Brian Romanczyk
Affiliations: | 2013- | Electrical & Computer Engineering | University of California, Santa Barbara, Santa Barbara, CA, United States |
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"Brian Romanczyk"
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Publications
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| Sayed I, Liu W, Romanczyk B, et al. (2020) Improved operation stability of in-situ AlSiO dielectric grown on (000-1) N-polar GaN by MOCVD Applied Physics Express. 13: 61010 |
| Romanczyk B, Guidry M, Zheng X, et al. (2020) Bias-Dependent Electron Velocity Extracted From N-Polar GaN Deep Recess HEMTs Ieee Transactions On Electron Devices. 67: 1542-1546 |
| Romanczyk B, Li W, Guidry M, et al. (2020) N-polar GaN-on-Sapphire Deep Recess HEMTs with High W-Band Power Density Ieee Electron Device Letters. 1-1 |
| Liu W, Sayed I, Romanczyk B, et al. (2020) Ru/N-polar GaN Schottky diode with less than 2 μA/cm2 reverse current Ieee Electron Device Letters. 1-1 |
| Shrestha P, Guidry M, Romanczyk B, et al. (2020) High Linearity and High Gain Performance of N-Polar GaN MIS-HEMT at 30 GHz Ieee Electron Device Letters. 41: 681-684 |
| Bisi D, Meneghesso G, Mishra UK, et al. (2020) Observation of I D -V D Kink in N-Polar GaN MIS-HEMTs at Cryogenic Temperatures Ieee Electron Device Letters. 41: 345-348 |
| Hatui N, Krishna A, Li H, et al. (2020) Ultra-high silicon doped N-polar GaN contact layers grown by metal-organic chemical vapor deposition Semiconductor Science and Technology. 35: 95002 |
| Li W, Pasayat SS, Guidry M, et al. (2020) First experimental demonstration and analysis of electrical transport characteristics of a GaN-based HEMT with a relaxed InGaN channel Semiconductor Science and Technology. 35: 75007 |
| Gupta C, Tsukada Y, Romanczyk B, et al. (2019) First demonstration of improvement in hole conductivity in c-plane III-Nitrides through application of uniaxial strain Japanese Journal of Applied Physics. 58: 30908 |
| Pasayat SS, Ahmadi E, Romanczyk B, et al. (2019) First demonstration of RF N-polar GaN MIS-HEMTs grown on bulk GaN using PAMBE Semiconductor Science and Technology. 34: 45009 |