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Siddharth Potbhare, Ph.D. - Publications

Affiliations: 
2008 Electrical Engineering University of Maryland, College Park, College Park, MD 
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47 high-probability publications. We are testing a new system for linking publications to authors. You can help! If you notice any inaccuracies, please sign in and mark papers as correct or incorrect matches. If you identify any major omissions or other inaccuracies in the publication list, please let us know.

Year Citation  Score
2015 Dilli Z, Akturk A, Goldsman N, Potbhare S. An enhanced specialized SiC power MOSFET simulation system International Conference On Simulation of Semiconductor Processes and Devices, Sispad. 2015: 463-466. DOI: 10.1109/SISPAD.2015.7292362  0.786
2014 Akturk A, Goldsman N, Potbhare S. Electro-thermal simulation of silicon carbide power modules International Conference On Simulation of Semiconductor Processes and Devices, Sispad. 237-240. DOI: 10.1109/SISPAD.2014.6931607  0.718
2014 Farneth IP, Satinu MB, Haoyu W, Member S, Khaligh A, Potbhare S, Giroux S, Akturk A, Goldsman N. Design of a phase-shifted zvs full-bridge front-end dc/dc converter for fuel cell inverter applications 2014 Ieee Transportation Electrification Conference and Expo: Components, Systems, and Power Electronics - From Technology to Business and Public Policy, Itec 2014.  0.658
2013 Ettisserry DP, Salemi S, Goldsman N, Potbhare S, Akturk A, Lelis A. Identification and quantification of 4H-SiC (0001)/SiO2 interface defects by combining density functional and device simulations International Conference On Simulation of Semiconductor Processes and Devices, Sispad. 396-399. DOI: 10.1109/SISPAD.2013.6650658  0.784
2013 Yesilkoy F, Potbhare S, Kratzmeier N, Akturk A, Goldsman N, Peckerar M, Dagenais M. A Mid-IR antenna integrated with a geometrically asymmetrical metal-insulator-metal rectifying diode Rectenna Solar Cells. 2147483647: 163-188. DOI: 10.1007/978-1-4614-3716-1_8  0.627
2012 Salemi S, Akturk A, Potbhare S, Lelis A, Goldsman N. Total near interface trap density calculation of 4H-SiC/SiO 2 structures before and after nitrogen passivation Materials Science Forum. 717: 457-460. DOI: 10.4028/Www.Scientific.Net/Msf.717-720.457  0.785
2012 Salemi S, Akturk A, Potbhare S, Lelis A, Goldsman N. Silicon carbide-silicon dioxide transition layer mobility Materials Science Forum. 717: 449-452. DOI: 10.4028/Www.Scientific.Net/Msf.717-720.449  0.776
2012 Akturk A, Dandin M, Vert A, Soloviev S, Sandvik P, Potbhare S, Goldsman N, Abshire P. Silicon carbide ultraviolet photodetector modeling, design and experiments Materials Science Forum. 717: 1199-1202. DOI: 10.4028/Www.Scientific.Net/Msf.717-720.1199  0.712
2012 Akturk A, McGarrity JM, Potbhare S, Goldsman N. Radiation effects in commercial 1200 v 24 A silicon carbide power MOSFETs Ieee Transactions On Nuclear Science. 59: 3258-3264. DOI: 10.1109/Tns.2012.2223763  0.716
2011 Goldsman N, Potbhare S, Akturk A, Salemi S, Lelis A. Modeling and simulation of silicon carbide power systems Ecs Transactions. 41: 177-181. DOI: 10.1149/1.3631495  0.782
2011 Peckerar M, Zhao W, Dilli Z, Dornajafi M, Lowy D, Potbhare S. Supercapacitor/battery hybrids for energy harvesting applications Ecs Transactions. 41: 31-35. DOI: 10.1149/1.3631483  0.677
2011 Akturk A, Salemi S, Goldsman N, Potbhare S, Lelis A. Density functional theory based simulation of carrier transport in silicon carbide and silicon carbide-silicon dioxide interfaces International Conference On Simulation of Semiconductor Processes and Devices, Sispad. 119-122. DOI: 10.1109/SISPAD.2011.6035064  0.791
2011 Cho I, Shen CC, Potbhare S, Bhattacharyya SS, Goldsman N. Design methods for wireless sensor network building energy monitoring systems Proceedings - Conference On Local Computer Networks, Lcn. 974-981. DOI: 10.1109/LCN.2011.6115580  0.438
2011 Salemi S, Akturk A, Potbhare S, Lelis A, Goldsman N. The effect of different passivations on near interface trap density of 4H-SiC/SiO 2 structures 2011 International Semiconductor Device Research Symposium, Isdrs 2011. DOI: 10.1109/ISDRS.2011.6135305  0.787
2011 Dandin M, Akturk A, Vert A, Soloviev S, Sandvik P, Potbhare S, Goldsman N, Abshire P, Cheung KP. Optoelectronic characterization of 4H-SiC avalanche photodiodes operated in DC and in geiger mode 2011 International Semiconductor Device Research Symposium, Isdrs 2011. DOI: 10.1109/ISDRS.2011.6135207  0.717
2011 Salemi S, Akturk A, Potbhare S, Lelis A, Goldsman N. The effects of different silicon carbide Silicon dioxide interface passivations on transition region mobility and transport 2011 International Semiconductor Device Research Symposium, Isdrs 2011. DOI: 10.1109/ISDRS.2011.6135143  0.789
2010 Potbhare S, Akturk A, Goldsman N, Lelis A, Dhar S, Agarwal A. Effect of band-edge interface traps and transition region mobility on transport in 4H-SiC MOSFETs Materials Science Forum. 645: 975-978. DOI: 10.4028/Www.Scientific.Net/Msf.645-648.975  0.755
2010 Potbhare S, Goldsman N, Akturk A, Lelis A. Mixed mode modeling and characterization of a 4H-SiC power DMOSFET based DC-DC power converter Materials Science Forum. 645: 1163-1166. DOI: 10.4028/Www.Scientific.Net/Msf.645-648.1163  0.732
2010 Sood AK, Richwine RA, Puri YR, Akturk A, Goldsman N, Potbhare S, Fernandes G, Hsu CH, Kim JH, Xu J, Dhar NK, Wijewarnasuriya PS, Lineberry BI. Design and development of carbon nanostructure-based microbolometers for IR imagers and sensors Proceedings of Spie - the International Society For Optical Engineering. 7679. DOI: 10.1117/12.852730  0.656
2010 Akturk A, Holloway M, Potbhare S, Gundlach D, Li B, Goldsman N, Peckerar M, Cheung KP. Compact and distributed modeling of cryogenic bulk MOSFET operation Ieee Transactions On Electron Devices. 57: 1334-1342. DOI: 10.1109/Ted.2010.2046458  0.721
2010 Akturk A, Peckerar M, Eng K, Hamlet J, Potbhare S, Longoria E, Young R, Gurrieri T, Carroll MS, Goldsman N. Compact modeling of 0.35 μm SOI CMOS technology node for 4 K DC operation using Verilog-A Microelectronic Engineering. 87: 2518-2524. DOI: 10.1016/J.Mee.2010.06.005  0.695
2010 Potbhare S, Akturk A, Goldsman N, McGarrity JM, Agarwal A. Modeling and design of high temperature silicon carbide DMOSFET based medium power DC-DC converter International Conference and Exhibition On High Temperature Electronics 2010, Hitec 2010. 144-151.  0.726
2009 Potbhare S, Goldsman N, Akturk A, Lelis A, Green R. Investigation of on and off state characteristics of 4H-SiC DMOSFETs Materials Science Forum. 615: 805-808. DOI: 10.4028/Www.Scientific.Net/Msf.615-617.805  0.756
2009 Habersat DB, Lelis AJ, Potbhare S, Goldsman N. Improvements in SiC MOS processing as revealed by studies of fixed and oxide trap charge Materials Science Forum. 615: 769-772. DOI: 10.4028/Www.Scientific.Net/Msf.615-617.769  0.602
2009 Habersat DB, Lelis AJ, McGarrity JM, McLean FB, Potbhare S. The effect of nitridation on SiC MOS oxides as evaluated by charge pumping Materials Science Forum. 600: 743-746. DOI: 10.4028/Www.Scientific.Net/Msf.600-603.743  0.409
2009 Potbhare S, Goldsman N, Akturk A, Lelis A. Effect of random surface charge distribution on transport in 4H-SiC MOSFETs 2009 International Semiconductor Device Research Symposium, Isdrs '09. DOI: 10.1109/ISDRS.2009.5378149  0.673
2009 Akturk A, Potbhare S, Goldsman N, Lelis A. Self-consistent thermal and electrical analysis of silicon carbide power DMOSFET heating and cooling 2009 International Semiconductor Device Research Symposium, Isdrs '09. DOI: 10.1109/ISDRS.2009.5378139  0.642
2009 Akturk A, Holloway M, Gundlach D, Potbhare S, Li B, Goldsman N, Peckerar M, Cheung KP. Distributed numerical modeling of low temperature MOSFET operation 2009 International Semiconductor Device Research Symposium, Isdrs '09. DOI: 10.1109/ISDRS.2009.5378004  0.654
2009 Gurfinkel M, Potbhare S, Xiong HD, Suehle JS, Shapira Y, Lelis AJ, Habersat D, Goldsman N. Ion implantation and SiC transistor performance Journal of Applied Physics. 105. DOI: 10.1063/1.3110071  0.624
2009 Akturk A, Goldsman N, Potbhare S, Lelis A. High field density-functional-theory based Monte Carlo: 4H -SiC impact ionization and velocity saturation Journal of Applied Physics. 105. DOI: 10.1063/1.3074107  0.709
2008 Potbhare S, Goldsman N, Akturk A, Gurfinkel M, Lelis A, Suehle JS. Energy- and time-dependent dynamics of trap occupation in 4H-SiC MOSFETs Ieee Transactions On Electron Devices. 55: 2061-2070. DOI: 10.1109/Ted.2008.926668  0.736
2008 Potbhare S, Goldsman N, Lelis A, McGarrity JM, McLean FB, Habersat D. A physical model of high temperature 4H-SiC MOSFETs Ieee Transactions On Electron Devices. 55: 2029-2040. DOI: 10.1109/Ted.2008.926665  0.661
2008 Potbhare S, Akturk A, Goldsman N, Lelis A. Effects of quantum confinement on interface trap occupation in 4H-SiC MOSFETs International Conference On Simulation of Semiconductor Processes and Devices, Sispad. 181-184. DOI: 10.1109/SISPAD.2008.4648267  0.697
2007 Potbhare S, Goldsman N, Pennington G, Lelis A, McGarrity JM. Time dependent trapping and generation-recombination of interface charges: Modeling and characterization for 4H-SiC MOSFETs Materials Science Forum. 556: 847-850. DOI: 10.4028/Www.Scientific.Net/Msf.556-557.847  0.762
2007 Pennington G, Potbhare S, Goldsman N, Habersat D, Lelis A, McGarrity J, Ashman C. Investigation of drain current saturation in 4H-SiC MOSFETs Materials Science Forum. 556: 811-814. DOI: 10.4028/Www.Scientific.Net/Msf.556-557.811  0.746
2007 Pennington G, Potbhare S, McGarrity JM, Goldsman N, Lelis A, Ashman C. Electron transport at technologically significant stepped 4H-SiC/SiO 2 interfaces International Conference On Simulation of Semiconductor Processes and Devices, Sispad. 236-239. DOI: 10.1109/SISPAD.2006.282879  0.72
2007 Potbhare S, Goldsman N, Lelis A. High temperature high field numerical modeling and experimental characterization of 4H-SiC MOSFETs 2007 International Semiconductor Device Research Symposium, Isdrs. DOI: 10.1109/ISDRS.2007.4422486  0.555
2007 Gurfinkel M, Kim J, Potbhare S, Xiong HD, Cheung KP, Suehle J, Bernstein JB, Shapira Y, Lelis AJ, Habersat D, Goldsman N. Characterization of interface and bulk oxide traps in SiC MOSFETs with epitaxialy grown and implanted channels Ieee International Integrated Reliability Workshop Final Report. 111-113. DOI: 10.1109/IRWS.2007.4469233  0.511
2007 Potbhare S, Goldsman N, Pennington G, Akturk A, Lelis A. Transient Characterization of interface traps in 4H-SiC MOSFETs 2007 International Conference On Simulation of Semiconductor Processes and Devices, Sispad 2007. 177-180.  0.801
2006 Potbhare S, Pennington G, Goldsman N, Lelis A, Habersat D, McLean FB, McGarrity JM. Using a first principles coulomb scattering mobility model for 4H-SiC MOSFET device simulation Materials Science Forum. 527: 1321-1324. DOI: 10.4028/Www.Scientific.Net/Msf.527-529.1321  0.768
2006 Pennington G, Potbhare S, Goldsman N, Habersat D, Lelis A. Determination of the temperature and field dependence of the interface conductivity mobility in 4H-SiC/SiO2 Materials Science Forum. 527: 1055-1058. DOI: 10.4028/Www.Scientific.Net/Msf.527-529.1055  0.741
2006 Lelis AJ, Potbhare S, Habersat D, Pennington G, Goldsman N. Modeling and characterization of bias stress-induced instability of SiC MOSFETs Ieee International Integrated Reliability Workshop Final Report. 160-162. DOI: 10.1109/IRWS.2006.305235  0.684
2006 Potbhare S, Goldsman N, Pennington G, Lelis A, McGarrity JM. Numerical and experimental characterization of 4H-silicon carbide lateral metal-oxide-semiconductor field-effect transistor Journal of Applied Physics. 100. DOI: 10.1063/1.2335967  0.779
2006 Potbhare S, Goldsman N, Pennington G, Lelis A, McGarrity JM. A quasi-two-dimensional depth-dependent mobility model suitable for device simulation for Coulombic scattering due to interface trapped charges Journal of Applied Physics. 100. DOI: 10.1063/1.2335673  0.749
2005 Jianzhou W, Potbhare S, Goldsman N, Lelis A. Numerical modeling and characterization of n-channel 4H-SiC double-diffused vertical power MOSFET 2005 International Semiconductor Device Research Symposium. 2005: 366-367.  0.524
2005 Potbhare S, Pennington G, Goldsman N, McGarrity JM, Lelis A. Characterization of 4H-SiC MOSFET interface trap charge density using a first principles coulomb scattering mobility model and device simulation International Conference On Simulation of Semiconductor Processes and Devices, Sispad. 2005: 95-98.  0.756
2005 Pennington G, Potbhare S, Goldsman N, McGarrity JM, Lelis A. Impact of surface steps on the roughness mobility in 4H-SiC 2005 International Semiconductor Device Research Symposium. 2005: 143-144.  0.669
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