☰

Vinayak Tilak, Ph.D. - Publications

Affiliations: 
2002 Cornell University, Ithaca, NY, United States 
Area:
Compound semiconductor materials and high frequency high speed devices; molecular beam epitaxy; microwave and millimeter wave transistors and integrated circuits; semiconductor lasers and photodetectors and their integration with transistors
Tree Info Similar researchers PubMed Report error

57 high-probability publications. We are testing a new system for linking publications to authors. You can help! If you notice any inaccuracies, please sign in and mark papers as correct or incorrect matches. If you identify any major omissions or other inaccuracies in the publication list, please let us know.

Year Citation  Score
2011 Matocha K, Tilak V. Understanding the inversion-layer properties of the 4H-SiC/SiO2 interface Materials Science Forum. 679: 318-325. DOI: 10.4028/Www.Scientific.Net/Msf.679-680.318  0.311
2009 Tilak V, Matocha K. Comment on A. Agarwal and S. Haney, "some critical materials and processing issues in SiC power devices" [J. Electron. Mater. 37, 646 (2008)] Journal of Electronic Materials. 38: 618-620. DOI: 10.1007/s11664-009-0661-2  0.317
2006 Tucker JB, Matocha K, Tilak V, Balaji S, Arthur S, Rao R, Beaupre R. 1500V SiC DIMOSFET development Ecs Transactions. 3: 367-372. DOI: 10.1149/1.2357226  0.341
2006 Tilak V, Vertiatchikh A, Jiang J, Reeves N, Dasgupta S. Piezoresistive and piezoelectric effects in GaN Physica Status Solidi (C) Current Topics in Solid State Physics. 3: 2307-2311. DOI: 10.1002/Pssc.200565217  0.687
2005 Danylyuk SV, Vitusevich SA, Kaper V, Tilak V, Klein N, Eastman LF, Shealy JR. Phase noise study of AlGaN/GaN HEMT X-band oscillator Physica Status Solidi C: Conferences. 2: 2615-2618. DOI: 10.1002/Pssc.200461457  0.702
2003 Lee S, Webb KJ, Tilak V, Eastman LF. Intrinsic noise equivalent-circuit parameters for AlGaN/GaN HEMTs Ieee Transactions On Microwave Theory and Techniques. 51: 1567-1577. DOI: 10.1109/Tmtt.2003.810140  0.528
2003 Green BM, Tilak V, Kaper VS, Smart JA, Shealy JR, Eastman LF. Microwave power limits of AlGaN/GaN HEMTs under pulsed-bias conditions Ieee Transactions On Microwave Theory and Techniques. 51: 618-623. DOI: 10.1109/Tmtt.2002.807680  0.795
2003 Sahoo DK, Lal RK, Kim H, Tilak V, Eastman LF. High-field effects in silicon nitride passivated GaN MODFETs Ieee Transactions On Electron Devices. 50: 1163-1170. DOI: 10.1109/Ted.2003.813221  0.636
2003 Koley G, Tilak V, Eastman LF, Spencer MG. Slow transients observed in AlGaN/GaN HFETs: Effects of SiNx passivation and UV illumination Ieee Transactions On Electron Devices. 50: 886-893. DOI: 10.1109/Ted.2003.812489  0.66
2003 Kim H, Thompson RM, Tilak V, Prunty TR, Shealy JR, Eastman LF. Effects of SiN passivation and high-electric field on AlGaN-GaN HFET degradation Ieee Electron Device Letters. 24: 421-423. DOI: 10.1109/Led.2003.813375  0.748
2003 Kaper VS, Tilak V, Kim H, Vertiatchikh AV, Thompson RM, Prunty TR, Eastman LF, Shealy JR. High-Power Monolithic AlGaN/GaN HEMT Oscillator Ieee Journal of Solid-State Circuits. 38: 1457-1461. DOI: 10.1109/Jssc.2003.815934  0.806
2003 Matulionis A, Liberis J, Matulionienė I, Ramonas M, Eastman LF, Shealy JR, Tilak V, Vertiatchikh A. Hot-phonon temperature and lifetime in a biased Al x Ga 1 − x N / G a N channel estimated from noise analysis Physical Review B. 68: 35338. DOI: 10.1103/Physrevb.68.035338  0.794
2003 Vitusevich SA, Danylyuk SV, Klein N, Petrychuk MV, Avksentyev AY, Sokolov VN, Kochelap VA, Belyaev AE, Tilak V, Smart J, Vertiatchikh A, Eastman LF. Separation of hot-electron and self-heating effects in two-dimensional AlGaN/GaN-based conducting channels Applied Physics Letters. 82: 748-750. DOI: 10.1063/1.1542928  0.766
2003 Kim H, Vertiatchikh A, Thompson RM, Tilak V, Prunty TR, Shealy JR, Eastman LF. Hot electron induced degradation of undoped AlGaN/GaN HFETs Microelectronics Reliability. 43: 823-827. DOI: 10.1016/S0026-2714(03)00066-0  0.802
2003 Danylyuk SV, Vitusevich SA, Podor B, Belyaev AE, Avksentyev AY, Tilak V, Smart J, Vertiatchikh A, Eastman LF. The investigation of properties of electron transport in AlGaN/GaN heterostructures Microelectronics Journal. 34: 575-577. DOI: 10.1016/S0026-2692(03)00052-1  0.764
2003 Zhang AP, Rowland LB, Kaminsky EB, Tilak V, Grande JC, Teetsov J, Vertiatchikh A, Eastman LF. Correlation of device performance and defects in AlGaN/GaN high-electron mobility transistors Journal of Electronic Materials. 32: 388-394. DOI: 10.1007/S11664-003-0163-6  0.779
2003 Ambacher O, Eickhoff M, Link A, Hermann M, Stutzmann M, Bernardini F, Fiorentini V, Smorchkova Y, Speck J, Mishra U, Schaff W, Tilak V, Eastman LF. Electronics and sensors based on pyroelectric AlGaN/GaN heterostructures: Part A: Polarization and pyroelectronics Physica Status Solidi C: Conferences. 1878-1907. DOI: 10.1002/Pssc.200303138  0.669
2003 Vitusevich SA, Klein N, Belyaev AE, Danylyuk SV, Petrychuk MV, Konakova RV, Kurakin AM, Rengevich AE, Avksentyev AY, Danilchenko BA, Tilak V, Smart J, Vertiatchikh A, Eastman LF. Effects of γ-irradiation on AlGaN/GaN-based HEMTs Physica Status Solidi (a) Applied Research. 195: 101-105. DOI: 10.1002/Pssa.200306264  0.77
2003 Matulionis A, Liberis J, Matulioniene I, Ramonas M, Eastman LF, Shealy JR, Tilak V, Vertiatchikh A. Hot-phonon temperature and lifetime in a biased AlxGa 1-xN/GaN channel estimated from noise analysis Physical Review B - Condensed Matter and Materials Physics. 68: 353381-353387.  0.762
2003 Zhang AP, Rowland LB, Kaminsky EB, Kretchmer JW, Tilak V, Alien AF, Edward BJ. Performance of AlGaN/GaN HEMTs for 2.8 GHz and 10 GHz power amplifier applications Ieee Mtt-S International Microwave Symposium Digest. 1: 251-254.  0.351
2003 Tilak V, Kaper V, Thompson R, Prunty T, Kim H, Smart J, Shealy JR, Eastman L. Correlation of pulsed IV measurements and high power performance of AlGaN/GaN HEMTs Institute of Physics Conference Series. 174: 287-290.  0.587
2003 Eastman LF, Tilak V, Thompson R, Green B, Kaper V, Prunty T, Shealy R, Smart J, Kim H. High power AlGaN/GaN HEMT's Institute of Physics Conference Series. 174: 227-230.  0.677
2003 Vitusevich SA, Petrychuk MV, Klein N, Danylyuk SV, Belyaev AE, Konakova RV, Avksentyev AY, Kurakin AM, Lytvyn PM, Danilchenko BA, Tilak V, Smart J, Vertiatchikh A, Eastman LF. Barrier material improvement in AlGaN/GaN microwave transistors under gamma irradiation treatment Materials Research Society Symposium - Proceedings. 764: 183-188.  0.718
2002 Kim H, Vertiatchikh A, Tilak V, Thompson RM, Prunty T, Shealy JR, Eastman LF. Hot electron effects on undoped AlGaN/GaN high electron mobility transistors Gaas Reliability Workshop, Proceedings. 2002: 5-6. DOI: 10.1109/GAAS.2002.1167856  0.8
2002 Kaper V, Tilak V, Green B, Thompson R, Prunty T, Eastman LF, Shealy JR. Time-domain characterization of nonlinear operation of an AlGaN/GaN HEMT 61st Arftg Conference Digest Spring 2003: Measurement Accuracy, Arftg Spring 2003. 97-102. DOI: 10.1109/ARFTGS.2003.1216872  0.687
2002 Shealy JR, Kaper V, Tilak V, Prunty T, Smart JA, Green B, Eastman LF. An AlGaN/GaN high-electron-mobility transistor with an AlN sub-buffer layer Journal of Physics Condensed Matter. 14: 3499-3509. DOI: 10.1088/0953-8984/14/13/308  0.81
2002 Balkan N, Arikan MC, Gokden S, Tilak V, Schaff B, Shealy RJ. Energy and momentum relaxation of hot electrons in GaN/AlGaN Journal of Physics Condensed Matter. 14: 3457-3468. DOI: 10.1088/0953-8984/14/13/305  0.407
2002 Ambacher O, Majewski J, Miskys C, Link A, Hermann M, Eickhoff M, Stutzmann M, Bernardini F, Fiorentini V, Tilak V, Schaff B, Eastman LF. Pyroelectric properties of Al(In)GaN/GaN hetero- and quantum well structures Journal of Physics Condensed Matter. 14: 3399-3434. DOI: 10.1088/0953-8984/14/13/302  0.509
2002 Vitusevich SA, Danylyuk SV, Klein N, Petrychuk MV, Sokolov VN, Kochelap VA, Belyaev AE, Tilak V, Smart J, Vertiatchikh A, Eastman LF. Excess low-frequency noise in AlGaN/GaN-based high-electron-mobility transistors Applied Physics Letters. 80: 2126-2128. DOI: 10.1063/1.1463202  0.772
2002 Vitusevich SA, Klein N, Petrychuk MV, Belyaev AE, Danylyuk SV, Konakova RV, Avksentyev AY, Danilchenko BA, Tilak V, Smart J, Vertiatchikh A, Eastman LF. Low-frequency noise in AlGaN/GaN high electron mobility transistors irradiated by γ-ray quanta Physica Status Solidi C: Conferences. 78-81. DOI: 10.1002/Pssc.200390121  0.757
2002 Vitusevich SA, Danylyuk SV, Klein N, Petrychuk MV, Avksentyev AY, Sokolov VN, Kochelap VA, Belyaev AE, Tilak V, Smart J, Vertiatchikh A, Eastman LF. Two-dimensional electron dynamics in GaN/AlGaN heterostructures Physica Status Solidi C: Conferences. 401-404. DOI: 10.1002/Pssc.200390073  0.764
2002 Eastman LF, Tilak V, Kaper V, Smart J, Thompson R, Green B, Shealy JR, Prunty T. Progress in high-power, high frequency AlGaN/GaN HEMTs Physica Status Solidi (a) Applied Research. 194: 433-438. DOI: 10.1002/1521-396X(200212)194:2<433::Aid-Pssa433>3.0.Co;2-R  0.784
2002 Koley G, Cha HY, Tilak V, Eastman LF, Spencer MG. Modulation of surface barrier in AlGaN/GaN heterostructures Physica Status Solidi (B) Basic Research. 234: 734-737. DOI: 10.1002/1521-3951(200212)234:3<734::Aid-Pssb734>3.0.Co;2-C  0.644
2002 Brar B, Boutros K, DeWames RE, Tilak V, Shealy R, Eastman L. Impact Ionization in High Performance AlGaN/GaN HEMTs Proceedings Ieee Lester Eastman Conference On High Performance Devices. 487-491.  0.318
2002 Green BM, Kaper VS, Tilak V, Shealy JR, Eastman LF. Dynamic loadline analysis of AlGaN/GaN HEMTS Proceedings Ieee Lester Eastman Conference On High Performance Devices. 443-452.  0.705
2002 Lee S, Tilak V, Webb KJ, Eastman LF. Intrinsic noise characteristics of AlGaN/GaN HEMTs Ieee Mtt-S International Microwave Symposium Digest. 3: 1415-1418.  0.422
2002 Kaper V, Tilak V, Kim H, Thompson R, Prunty T, Smart J, Eastman LF, Shealy JR. High power monolithic AlGaN/GaN HEMT oscillator Technical Digest - Gaas Ic Symposium (Gallium Arsenide Integrated Circuit). 251-254.  0.663
2002 Vitusevich SA, Klein N, Belyaev AE, Danylyuk SV, Petrychuk MV, Konakova RV, Kurakin AM, Rengevich AE, Avksentyev AY, Danilchenko BA, Tilak V, Smart J, Vertiatchikh A, Eastman LF. Radiation hardness of AlGaN/GaN based HEMTs Materials Research Society Symposium - Proceedings. 719: 133-138.  0.701
2002 Kaper V, Tilak V, Green B, Prunty T, Smart J, Eastman LF, Shealy JR. Dependence of Power and Efficiency of AlGaN/GaN HEMT's on the Load Resistance for Class B Bias Proceedings Ieee Lester Eastman Conference On High Performance Devices. 118-125.  0.721
2002 Koley G, Tilak V, Cha HY, Eastman LF, Spencer MG. Surface trapping effects observed in AlGAN/GaN HFETs and heterostructures Proceedings Ieee Lester Eastman Conference On High Performance Devices. 470-476.  0.58
2001 Kim H, Tilak V, Green BM, Cha HY, Smart JA, Shealy JR, Eastman LF. Degradation characteristics of AlGaN-GaN high electron mobility transistors Ieee International Reliability Physics Symposium Proceedings. 2001: 214-218. DOI: 10.1109/RELPHY.2001.922904  0.796
2001 Lee JW, Green BM, Tilak V, Lee S, Shealy JR, Eastman LF, Webb KJ. A broadband GaN push-pull distributed microwave power amplifier 2001 International Semiconductor Device Research Symposium, Isdrs 2001 - Proceedings. 391-393. DOI: 10.1109/ISDRS.2001.984526  0.747
2001 Tilak V, Green B, Kaper V, Kim H, Prunty T, Smart J, Shealy J, Eastman L. Influence of barrier thickness on the high-power performance of AlGaN/GaN HEMTs Ieee Electron Device Letters. 22: 504-506. DOI: 10.1109/55.962644  0.811
2001 Green BM, Tilak V, Lee S, Kim H, Smart JA, Webb KJ, Shealy JR, Eastman LF. High-power broad-band AlGaN/GaN HEMT MMICs on SiC substrates Ieee Transactions On Microwave Theory and Techniques. 49: 2486-2493. DOI: 10.1109/22.971640  0.773
2001 Eastman LF, Tilak V, Smart J, Green BM, Chumbes EM, Dimitrov R, Kim H, Ambacher OS, Weimann N, Prunty T, Murphy M, Schaff WJ, Shealy JR. Undoped AlGaN/GaN HEMTs for microwave power amplification Ieee Transactions On Electron Devices. 48: 479-485. DOI: 10.1109/16.906439  0.827
2001 Kim H, Tilak V, Green BM, Smart JA, Schaff WJ, Shealy JR, Eastman LF. Reliability Evaluation of High Power AlGaN/GaN HEMTs on SiC Substrate Physica Status Solidi (a) Applied Research. 188: 203-206. DOI: 10.1002/1521-396X(200111)188:1<203::Aid-Pssa203>3.0.Co;2-C  0.805
2001 Green BM, Tilak V, Lee S, Kim H, Smart JA, Webb KJ, Shealy JR, Eastman LF. High-power broadband AlGaN/GaN HEMT MMIC's on SiC substrates Ieee Mtt-S International Microwave Symposium Digest. 2: 1059-1062.  0.751
2001 Kim H, Tilak V, Green BM, Cha H, Smart JA, Shealy JR, Eastman LF. Degradation characteristics of AlGaN/GaN high electron mobility transistors Annual Proceedings - Reliability Physics (Symposium). 214-218.  0.774
2000 Tilak V, Dimitrov R, Murphy M, Green B, Smart J, Schaff WJ, Shealy JR, Eastman LF. Electric and morphology studies of ohmic contacts on AlGaN/GaN Materials Research Society Symposium - Proceedings. 622: T741-T746. DOI: 10.1557/Proc-622-T7.4.1  0.775
2000 Dimitrov R, Tilak V, Murphy M, Schaff WJ, Eastman LF, Lima AP, Miskys C, Ambacher O, Stutzmann M. Lateral polarity heterostructures by overgrowth of patterned AlxGa1-xN nucleation layers Materials Research Society Symposium - Proceedings. 622: T461-T466. DOI: 10.1557/Proc-622-T4.6.1  0.601
2000 Green BM, Chu KK, Smart JA, Tilak V, Kim H, Shealy JR, Eastman LF. Cascode connected AlGaN/GaN HEMTs on SiC substrates Ieee Microwave and Guided Wave Letters. 10: 316-318. DOI: 10.1109/75.862226  0.806
2000 Dimitrov R, Tilak V, Yeo W, Green B, Kim H, Smart J, Chumbes E, Shealy JR, Schaff W, Eastman LF, Miskys C, Ambacher O, Stutzmann M. Influence of oxygen and methane plasma on the electrical properties of undoped AlGaN/GaN heterostructures for high power transistors Solid-State Electronics. 44: 1361-1365. DOI: 10.1016/S0038-1101(00)00085-X  0.797
2000 Eastman LF, Green B, Smart J, Tilak V, Chumbes E, Kim H, Prunty T, Weimann N, Dimitrov R, Ambacher O, Schaff WJ, Shealy JR. Power limits of polarization-induced AlGaN/GaN HEMT's Proceedings of the Ieee Cornell Conference On Advanced Concepts in High Speed Semiconductor Devices and Circuits. 242-246.  0.732
2000 Green BM, Kim H, Chu KK, Lin HS, Tilak V, Shealy JR, Smart JA, Eastman LF. Validation of an analytical large signal model for AlGaN/GaN HEMTs Ieee Mtt-S International Microwave Symposium Digest. 2: 761-764.  0.611
2000 Tilak V, Green B, Kim H, Dimitrov R, Smart J, Schaff WJ, Shealy JR, Eastman LF. Effect of passivation on AlGaN/GaN HEMT device performance Ieee International Symposium On Compound Semiconductors, Proceedings. 357-363.  0.752
1999 Foutz BE, Murphy MJ, Ambacher O, Tilak V, Smart JA, Shealy JR, Schaff WJ, Eastman LF. The Influence of Spontaneous and Piezoelectric Polarization on Novel AlGaN/GaN/InGaN Device Structures Mrs Proceedings. 572: 501. DOI: 10.1557/Proc-572-501  0.747
1999 Foutz BE, Ambacher O, Murphy MJ, Tilak V, Eastman LF. Polarization Induced Charge at Heterojunctions of the III–V Nitrides and Their Alloys Physica Status Solidi B-Basic Solid State Physics. 216: 415-418. DOI: 10.1002/(Sici)1521-3951(199911)216:1<415::Aid-Pssb415>3.0.Co;2-W  0.582
Show low-probability matches.