Wei Sun, Ph.D.
Affiliations: | 2014-2019 | Electrical and Computer Engineering | Lehigh University, Bethlehem, PA, United States |
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"Wei Sun"
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| Peart MR, Borovac D, Sun W, et al. (2020) AlInN/GaN diodes for power electronic devices Applied Physics Express. 13: 91006 |
| Borovac D, Sun W, Tan C, et al. (2020) Electronic properties of dilute-As InGaNAs alloys: A first-principles study Journal of Applied Physics. 127: 015103 |
| Borovac D, Sun W, Peart MR, et al. (2020) Low background doping in AlInN grown on GaN via metalorganic vapor phase epitaxy Journal of Crystal Growth. 548: 125847 |
| Borovac D, Sun W, Song R, et al. (2020) On the thermal stability of nearly lattice-matched AlInN films grown on GaN via MOVPE Journal of Crystal Growth. 533: 125469 |
| Sun W, Kim H, Mawst LJ, et al. (2020) Interplay of GaAsP barrier and strain compensation in InGaAs quantum well at near-critical thickness Journal of Crystal Growth. 531: 125381 |
| Al Muyeed SA, Sun W, Peart MR, et al. (2019) Recombination rates in green-yellow InGaN-based multiple quantum wells with AlGaN interlayers Journal of Applied Physics. 126: 213106 |
| Fu H, Sun W, Ogidi-Ekoko O, et al. (2019) Gain characteristics of InGaN quantum wells with AlGaInN barriers Aip Advances. 9: 045013 |
| Sun W, Tan CK, Wierer JJ, et al. (2018) Ultra-Broadband Optical Gain in III-Nitride Digital Alloys. Scientific Reports. 8: 3109 |
| Zeng G, Sun W, Song R, et al. (2018) Publisher Correction: Crystal Orientation Dependence of Gallium Nitride Wear. Scientific Reports. 8: 2580 |
| Wei X, Al Muyeed SA, Peart MR, et al. (2018) Room temperature luminescence of passivated InGaN quantum dots formed by quantum-sized-controlled photoelectrochemical etching Applied Physics Letters. 113: 121106 |