Year |
Citation |
Score |
2023 |
Han H, Zhang Q, Li W, Liu Y, Guo J, Wang Y, Li Q, Gu L, Nan CW, Ma J. Interfacial Oxygen Octahedral Coupling-Driven Robust Ferroelectricity in Epitaxial NaBiTiO Thin Films. Research (Washington, D.C.). 6: 0191. PMID 37465161 DOI: 10.34133/research.0191 |
0.357 |
|
2020 |
Li Y, Pan G, Wang J, Zhang Y, Shi H, Yu H, Liu Y. Tailoring the Polyamide Active Layer of Thin-Film Composite Forward Osmosis Membranes with Combined Cosolvents during Interfacial Polymerization Industrial & Engineering Chemistry Research. 59: 8230-8242. DOI: 10.1021/acs.iecr.0c00682 |
0.311 |
|
2019 |
Liu Y, Kim H, Wang J, Li H, Gordon RG. Effects of Low Temperature O2 Treatment on the Electrical Characteristics of Amorphous LaAlO3 Films by Atomic Layer Deposition Ecs Transactions. 16: 471-478. DOI: 10.1149/1.2981628 |
0.415 |
|
2015 |
Wang H, Madaan N, Bagley J, Diwan A, Liu Y, Davis RC, Lunt BM, Smith SJ, Linford MR. Spectroscopic ellipsometric modeling of a Bi-Te-Se write layer of an optical data storage device as guided by atomic force microscopy, scanning electron microscopy, and X-ray diffraction Thin Solid Films. 569: 124-130. DOI: 10.1016/J.Tsf.2014.08.026 |
0.331 |
|
2013 |
Wang X, Dong L, Zhang J, Liu Y, Ye PD, Gordon RG. Heteroepitaxy of La2O3 and La(2-x)Y(x)O3 on GaAs (111)A by atomic layer deposition: achieving low interface trap density. Nano Letters. 13: 594-9. PMID 23294262 DOI: 10.1021/Nl3041349 |
0.605 |
|
2012 |
Lee SW, Liu Y, Heo J, Gordon RG. Creation and control of two-dimensional electron gas using Al-based amorphous oxides/SrTiO₃ heterostructures grown by atomic layer deposition. Nano Letters. 12: 4775-83. PMID 22908907 DOI: 10.1021/Nl302214X |
0.59 |
|
2012 |
Liu Q, Dong L, Liu Y, Gordon R, Ye PD, Fay P, Seabaugh A. Frequency response of LaAlO 3/SrTiO 3 all-oxide field-effect transistors Solid-State Electronics. 76: 1-4. DOI: 10.1016/J.Sse.2012.05.044 |
0.444 |
|
2011 |
Shen S, Liu Y, Gordon RG, Brillson LJ. Impact of ultrathin Al2O3 diffusion barriers on defects in high- k LaLuO3 on Si Applied Physics Letters. 98. DOI: 10.1063/1.3583462 |
0.52 |
|
2011 |
Liu Y, Shen S, Brillson LJ, Gordon RG. Impact of ultrathin Al2 O3 barrier layer on electrical properties of LaLuO3 metal-oxide-semiconductor devices Applied Physics Letters. 98. DOI: 10.1063/1.3563713 |
0.602 |
|
2011 |
Heo J, Liu Y, Sinsermsuksakul P, Li Z, Sun L, Noh W, Gordon RG. (Sn,Al)Ox films grown by atomic layer deposition Journal of Physical Chemistry C. 115: 10277-10283. DOI: 10.1021/Jp202202X |
0.568 |
|
2010 |
Au Y, Lin Y, Kim H, Beh E, Liu Y, Gordon RG. Selective chemical vapor deposition of manganese self-aligned capping layer for cu interconnections in microelectronics Journal of the Electrochemical Society. 157: D341-D345. DOI: 10.1149/1.3364799 |
0.622 |
|
2010 |
Liu Y, Xu M, Heo J, Ye PD, Gordon RG. Heteroepitaxy of single-crystal LaLuO3 on GaAs(111)A by atomic layer deposition Applied Physics Letters. 97. DOI: 10.1063/1.3504254 |
0.644 |
|
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