Chirag Gupta
Affiliations: | 2013- | Electrical & Computer Engineering | University of California, Santa Barbara, Santa Barbara, CA, United States |
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"Chirag Gupta"
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| Pasayat SS, Gupta C, Wang Y, et al. (2020) Compliant Micron-Sized Patterned InGaN Pseudo-Substrates Utilizing Porous GaN. Materials (Basel, Switzerland). 13 |
| Raj A, Krishna A, Hatui N, et al. (2020) Demonstration of a GaN/AlGaN Superlattice-Based p-Channel FinFET With High ON-Current Ieee Electron Device Letters. 41: 220-223 |
| Hatui N, Krishna A, Li H, et al. (2020) Ultra-high silicon doped N-polar GaN contact layers grown by metal-organic chemical vapor deposition Semiconductor Science and Technology. 35: 95002 |
| Li W, Pasayat SS, Guidry M, et al. (2020) First experimental demonstration and analysis of electrical transport characteristics of a GaN-based HEMT with a relaxed InGaN channel Semiconductor Science and Technology. 35: 75007 |
| Pasayat SS, Hatui N, Li W, et al. (2020) Method of growing elastically relaxed crack-free AlGaN on GaN as substrates for ultra-wide bandgap devices using porous GaN Applied Physics Letters. 117: 62102 |
| Pasayat SS, Ley R, Gupta C, et al. (2020) Color-tunable <10 μm square InGaN micro-LEDs on compliant GaN-on-porous-GaN pseudo-substrates Applied Physics Letters. 117: 61105 |
| Pasayat SS, Gupta C, Wong MS, et al. (2020) Growth of strain-relaxed InGaN on micrometer-sized patterned compliant GaN pseudo-substrates Applied Physics Letters. 116: 111101 |
| Liu W, Sayed I, Gupta C, et al. (2020) An improved methodology for extracting interface state density at Si3N4/GaN Applied Physics Letters. 116: 22104 |
| Sayed I, Liu W, Chan S, et al. (2019) Flatband voltage stability and time to failure of MOCVD-grown SiO 2 and Si 3 N 4 dielectrics on N-polar GaN Applied Physics Express. 12: 121001 |
| Gupta C, Tsukada Y, Romanczyk B, et al. (2019) First demonstration of improvement in hole conductivity in c-plane III-Nitrides through application of uniaxial strain Japanese Journal of Applied Physics. 58: 30908 |