William Nelson Gill

Affiliations: 
1960-1965 Chemical Engineering & Metallurgy Syracuse University, Syracuse, NY, United States 
 1965-1971 Chemical Engineering Clarkson University, Potsdam, NY, United States 
 1971-1987 Chemical Engineering State University of New York, Buffalo, Buffalo, NY, United States 
 1980-1982 Iowa State University, Ames, IA, United States 
 1987- Chemical Engineering Rensselaer Polytechnic Institute, Troy, NY, United States 
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Borja J, Plawsky JL, Lu TM, et al. (2014) Correlation between plasma damage and dielectric reliability for ultra-porous low-k materials Ecs Journal of Solid State Science and Technology. 3: N59-N61
Borja J, Plawsky JL, Lu TM, et al. (2014) Current leakage relaxation and charge trapping in ultra-porous low- k materials Journal of Applied Physics. 115
Borja J, Plawsky JL, Gill WN, et al. (2013) Penetration of copper-manganese self-forming barrier into SiO2 pore-sealed SiCOH during deposition Ecs Journal of Solid State Science and Technology. 2
Borja J, Plawsky JL, Lu TM, et al. (2013) On the dynamics of Cu ions injection into low-k nanoporous materials under oscillating applied fields Journal of Applied Physics. 113
Plawsky JL, Gill WN, Achanta RS. (2012) Impact of interfacial solubility on penetration of metals into dielectrics and the mechanism of failure Journal of Materials Science: Materials in Electronics. 23: 48-55
Plawsky JL, Gill WN, Achanta RS. (2010) Modeling time-dependent dielectric breakdown with and without barriers Journal of Micro/Nanolithography, Mems, and Moems. 9
Achanta RS, Gill WN, Plawsky JL. (2009) Predicting the lifetime of copper/barrier/dielectric systems: Insights for designing better barriers for reducing copper ion drift/diffusion into the dielectric Journal of Applied Physics. 106
Achanta RS, Plawsky JL, Gill WN, et al. (2009) The effect of metallic barriers in inhibiting copper ion transport in low-k dielectrics: Implications for time-to-failure Thin Solid Films. 517: 5630-5633
Achanta RS, Plawsky JL, Gill WN. (2008) Copper ion transport induced dielectric failure: Inclusion of elastic drift and consequences for reliability Journal of Vacuum Science and Technology a: Vacuum, Surfaces and Films. 26: 1497-1500
Achanta RS, Gill WN, Plawsky JL. (2008) Copper ion drift in integrated circuits: Effect of boundary conditions on reliability and breakdown of low- k dielectrics Journal of Applied Physics. 103
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