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Kurt D. Weiser

Affiliations: 
Technion University, Haifa, Haifa District, Israel 
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"Kurt Weiser"
Bio:

Kurt Weiser was Professor Emeritus in Electrical Engineering at the Technion, Haifa, Israel. He passed away in a car accident in 1999. Professor Weiser was born in Vienna, escaped after the Nazi takeover in 1938, and served in the U.S. Army during World War II as a First Lieutenant. He graduated from Harvard and earned a Ph.D. in physics from Cornell in 1954. His dissertation was entitled "Thermodynamics of polymer solutions: Polyisobutylene-cyclohexane.". He worked at the Sarnoff Research Center for RCA in Princeton and spent 18 years with IBM, first in Poughkeepsie and then as a Senior Scientist with the IBM Thomas J. Watson Research Center in Yorktown Heights, NY. He remained a consultant for IBM while on the faculty of the Technion. Dr. Weiser moved with his family to Israel in 1973.

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Parents

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Paul J. Flory grad student 1954 Cornell (Chemistry Tree)

Children

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Theodore D. Moustakas grad student 1974 Columbia
Eli Zeldov grad student 1983-1986 Technion (Physics Tree)
Felix L Martinez-Viviente grad student 1998-1999 Technion

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Publications

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Zelikson M, Weiser K, Kanicki J. (1996) Study of sub-bandgap photo-induced absorption in a-Si:H using excitation spectroscopy in a waveguide configuration Journal of Non-Crystalline Solids. 198: 259-262
Zelikson M, Weiser K, Chack A, et al. (1996) Direct determination of the quadratic electro-optic coefficient in an a-Si:H based waveguide Journal of Non-Crystalline Solids. 198: 107-110
Haridim M, Zelikson M, Weiser K. (1994) Trapping effects in a-Si:H investigated by small-signal transient photoconductivity and the steady-state photocarrier-grating technique. Physical Review. B, Condensed Matter. 49: 13394-13399
Haridim M, Weiser K, Mell H. (1993) Use of the steady-state photocarrier-grating technique for the study of the surface recombination velocity of photocarriers and the homogeneity of hydrogenated amorphous silicon films Philosophical Magazine B: Physics of Condensed Matter; Statistical Mechanics, Electronic, Optical and Magnetic Properties. 67: 171-180
Haridim M, Zelikson M, Weiser K. (1993) Trapping effects in a-Si:H investigated by the SSPG technique Journal of Non-Crystalline Solids. 164: 493-496
Zelikson M, Salzman J, Weiser K, et al. (1992) Enhanced electro-optic effect in amorphous hydrogenated silicon based waveguides Applied Physics Letters. 61: 1664-1666
Haridim M, Kurin E, Weiser K, et al. (1992) Determination of surface recombination velocity of excess carriers in amorphous silicon using the SSPG technique Journal of Non-Crystalline Solids. 141: 119-122
Zelikson M, Weiser K, Salzman J, et al. (1991) Threshold and saturation effects for photosignals in an amorphous silicon waveguide structure Applied Physics Letters. 59: 2660-2662
Zelikson M, Weiser K, Salzman J, et al. (1991) Determination of electron and hole mobilities in an a-Si:H from photo-electric effects in a waveguide structure Journal of Non-Crystalline Solids. 137: 455-458
Ritter D, Zeldov E, Weiser K. (1988) Ambipolar transport in amorphous semiconductors in the lifetime and relaxation-time regimes investigated by the steady-state photocarrier grating technique. Physical Review. B, Condensed Matter. 38: 8296-8304
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