, Wienecke S, Guidry M, et al. (2018) Demonstration of Constant 8 W/mm Power Density at 10, 30, and 94 GHz in State-of-the-Art Millimeter-Wave N-Polar GaN MISHEMTs Ieee Transactions On Electron Devices. 65: 45-50 |
| Bisi D, Santi CD, Meneghini M, et al. (2018) Observation of Hot Electron and Impact Ionization in N-Polar GaN MIS-HEMTs Ieee Electron Device Letters. 39: 1007-1010 |
| Zheng X, Li H, Guidry M, et al. (2018) Analysis of MOCVD SiNx Passivated N-Polar GaN MIS-HEMTs on Sapphire With High $f_{max}\cdot V_{DS,Q}$ Ieee Electron Device Letters. 39: 409-412 |
| Han S, Mauze A, Ahmadi E, et al. (2018) n-type dopants in (001) β-Ga2O3 grown on (001) β-Ga2O3 substrates by plasma-assisted molecular beam epitaxy Semiconductor Science and Technology. 33: 45001 |