Martin Peckerar - Publications

Affiliations: 
Electrical and Computer Engineering University of Maryland, College Park, College Park, MD 

149 high-probability publications. We are testing a new system for linking publications to authors. You can help! If you notice any inaccuracies, please sign in and mark papers as correct or incorrect matches. If you identify any major omissions or other inaccuracies in the publication list, please let us know.

Year Citation  Score
2016 Maldonado JR, Peckerar M. X-ray lithography: Some history, current status and future prospects Microelectronic Engineering. 161: 87-93. DOI: 10.1016/j.mee.2016.03.052  0.8
2015 Liu G, Wen B, Xie T, Castillo A, Ha JY, Sullivan N, Debnath R, Davydov A, Peckerar M, Motayed A. Top-down fabrication of horizontally-aligned gallium nitride nanowire arrays for sensor development Microelectronic Engineering. 142: 58-63. DOI: 10.1016/j.mee.2015.08.004  0.8
2015 Kern D, Pérez-Murano F, Choi JW, Vieu C, Gentili M, Takai M, Peckerar M, Gogolides E. Editorial on the 30th anniversary of Microelectronic Engineering Microelectronic Engineering. 132: vii-viii. DOI: 10.1016/j.mee.2014.11.016  0.8
2014 Wang C, Park M, Zhao W, Liu G, Dilli Z, Peckerar M. An ultra-low power regulator system for WSNs powered by energy harvesting Solid-State Electronics. 101: 38-43. DOI: 10.1016/j.sse.2014.06.015  0.8
2014 Liu G, Lowy DA, Kahrim A, Wang C, Dilli Z, Kratzmeier N, Zhao W, Peckerar M. A low cost micro-heater for aerosol generation applications Microelectronic Engineering. 129: 46-52. DOI: 10.1016/j.mee.2014.07.011  1
2013 Yesilkoy F, Ropp C, Cummins Z, Probst R, Waks E, Shapiro B, Peckerar M. New applications and emerging technologies in nanolithography Nanolithography: the Art of Fabricating Nanoelectronic and Nanophotonic Devices and Systems. 538-550. DOI: 10.1533/9780857098757.538  1
2013 Zhao W, Choi K, Bauman S, Salter T, Lowy DA, Peckerar M, Khandani MK. An energy harvesting system surveyed for a variety of unattended electronic applications Solid-State Electronics. 79: 233-237. DOI: 10.1016/j.sse.2012.09.008  0.8
2013 Chung KJ, Peckerar M, Bernstein JB. Design optimization of laser-induced microbridges for low resistance interline connections in ICs Microelectronic Engineering. 103: 70-75. DOI: 10.1016/j.mee.2012.08.028  0.8
2013 Yesilkoy F, Potbhare S, Kratzmeier N, Akturk A, Goldsman N, Peckerar M, Dagenais M. A Mid-IR antenna integrated with a geometrically asymmetrical metal-insulator-metal rectifying diode Rectenna Solar Cells. 2147483647: 163-188. DOI: 10.1007/978-1-4614-3716-1_8  0.8
2012 Zhao W, Choi K, Bauman S, Dilli Z, Salter T, Peckerar M. A radio-frequency energy harvesting scheme for use in low-power ad hoc distributed networks Ieee Transactions On Circuits and Systems Ii: Express Briefs. 59: 573-577. DOI: 10.1109/TCSII.2012.2206935  0.8
2012 Zhao W, Peckerar M. A novel tunable neural oscillator for biological rhythmic behaviors Midwest Symposium On Circuits and Systems. 77-80. DOI: 10.1109/MWSCAS.2012.6291961  0.8
2012 Yesilkoy F, Mittal S, Goldsman N, Dagenais M, Peckerar M. A new process for the fabrication of planar antenna coupled Ni-NiOx-Ni tunnel junction devices Microelectronic Engineering. 98: 329-333. DOI: 10.1016/j.mee.2012.07.078  0.8
2012 Wright JB, Trotter DC, Zortman WA, Lentine AL, Shaner EA, Watts MR, Akturk A, Peckerar M. Cryogenic operation of silicon photonic modulators Integrated Photonics Research, Silicon and Nanophotonics, Iprsn 2012 0.8
2011 Peckerar M, Zhao W, Dilli Z, Dornajafi M, Lowy D, Potbhare S. Supercapacitor/battery hybrids for energy harvesting applications Ecs Transactions. 41: 31-35. DOI: 10.1149/1.3631483  0.8
2011 Peckerar M, Dornajafi M, Dilli Z, Goldsman N, Ngu Y, Boerger B, Van Wyck N, Gravelin J, Grenon B, Proctor RB, Lowy DA. Fabrication of flexible ultracapacitor/galvanic cell hybrids using advanced nanoparticle coating technology Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics. 29: 0110081-0110086. DOI: 10.1116/1.3524906  0.8
2011 Choi K, Yesilkoy F, Ryu G, Cho SH, Goldsman N, Dagenais M, Peckerar M. A focused asymmetric metal-insulator-metal tunneling diode: Fabrication, DC characteristics and RF rectification analysis Ieee Transactions On Electron Devices. 58: 3519-3528. DOI: 10.1109/TED.2011.2162414  0.8
2011 Yesilkoy F, Choi K, Mittal S, Peckerar M, Dagenais M. Antenna-coupled metal-insulator-metal tunneling diode for energy harvesting Ieee Photonic Society 24th Annual Meeting, Pho 2011. 453-454. DOI: 10.1109/PHO.2011.6110622  0.8
2011 Zhao W, Choi K, Dilli Z, Bauman S, Salter T, Peckerar M. Design of radio frequency energy harvesting system for an unmanned airplane 2011 International Semiconductor Device Research Symposium, Isdrs 2011. DOI: 10.1109/ISDRS.2011.6135319  0.8
2011 Peckerar M, Dilli Z, Dornajafi M, Goldsman N, Ngu Y, Proctor RB, Krupsaw BJ, Lowy DA. A novel high energy density flexible galvanic cell Energy and Environmental Science. 4: 1807-1812. DOI: 10.1039/c1ee01075a  1
2011 Li B, Zhai Y, Yang B, Salter T, Peckerar M, Goldsman N. Ultra low power phase detector and phase-locked loop designs and their application as a receiver Microelectronics Journal. 42: 358-364. DOI: 10.1016/j.mejo.2010.10.010  0.8
2011 Martin T, Christou A, Peckerar M. Thin film power source integrated with a-Si:H/a-SiGe:H Thin FilmMOSFETS on flexible substrates 2011 International Conference On Compound Semiconductor Manufacturing Technology, Cs Mantech 2011 1
2010 Dagenais M, Choi K, Yesilkoy F, Chryssis AN, Peckerar MC. Solar spectrum rectification using nano-antennas and tunneling diodes Proceedings of Spie - the International Society For Optical Engineering. 7605. DOI: 10.1117/12.845931  0.8
2010 Choi K, Ryu G, Yesilkoy F, Chryssis A, Goldsman N, Dagenais M, Peckerar M. Geometry enhanced asymmetric rectifying tunneling diodes Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics. 28: C6O50-C6O55. DOI: 10.1116/1.3501350  0.8
2010 Lauritzen KC, Talisa SH, Peckerar M. Impact of decorrelation techniques on sampling noise in radio-frequency applications Ieee Transactions On Instrumentation and Measurement. 59: 2272-2279. DOI: 10.1109/TIM.2009.2036344  1
2010 Akturk A, Holloway M, Potbhare S, Gundlach D, Li B, Goldsman N, Peckerar M, Cheung KP. Compact and distributed modeling of cryogenic bulk MOSFET operation Ieee Transactions On Electron Devices. 57: 1334-1342. DOI: 10.1109/TED.2010.2046458  0.8
2010 Ngu Y, Peckerar MC, Sander D, Eddy CR, Mastro MA, Hite JK, Holm RT, Henry RL, Tuchman A. Array of two UV-wavelength detector types Ieee Transactions On Electron Devices. 57: 1224-1229. DOI: 10.1109/TED.2010.2045706  0.8
2010 Choi K, Yesilkoy F, Chryssis A, Dagenais M, Peckerar M. New process development for planar-type CIC tunneling diodes Ieee Electron Device Letters. 31: 809-811. DOI: 10.1109/LED.2010.2049637  0.8
2010 Yesilkoy F, Choi K, Dagenais M, Peckerar M. Implementation of E-Beam Proximity Effect Correction using linear programming techniques for the fabrication of asymmetric bow-tie antennas Solid-State Electronics. 54: 1211-1215. DOI: 10.1016/j.sse.2010.05.009  0.8
2010 Akturk A, Peckerar M, Eng K, Hamlet J, Potbhare S, Longoria E, Young R, Gurrieri T, Carroll MS, Goldsman N. Compact modeling of 0.35 μm SOI CMOS technology node for 4 K DC operation using Verilog-A Microelectronic Engineering. 87: 2518-2524. DOI: 10.1016/j.mee.2010.06.005  0.8
2009 Kim S, Elkis R, Peckerar M. Device verification testing of high-speed analog-to-digital converters in satellite communication systems Ieee Transactions On Instrumentation and Measurement. 58: 270-280. DOI: 10.1109/TIM.2008.2005948  1
2009 Akturk A, Peckerar M, Dornajafi M, Goldsman N, Eng K, Gurrieri T, Carroll MS. Impact ionization and freeze-out model for simulation of low gate bias kink effect in SOI-MOSFETs operating at liquid He temperature International Conference On Simulation of Semiconductor Processes and Devices, Sispad. DOI: 10.1109/SISPAD.2009.5290227  0.8
2009 Choi K, Dagenais M, Peckerar MM. Fabrication of a thin film asymmetric tunneling diode using geometric field enhancement 2009 International Semiconductor Device Research Symposium, Isdrs '09. DOI: 10.1109/ISDRS.2009.5378297  0.8
2009 Park M, Choi K, Peckerar M. Ultra-low power series pass element voltage regulator for RF-DC energy harvesting 2009 International Semiconductor Device Research Symposium, Isdrs '09. DOI: 10.1109/ISDRS.2009.5378128  0.8
2009 Park M, Choi K, Singh S, Aslam S, Peckerar M. Low leakage current technology in P+N silicon photodiode detector 2009 International Semiconductor Device Research Symposium, Isdrs '09. DOI: 10.1109/ISDRS.2009.5378119  0.8
2009 Akturk A, Holloway M, Gundlach D, Potbhare S, Li B, Goldsman N, Peckerar M, Cheung KP. Distributed numerical modeling of low temperature MOSFET operation 2009 International Semiconductor Device Research Symposium, Isdrs '09. DOI: 10.1109/ISDRS.2009.5378004  0.8
2009 Salter T, Choi K, Peckerar M, Metze G, Goldsman N. RF energy scavenging system utilising switched capacitor DC-DC converter Electronics Letters. 45: 374-376. DOI: 10.1049/el.2009.0153  0.8
2008 Kim S, Choi K, Peckerar M, Christou A. Line-spike induced failure mechanism in integrated circuit bond-wires Ieee International Reliability Physics Symposium Proceedings. 647-648. DOI: 10.1109/RELPHY.2008.4558969  1
2008 Shen CC, Kupershtok R, Adl S, Bhattacharyya SS, Goldsman N, Peckerar M. Sensor support systems for asymmetric threat countermeasures Ieee Sensors Journal. 8: 682-691. DOI: 10.1109/JSEN.2008.922726  1
2008 Adl S, Peckerar M. Low-noise signal processing chain for high capacitance sensors Ieee Sensors Journal. 8: 1864-1870. DOI: 10.1109/JSEN.2008.2006258  1
2008 Kim S, Peckerar M. High-speed ADC dynamic performance validation: The impact of skew-corner lot testing Autotestcon (Proceedings). 29-32. DOI: 10.1109/AUTEST.2008.4662578  1
2008 Kanyogoro E, Peckerar M, Hughes H, Liu M. Band gap engineered resistor for mitigating linear energy transfer sensitivities in scaled submiron CMOS technology SRAM cells Solid-State Electronics. 52: 1555-1562. DOI: 10.1016/j.sse.2008.06.005  0.8
2008 Currano LJ, Bauman S, Churaman W, Peckerar M, Wienke J, Kim S, Yu M, Balachandran B. Latching ultra-low power MEMS shock sensors for acceleration monitoring Sensors and Actuators, a: Physical. 147: 490-497. DOI: 10.1016/j.sna.2008.06.009  1
2008 Dilli Z, Goldsman N, Peckerar M, Akturk A, Metze G. Design and testing of a self-powered 3D integrated SOI CMOS system Microelectronic Engineering. 85: 388-394. DOI: 10.1016/j.mee.2007.07.013  0.8
2007 Ngu Y, Peckerar M, Khbeis M, Lowy D, Goldsman N, Metze G, Tender L. An electrochemical cell with capacitance-enhanced double layer Ecs Transactions. 3: 77-85. DOI: 10.1149/1.2795108  0.8
2007 Ngu Y, Peckerar M, Dagenais M, Barry J, Dutt B. Lithography, plasmonics, and subwavelength aperture exposure technology Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 25: 2471-2475. DOI: 10.1116/1.2812524  0.8
2007 Peckerar M, Sander D, Srivastava A, Foli A, Vishkin U. Electron beam and optical proximity effect reduction for nanolithography: New results Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 25: 2288-2294. DOI: 10.1116/1.2806967  0.8
2007 Akturk A, Allnutt J, Dilli Z, Goldsman N, Peckerar M. Device modeling at cryogenic temperatures: Effects of incomplete ionization Ieee Transactions On Electron Devices. 54: 2984-2990. DOI: 10.1109/TED.2007.906966  0.8
2007 Akturk A, Goldsman N, Dilli Z, Peckerar M. Device performance and package induced self heating effects at cryogenic temperatures International Conference On Simulation of Semiconductor Processes and Devices, Sispad. 240-243. DOI: 10.1109/SISPAD.2006.282880  0.8
2007 Adl S, Peckerar M. Low noise pre-amplifier/amplifier chain for high capacitance sensors Proceedings of the 2007 Ieee Sensors Applications Symposium, Sas. DOI: 10.1109/SAS.2007.374390  1
2007 Ngu Y, Peckerar M, Liu X, Dagenais M, Messina M, Barry J. Lithography, plasmonics and sub-wavelength aperture exposure technology Conference On Quantum Electronics and Laser Science (Qels) - Technical Digest Series. DOI: 10.1109/QELS.2007.4431133  0.8
2007 Peckerar M, Sander D, Srivastava A, Foli A. Computational lithography for nanostructure science and technology 2007 International Semiconductor Device Research Symposium, Isdrs. DOI: 10.1109/ISDRS.2007.4422417  0.8
2007 Kim S, Elkis R, Peckerar MM. Corner lot process variation effects on high speed ADCs for satellite receivers 2007 International Semiconductor Device Research Symposium, Isdrs. DOI: 10.1109/ISDRS.2007.4422342  1
2007 Ngu YT, Dilli Z, Peckerar M, Goldsman N. High capacitance battery for powering distributed networks node devices 2007 International Semiconductor Device Research Symposium, Isdrs. DOI: 10.1109/ISDRS.2007.4422288  0.8
2007 Kanyogoro E, Peckerar M, Hughes H, Liu M. High resistivity material for mitigating linear energy transfer sensitivities in highly scaled Cmos Sram cells 2007 International Semiconductor Device Research Symposium, Isdrs. DOI: 10.1109/ISDRS.2007.4422262  0.8
2007 Akturk A, Goldsman N, Dilli Z, Peckerar M. Effects of cryogenic temperatures on small-signal MOSFET capacitances 2007 International Semiconductor Device Research Symposium, Isdrs. DOI: 10.1109/ISDRS.2007.4422237  0.8
2007 Seokjin K, Peckerar MM. High speed analog-to-digital converter design verification tests in satellite receivers Iscit 2007 - 2007 International Symposium On Communications and Information Technologies Proceedings. 110-115. DOI: 10.1109/ISCIT.2007.4391995  1
2007 He X, Kong W, Newcomb R, Peckerar M. Design and modelling of a low phase noise PLL frequency synthesizer Icsict-2006: 2006 8th International Conference On Solid-State and Integrated Circuit Technology, Proceedings. 1571-1573. DOI: 10.1109/ICSICT.2006.306314  0.8
2007 Chen PH, Peckerar M. A 5-bit interpolating flash ADC in 0. 13-μm SiGe BiGMOS Proceedings 2007 Ieee International Conference On Integrated Circuit Design and Technology, Icicdt. 161-163. DOI: 10.1109/ICICDT.2007.4299563  1
2007 Kim S, Elkis R, Peckerar MM. Device verification tests for high speed analog to digital converters used in satellite communication systems Autotestcon (Proceedings). 445-454. DOI: 10.1109/AUTEST.2007.4374252  1
2007 Eddy CR, Holm RT, Henry RL, Twigg ME, Bassim ND, Shirey LM, Glembocki OJ, Culbertson JC, Perkins FK, Peckerar MC, Ngu Y, Yan F. Improved GaN materials and devices through confined epitaxy Applied Physics Letters. 90. DOI: 10.1063/1.2724773  0.8
2006 Eddy CR, Mastro MA, Bassim ND, Twigg ME, Henry RL, Holm RT, Culbertson JC, Glembocki OJ, Caldwell JD, Neudeck PO, Trunek AJ, Powell JA, Peckerar MC, Ngu Y, Yan F, et al. Approaches to reduced-defect active regions for III-N devices Ecs Transactions. 3: 117-125. DOI: 10.1149/1.2357202  0.8
2006 He X, Kong W, Firestone T, Newcomb R, Peckerar M. Phase noise optimization of a symmetric CMOS LC VCO Ieee International Symposium On Industrial Electronics. 4: 2820-2823. DOI: 10.1109/ISIE.2006.296062  0.8
2005 Dilli Z, Goldsman N, Peckerar M, Metze G. Realization of self-powered electronics by 3-D integration 2005 International Semiconductor Device Research Symposium. 2005: 324-325.  0.8
2004 Huang H, Bernstein JB, Peckerar M, Luo J. Combined channel segmentation and buffer insertion for routability and performance improvement of field programmable analog arrays Proceedings - Ieee International Conference On Computer Design: Vlsi in Computers and Processors. 490-495. DOI: 10.1109/ICCD.2004.1347966  0.8
2003 Peckerar M, Perkins FK, Hodge-Miller A, Ehrlich R, Fertig S, Tender L. Sensor sensitivity training Ieee Circuits and Devices Magazine. 19: 17-24. DOI: 10.1109/MCD.2003.1191434  0.8
2003 Scribner D, Johnson L, Klein R, Bassett W, Howard JG, Skeath P, Wasserman L, Wright B, Perkins F, Peckerar M, Finch BJ, Graham R, Trautfield C, Taylor S, Humayun M. A retinal prosthesis device based on an 80×40 hybrid microelectronic-microwire glass array Proceedings of the Custom Integrated Circuits Conference. 517-520.  0.8
2003 Hodge-Miller A, Keith Perkins F, Peckerar M, Fertig S, Tender L. Gateless depletion mode field effect transistor for macromolecule sensing Proceedings - Ieee International Symposium On Circuits and Systems. 3: III918-III921.  0.8
2002 Perkins FK, Tender LM, Fertig SJ, Peckerar MC. Sensing macromolecules with microelectronics Proceedings of Spie - the International Society For Optical Engineering. 4608: 251-265. DOI: 10.1117/12.465477  0.8
2002 Scribner D, Humayun M, Justus B, Merritt C, Klein R, Howard JG, Peckerar M, Perkins F, Johnson L, Bassett W, Skeath P, Weiland J, De Juan E, Finch J, Graham R, et al. Towards a retinal prosthesis for the blind; advanced microelectronics combined with a nanochannel glass electrode array Proceedings of Spie - the International Society For Optical Engineering. 4608: 239-244. DOI: 10.1117/12.437271  0.8
2002 Postek M, Peckerar M. Nanostructures and biology - Some introductory remarks Proceedings of Spie - the International Society For Optical Engineering. 4608: 229. DOI: 10.1117/12.427104  0.8
2002 Yongsunthon R, Williams ED, Stanishevsky A, McCoy J, Pego R, Rous PJ, Peckerar M. Magnetic force microscopy signatures of defects in current-carrying lines Materials Research Society Symposium - Proceedings. 699: 107-112.  0.8
2001 Donnelly DW, Covington BC, Grun J, Fischer RP, Peckerar M, Felix CL, Djordjevic BB, Mignogna R, Meyer JR, Ting A, Manka CK. Athermal annealing of ion-implanted silicon 9th International Conference On Advanced Thermal Processing of Semiconductors, Rtp 2001. 133-144. DOI: 10.1109/RTP.2001.1013757  0.8
2001 Peckerar M, Bass R. E-beam proximity control in the sub-50 nm limit 2001 International Semiconductor Device Research Symposium, Isdrs 2001 - Proceedings. 358. DOI: 10.1109/ISDRS.2001.984515  0.8
2001 Donnelly DW, Covington BC, Grun J, Fischer RP, Peckerar M, Felix CL. Athermal annealing of low-energy boron implants in silicon Applied Physics Letters. 78: 2000-2002. DOI: 10.1063/1.1359784  0.8
2001 Scribner D, Humayun M, Justus B, Merritt C, Klein R, Howard JG, Peckerar M, Perkins F, Johnson L, Bassett W, Skeath P, Margalit E, Au Eong KG, Weiland J, De Juan E, et al. Intraocular retinal prosthesis test device Annual Reports of the Research Reactor Institute, Kyoto University. 4: 3430-3435.  0.8
2000 Peckerar M, Bass R, Rhee KW. Sub-0.1 μ electron-beam lithography for nanostructure development Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 18: 3143-3149. DOI: 10.1116/1.1321278  0.8
2000 Perkins FK, Fertig SJ, Brown KA, McCarthy D, Tender LM, Peckerar MC. An active microelectronic transducer for enabling label-free miniaturized chemical sensors Technical Digest - International Electron Devices Meeting. 407-410.  0.8
2000 Grun J, Fischer RP, Peckerar M, Felix CL, Covington BC, DeSisto WJ, Donnelly DW, Ting A, Manka CK. Athermal annealing of phosphorus-ion-implanted silicon Applied Physics Letters. 77: 1997-1999.  0.8
1998 Shen CC, Murguia J, Goldsman N, Peckerar M, Melngailis J, Antoniadis DA. Use of focusEDion-beam and modeling to optimize submicron MOSFET characteristics Ieee Transactions On Electron Devices. 45: 453-459. DOI: 10.1109/16.658680  0.8
1998 Wang W, McCarthy D, Park D, Ma D, Marrian C, Peckerar M, Goldsman N, Melngailis J, Berry IL. Fabrication and characterization of buried subchannel implant n-metal-oxide-semiconductor transistors Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 16: 3812-3816.  0.8
1998 Perkins FK, Marrian CRK, Peckerar MC. Improving pattern placement using through-the-membrane signal monitoring Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 16: 3567-3571.  0.8
1998 Pecht MG, Bernstein J, Searls D, Peckerar M. Korea's focus on market dominance: Korea's government and industry partner to establish and maintain a world-class semiconductor business Semiconductor International. 21: 118-122.  0.8
1997 Perkins FK, Marrian CRK, Peckerar MC. Novel technique for improving pattern placement in membrane mask making Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 15: 2218-2223.  0.8
1997 Wang W, Chang C, Ma D, Peckerar M, Berry I, Goldsman N, Melngailis J. Self-aligned subchannel implant complementary metal-oxide semiconductor devices fabrication Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 15: 2816-2820.  0.8
1996 Perkins FK, Marrian CR, Peckerar MC. Improved pattern placement in membrane mask making Proceedings of Spie - the International Society For Optical Engineering. 2884: 344-352. DOI: 10.1117/12.262817  0.8
1996 Peckerar M, Marrian C. Pattern density dependent contrast in commonly used dose-equalization schemes Proceedings of Spie - the International Society For Optical Engineering. 2723: 134-142. DOI: 10.1117/12.240463  0.8
1996 Perkins FK, McCarthy D, Marrian CRK, Peckerar MC. Position measurement of high energy e-beams for pattern placement improvement Proceedings of Spie - the International Society For Optical Engineering. 2723: 91-101. DOI: 10.1117/12.240459  0.8
1996 Peckerar M, Marrian C, Perkins FK. Feature contrast in dose-equalization schemes used for electron-beam proximity control Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 14: 3880-3886.  0.8
1996 Marrian CRK, Perkins FK, Park D, Dobisz EA, Peckerar MC, Rhee KW, Bass R. Modeling of electron elastic and inelastic scattering Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 14: 3864-3869.  0.8
1995 Burkhardt M, Silverman S, Smith HI, Antoniadis DA, Rhee KW, Peckerar MC. Gap control in the fabrication of quantum-effect devices using X-ray nanolithography Microelectronic Engineering. 27: 307-310. DOI: 10.1016/0167-9317(94)00113-9  0.8
1994 Chu W, Foster KW, Shirey LM, Rhee KW, Kosakowski J, Isaacson IP, McCarthy D, Eddy CR, Dobisz EA, Marrian CRK, Peckerar MC. Reactive ion etching of high-aspect-ratio 100 nm linewidth features in tungsten Applied Physics Letters. 64: 2172-2174. DOI: 10.1063/1.111666  0.8
1994 Witczak SC, Gaitan M, Suehle JS, Peckerar MC, Ma DI. The interaction of stoichiometry, mechanical stress, and interface trap density in LPCVD Si-rich SiNx;Si structures Solid State Electronics. 37: 1695-1704. DOI: 10.1016/0038-1101(94)90216-X  0.8
1994 Glembocki OJ, Tuchman JA, Holm RT, Peckerar MC. Fourier transform analysis of Franz-Keldysh oscillations in electromodulation spectroscopy Ieee Leos Annual Meeting - Proceedings. 2: 214-215.  0.8
1993 Peckerar MC, Maldonado JR. X-Ray Lithography—An Overview Proceedings of the Ieee. 81: 1249-1274. DOI: 10.1109/5.237534  0.8
1993 Rhee KW, Peckerar MC. Proximity effect reduction using thin insulating layers Applied Physics Letters. 62: 533-534. DOI: 10.1063/1.108903  0.8
1992 Ma DI, Qadri SB, Peckerar MC, McCarthy D. Characterization of the electrical bias induced strain variation in metal-oxide-semiconductor field effect transistors using x-ray double crystal topography Journal of Vacuum Science and Technology a: Vacuum, Surfaces and Films. 10: 1012-1019. DOI: 10.1116/1.578195  0.8
1992 Ma DI, Campisi GJ, Qadri SB, Peckerar MC. Nondestructive evaluation of silicon-on-insulator substrates using x-ray double crystal topography Journal of Vacuum Science and Technology a: Vacuum, Surfaces and Films. 10: 1006-1011. DOI: 10.1116/1.578194  0.8
1992 Pati YC, Krishnaprasad PS, Peckerar MC. An analog neural network solution to the inverse problem of 'early taction' Ieee Transactions On Robotics and Automation. 8: 196-212. DOI: 10.1109/70.134274  0.8
1992 Jacunski MD, Peckerar MC. A Model for Radiation Induced Edge Leakage in Bulk Silicon NMOS Transistors Ieee Transactions On Nuclear Science. 39: 1947-1952. DOI: 10.1109/23.211390  0.8
1992 Peckerar M, Rebbert M, Gopalakrishnan G. Apparent super resolution in high-contrast photoresists Applied Physics Letters. 61: 2036-2038. DOI: 10.1063/1.108351  0.8
1992 Calvert JM, Georger JH, Schnur JM, Schoen PE, Peckerar MC, Pehrsson PE. Deep UV photochemistry and patterning of self-assembled monolayer films Thin Solid Films. 210: 359-363. DOI: 10.1016/0040-6090(92)90257-C  0.8
1991 Barouch E, Hollerbach U, Orszag SA, Bradie B, Peckerar M. Modeling Process Latitude in Uv Projection Lithography Ieee Electron Device Letters. 12: 513-514. DOI: 10.1109/55.119174  0.8
1991 Marrian CRK, Dobisz EA, Peckerar MC. Nanostructure Patterning Proceedings of the Ieee. 79: 1149-1158. DOI: 10.1109/5.92074  0.8
1991 Peckerar M, Shamma SA, Rebbert M, Kosakowski J, Isaacson P. Passive microelectrode arrays for recording of neural signals: A simplified fabrication process Review of Scientific Instruments. 62: 2276-2280. DOI: 10.1063/1.1142349  0.8
1991 Ma DI, Campisi GJ, Qadri SB, Peckerar MC. Characterization of silicon on insulator substrates using reflection mode double-crystal X-ray topography Thin Solid Films. 206: 27-33. DOI: 10.1016/0040-6090(91)90388-E  0.8
1991 Ma DI, Qadri SB, Peckerar MC, McCarthy D. Double-crystal X-ray topography characterization of an electrical-bias-induced stress variation in metal-oxide-semiconductor field effect transistors Thin Solid Films. 206: 18-26. DOI: 10.1016/0040-6090(91)90387-D  0.8
1991 Ting AC, Tang CM, Ma D, McCarthy D, Peckerar M, Swyden TA. Field emitter arrays with current saturation and current control capabilities . 94-95.  0.8
1990 Marrian CRK, Mack IA, Banks C, Peckerar MC. Electronic “Neural” Net Algorithm for Maximum Entropy Solutions to Ill-Posed Problems—Part II: Multiply Connected Electronic Circuit Implementation Ieee Transactions On Circuits and Systems. 37: 110-113. DOI: 10.1109/31.45695  0.8
1990 Peckerar MC, Rhee KW, Ho PT, Goldhar J. A novel test structure for grating pitch determination with near-angstrom accuracy Journal of Applied Physics. 68: 5381-5382. DOI: 10.1063/1.347039  0.8
1989 Culhane AD, Peckerar MC, Marrian CRK. A Neural Net Approach to Discrete Hartley and Fourier Transforms Ieee Transactions On Circuits and Systems. 36: 695-703. DOI: 10.1109/31.31318  0.8
1989 Marrian CRK, Peckerar MC. Electronic “Neural” Net Algorithm for Maximum Entropy Solutions of Ill-Posed Problems Ieee Transactions On Circuits and Systems. 36: 288-294. DOI: 10.1109/31.20208  0.8
1989 Rakkhit R, Peckerar MC, Yao CT. Investigation of the time dependence of current degradation in MOS devices . 103-109.  0.8
1988 Yao CT, Peckerar M, Friedman D, Hughes H. On the Effect of Hot-Carrier Stressing on MOSFET Terminal Capacitances Ieee Transactions On Electron Devices. 35: 384-386. DOI: 10.1109/16.2465  0.8
1988 Dutta P, Candela GA, Chandler-Horowitz D, Marchiando JF, Peckerar MC. Nondestructive characterization of oxygen-ion-implanted silicon- on-insulator using multiple-angle ellipsometry Journal of Applied Physics. 64: 2754-2756. DOI: 10.1063/1.341620  0.8
1988 Pati YC, Krishnaprasad PS, Peckerar MC, Marrian CRK. Neural networks & tactile imaging Neural Networks. 1: 459. DOI: 10.1016/0893-6080(88)90483-2  0.8
1988 Culhane AD, Peckerar MC, Marrian CRK. Neural net approach to discrete Fourier transforms Neural Networks. 1: 432. DOI: 10.1016/0893-6080(88)90456-X  0.8
1988 Pati YC, Friedman D, Krishnaprasad PS, Yao CT, Peckerar MC, Yang R, Marrian CRK. NEURAL NETWORKS FOR TACTILE PERCEPTION . 134-139.  0.8
1987 Chaker M, Pepin H, Bareau V, Boily S, Lafontaine B, Fabbro R, Toubhans I, Faral B, Currie JF, Nagel D, Peckerar M. LASER CREATED X-RAY SOURCES FOR MICROLITHOGRAPHY Proceedings of Spie - the International Society For Optical Engineering. 733: 58-64. DOI: 10.1117/12.964892  0.8
1987 Qadri SB, Ma D, Peckerar M. Double-crystal x-ray topographic determination of local strain in metal-oxide-semiconductor device structures Applied Physics Letters. 51: 1827-1829. DOI: 10.1063/1.98483  0.8
1987 Peckerar MC, Bosiers JT, McCarthy D, Saks NS, Michels DJ. Modeling UV response of rear-surface sensitized charge-coupled devices Applied Physics Letters. 50: 1275-1277. DOI: 10.1063/1.97882  0.8
1987 Yao CT, Peckerar MC, Wasilik JH, Amazeen C, Bishop S. NOVEL THREE-DIMENSIONAL MICROSTRUCTURE FABRICATION TECHNIQUE FOR A TRIAXIAL TACTILE SENSOR ARRAY 0.8
1987 Marrian CRK, Peckerar MC. ELECTRONIC 'NEURAL' NET ALGORITHM FOR MAXIMUM ENTROPY DECONVOLUTION . iii/749-757.  0.8
1986 Pépin H, Alaterre P, Chaker M, Lavigne P, Martin F, Fabbro R, Farai B, Nagel D, Peckerar M. Study and application of laser created x-ray sources Proceedings of Spie - the International Society For Optical Engineering. 664: 179-185. DOI: 10.1117/12.938700  0.8
1986 Bosiers JT, Saks NS, Mc Carthy D, Peckerar MC, Michels DJ. CCD's for high resolution imaging in the near and far UV Proceedings of Spie - the International Society For Optical Engineering. 687: 126-135. DOI: 10.1117/12.936551  0.8
1986 Yao CT, Peckerar M, Friedman D, Hughes H. HOT ELECTRON EFFECT ON MOSFET TERMINAL CAPACITANCES Proceedings of the Custom Integrated Circuits Conference. 208-211.  0.8
1985 Saks N, Peckerar M, Michels D, McCarthy D, Bosiers J. DEEP DEPLETION CCD'S FOR U. V. AND X-RAY IMAGING FOR ASTRONOMY Proceedings of the Custom Integrated Circuits Conference. 124-127.  0.8
1985 Bosiers JT, Saks NS, Michels DJ, McCarthy D, Peckerar MC. DEEP-DEPLETION CCDS WITH IMPROVED UV SENSITIVITY Technical Digest - International Electron Devices Meeting. 448-451.  0.8
1985 Christou A, Tseng W, Peckerar M, Anderson WT, McCarthy DM, Buot FA, Campbell AB, Knudson AR. FAILURE MECHANISM STUDY OF GAAS MODFET DEVICES AND INTEGRATED CIRCUITS Annual Proceedings - Reliability Physics (Symposium). 54-59.  0.8
1985 Christou A, Peckerar MC. PLANAR MOCVD GaAlAs/GaAs HIGH-FREQUENCY MIXER DIODES Electronics Letters. 21: 305-307.  0.8
1985 Richmond ED, Cristou A, Knudson AR, Wilkins BR, Tseng W, Peckerar MC, Kawayoshi H. CHARACTERIZATION OF LOW TEMPERATURE MBE SILICON ON SAPPHIRE FILMS Electrochemical Society Extended Abstracts. 85: 205.  0.8
1984 Whitlock RR, Emery MH, Stamper JA, McLean EA, Obenschain SP, Peckerar MC. Observation of Rayleigh-Taylor-like structures in a laser-accelerated foil Physical Review Letters. 52: 819-822. DOI: 10.1103/PhysRevLett.52.819  0.8
1983 Brown DB, Ma DI, Dozier CM, Peckerar MC. Thermal annealing of radiation induced defects: A diffusion-limited process? Ieee Transactions On Nuclear Science. 30: 4059-4063. DOI: 10.1109/TNS.1983.4333081  0.8
1983 Peckerar MC, Brown DB, Lin HC, Ma DI. Modeling Total Dose Effects in Narrow-Channel Devices Ieee Transactions On Electron Devices. 30: 1159-1164. DOI: 10.1109/T-ED.1983.21272  0.8
1983 Peckerar MC, Neidert RE. High-Speed Microelectronics for Military Applications Proceedings of the Ieee. 71: 657-666. DOI: 10.1109/PROC.1983.12647  0.8
1982 Peckerar MC, Dozier CM, Brown DB, Patterson D, McCarthy D, Ma D. Radiation effects introduced by x-ray lithography in MOS devices Ieee Transactions On Nuclear Science. 29: 1697-1701. DOI: 10.1109/TNS.1982.4336431  0.8
1982 Hughey LR, Williams RT, Rife JC, Nagel DJ, Peckerar MC. Instrumentation for XUV lithography at SURF-II Nuclear Instruments and Methods. 195: 267-271. DOI: 10.1016/0029-554X(82)90782-0  0.8
1982 Driver MC, Blais PD, Wicstrom RA, Chang CD, Oakes JG, Peckerar M. DEEP UV (210 NM) PHOTOLITHOGRAPHY PROCESS FOR GaAs FETs USING DOUBLE LAYER PHOTORESISTS . 150-153.  0.8
1981 Peckerar MC, McCann DH, Yu L. X-ray imaging with a charge-coupled device fabricated on a high-resistivity silicon substrate Applied Physics Letters. 39: 55-57. DOI: 10.1063/1.92561  0.8
1981 Stein HJ, Peercy PS, Peckerar M. Properties of magnetron sputtered hydrogenated amorphous silicon Journal of Electronic Materials. 10: 797-810. DOI: 10.1007/BF02660132  0.8
1980 Peckerar MC, Bluzer N. Hydrogen Annealed Nitride/Oxide Dielectric Structures for Radiation Hardness Ieee Transactions On Nuclear Science. 27: 1753-1757. DOI: 10.1109/TNS.1980.4331101  0.8
1979 Peckerar M, Fulton R, Blaise P, Brown D, Whitlock R. RADIATION EFFECTS IN MOS DEVICES CAUSED BY X-RAY AND e-BEAM LITHOGRAPHY Journal of Vacuum Science & Technology. 16: 1658-1661. DOI: 10.1116/1.570265  0.8
1979 Peckerar MC, McCann D, Blaha F, Mend W, Fulton R. DEEP DEPLETION CHARGE-COUPLED DEVICES FOR X-RAY AND IR SENSING APPLICATIONS Advances in Chemistry Series. 144-146.  0.8
1979 Bluzer N, Peckerar MC, Schneider JB, Fulton R. RADIATION HARD CHARGE-COUPLED DEVICE OPERATING AT 77 degree K USING NITRIDE/OXIDE GATE INSULATORS Advances in Chemistry Series. 629-632.  0.8
1978 Nagel DJ, Whitlock RR, Greig JR, Pechacek RE, Peckerar MC. Laser-plasma source for pulsed x-ray lithography Proceedings of Spie - the International Society For Optical Engineering. 135: 46-53. DOI: 10.1117/12.956112  0.8
1978 Nagel DJ, McMahon JM, Whitlock RR, Greig JR, Pechacek RE, Peckerar MC. LITHOGRAPHY AND HIGH-RESOLUTION RADIOGRAPHY WITH PULSED X-RAYS Japanese Journal of Applied Physics. 17: 472-475.  0.8
1978 Nagel DJ, Peckerar MC, Whitlock RR, Greig JR, Pechacek RE. SUBMICROSECOND X-RAY LITHOGRAPHY Electron Lett. 14: 781-782.  0.8
1977 White MH, Dzimianski JW, Peckerar MC. Endurance of Thin-Oxide Nonvolatile MNOS Memory Transistors Ieee Transactions On Electron Devices. 24: 577-580. DOI: 10.1109/T-ED.1977.18781  0.8
1977 Peckerar MC, Baker WD, Nagel DJ. X-ray sensitivity of a charge-coupled-device array Journal of Applied Physics. 48: 2565-2569. DOI: 10.1063/1.323974  0.8
1975 Brown DB, Gilfrich JV, Peckerar MC. Measurement and calculation of absolute intensities of x-ray spectra Journal of Applied Physics. 46: 4537-4540. DOI: 10.1063/1.321390  0.8
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