John C. Bean
Affiliations: | 1997 | Materials Science Research | Bell Laboratories, Murray Hill, NJ, United States |
1997- | Engineering & Applied Science | University of Virginia, Charlottesville, VA |
Area:
Materials ScienceWebsite:
https://wecanfigurethisout.org/ABOUT/About.php#:~:text=I%20went%20south,in%20Applied%20PhysicsGoogle:
"John Condon Bean" OR "John C. Bean"Bio:
https://books.google.com/books?id=6OZGAAAAIAAJ
Cross-listing: Materials Tree
Parents
Sign in to add mentorJames F. Gibbons | grad student | 1976 | Stanford | |
(Ion Implantation in Cadmium Telluride) |
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Publications
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Stach EA, Hull R, Bean JC, et al. (1998) In Situ Studies of the Interaction of Dislocations with Point Defects during Annealing of Ion Implanted Si/SiGe/Si (001) Heterostructures. Microscopy and Microanalysis : the Official Journal of Microscopy Society of America, Microbeam Analysis Society, Microscopical Society of Canada. 4: 294-307 |