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Sheng Chu, Ph.D. - Publications

Affiliations: 
2011 Electrical Engineering University of California, Riverside, Riverside, CA, United States 
Area:
learning and memory
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36 high-probability publications. We are testing a new system for linking publications to authors. You can help! If you notice any inaccuracies, please sign in and mark papers as correct or incorrect matches. If you identify any major omissions or other inaccuracies in the publication list, please let us know.

Year Citation  Score
2020 Chen Z, Zhang Y, Chu S, Sun R, Wang J, Chen J, Wei B, Zhang X, Zhou W, Shi Y, Wang Z. Grain Boundary Induced Ultralow Threshold Random Laser in a Single GaTe Flake. Acs Applied Materials & Interfaces. PMID 32337969 DOI: 10.1021/Acsami.0C03419  0.302
2018 Liu H, Ma X, Chen Z, Li Q, Lin Z, Liu H, Zhao L, Chu S. Controllable Synthesis of [11-2-2] Faceted InN Nanopyramids on ZnO for Photoelectrochemical Water Splitting. Small (Weinheim An Der Bergstrasse, Germany). e1703623. PMID 29611622 DOI: 10.1002/smll.201703623  0.301
2017 Li Q, Ma X, Liu H, Chen Z, Chen H, Chu S. Self-organized Growth of Two-dimensional GaTe Nanosheet on ZnO Nanowires for Heterojunctional Water Splitting Applications. Acs Applied Materials & Interfaces. PMID 28525707 DOI: 10.1021/acsami.7b04199  0.339
2016 Wang G, Chen X, Liu S, Wong CP, Chu S. Mechanical Chameleon through Dynamic Real-Time Plasmonic Tuning. Acs Nano. PMID 26760215 DOI: 10.1021/acsnano.5b07472  0.393
2016 Liu M, Liu HQ, Chu S, Peng RF, Chu SJ. [0001]-Oriented InN nanoleaves and nanowires: Synthesis, growth mechanism and optical properties Acta Metallurgica Sinica (English Letters). 29: 820-826. DOI: 10.1007/s40195-016-0456-4  0.311
2015 Wang B, Ren T, Chen S, Zhang B, Zhang R, Qi J, Chu S, Huang J, Liu J. Resistive switching in Ga- and Sb-doped ZnO single nanowire devices Journal of Materials Chemistry C. 3: 11881-11885. DOI: 10.1039/C5Tc02102B  0.351
2014 Lai B, Chen Z, Zhang J, Chu S, Chu G, Peng R. Bandgap-engineered CdxZn1-xO nanowires as active regions for green-light-emitting diodes. Nanotechnology. 25: 355201. PMID 25116031 DOI: 10.1088/0957-4484/25/35/355201  0.342
2014 Chen Z, Lai B, Zhang J, Wang G, Chu S. Hybrid material based on plasmonic nanodisks decorated ZnO and its application on nanoscale lasers. Nanotechnology. 25: 295203. PMID 24990516 DOI: 10.1088/0957-4484/25/29/295203  0.499
2014 Liu H, Chu S, Peng R, Jin B. ZnO three-dimensional hedgehog-like nanostructure: Synthesis, growth mechanism and optical enhancement Applied Physics a: Materials Science and Processing. 116: 39-44. DOI: 10.1007/s00339-014-8476-2  0.346
2013 Qi J, Huang J, Paul D, Ren J, Chu S, Liu J. Current self-complianced and self-rectifying resistive switching in Ag-electroded single Na-doped ZnO nanowires. Nanoscale. 5: 2651-4. PMID 23456175 DOI: 10.1039/C3Nr00027C  0.478
2013 Huang J, Chu S, Kong J, Liu J. ZnO p-n homojunction random laser based on nitrogen doped p-type nanowires 2013 Ieee Photonics Conference, Ipc 2013. 155-156. DOI: 10.1109/IPCon.2013.6656419  0.469
2013 Ren J, Yan D, Chu S, Liu J. Non-volatile memory effect of a high-density NiSi nano-dots floating gate memory using single triangular-shaped Si nanowire channel Applied Physics a: Materials Science and Processing. 111: 719-724. DOI: 10.1007/S00339-013-7641-3  0.506
2013 Kong J, Chu S, Huang J, Olmedo M, Zhou W, Zhang L, Chen Z, Liu J. Use of distributed Bragg reflectors to enhance Fabry-Pérot lasing in vertically aligned ZnO nanowires Applied Physics a: Materials Science and Processing. 110: 23-28. DOI: 10.1007/S00339-012-7330-7  0.741
2013 Huang J, Chu S, Kong J, Zhang L, Schwarz CM, Wang G, Chernyak L, Chen Z, Liu J. ZnO p-n Homojunction Random Laser Diode Based on Nitrogen-Doped p-type Nanowires Advanced Optical Materials. 1: 179-185. DOI: 10.1002/Adom.201200062  0.75
2012 Huang J, Li Z, Chu S, Liu J. P-type behavior of Sb doped ZnO from p-n-p memory structure Applied Physics Letters. 101. DOI: 10.1063/1.4769097  0.418
2012 Ren J, Hu H, Liu F, Chu S, Liu J. Strain-less directed self-assembly of Si nanocrystals on patterned SiO 2 substrate Journal of Applied Physics. 112. DOI: 10.1063/1.4749269  0.477
2012 Chu S, Ren J, Yan D, Huang J, Liu J. Noble metal nanodisks epitaxially formed on ZnO nanorods and their effect on photoluminescence Applied Physics Letters. 101. DOI: 10.1063/1.4739516  0.492
2012 Chu S, Wang G. Realization of 479 nm (2.59 eV) emission CdZnO nanorods and the application on solar cells Materials Letters. 85: 149-152. DOI: 10.1016/j.matlet.2012.06.098  0.36
2012 Kong J, Chu S, Zuo Z, Ren J, Olmedo M, Liu J. Low-threshold ZnO random lasing in a homojunction diode with embedded double heterostructure Applied Physics a: Materials Science and Processing. 107: 971-975. DOI: 10.1007/S00339-012-6850-5  0.745
2012 Liu J, Chu S, Wang G, Zhao J, Kong J, Li L, Ren J. Electrically pumped UV nanowire lasers 2012 Conference On Lasers and Electro-Optics, Cleo 2012.  0.696
2011 Chu S, Zhao S, Xiong Z, Chu G. MgZnO nanowires based deep ultraviolet heterojunction light emitting diodes. Journal of Nanoscience and Nanotechnology. 11: 8527-31. PMID 22400219 DOI: 10.1166/jnn.2011.4228  0.385
2011 Chu S, Wang G, Zhou W, Lin Y, Chernyak L, Zhao J, Kong J, Li L, Ren J, Liu J. Electrically pumped waveguide lasing from ZnO nanowires. Nature Nanotechnology. 6: 506-10. PMID 21725304 DOI: 10.1038/Nnano.2011.97  0.752
2011 Chu S, Zhao J, Zuo Z, Kong J, Li L, Liu J. Enhanced output power using MgZnO/ZnO/MgZnO double heterostructure in ZnO homojunction light-emitting diode Proceedings of Spie - the International Society For Optical Engineering. 7940. DOI: 10.1117/12.877322  0.447
2011 Chu S, Zhao J, Zuo Z, Kong J, Li L, Liu J. Enhanced output power using MgZnO/ZnO/MgZnO double heterostructure in ZnO homojunction light emitting diode Journal of Applied Physics. 109. DOI: 10.1117/12.877322  0.674
2011 Schwarz C, Flitsiyan E, Chernyak L, Casian V, Schneck R, Dashevsky Z, Chu S, Liu JL. Impact of forward bias injection on minority carrier transport in p-type ZnO nanowires Journal of Applied Physics. 110. DOI: 10.1063/1.3633224  0.378
2011 Wang G, Chu S, Zhan N, Lin Y, Chernyak L, Liu J. ZnO homojunction photodiodes based on Sb-doped p-type nanowire array and n-type film for ultraviolet detection Applied Physics Letters. 98. DOI: 10.1063/1.3551628  0.721
2011 Lin Y, Shatkhin M, Flitsiyan E, Chernyak L, Dashevsky Z, Chu S, Liu JL. Minority carrier transport in p-ZnO nanowires Journal of Applied Physics. 109. DOI: 10.1063/1.3530732  0.4
2011 Chu S, Morshed M, Li L, Huang J, Liu J. Smooth surface, low electron concentration, and high mobility ZnO films on c-plane sapphire Journal of Crystal Growth. 325: 36-40. DOI: 10.1016/J.Jcrysgro.2011.04.036  0.418
2011 Wang G, Chu S, Zhan N, Zhou H, Liu J. Synthesis and characterization of Ag-doped p-type ZnO nanowires Applied Physics a: Materials Science and Processing. 103: 951-954. DOI: 10.1007/S00339-011-6390-4  0.756
2010 Yang Z, Chu S, Chen WV, Li L, Kong J, Ren J, Yu PKL, Liu J. ZnO:Sb/ZnO:Ga light emitting diode on c-plane sapphire by molecular beam epitaxy Applied Physics Express. 3. DOI: 10.1143/Apex.3.032101  0.715
2008 Chu S, Olmedo M, Yang Z, Kong J, Liu J. Electrically pumped ultraviolet ZnO diode lasers on Si Applied Physics Letters. 93. DOI: 10.1063/1.3012579  0.769
2008 Kong J, Chu S, Olmedo M, Li L, Yang Z, Liu J. Dominant ultraviolet light emissions in packed ZnO columnar homojunction diodes Applied Physics Letters. 93. DOI: 10.1063/1.2992629  0.77
2008 Chu S, Lim JH, Mandalapu LJ, Yang Z, Li L, Liu JL. Sb-doped p-ZnOGa -doped n-ZnO homojunction ultraviolet light emitting diodes Applied Physics Letters. 92. DOI: 10.1063/1.2908968  0.546
2008 Mandalapu LJ, Yang Z, Chu S, Liu JL. Ultraviolet emission from Sb-doped p -type ZnO based heterojunction light-emitting diodes Applied Physics Letters. 92. DOI: 10.1063/1.2901018  0.534
2008 Chernyak L, Schwarz C, Flitsiyan ES, Chu S, Liu JL, Gartsman K. Electron beam induced current profiling of ZnO p-n homojunctions Applied Physics Letters. 92. DOI: 10.1063/1.2896613  0.377
2008 Yang Z, Lim JH, Chu S, Zuo Z, Liu JL. Study of the effect of plasma power on ZnO thin films growth using electron cyclotron resonance plasma-assisted molecular-beam epitaxy Applied Surface Science. 255: 3375-3380. DOI: 10.1016/J.Apsusc.2008.09.068  0.383
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