Christian Wurm
Affiliations: | University of California, Santa Barbara, Santa Barbara, CA, United States |
Area:
Electrical and computer engineeringGoogle:
"Christian Wurm"
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Publications
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| Romanczyk B, Li W, Guidry M, et al. (2020) N-polar GaN-on-Sapphire Deep Recess HEMTs with High W-Band Power Density Ieee Electron Device Letters. 1-1 |
| Shrestha P, Guidry M, Romanczyk B, et al. (2020) High Linearity and High Gain Performance of N-Polar GaN MIS-HEMT at 30 GHz Ieee Electron Device Letters. 41: 681-684 |
| Romanczyk B, Mishra UK, Zheng X, et al. (2020) W-Band Power Performance of SiN-Passivated N-Polar GaN Deep Recess HEMTs Ieee Electron Device Letters. 41: 349-352 |
| Wurm C, Ahmadi E, Wu F, et al. (2020) Growth of high-quality N-polar GaN on bulk GaN by plasma-assisted molecular beam epitaxy Solid State Communications. 305: 113763 |
| Pasayat SS, Ahmadi E, Romanczyk B, et al. (2019) First demonstration of RF N-polar GaN MIS-HEMTs grown on bulk GaN using PAMBE Semiconductor Science and Technology. 34: 45009 |
| Lund C, Catalano M, Wang L, et al. (2018) Metal-organic chemical vapor deposition of N-polar InN quantum dots and thin films on vicinal GaN Journal of Applied Physics. 123: 055702 |