| Year |
Citation |
Score |
| 2020 |
Tan S, Deng H, Urbanek KE, Miao Y, Zhao Z, Harris JS, Byer RL. Low-loss GaO-core/SiO-cladding planar waveguides on Si substrate. Optics Express. 28: 12475-12486. PMID 32403744 DOI: 10.1364/Oe.391036 |
0.386 |
|
| 2020 |
Miao Y, Black DS, Leedle KJ, Zhao Z, Deng H, Ceballos A, Byer RL, Harris JS, Solgaard O. Surface treatments of dielectric laser accelerators for increased laser-induced damage threshold Optics Letters. 45: 391. DOI: 10.1364/Ol.379628 |
0.349 |
|
| 2020 |
Xue M, Nazif KN, Lyu Z, Jiang J, Lu C, Lee N, Zang K, Chen Y, Zheng T, Kamins TI, Brongersma ML, Saraswat KC, Harris JS. Free-standing 2.7 μm thick ultrathin crystalline silicon solar cell with efficiency above 12.0% Nano Energy. 70: 104466. DOI: 10.1016/J.Nanoen.2020.104466 |
0.328 |
|
| 2020 |
Meng AC, Braun MR, Wang Y, Peng S, Tan W, Lentz JZ, Xue M, Pakzad A, Marshall AF, Harris JS, Cai W, McIntyre PC. Growth mode control for direct-gap core/shell Ge/GeSn nanowire light emission Materials Today. 40: 101-113. DOI: 10.1016/J.Mattod.2020.05.019 |
0.383 |
|
| 2019 |
Ding X, Zang K, Zheng T, Fei Y, Huang M, Liu X, Wang Y, Jin G, Huo Y, Harris JS, Jiang X. Improving characterization capabilities in new single-photon avalanche diode research. The Review of Scientific Instruments. 90: 043108. PMID 31043052 DOI: 10.1063/1.5041502 |
0.319 |
|
| 2019 |
Tan S, Zhao Z, Urbanek K, Hughes T, Lee YJ, Fan S, Harris JS, Byer RL. Silicon nitride waveguide as a power delivery component for on-chip dielectric laser accelerators. Optics Letters. 44: 335-338. PMID 30644894 DOI: 10.1364/Ol.44.000335 |
0.353 |
|
| 2019 |
Niedermayer U, Adelmann A, Bettoni S, Calvi M, Dehler M, Ferrari E, Frei F, Hauenstein D, Hermann B, Hiller N, Ischebeck R, Lombosi C, Prat E, Reiche S, Rivkin L, ... ... Harris J, et al. Challenges in simulating beam dynamics of dielectric laser acceleration International Journal of Modern Physics A. 34: 1942031. DOI: 10.1142/S0217751X19420314 |
0.326 |
|
| 2019 |
Sarmiento T, Zhao L, Moser P, Li T, Huo Y, Harris JS. Continuous-Wave Operation of GaAs-Based 1.5-μm GaInNAsSb VCSELs Ieee Photonics Technology Letters. 31: 1607-1610. DOI: 10.1109/Lpt.2019.2938177 |
0.395 |
|
| 2019 |
Kang Y, Deng H, Chen Y, Huo Y, Jia J, Zhao L, Zaidi Z, Zang K, Harris JS. Titanium Dioxide Hole-Blocking Layer in Ultra-Thin-Film Crystalline Silicon Solar Cells Ieee Photonics Journal. 11: 1-7. DOI: 10.1109/Jphot.2019.2947582 |
0.319 |
|
| 2019 |
Meng A, Braun M, Wang Y, Fenrich C, Xue M, Diercks D, Gorman B, Richard M, Marshall A, Cai W, Harris J, McIntyre P. Coupling of coherent misfit strain and composition distributions in core–shell Ge/Ge1-xSnx nanowire light emitters Materials Today Nano. 5: 100026. DOI: 10.1016/J.Mtnano.2019.01.001 |
0.336 |
|
| 2018 |
Zhao Z, Hughes TW, Tan S, Deng H, Sapra N, England RJ, Vuckovic J, Harris JS, Byer RL, Fan S. Design of a tapered slot waveguide dielectric laser accelerator for sub-relativistic electrons. Optics Express. 26: 22801-22815. PMID 30184935 DOI: 10.1364/Oe.26.022801 |
0.304 |
|
| 2018 |
Leedle KJ, Black DS, Miao Y, Urbanek KE, Ceballos A, Deng H, Harris JS, Solgaard O, Byer RL. Phase-dependent laser acceleration of electrons with symmetrically driven silicon dual pillar gratings. Optics Letters. 43: 2181-2184. PMID 29714784 DOI: 10.1364/Ol.43.002181 |
0.351 |
|
| 2018 |
Hughes TW, Tan S, Zhao Z, Sapra NV, Leedle KJ, Deng H, Miao Y, Black DS, Solgaard O, Harris JS, Vuckovic J, Byer RL, Fan S, England RJ, Lee YJ, et al. On-Chip Laser-Power Delivery System for Dielectric Laser Accelerators Physical Review Applied. 9. DOI: 10.1103/Physrevapplied.9.054017 |
0.351 |
|
| 2018 |
Xue M, Islam R, Chen Y, Chen J, Lu C, Mitchell Pleus A, Tae C, Xu K, Liu Y, Kamins TI, Saraswat KC, Harris JS. Carrier-selective interlayer materials for silicon solar cell contacts Journal of Applied Physics. 123: 143101. DOI: 10.1063/1.5020056 |
0.314 |
|
| 2018 |
Morea M, Zang K, Kamins TI, Brongersma ML, Harris JS. Electrically Tunable, CMOS-Compatible Metamaterial Based on Semiconductor Nanopillars Acs Photonics. 5: 4702-4709. DOI: 10.1021/Acsphotonics.8B01383 |
0.369 |
|
| 2018 |
Liu X, Zang K, Kang J, Park J, Harris JS, Kik PG, Brongersma ML. Epsilon-Near-Zero Si Slot-Waveguide Modulator Acs Photonics. 5: 4484-4490. DOI: 10.1021/Acsphotonics.8B00945 |
0.305 |
|
| 2017 |
Xue M, Islam R, Meng AC, Lyu Z, Lu CY, Tae C, Braun MR, Zang K, McIntyre PC, Kamins TI, Saraswat KC, Harris JS. Contact Selectivity Engineering in 2 μm Thick Ultrathin c-Si Solar Cell using Transition Metal Oxides Achieving Efficiency of 10.8. Acs Applied Materials & Interfaces. PMID 29124928 DOI: 10.1021/Acsami.7B12886 |
0.328 |
|
| 2017 |
Kozák M, Beck P, Deng H, McNeur J, Schönenberger N, Gaida C, Stutzki F, Gebhardt M, Limpert J, Ruehl A, Hartl I, Solgaard O, Harris JS, Byer RL, Hommelhoff P. Acceleration of sub-relativistic electrons with an evanescent optical wave at a planar interface. Optics Express. 25: 19195-19204. PMID 29041113 DOI: 10.1364/Oe.25.019195 |
0.346 |
|
| 2017 |
Zang K, Jiang X, Huo Y, Ding X, Morea M, Chen X, Lu CY, Ma J, Zhou M, Xia Z, Yu Z, Kamins TI, Zhang Q, Harris JS. Silicon single-photon avalanche diodes with nano-structured light trapping. Nature Communications. 8: 628. PMID 28931815 DOI: 10.1038/S41467-017-00733-Y |
0.341 |
|
| 2017 |
Zheng J, Wang S, Cong H, Fenrich CS, Liu Z, Xue C, Li C, Zuo Y, Cheng B, Harris JS, Wang Q. Characterization of a Ge1-x-ySiySnx/Ge1-xSnx multiple quantum well structure grown by sputtering epitaxy. Optics Letters. 42: 1608-1611. PMID 28409810 DOI: 10.1364/Ol.42.001608 |
0.4 |
|
| 2017 |
Kozák M, McNeur J, Leedle KJ, Deng H, Schönenberger N, Ruehl A, Hartl I, Harris JS, Byer RL, Hommelhoff P. Optical gating and streaking of free electrons with sub-optical cycle precision. Nature Communications. 8: 14342. PMID 28120930 DOI: 10.1038/Ncomms14342 |
0.338 |
|
| 2017 |
Chen X, Fenrich CS, Xue M, Kao M, Zang K, Lu C, Fei ET, Chen Y, Huo Y, Kamins TI, Harris JS. Tensile-strained Ge/SiGe multiple quantum well microdisks Photonics Research. 5. DOI: 10.1364/Prj.5.0000B7 |
0.391 |
|
| 2017 |
Chen Y, Kang Y, Jia J, Huo Y, Xue M, Lyu Z, Liang D, Zhao L, Harris JS. Nanostructured Dielectric Layer for Ultrathin Crystalline Silicon Solar Cells International Journal of Photoenergy. 2017: 1-6. DOI: 10.1155/2017/7153640 |
0.32 |
|
| 2017 |
Zang K, Lu C, Chen X, Fei E, Xue M, Claussen S, Morea M, Chen Y, Dutt R, Huo Y, Kamins TI, Harris JS. Germanium Quantum Well QCSE Waveguide Modulator With Tapered Coupling in Distributed Modulator–Detector System Journal of Lightwave Technology. 35: 4629-4633. DOI: 10.1109/Jlt.2017.2753582 |
0.37 |
|
| 2017 |
Murray PG, Martin IW, Craig K, Hough J, Rowan S, Bassiri R, Fejer MM, Harris JS, Lantz BT, Lin AC, Markosyan AS, Route RK. Cryogenic mechanical loss of a single-crystalline GaP coating layer for precision measurement applications Physical Review D. 95. DOI: 10.1103/Physrevd.95.042004 |
0.305 |
|
| 2017 |
Xia Z, Zang K, Liu D, Zhou M, Kim T, Zhang H, Xue M, Park J, Morea M, Ryu JH, Chang T, Kim J, Gong S, Kamins TI, Yu Z, ... ... Harris JS, et al. High-sensitivity silicon ultraviolet p+-i-n avalanche photodiode using ultra-shallow boron gradient doping Applied Physics Letters. 111: 081109. DOI: 10.1063/1.4985591 |
0.357 |
|
| 2017 |
Morea M, Brendel CE, Zang K, Suh J, Fenrich CS, Huang Y, Chung H, Huo Y, Kamins TI, Saraswat KC, Harris JS. Passivation of multiple-quantum-well Ge0.97Sn0.03/Ge p-i-n photodetectors Applied Physics Letters. 110: 091109. DOI: 10.1063/1.4977878 |
0.375 |
|
| 2017 |
Kozák M, Förster M, McNeur J, Schönenberger N, Leedle K, Deng H, Harris J, Byer R, Hommelhoff P. Dielectric laser acceleration of sub-relativistic electrons by few-cycle laser pulses Nuclear Instruments and Methods in Physics Research Section a: Accelerators, Spectrometers, Detectors and Associated Equipment. 865: 84-86. DOI: 10.1016/J.Nima.2016.12.051 |
0.328 |
|
| 2016 |
Meng AC, Fenrich CS, Braun MR, McVittie JP, Marshall AF, Harris JS, McIntyre PC. Core/Shell Germanium/Germanium-Tin Nanowires Exhibiting Room Temperature Direct- and Indirect-Gap Photoluminescence. Nano Letters. PMID 27802056 DOI: 10.1021/Acs.Nanolett.6B03316 |
0.373 |
|
| 2016 |
Kozák M, McNeur J, Leedle KJ, Deng H, Schönenberger N, Ruehl A, Hartl I, Hoogland H, Holzwarth R, Harris JS, Byer RL, Hommelhoff P. Transverse and longitudinal characterization of electron beams using interaction with optical near-fields. Optics Letters. 41: 3435-3438. PMID 27472587 DOI: 10.1364/Ol.41.003435 |
0.349 |
|
| 2016 |
Morea M, Gu K, Savikhin V, Fenrich CS, Pop E, Harris JS. Optimization of TCR and heat transport in group-IV multiple-quantum-well microbolometers Proceedings of Spie. 9974. DOI: 10.1117/12.2236166 |
0.367 |
|
| 2016 |
Liu Y, Chen Y, LaFehr DT, Su Y, Huo Y, Kang Y, Deng H, Jia J, Zhao L, Yuan M, Lyu Z, DeWitt D, Vilgalys MA, Zang K, Chen X, ... ... Harris JS, et al. Titanium oxide electron-selective layers for contact passivation of thin-film crystalline silicon solar cells Proceedings of Spie. 9749. DOI: 10.1117/12.2213540 |
0.317 |
|
| 2016 |
Yuan M, Lyu Z, Jia J, Chen Y, Liu Y, Huo Y, Miao Y, Harris J. Numerical modeling of photon recycling and luminescence coupling in non-ideal multijunction solar cell Proceedings of Spie. 9743: 974306. DOI: 10.1117/12.2213362 |
0.308 |
|
| 2016 |
Dybała F, Zelazna K, Maczko H, Gladysiewicz M, Misiewicz J, Kudrawiec R, Lin H, Chen R, Shang C, Huo Y, Kamins TI, Harris JS. Electromodulation spectroscopy of direct optical transitions in Ge1-xSnx layers under hydrostatic pressure and built-in strain Journal of Applied Physics. 119. DOI: 10.1063/1.4953220 |
0.319 |
|
| 2016 |
Shang CK, Wang V, Chen R, Gupta S, Huang YC, Pao JJ, Huo Y, Sanchez E, Kim Y, Kamins TI, Harris JS. Dry-wet digital etching of Ge1-xSnx Applied Physics Letters. 108. DOI: 10.1063/1.4941800 |
0.337 |
|
| 2015 |
Gao L, Huo Y, Zang K, Paik S, Chen Y, Harris JS, Zhou Z. On-chip plasmonic waveguide optical waveplate. Scientific Reports. 5: 15794. PMID 26507563 DOI: 10.1038/Srep15794 |
0.356 |
|
| 2015 |
Harrison SE, Collins-McIntyre LJ, Schönherr P, Vailionis A, Srot V, van Aken PA, Kellock AJ, Pushp A, Parkin SS, Harris JS, Zhou B, Chen YL, Hesjedal T. Massive Dirac Fermion Observed in Lanthanide-Doped Topological Insulator Thin Films. Scientific Reports. 5: 15767. PMID 26503435 DOI: 10.1038/Srep15767 |
0.36 |
|
| 2015 |
Leedle KJ, Ceballos A, Deng H, Solgaard O, Fabian Pease R, Byer RL, Harris JS. Dielectric laser acceleration of sub-100 keV electrons with silicon dual-pillar grating structures. Optics Letters. 40: 4344-7. PMID 26371932 DOI: 10.1364/Ol.40.004344 |
0.333 |
|
| 2015 |
Fei ET, Chen X, Zang K, Huo Y, Shambat G, Miller G, Liu X, Dutt R, Kamins TI, Vuckovic J, Harris JS. Investigation of germanium quantum-well light sources. Optics Express. 23: 22424-30. PMID 26368212 DOI: 10.1364/Oe.23.022424 |
0.401 |
|
| 2015 |
Harrison SE, Collins-McIntyre LJ, Zhang SL, Baker AA, Figueroa AI, Kellock AJ, Pushp A, Parkin SS, Harris JS, van der Laan G, Hesjedal T. Study of Dy-doped Bi2Te3: thin film growth and magnetic properties. Journal of Physics. Condensed Matter : An Institute of Physics Journal. 27: 245602. PMID 26000785 DOI: 10.1088/0953-8984/27/24/245602 |
0.324 |
|
| 2015 |
Lin AC, Bassiri R, Omar S, Markosyan AS, Lantz B, Route R, Byer RL, Harris JS, Fejer MM. Epitaxial growth of GaP/AlGaP mirrors on Si for low thermal noise optical coatings Optical Materials Express. 5: 1890-1897. DOI: 10.1364/Ome.5.001890 |
0.361 |
|
| 2015 |
Kang Y, Liang D, Mehra S, Huo Y, Chen Y, Christoforo MG, Salleo A, Harris JS. Efficiency enhancement of gallium arsenide photovoltaics using solution-processed zinc oxide nanoparticle light scattering layers Journal of Nanomaterials. 2015. DOI: 10.1155/2015/263734 |
0.305 |
|
| 2015 |
Shang CK, Chen R, Gupta S, Huang YC, Huo Y, Sanchez E, Kim Y, Kamins TI, Saraswat KC, Harris JS. Strained germanium-tin multiple quantum well microdisk resonators towards a light source on silicon Proceedings of Spie - the International Society For Optical Engineering. 9367. DOI: 10.1117/12.2080146 |
0.359 |
|
| 2015 |
Harrison SE, Collins-McIntyre LJ, Zhang SL, Baker AA, Figueroa AI, Kellock AJ, Pushp A, Chen YL, Parkin SSP, Harris JS, Van Der Laan G, Hesjedal T. Study of Ho-doped Bi2Te3 topological insulator thin films Applied Physics Letters. 107. DOI: 10.1063/1.4935235 |
0.309 |
|
| 2014 |
Baranowski M, Kudrawiec R, Syperek M, Misiewicz J, Sarmiento T, Harris JS. Time-resolved photoluminescence studies of annealed 1.3-μm GaInNAsSb quantum wells. Nanoscale Research Letters. 9: 81. PMID 24533740 DOI: 10.1186/1556-276X-9-81 |
0.347 |
|
| 2014 |
Chen R, Gupta S, Huang YC, Huo Y, Rudy CW, Sanchez E, Kim Y, Kamins TI, Saraswat KC, Harris JS. Demonstration of a Ge/GeSn/Ge quantum-well microdisk resonator on silicon: enabling high-quality Ge(Sn) materials for micro- and nanophotonics. Nano Letters. 14: 37-43. PMID 24299070 DOI: 10.1021/Nl402815V |
0.416 |
|
| 2014 |
Virwani K, Harrison SE, Pushp A, Topuria T, Delenia E, Rice P, Kellock A, Collins-McIntyre L, Harris J, Hesjedal T, Parkin S. Controlled removal of amorphous Se capping layer from a topological insulator Applied Physics Letters. 105. DOI: 10.1063/1.4904803 |
0.319 |
|
| 2014 |
Harrison SE, Schönherr P, Huo Y, Harris JS, Hesjedal T. Catalyst-free growth of Bi2Te3 nanostructures by molecular beam epitaxy Applied Physics Letters. 105. DOI: 10.1063/1.4898816 |
0.339 |
|
| 2014 |
Harrison SE, Zhou B, Huo Y, Pushp A, Kellock AJ, Parkin SSP, Harris JS, Chen Y, Hesjedal T. Preparation of layered thin film samples for angle-resolved photoemission spectroscopy Applied Physics Letters. 105. DOI: 10.1063/1.4896632 |
0.314 |
|
| 2014 |
Harrison SE, Collins-Mcintyre LJ, Li S, Baker AA, Shelford LR, Huo Y, Pushp A, Parkin SSP, Harris JS, Arenholz E, Van Der Laan G, Hesjedal T. Study of Gd-doped Bi2Te3 thin films: Molecular beam epitaxy growth and magnetic properties Journal of Applied Physics. 115. DOI: 10.1063/1.4861615 |
0.346 |
|
| 2014 |
Huang KCY, Seo MK, Sarmiento T, Huo Y, Harris JS, Brongersma ML. Electrically driven subwavelength optical nanocircuits Nature Photonics. 8: 244-249. DOI: 10.1038/Nphoton.2014.2 |
0.345 |
|
| 2014 |
Cho S, Park J, Kim H, Sinclair R, Park B, Harris JS. Effects of germanium incorporation on optical performances of silicon germanium passive devices for group-IV photonic integrated circuits Photonics and Nanostructures - Fundamentals and Applications. 12: 54-68. DOI: 10.1016/J.Photonics.2013.07.012 |
0.346 |
|
| 2013 |
Liang D, Kang Y, Huo Y, Chen Y, Cui Y, Harris JS. High-efficiency nanostructured window GaAs solar cells. Nano Letters. 13: 4850-6. PMID 24021024 DOI: 10.1021/Nl402680G |
0.348 |
|
| 2013 |
O'Sullivan TD, Heitz RT, Parashurama N, Barkin DB, Wooley BA, Gambhir SS, Harris JS, Levi O. Real-time, continuous, fluorescence sensing in a freely-moving subject with an implanted hybrid VCSEL/CMOS biosensor. Biomedical Optics Express. 4: 1332-41. PMID 24009996 DOI: 10.1364/Boe.4.001332 |
0.674 |
|
| 2013 |
Pavarelli N, Ochalski TJ, Murphy-Armando F, Huo Y, Schmidt M, Huyet G, Harris JS. Optical emission of a strained direct-band-gap Ge quantum well embedded inside InGaAs alloy layers. Physical Review Letters. 110: 177404. PMID 23679775 DOI: 10.1103/Physrevlett.110.177404 |
0.396 |
|
| 2013 |
Schwede JW, Sarmiento T, Narasimhan VK, Rosenthal SJ, Riley DC, Schmitt F, Bargatin I, Sahasrabuddhe K, Howe RT, Harris JS, Melosh NA, Shen ZX. Photon-enhanced thermionic emission from heterostructures with low interface recombination. Nature Communications. 4: 1576. PMID 23481384 DOI: 10.1038/Ncomms2577 |
0.318 |
|
| 2013 |
Edwards EH, Lever L, Fei ET, Kamins TI, Ikonic Z, Harris JS, Kelsall RW, Miller DA. Low-voltage broad-band electroabsorption from thin Ge/SiGe quantum wells epitaxially grown on silicon. Optics Express. 21: 867-76. PMID 23388980 DOI: 10.1364/Oe.21.000867 |
0.405 |
|
| 2013 |
Baranowski M, Kudrawiec R, Latkowska M, Syperek M, Misiewicz J, Sarmiento T, Harris JS. Enhancement of photoluminescence from GaInNAsSb quantum wells upon annealing: improvement of material quality and carrier collection by the quantum well. Journal of Physics. Condensed Matter : An Institute of Physics Journal. 25: 065801. PMID 23306016 DOI: 10.1088/0953-8984/25/6/065801 |
0.413 |
|
| 2013 |
Cho S, Kim H, Yoo SJB, Park B, Harris JS. Design optimization of an optically drivable heterogeneous MOSFET with silicon compatibility Proceedings of Spie. 8619. DOI: 10.1117/12.2005813 |
0.339 |
|
| 2013 |
Leedle K, Janjua A, Paik S, Schnitzer MJ, Harris JS. Towards a photonic crystal mode-locked laser Proceedings of Spie - the International Society For Optical Engineering. 8640. DOI: 10.1117/12.2005418 |
0.393 |
|
| 2013 |
Parameshwaran V, Xu X, Kang Y, Harris J, Wong H-P, Clemens B. Dilute phosphide nitride materials as photocathodes for electrochemical solar energy conversion Proceedings of Spie. 8620. DOI: 10.1117/12.2003486 |
0.341 |
|
| 2013 |
Dutt B, Lin H, Sukhdeo DS, Vulovic BM, Gupta S, Nam D, Saraswat KC, Harris JS. Theoretical analysis of GeSn alloys as a gain medium for a Si-compatible laser Ieee Journal On Selected Topics in Quantum Electronics. 19. DOI: 10.1109/Jstqe.2013.2241397 |
0.377 |
|
| 2013 |
Audet RM, Edwards EH, Balram KC, Claussen SA, Schaevitz RK, Tasyurek E, Rong Y, Fei EI, Kamins TI, Harris JS, Miller DAB. Surface-Normal Ge/SiGe Asymmetric Fabry–Perot Optical Modulators Fabricated on Silicon Substrates Journal of Lightwave Technology. 31: 3995-4003. DOI: 10.1109/Jlt.2013.2279174 |
0.38 |
|
| 2013 |
Gupta S, Chen R, Harris JS, Saraswat KC. Atomic layer deposition of Al2O3 on germanium-tin (GeSn) and impact of wet chemical surface pre-treatment Applied Physics Letters. 103. DOI: 10.1063/1.4850518 |
0.328 |
|
| 2013 |
Lastras-Martínez LF, Herrera-Jasso R, Ulloa-Castillo NA, Balderas-Navarro RE, Lastras-Martínez A, Lin AC, Fejer MM, Harris JS. Optical characterization of orientation-patterned GaP structures by micro reflectance difference spectroscopy Journal of Applied Physics. 114. DOI: 10.1063/1.4828737 |
0.339 |
|
| 2013 |
Li S, Harrison SE, Huo Y, Pushp A, Yuan HT, Zhou B, Kellock AJ, Parkin SSP, Chen YL, Hesjedal T, Harris JS. Magnetic properties of gadolinium substituted Bi2Te3 thin films Applied Physics Letters. 102. DOI: 10.1063/1.4812292 |
0.321 |
|
| 2013 |
Harrison SE, Li S, Huo Y, Zhou B, Chen YL, Harris JS. Two-step growth of high quality Bi2Te3 thin films on Al2O3 (0001) by molecular beam epitaxy Applied Physics Letters. 102. DOI: 10.1063/1.4803717 |
0.369 |
|
| 2013 |
Chen R, Huang YC, Gupta S, Lin AC, Sanchez E, Kim Y, Saraswat KC, Kamins TI, Harris JS. Material characterization of high Sn-content, compressively-strained GeSn epitaxial films after rapid thermal processing Journal of Crystal Growth. 365: 29-34. DOI: 10.1016/J.Jcrysgro.2012.12.014 |
0.345 |
|
| 2013 |
Lin AC, Fejer MM, Harris JS. Antiphase domain annihilation during growth of GaP on Si by molecular beam epitaxy Journal of Crystal Growth. 363: 258-263. DOI: 10.1016/J.Jcrysgro.2012.10.055 |
0.318 |
|
| 2012 |
Edwards EH, Audet RM, Fei ET, Claussen SA, Schaevitz RK, Tasyurek E, Rong Y, Kamins TI, Harris JS, Miller DA. Ge/SiGe asymmetric Fabry-Perot quantum well electroabsorption modulators. Optics Express. 20: 29164-73. PMID 23388742 DOI: 10.1364/Oe.20.029164 |
0.39 |
|
| 2012 |
Parashurama N, O'Sullivan TD, De La Zerda A, El Kalassi P, Cho S, Liu H, Teed R, Levy H, Rosenberg J, Cheng Z, Levi O, Harris JS, Gambhir SS. Continuous sensing of tumor-targeted molecular probes with a vertical cavity surface emitting laser-based biosensor. Journal of Biomedical Optics. 17: 117004. PMID 23123976 DOI: 10.1117/1.Jbo.17.11.117004 |
0.678 |
|
| 2012 |
Wang L, Mathieson K, Kamins TI, Loudin JD, Galambos L, Goetz G, Sher A, Mandel Y, Huie P, Lavinsky D, Harris JS, Palanker DV. Photovoltaic retinal prosthesis: implant fabrication and performance. Journal of Neural Engineering. 9: 046014. PMID 22791690 DOI: 10.1088/1741-2560/9/4/046014 |
0.307 |
|
| 2012 |
Cho S, Park BG, Yang C, Cheung S, Yoon E, Kamins TI, Yoo SJ, Harris JS. Room-temperature electroluminescence from germanium in an Al(0.3)Ga(0.7)As/Ge heterojunction light-emitting diode by Γ-valley transport. Optics Express. 20: 14921-7. PMID 22772186 DOI: 10.1364/Oe.20.014921 |
0.355 |
|
| 2012 |
Lodenkamper R, Bortz ML, Fejer MM, Bacher K, Harris JS. Surface-emitting second-harmonic generation in a semiconductor vertical resonator. Optics Letters. 18: 1798-800. PMID 19829408 DOI: 10.1364/Ol.18.001798 |
0.313 |
|
| 2012 |
Aldaz R, Wiemer M, Miller D, Harris J. Monolithically-integrated long vertical cavity surface emitting laser incorporating a concave micromirror on a glass substrate. Optics Express. 12: 3967-71. PMID 19483933 DOI: 10.1364/opex.12.003967 |
0.81 |
|
| 2012 |
Claussen SA, Balram KC, Fei ET, Kamins TI, Harris JS, Miller DAB. Selective area growth of germanium and germanium/silicon-germanium quantum wells in silicon waveguides for on-chip optical interconnect applications Optical Materials Express. 2: 1336-1342. DOI: 10.1364/Ome.2.001336 |
0.383 |
|
| 2012 |
Liang D, Kang Y, Huo Y, Wang KX, Gu A, Tan M, Yu Z, Li S, Jia J, Bao X, Wang S, Yao Y, Fan S, Cui Y, Harris J. GaAs thin film nanostructure arrays for III-V solar cell applications Proceedings of Spie. 8269. DOI: 10.1117/12.909743 |
0.336 |
|
| 2012 |
Shambat G, Ellis B, Mayer M, Majumdar A, Petykiewicz J, Sarmiento T, Harris J, Haller EE, Vuckovic J. Electrically driven photonic crystal nanocavity lasers, LEDs, and modulators Proceedings of Spie - the International Society For Optical Engineering. 8277. DOI: 10.1117/12.907432 |
0.376 |
|
| 2012 |
Ren S, Rong Y, Claussen SA, Schaevitz RK, Kamins TI, Harris JS, Miller DAB. Ge/SiGe Quantum Well Waveguide Modulator Monolithically Integrated With SOI Waveguides Ieee Photonics Technology Letters. 24: 461-463. DOI: 10.1109/Lpt.2011.2181496 |
0.388 |
|
| 2012 |
Shambat G, Ellis B, Petykiewicz J, Majumdar A, Mayer M, Sarmiento T, Harris J, Haller E, Vučković J. Electrically driven photonic crystal nanocavity devices Integrated Photonics Research, Silicon and Nanophotonics, Iprsn 2012. DOI: 10.1109/Jstqe.2012.2193666 |
0.302 |
|
| 2012 |
Schaevitz RK, Edwards EH, Roth JE, Fei ET, Rong Y, Wahl P, Kamins TI, Harris JS, Miller DAB. Simple electroabsorption calculator for designing 1310 nm and 1550 nm modulators using germanium quantum wells Ieee Journal of Quantum Electronics. 48: 187-197. DOI: 10.1109/Jqe.2011.2170961 |
0.359 |
|
| 2012 |
Lin H, Chen R, Lu W, Huo Y, Kamins TI, Harris JS. Structural and optical characterization of SixGe1−x−ySny alloys grown by molecular beam epitaxy Applied Physics Letters. 100: 141908. DOI: 10.1063/1.3701732 |
0.34 |
|
| 2012 |
Lin H, Chen R, Lu W, Huo Y, Kamins TI, Harris JS. Investigation of the direct band gaps in Ge1−xSnx alloys with strain control by photoreflectance spectroscopy Applied Physics Letters. 100: 102109. DOI: 10.1063/1.3692735 |
0.312 |
|
| 2012 |
Lin H, Chen R, Huo Y, Kamins TI, Harris JS. Low-temperature growth of Ge1−xSnx thin films with strain control by molecular beam epitaxy Thin Solid Films. 520: 3927-3930. DOI: 10.1016/J.Tsf.2012.01.047 |
0.316 |
|
| 2012 |
Tassev V, Snure M, Peterson R, Bedford R, Bliss D, Bryant G, Mann M, Goodhue W, Vangala S, Termkoa K, Lin A, Harris JS, Fejer MM, Yapp C, Tetlak S. Epitaxial growth of quasi-phase matched GaP for nonlinear applications: Systematic process improvements Journal of Crystal Growth. 352: 72-77. DOI: 10.1016/J.Jcrysgro.2011.12.077 |
0.336 |
|
| 2012 |
Rong Y, Huo Y, Fei ET, Fiorentino M, Tan MRT, Ochalski T, Huyet G, Thylen L, Chacinski M, Kamins TI, Harris JS. High speed optical modulation in Ge quantum wells using quantum confined stark effect Frontiers of Optoelectronics. 5: 82-89. DOI: 10.1007/S12200-012-0194-9 |
0.435 |
|
| 2012 |
Huo Y, Lin H, Chen R, Rong Y, Kamins TI, Harris JS. MBE growth of tensile-strained Ge quantum wells and quantum dots Frontiers of Optoelectronics. 5: 112-116. DOI: 10.1007/S12200-012-0193-X |
0.41 |
|
| 2012 |
Liang D, Huo Y, Kang Y, Wang KX, Gu A, Tan M, Yu Z, Li S, Jia J, Bao X, Wang S, Yao Y, Wong HP, Fan S, Cui Y, ... Harris JS, et al. Optical Absorption Enhancement: Optical Absorption Enhancement in Freestanding GaAs Thin Film Nanopyramid Arrays (Adv. Energy Mater. 10/2012) Advanced Energy Materials. 2: 1150-1150. DOI: 10.1002/Aenm.201290050 |
0.311 |
|
| 2012 |
Liang D, Huo Y, Kang Y, Wang KX, Gu A, Tan M, Yu Z, Li S, Jia J, Bao X, Wang S, Yao Y, Wong HP, Fan S, Cui Y, ... Harris JS, et al. Optical Absorption Enhancement in Freestanding GaAs Thin Film Nanopyramid Arrays Advanced Energy Materials. 2: 1254-1260. DOI: 10.1002/Aenm.201200022 |
0.377 |
|
| 2011 |
Shambat G, Ellis B, Majumdar A, Petykiewicz J, Mayer MA, Sarmiento T, Harris J, Haller EE, Vučković J. Ultrafast direct modulation of a single-mode photonic crystal nanocavity light-emitting diode. Nature Communications. 2: 539. PMID 22086339 DOI: 10.1038/Ncomms1543 |
0.367 |
|
| 2011 |
Hanrahan O, Harris J, Egan C. Advanced microscopy: laser scanning confocal microscopy. Methods of Molecular Biology. 784: 169-180. PMID 21898220 DOI: 10.1007/978-1-61779-289-2_12 |
0.301 |
|
| 2011 |
Ueda T, Yuri M, Harris JS. Effects of Growth Temperatures on Crystal Quality of GaN by Vapor Phase Epitaxy Using GaCl$_{3}$ and NH$_{3}$ Japanese Journal of Applied Physics. 50: 85501. DOI: 10.1143/Jjap.50.085501 |
0.369 |
|
| 2011 |
Ellis B, Shambat G, Mayer M, Petykiewicz J, Sarmiento T, Harris J, Haller E, Vuckovic J. Low power consumption electrically pumped photonic crystal membrane devices Proceedings of Spie - the International Society For Optical Engineering. 8095. DOI: 10.1117/12.894479 |
0.364 |
|
| 2011 |
Lee MM, O'Sullivan TD, Cerruto A, Liu V, Zhang J, Levi O, Lee H, Brueck SRJ, Fan S, Harris JS. Integrated photonic structures for parallel fluorescence and refractive index biosensing Proceedings of Spie. 8034: 803406. DOI: 10.1117/12.884228 |
0.689 |
|
| 2011 |
Lin AC, Harris JS, Fejer MM. Two-dimensional III-V nucleation on Si for nonlinear optics Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena. 29: 03C120. DOI: 10.1116/1.3562191 |
0.327 |
|
| 2011 |
Cho S, Chen R, Koo S, Shambat G, Lin H, Park N, Vuckovic J, Kamins TI, Park B, Harris JS. Fabrication and Analysis of Epitaxially Grown Ge$_{1-x}$Sn$_x$ Microdisk Resonator With 20-nm Free-Spectral Range Ieee Photonics Technology Letters. 23: 1535-1537. DOI: 10.1109/Lpt.2011.2163929 |
0.373 |
|
| 2011 |
Cho S, Kang IM, Kamins TI, Park B, Harris JS. Silicon-compatible compound semiconductor tunneling field-effect transistor for high performance and low standby power operation Applied Physics Letters. 99: 243505. DOI: 10.1063/1.3670325 |
0.348 |
|
| 2011 |
Shambat G, Provine J, Rivoire K, Sarmiento T, Harris J, Vučković J. Optical fiber tips functionalized with semiconductor photonic crystal cavities Applied Physics Letters. 99: 191102. DOI: 10.1063/1.3660278 |
0.313 |
|
| 2011 |
Chen R, Lin H, Huo Y, Hitzman C, Kamins TI, Harris JS. Increased photoluminescence of strain-reduced, high-Sn composition Ge1−xSnx alloys grown by molecular beam epitaxy Applied Physics Letters. 99: 181125. DOI: 10.1063/1.3658632 |
0.328 |
|
| 2011 |
Shambat G, Ellis B, Petykiewicz J, Mayer MA, Sarmiento T, Harris J, Haller EE, Vukovi J. Nanobeam photonic crystal cavity light-emitting diodes Applied Physics Letters. 99. DOI: 10.1063/1.3625432 |
0.394 |
|
| 2011 |
Ren S, Rong Y, Kamins TI, Harris JS, Miller DAB. Selective epitaxial growth of Ge/Si0.15Ge0.85 quantum wells on Si substrate using reduced pressure chemical vapor deposition Applied Physics Letters. 98: 151108. DOI: 10.1063/1.3574912 |
0.398 |
|
| 2011 |
Huo Y, Lin H, Chen R, Makarova M, Rong Y, Li M, Kamins TI, Vuckovic J, Harris JS. Strong enhancement of direct transition photoluminescence with highly tensile-strained Ge grown by molecular beam epitaxy Applied Physics Letters. 98: 011111. DOI: 10.1063/1.3534785 |
0.34 |
|
| 2011 |
Ellis B, Mayer MA, Shambat G, Sarmiento T, Harris J, Haller EE, Vučković J. Ultralow-threshold electrically pumped quantum-dot photonic-crystal nanocavity laser Nature Photonics. 5: 297-300. DOI: 10.1038/Nphoton.2011.51 |
0.402 |
|
| 2011 |
Tan KH, Wicaksono S, Loke WK, Li D, Yoon SF, Fitzgerald EA, Ringel SA, Harris JS. Molecular beam epitaxy grown GaNAsSb 1 eV photovoltaic cell Journal of Crystal Growth. 335: 66-69. DOI: 10.1016/J.Jcrysgro.2011.09.023 |
0.361 |
|
| 2011 |
Lin H, Huo Y, Rong Y, Chen R, Kamins TI, Harris JS. X-ray diffraction analysis of step-graded InxGa1−xAs buffer layers grown by molecular beam epitaxy Journal of Crystal Growth. 323: 17-20. DOI: 10.1016/J.Jcrysgro.2010.11.173 |
0.331 |
|
| 2010 |
Gong Y, Ellis B, Shambat G, Sarmiento T, Harris JS, Vuckovic J. Nanobeam photonic crystal cavity quantum dot laser. Optics Express. 18: 8781-9. PMID 20588722 DOI: 10.1364/Oe.18.008781 |
0.415 |
|
| 2010 |
O'Sullivan T, Munro EA, Parashurama N, Conca C, Gambhir SS, Harris JS, Levi O. Implantable semiconductor biosensor for continuous in vivo sensing of far-red fluorescent molecules. Optics Express. 18: 12513-25. PMID 20588377 DOI: 10.1364/Oe.18.012513 |
0.672 |
|
| 2010 |
Edwards EH, Audet RM, Rong Y, Claussen SA, Schaevitz RK, Taşyürek E, Ren S, Kamins TI, Harris JS, Miller DAB, Dosunmu OI, Ünlü MS. Si-Ge surface-normal asymmetric Fabry-Perot quantum-confined stark effect electroabsorption modulator 2010 23rd Annual Meeting of the Ieee Photonics Society, Photinics 2010. 514-515. DOI: 10.1109/Photonics.2010.5698987 |
0.38 |
|
| 2010 |
Harris JS, O'sullivan T, Sarmiento T, Lee MM, Vo S. Emerging applications for vertical cavity surface emitting lasers Semiconductor Science and Technology. 26: 014010. DOI: 10.1088/0268-1242/26/1/014010 |
0.728 |
|
| 2010 |
Ellis B, Sarmiento T, Mayer M, Zhang B, Harris J, Haller E, Vuckovic J. Electrically pumped photonic crystal nanocavity light sources using a laterally doped p-i-n junction Applied Physics Letters. 96. DOI: 10.1063/1.3425663 |
0.358 |
|
| 2010 |
Kudrawiec R, Sarmiento T, Poloczek P, Misiewicz J, Harris JS. Photoreflectance and photoluminescence study of GaInNAsSb layers lattice matched to InP Journal of Applied Physics. 107: 043523. DOI: 10.1063/1.3280030 |
0.366 |
|
| 2009 |
O'Sullivan TD, Munro E, Zerda ADL, Parashurama N, Teed R, Walls Z, Levi O, Gambhir SS, Harris JS. Implantable optical biosensor for in vivo molecular imaging Progress in Biomedical Optics and Imaging - Proceedings of Spie. 7173. DOI: 10.1117/12.811227 |
0.301 |
|
| 2009 |
Chen R, Fu J, Miller D, Harris JS. Design and Analysis of CMOS-Controlled Tunable Photodetectors for Multiwavelength Discrimination Journal of Lightwave Technology. 27: 5451-5460. DOI: 10.1109/Jlt.2009.2032248 |
0.302 |
|
| 2009 |
Mintairov AM, Sun K, Merz JL, Yuen H, Bank S, Wistey M, Harris JS, Peake G, Egorov A, Ustinov V, Kudrawiec R, Misiewicz J. Atomic arrangement and emission properties of GaAs(In, Sb)N quantum wells Semiconductor Science and Technology. 24. DOI: 10.1088/0268-1242/24/7/075013 |
0.755 |
|
| 2009 |
Ferguson J, Smowton PM, Blood P, Bae H, Sarmiento T, Harris J. Nonradiative recombination in 1.56 μm GaInNAsSb/GaNAs quantum-well lasers Applied Physics Letters. 95: 231104. DOI: 10.1063/1.3271182 |
0.411 |
|
| 2009 |
Kudrawiec R, Poloczek P, Misiewicz J, Bae HP, Sarmiento T, Bank SR, Yuen HB, Wistey MA, Harris JS. Contactless electroreflectance of GaInNAsSb/GaNAs/GaAs quantum wells emitting at 1.5-1.65 μm: Broadening of the fundamental transition Applied Physics Letters. 94. DOI: 10.1063/1.3073718 |
0.773 |
|
| 2009 |
Sarmiento T, Bae H, O'Sullivan T, Harris J. GaAs-based 1.53 [micro sign]m GaInNAsSb vertical cavity surface emitting lasers Electronics Letters. 45: 978. DOI: 10.1049/El.2009.1626 |
0.42 |
|
| 2009 |
Choi D, Harris JS, Kim E, McIntyre PC, Cagnon J, Stemmer S. High-quality III–V semiconductor MBE growth on Ge/Si virtual substrates for metal-oxide-semiconductor device fabrication Journal of Crystal Growth. 311: 1962-1971. DOI: 10.1016/J.Jcrysgro.2008.09.138 |
0.733 |
|
| 2008 |
Rao Z, Vo S, Harris JS. A review of progress on nano-aperture VCSEL Chinese Optics Letters. 6: 748-754. DOI: 10.3788/Col20080610.0748 |
0.34 |
|
| 2008 |
Kanner GS, Marable ML, Singh NB, Berghmans A, Kahler D, Wagner B, Lin A, Fejer MM, Harris JS, Schepler KL. Optical probes of orientation-patterned ZnSe quasi-phase-matched devices Proceedings of Spie. 6875. DOI: 10.1117/12.768553 |
0.329 |
|
| 2008 |
Schaar JE, Vodopyanov KL, Kuo PS, Fejer MM, Yu X, Lin A, Harris JS, Bliss D, Lynch C, Kozlov VG, Hurlbut W. Terahertz Sources Based on Intracavity Parametric Down-Conversion in Quasi-Phase-Matched Gallium Arsenide Ieee Journal of Selected Topics in Quantum Electronics. 14: 354-362. DOI: 10.1109/Jstqe.2008.917957 |
0.344 |
|
| 2008 |
Shin B, Choi D, Harris JS, McIntyre PC. Pre-atomic layer deposition surface cleaning and chemical passivation of (100) In0.2Ga0.8As and deposition of ultrathin Al2O3 gate insulators Applied Physics Letters. 93: 052911. DOI: 10.1063/1.2966357 |
0.678 |
|
| 2008 |
Kudrawiec R, Yuen HB, Bank SR, Bae HP, Wistey MA, Harris JS, Motyka M, Misiewicz J. On the Fermi level pinning in as-grown GaInNAs(Sb)/GaAs quantum wells with indium content of 8%-32% Journal of Applied Physics. 104. DOI: 10.1063/1.2961330 |
0.754 |
|
| 2008 |
Choi D, Kim E, McIntyre PC, Harris JS. Molecular-beam epitaxial growth of III–V semiconductors on Ge∕Si for metal-oxide-semiconductor device fabrication Applied Physics Letters. 92: 203502. DOI: 10.1063/1.2929386 |
0.723 |
|
| 2008 |
Pan J, Huo Y, Yamanaka K, Sandhu S, Scaccabarozzi L, Timp R, Povinelli ML, Fan S, Fejer MM, Harris JS. Aligning microcavity resonances in silicon photonic-crystal slabs using laser-pumped thermal tuning Applied Physics Letters. 92. DOI: 10.1063/1.2896615 |
0.722 |
|
| 2008 |
Roth JE, Fidaner O, Edwards EH, Schaevitz RK, Kuo YH, Helman NC, Kamins TI, Harris JS, Miller DAB. C-band side-entry Ge quantum-well electroabsorption modulator on SOI operating at 1V swing Electronics Letters. 44: 49-50. DOI: 10.1049/El:20082979 |
0.399 |
|
| 2008 |
Lynch C, Bliss D, Zens T, Lin A, Harris J, Kuo P, Fejer M. Growth of mm-thick orientation-patterned GaAs for IR and THZ generation Journal of Crystal Growth. 310: 5241-5247. DOI: 10.1016/J.Jcrysgro.2008.08.050 |
0.319 |
|
| 2008 |
Choi D, Ge Y, Harris JS, Cagnon J, Stemmer S. Low surface roughness and threading dislocation density Ge growth on Si (0 0 1) Journal of Crystal Growth. 310: 4273-4279. DOI: 10.1016/J.Jcrysgro.2008.07.029 |
0.706 |
|
| 2008 |
Kim S, Yuen H, Hatami F, Chin A, Harris J. Optical Properties of Dilute Nitride InN(As)Sb Quantum Wells and Quantum Dots Grown by Molecular Beam Epitaxy Journal of Electronic Materials. 37: 1774-1779. DOI: 10.1007/S11664-008-0472-X |
0.784 |
|
| 2008 |
Kudrawiec R, Yuen HB, Bank SR, Bae HP, Wistey MA, Harris JS, Motyka M, Gladysiewicz M, Misiewicz J. The Fermi level position in as-grown GaInNAs(Sb) quantum wells and layers studied by contactless electroreflectance Physica Status Solidi (C) Current Topics in Solid State Physics. 5: 473-477. DOI: 10.1002/Pssc.200777468 |
0.744 |
|
| 2007 |
Rao Z, Hesselink L, Harris JS. High transmission through ridge nano-apertures on Vertical-Cavity Surface-Emitting Lasers. Optics Express. 15: 10427-38. PMID 19547395 DOI: 10.1364/Oe.15.010427 |
0.357 |
|
| 2007 |
Roth JE, Fidaner O, Schaevitz RK, Kuo YH, Kamins TI, Harris JS, Miller DA. Optical modulator on silicon employing germanium quantum wells. Optics Express. 15: 5851-9. PMID 19532843 DOI: 10.1364/Oe.15.005851 |
0.403 |
|
| 2007 |
Rao Z, Hesselink L, Harris JS. High-intensity bowtie-shaped nano-aperture vertical-cavity surface-emitting laser for near-field optics. Optics Letters. 32: 1995-7. PMID 17632621 DOI: 10.1364/Ol.32.001995 |
0.354 |
|
| 2007 |
Choi D, Warusawithana M, Chui CO, Chen J, Tsai W, Schlom DG, Harris JS. The Electrical Characterization of Molecular-Beam-Deposited LaAlO3 on GaAs and its Annealing Effects Mrs Proceedings. 996. DOI: 10.1557/PROC-0996-H05-31 |
0.442 |
|
| 2007 |
Choi D, Warusawithana M, Chui CO, Chen J, Tsai W, Schlom DG, Harris JS. The electrical characterization of molecular-beam-deposited LaA10 3 on gaas and its annealing effects Materials Research Society Symposium Proceedings. 996: 127-132. DOI: 10.1557/Proc-0996-H05-31 |
0.747 |
|
| 2007 |
Pickett E, Bank S, Yuen H, Bae H, Sarmiento T, Marshall A, Harris J. Thermally Induced Relaxation in GaInNAsSb Quantum Well Structures Mrs Proceedings. 994. DOI: 10.1557/Proc-0994-F05-02 |
0.611 |
|
| 2007 |
Kuo PS, Vodopyanov KL, Schaar JE, Yu X, Lin AC, Fejer MM, Harris JS, Bliss DF, Lynch CL, Zens T. Advances in Structured Nonlinear Semiconductor Crystals Frontiers in Optics. DOI: 10.1364/Fio.2007.Swc2 |
0.3 |
|
| 2007 |
Roth JE, Fidaner O, Schaevitz RK, Edwards EH, Kuo Y, Kamins TI, Harris JS, Miller DAB. Optical Modulator on Si Employing Ge Quantum Wells Frontiers in Optics. DOI: 10.1364/Fio.2007.Ftum1 |
0.388 |
|
| 2007 |
Fidaner O, Okyay AK, Roth JE, Kuo Y, Saraswat KC, Harris JS, Miller DAB. Waveguide Electroabsorption Modulator on Si Employing Ge/SiGe Quantum Wells Frontiers in Optics. DOI: 10.1364/Fio.2007.Fmc2 |
0.379 |
|
| 2007 |
HARRIS JS. (GaIn)(NAsSb): MBE GROWTH, HETEROSTRUCTURE AND NANOPHOTONIC DEVICES International Journal of Nanoscience. 6: 269-274. DOI: 10.1142/S0219581X07004699 |
0.436 |
|
| 2007 |
Levi O, Lee MM, Zhang J, Lousse V, Brueck SRJ, Fan S, Harris JS. Sensitivity analysis of a photonic crystal structure for index-of-refraction sensing Progress in Biomedical Optics and Imaging - Proceedings of Spie. 6447. DOI: 10.1117/12.705670 |
0.313 |
|
| 2007 |
Vodopyanov KL, Schaar JE, Kuo PS, Fejer MM, Yu X, Harris JS, Kozlov VG, Bliss DF, Lynch C. Terahertz wave generation in orientation-patterned GaAs using resonantly enhanced schemes Proceedings of Spie. 6455: 645509. DOI: 10.1117/12.702302 |
0.344 |
|
| 2007 |
Oye MM, Shahrjerdi D, Ok I, Hurst JB, Lewis SD, Dey S, Kelly DQ, Joshi S, Mattord TJ, Yu X, Wistey MA, Harris JS, Holmes AL, Lee JC, Banerjee SK. Molecular-beam epitaxy growth of device-compatible GaAs on silicon substrates with thin (∼80 nm) Si1-x Gex step-graded buffer layers for high- κ III-V metal-oxide-semiconductor field effect transistor applications Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 25: 1098-1102. DOI: 10.1116/1.2713119 |
0.687 |
|
| 2007 |
Fidaner O, Okyay AK, Roth JE, Schaevitz RK, Kuo YH, Saraswat KC, Harris JS, Miller DAB. Ge-SiGe quantum-well waveguide photodetectors on silicon for the near-infrared Ieee Photonics Technology Letters. 19: 1631-1633. DOI: 10.1109/Lpt.2007.904929 |
0.42 |
|
| 2007 |
Kudrawiec R, Yuen HB, Bank SR, Bae HP, Wistey MA, Harris JS, Motyka M, Misiewicz J. Contactless electroreflectance approach to study the Fermi level position in GaInNAs/GaAs quantum wells Journal of Applied Physics. 102. DOI: 10.1063/1.2817258 |
0.756 |
|
| 2007 |
Oye MM, Mattord TJ, Hallock GA, Bank SR, Wistey MA, Reifsnider JM, Ptak AJ, Yuen HB, Harris JS, Holmes AL. Effects of different plasma species (atomic N, metastable N 2 *, and ions) on the optical properties of dilute nitride materials grown by plasma-assisted molecular-beam epitaxy Applied Physics Letters. 91. DOI: 10.1063/1.2806226 |
0.786 |
|
| 2007 |
Goel N, Majhi P, Tsai W, Warusawithana M, Schlom DG, Santos MB, Harris JS, Nishi Y. High-indium-content InGaAs metal-oxide-semiconductor capacitor with amorphous LaAl O3 gate dielectric Applied Physics Letters. 91. DOI: 10.1063/1.2776846 |
0.495 |
|
| 2007 |
Choi D, Harris JS, Warusawithana M, Schlom DG. Annealing condition optimization and electrical characterization of amorphous LaAl O3 GaAs metal-oxide-semiconductor capacitors Applied Physics Letters. 90. DOI: 10.1063/1.2748308 |
0.744 |
|
| 2007 |
Bae HP, Bank SR, Yuen HB, Sarmiento T, Pickett ER, Wistey MA, Harris JS. Temperature dependencies of annealing behaviors of GaInNAsSb/GaNAs quantum wells for long wavelength dilute-nitride lasers Applied Physics Letters. 90. DOI: 10.1063/1.2746944 |
0.812 |
|
| 2007 |
Jackrel DB, Bank SR, Yuen HB, Wistey MA, Harris JS, Ptak AJ, Johnston SW, Friedman DJ, Kurtz SR. Dilute nitride GaInNAs and GaInNAsSb solar cells by molecular beam epitaxy Journal of Applied Physics. 101. DOI: 10.1063/1.2744490 |
0.791 |
|
| 2007 |
Rao Z, Matteo JA, Hesselink L, Harris JS. High-intensity C-shaped nanoaperture vertical-cavity surface-emitting laser with controlled polarization Applied Physics Letters. 90: 191110. DOI: 10.1063/1.2737938 |
0.314 |
|
| 2007 |
Kudrawiec R, Bank SR, Yuen HB, Bae H, Wistey MA, Goddard LL, Harris JS, Gladysiewicz M, Motyka M, Misiewicz J. Conduction band offset for Ga0.62In0.38N xAs0.991-xSb0.009/GaNyAs 1-y/GaAs systems with the ground state transition at 1.5-1.65 μm Applied Physics Letters. 90. DOI: 10.1063/1.2716366 |
0.779 |
|
| 2007 |
Kudrawiec R, Yuen HB, Bank SR, Bae HP, Wistey MA, Harris JS, Motyka M, Misiewicz J. Fermi level shift in GaInNAsSb/GaAs quantum wells upon annealing studied by contactless electroreflectance Applied Physics Letters. 90. DOI: 10.1063/1.2437729 |
0.751 |
|
| 2007 |
Kudrawiec R, Yuen HB, Motyka M, Gladysiewicz M, Misiewicz J, Bank SR, Bae HP, Wistey MA, Harris JS. Contactless electroreflectance of GaInNAsSbGaAs single quantum wells with indium content of 8%-32% Journal of Applied Physics. 101. DOI: 10.1063/1.2382721 |
0.743 |
|
| 2007 |
Yang H, Khalili A, Wistey M, Harris J. Evanescent-coupled GaInNAsSb in-line fibre photodetectors Iet Optoelectronics. 1: 175-177. DOI: 10.1049/Iet-Opt:20060065 |
0.746 |
|
| 2007 |
Yu X, Scaccabarozzi L, Lin AC, Fejer MM, Harris JS. Growth of GaAs with orientation-patterned structures for nonlinear optics Journal of Crystal Growth. 301: 163-167. DOI: 10.1016/J.Jcrysgro.2006.11.315 |
0.731 |
|
| 2007 |
Harris JS, Kudrawiec R, Yuen HB, Bank SR, Bae HP, Wistey MA, Jackrel D, Pickett ER, Sarmiento T, Goddard LL, Lordi V, Gugov T. Development of GaInNAsSb alloys: Growth, band structure, optical properties and applications Physica Status Solidi (B) Basic Research. 244: 2707-2729. DOI: 10.1002/Pssb.200675620 |
0.799 |
|
| 2007 |
Kudrawiec R, Yuen HB, Bank SR, Bae HP, Wistey MA, Harris JS, Motyka M, Gladysiewicz M, Misiewicz J. Electromodulation spectroscopy of interband transitions in GaInNAsSb/GaAs quantum wells with high indium content Physica Status Solidi (a) Applications and Materials Science. 204: 364-372. DOI: 10.1002/Pssa.200673954 |
0.758 |
|
| 2007 |
Kudrawiec R, Yuen HB, Bank SR, Bae HP, Wistey MA, Harris JS, Motyka M, Gladysiewicz M, Misiewicz J. The influence of antimony on the optical quality of highly strained GaInNAs/GaAs QWs investigated by contacless electroreflectance Physica Status Solidi (a) Applications and Materials Science. 204: 543-546. DOI: 10.1002/Pssa.200673291 |
0.744 |
|
| 2006 |
Imeshev G, Fermann ME, Vodopyanov KL, Fejer MM, Yu X, Harris JS, Bliss D, Lynch C. High-power source of THz radiation based on orientation-patterned GaAs pumped by a fiber laser. Optics Express. 14: 4439-44. PMID 19516596 DOI: 10.1364/Oe.14.004439 |
0.34 |
|
| 2006 |
Fidaner O, Demir HV, Sabnis VA, Zheng JF, Harris JS, Miller DA. Integrated photonic switches for nanosecond packet-switched optical wavelength conversion. Optics Express. 14: 361-8. PMID 19503349 DOI: 10.1364/Opex.14.000361 |
0.302 |
|
| 2006 |
Scaccabarozzi L, Fejer MM, Huo Y, Fan S, Yu X, Harris JS. Enhanced second-harmonic generation in AlGaAs/AlxOy tightly confining waveguides and resonant cavities. Optics Letters. 31: 3626-8. PMID 17130925 DOI: 10.1364/Ol.31.003626 |
0.712 |
|
| 2006 |
Scaccabarozzi L, Fejer MM, Huo Y, Fan S, Yu X, Harris JS. Dichroic mirror embedded in a submicrometer waveguide for enhanced resonant nonlinear optical devices. Optics Letters. 31: 3285-7. PMID 17072398 DOI: 10.1364/Ol.31.003285 |
0.715 |
|
| 2006 |
Kuo PS, Vodopyanov KL, Fejer MM, Simanovskii DM, Yu X, Harris JS, Bliss D, Weyburne D. Optical parametric generation of a mid-infrared continuum in orientation-patterned GaAs. Optics Letters. 31: 71-3. PMID 16419881 DOI: 10.1364/Ol.31.000071 |
0.386 |
|
| 2006 |
Kim SM, Hatami F, Yuen HB, Harris JS. Investigation of Nitrogen Induced closely coupled Sb based Quantum Dots for Infrared Sensors Application Mrs Proceedings. 959. DOI: 10.1557/Proc-0959-M16-07 |
0.769 |
|
| 2006 |
Kim SM, Yuen HB, Hatami F, Moto A, Chin A, Harris JS. Investigation of Optical Properties of Nitrogen Incorporated Sb based Quantum Well and Quantum Dots for Infrared Sensors Application Mrs Proceedings. 955. DOI: 10.1557/Proc-0955-I15-52 |
0.782 |
|
| 2006 |
Yu X, Scaccabarozzi L, Lin AC, Fu J, Kuo PS, Fejer MM, Harris JS. Low loss orientation-patterned AlGaAs waveguides for quasi phase matched second harmonic generation Proceedings of Spie. 6103: 119-124. DOI: 10.1117/12.647241 |
0.724 |
|
| 2006 |
Kim SM, Hatami F, Kurian AW, Ford J, Harris JS, Scalari G, Giovannini M, Hoyler N, Faist J, Harris G. Bio-medical imaging with a terahertz quantum cascade laser Biomedical Optics. 6095. DOI: 10.1117/12.647233 |
0.301 |
|
| 2006 |
Rajaram R, Ney A, Farrow RFC, Parkin SSP, Solomon GS, Harris JS. Structural and magnetic behavior of transition metal doped InN grown by molecular beam epitaxy Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 24: 1644-1648. DOI: 10.1116/1.2192537 |
0.377 |
|
| 2006 |
Ptak AJ, Friedman DJ, Kurtz S, Reedy RC, Young M, Jackrel DB, Yuen HB, Bank SR, Wistey MA, Harris JS. Calcium impurities in enhanced-depletion-width GaInNAs grown by molecular-beam epitaxy Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures. 24: 1540. DOI: 10.1116/1.2190664 |
0.78 |
|
| 2006 |
Zheng JF, Demir HV, Sabnis VA, Fidaner O, Harris JS, Miller DAB. Self-aligned via and trench for metal contact in III-V semiconductor devices Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 24: 1117-1122. DOI: 10.1116/1.2188000 |
0.308 |
|
| 2006 |
Hatami F, Masselink WT, Lordi V, Harris JS. Green emission from InP-GaP quantum-dot light-emitting diodes Ieee Photonics Technology Letters. 18: 895-897. DOI: 10.1109/Lpt.2006.872288 |
0.666 |
|
| 2006 |
Kuo YH, Lee YK, Ge Y, Ren S, Roth JE, Kamins TI, Miller DAB, Harris JS. Quantum-confined stark effect in Ge/SiGe quantum wells on Si for optical modulators Ieee Journal On Selected Topics in Quantum Electronics. 12: 1503-1512. DOI: 10.1109/Jstqe.2006.883146 |
0.428 |
|
| 2006 |
Kudrawiec R, Gladysiewicz M, Misiewicz J, Yuen HB, Bank SR, Wistey MA, Bae HP, Harris JS. Interband transitions inGaN0.02As0.98−xSbx∕GaAs(0Physical Review B. 73: 245413. DOI: 10.1103/Physrevb.73.245413 |
0.735 |
|
| 2006 |
Hatami F, Masselink WT, Harris JS. Colour-tunable light-emitting diodes based on InP/GaP nanostructures Nanotechnology. 17: 3703-3706. DOI: 10.1088/0957-4484/17/15/014 |
0.379 |
|
| 2006 |
Ney A, Rajaram R, Harris JS, Parkin SSP. Dilute magnetic semiconductors based on InN Phase Transitions. 79: 785-791. DOI: 10.1080/01411590601124796 |
0.361 |
|
| 2006 |
Goel N, Majhi P, Chui CO, Tsai W, Choi D, Harris JS. InGaAs metal-oxide-semiconductor capacitors with HfO2 gate dielectric grown by atomic-layer deposition Applied Physics Letters. 89. DOI: 10.1063/1.2363959 |
0.326 |
|
| 2006 |
Vodopyanov KL, Fejer MM, Yu X, Harris JS, Lee Y, Hurlbut WC, Kozlov VG, Bliss D, Lynch C. Terahertz-wave generation in quasi-phase-matched GaAs Applied Physics Letters. 89: 141119. DOI: 10.1063/1.2357551 |
0.397 |
|
| 2006 |
Hatami F, Kim SM, Yuen HB, Harris JS. InSb and InSb:N multiple quantum dots Applied Physics Letters. 89: 133115. DOI: 10.1063/1.2357546 |
0.767 |
|
| 2006 |
Yuen HB, Kim SM, Hatami F, Harris JS, Chin AH. Mid-infrared luminescence of an InNAsSb∕InAs single quantum well grown by molecular beam epitaxy Applied Physics Letters. 89: 121912. DOI: 10.1063/1.2356102 |
0.779 |
|
| 2006 |
Khalili A, Bae H, Harris JS. An evanescent-coupling approach to making stable fiber-coupled semiconductor lasers Applied Physics Letters. 89: 41105. DOI: 10.1063/1.2234591 |
0.319 |
|
| 2006 |
Bank SR, Yuen HB, Bae H, Wistey MA, Moto A, Harris JS. Enhanced luminescence in GaInNAsSb quantum wells through variation of the arsenic and antimony fluxes Applied Physics Letters. 88: 241923. DOI: 10.1063/1.2213176 |
0.819 |
|
| 2006 |
Kudrawiec R, Motyka M, Gladysiewicz M, Misiewicz J, Yuen HB, Bank SR, Bae H, Wistey MA, Harris JS. Band gap discontinuity in Ga0.9In0.1N0.027As0.973−xSbx∕GaAs single quantum wells with 0⩽x<0.06 studied by contactless electroreflectance spectroscopy Applied Physics Letters. 88: 221113. DOI: 10.1063/1.2208949 |
0.748 |
|
| 2006 |
Yuen HB, Bank SR, Bae H, Wistey MA, Harris JS. Effects of strain on the optimal annealing temperature of GaInNAsSb quantum wells Applied Physics Letters. 88: 221913. DOI: 10.1063/1.2208937 |
0.792 |
|
| 2006 |
Bank SR, Yuen HB, Bae H, Wistey MA, Harris JS. Overannealing effects in GaInNAs(Sb) alloys and their importance to laser applications Applied Physics Letters. 88: 221115. DOI: 10.1063/1.2208375 |
0.802 |
|
| 2006 |
Yuen HB, Bank SR, Bae H, Wistey MA, Harris JS. The role of antimony on properties of widely varying GaInNAsSb compositions Journal of Applied Physics. 99: 093504. DOI: 10.1063/1.2191745 |
0.807 |
|
| 2006 |
Wistey M, Bank S, Bae H, Yuen H, Pickett E, Goddard L, Harris J. GaInNAsSb∕GaAs vertical cavity surface emitting lasers at 1534 nm Electronics Letters. 42: 282. DOI: 10.1049/El:20064455 |
0.762 |
|
| 2006 |
Yang H, Lordi V, Harris JS. Photoluminescence and electroabsorption in GaNAs/GaAsSb heterojunctions Electronics Letters. 42: 52-54. DOI: 10.1049/El:20063572 |
0.757 |
|
| 2006 |
Kudrawiec R, Gladysiewicz M, Misiewicz J, Yuen H, Bank S, Wistey M, Bae H, Harris JS. Photoreflectance spectroscopy of a Ga0.62In0.38N0.026As0.954Sb0.02/GaAs single quantum well tailored at 1.5μm Solid State Communications. 137: 138-141. DOI: 10.1016/J.Ssc.2005.11.006 |
0.756 |
|
| 2006 |
Kudrawiec R, Gladysiewicz M, Motyka M, Misiewicz J, Yuen H, Bank S, Wistey M, Bae H, Harris JS. Contactless electroreflectance spectroscopy of Ga(In)NAs/GaAs quantum well structures containing Sb atoms Applied Surface Science. 253: 152-157. DOI: 10.1016/J.Apsusc.2006.05.111 |
0.751 |
|
| 2006 |
Bisson SE, Kulp TJ, Levi O, Harris JS, Fejer MM. Long-wave IR chemical sensing based on difference frequency generation in orientation-patterned GaAs Applied Physics B: Lasers and Optics. 85: 199-206. DOI: 10.1007/S00340-006-2311-1 |
0.377 |
|
| 2005 |
Yu X, Scaccabarozzi L, Harris JS, Kuo PS, Fejer MM. Efficient continuous wave second harmonic generation pumped at 1.55 microm in quasi-phase-matched AlGaAs waveguides. Optics Express. 13: 10742-8. PMID 19503290 DOI: 10.1364/Opex.13.010742 |
0.706 |
|
| 2005 |
Kuo YH, Lee YK, Ge Y, Ren S, Roth JE, Kamins TI, Miller DA, Harris JS. Strong quantum-confined Stark effect in germanium quantum-well structures on silicon. Nature. 437: 1334-6. PMID 16251959 DOI: 10.1038/Nature04204 |
0.419 |
|
| 2005 |
Jiang X, Wang R, Shelby RM, Macfarlane RM, Bank SR, Harris JS, Parkin SS. Highly spin-polarized room-temperature tunnel injector for semiconductor spintronics using MgO(100). Physical Review Letters. 94: 056601. PMID 15783671 DOI: 10.1103/Physrevlett.94.056601 |
0.781 |
|
| 2005 |
Bank SR, Wistey MA, Yuen HB, Goddard LL, Bae H, Harris JS. Molecular-beam epitaxy growth of low-threshold cw GaInNAsSb lasers at 1.5 μm Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures. 23: 1337. DOI: 10.1116/1.1914825 |
0.818 |
|
| 2005 |
Wistey MA, Bank SR, Yuen HB, Goddard LL, Gugov T, Harris JS. Protecting wafer surface during plasma ignition using an arsenic cap Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures. 23: 1324. DOI: 10.1116/1.1914820 |
0.78 |
|
| 2005 |
Wistey MA, Bank SR, Yuen HB, Harris JS, Oye MM, Holmes AL. Using beam flux monitor as Langmuir probe for plasma-assisted molecular beam epitaxy Journal of Vacuum Science and Technology a: Vacuum, Surfaces and Films. 23: 460-464. DOI: 10.1116/1.1881635 |
0.736 |
|
| 2005 |
Yuen HB, Wistey MA, Bank SR, Bae H, Harris JS. Investigation of nitrogen flow variation into a radio frequency plasma cell on plasma properties and GaInNAs grown by molecular beam epitaxy Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures. 23: 1328. DOI: 10.1116/1.1881592 |
0.791 |
|
| 2005 |
Bank SR, Wistey MA, Yuen HB, Lordi V, Gambin VF, Harris JS. Effects of antimony and ion damage on carrier localization in molecular-beam-epitaxy-grown GaInNAs Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures. 23: 1320. DOI: 10.1116/1.1878995 |
0.811 |
|
| 2005 |
Ioakeimidi K, Leheny RF, Gradinaru S, Bolton PR, Aldana R, Ma K, Clendenin JE, Harris JS, Pease RFW. Photoelectronic analog-to-digital conversion: Sampling and quantizing at 100 Gs/s Ieee Transactions On Microwave Theory and Techniques. 53: 336-341. DOI: 10.1109/Tmtt.2004.839923 |
0.302 |
|
| 2005 |
Wiemer MW, Aldaz RI, Miller DAB, Harris JS. A single transverse-mode monolithically integrated long vertical-cavity surface-emitting laser Ieee Photonics Technology Letters. 17: 1366-1368. DOI: 10.1109/Lpt.2005.848277 |
0.801 |
|
| 2005 |
Chen R, Chin H, Miller DAB, Ma K, Harris JS. MSM-based integrated CMOS wavelength-tunable optical receiver Ieee Photonics Technology Letters. 17: 1271-1273. DOI: 10.1109/Lpt.2005.846579 |
0.3 |
|
| 2005 |
Sabnis VA, Demir HV, Fidaner O, Zheng JF, Harris JS, Miller DAB, Li N, Wu TC, Chen HT, Houng YM. Intimate monolithic integration of chip-scale photonic circuits Ieee Journal On Selected Topics in Quantum Electronics. 11: 1255-1264. DOI: 10.1109/Jstqe.2005.860995 |
0.363 |
|
| 2005 |
Ma K, Chen R, Miller DAB, Harris JS. Novel on-chip fully monolithic integration of GaAs devices with completely fabricated Si CMOS circuits Ieee Journal of Selected Topics in Quantum Electronics. 11: 1278-1283. DOI: 10.1109/Jstqe.2005.860991 |
0.303 |
|
| 2005 |
Demir HV, Sabnis VA, Fidaner O, Zheng JF, Harris JS, Miller DAB. Multifunctional integrated photonic switches Ieee Journal On Selected Topics in Quantum Electronics. 11: 86-95. DOI: 10.1109/Jstqe.2004.841715 |
0.324 |
|
| 2005 |
Chen R, Miller DAB, Ma K, Harris JS. Novel electrically controlled rapidly wavelength selective photodetection using MSMs Ieee Journal of Selected Topics in Quantum Electronics. 11: 184-189. DOI: 10.1109/Jstqe.2004.841706 |
0.304 |
|
| 2005 |
Lordi V, Yuen HB, Bank SR, Wistey MA, Harris JS, Friedrich S. Nearest-neighbor distributions inGa1−xInxNyAs1−yandGa1−xInxNyAs1−y−zSbzthin films upon annealing Physical Review B. 71. DOI: 10.1103/Physrevb.71.125309 |
0.803 |
|
| 2005 |
Salis G, Wang R, Jiang X, Shelby RM, Parkin SSP, Bank SR, Harris JS. Temperature independence of the spin-injection efficiency of a MgO-based tunnel spin injector Applied Physics Letters. 87: 262503. DOI: 10.1063/1.2149369 |
0.565 |
|
| 2005 |
Rajaram R, Ney A, Solomon G, Harris JS, Farrow RFC, Parkin SSP. Growth and magnetism of Cr-doped InN Applied Physics Letters. 87: 1-3. DOI: 10.1063/1.2115085 |
0.34 |
|
| 2005 |
Kudrawiec R, Motyka M, Misiewicz J, Yuen HB, Bank SR, Wistey MA, Bae HP, Harris JS. Photoluminescence from as-grown and annealed GaN0.027As0.863Sb0.11∕GaAs single quantum wells Journal of Applied Physics. 98: 63527. DOI: 10.1063/1.2060940 |
0.765 |
|
| 2005 |
Bank SR, Yuen HB, Wistey MA, Lordi V, Bae HP, Harris JS. Effects of growth temperature on the structural and optical properties of 1.55μm GaInNAsSb quantum wells grown on GaAs Applied Physics Letters. 87: 021908. DOI: 10.1063/1.1993772 |
0.812 |
|
| 2005 |
Oye MM, Wistey MA, Reifsnider JM, Agarwal S, Mattord TJ, Govindaraju S, Hallock GA, Holmes AL, Bank SR, Yuen HB, Harris JS. Ion damage effects from negative deflector plate voltages during the plasma-assisted molecular-beam epitaxy growth of dilute nitrides Applied Physics Letters. 86: 1-3. DOI: 10.1063/1.1940126 |
0.778 |
|
| 2005 |
Yuen HB, Bank SR, Wistey MA, Harris JS, Seong M, Yoon S, Kudrawiec R, Misiewicz J. Improved optical quality of GaNAsSb in the dilute Sb limit Journal of Applied Physics. 97: 113510. DOI: 10.1063/1.1926398 |
0.805 |
|
| 2005 |
Kudrawiec R, Ryczko K, Misiewicz J, Yuen HB, Bank SR, Wistey MA, Bae HP, Harris JS. Band-gap discontinuity in GaN0.02As0.87Sb0.11∕GaAs single-quantum wells investigated by photoreflectance spectroscopy Applied Physics Letters. 86: 141908. DOI: 10.1063/1.1897849 |
0.744 |
|
| 2005 |
Hatami F, Lordi V, Harris JS, Kostial H, Masselink WT. Red light-emitting diodes based on InP∕GaP quantum dots Journal of Applied Physics. 97: 96106. DOI: 10.1063/1.1884752 |
0.693 |
|
| 2005 |
Goddard LL, Bank SR, Wistey MA, Yuen HB, Rao Z, Harris JS. Recombination, gain, band structure, efficiency, and reliability of 1.5-μm GaInNAsSb/GaAs lasers Journal of Applied Physics. 97: 083101. DOI: 10.1063/1.1873035 |
0.807 |
|
| 2005 |
Kudrawiec R, Yuen HB, Ryczko K, Misiewicz J, Bank SR, Wistey MA, Bae HP, Harris JS. Photoreflectance and photoluminescence investigations of a step-like GaInNAsSb∕GaAsN∕GaAs quantum well tailored at 1.5μm: The energy level structure and the Stokes shift Journal of Applied Physics. 97: 53515. DOI: 10.1063/1.1854729 |
0.745 |
|
| 2005 |
Wang R, Jiang X, Shelby RM, Macfarlane RM, Parkin SSP, Bank SR, Harris JS. Increase in spin injection efficiency of a CoFe∕MgO(100) tunnel spin injector with thermal annealing Applied Physics Letters. 86: 052901. DOI: 10.1063/1.1787896 |
0.791 |
|
| 2005 |
Khalili A, Harris JS. Side-coupled fibre semiconductor laser Electronics Letters. 41: 1128-1130. DOI: 10.1049/El:20052813 |
0.356 |
|
| 2005 |
Thrush E, Levi O, Cook LJ, Deich J, Kurtz A, Smith SJ, Moerner WE, Harris JS. Monolithically integrated semiconductor fluorescence sensor for microfluidic applications Sensors and Actuators, B: Chemical. 105: 393-399. DOI: 10.1016/J.Snb.2004.06.028 |
0.326 |
|
| 2005 |
Liu X, Tang Q, Harris JS, Kamins TI. Arsenic surface segregation during in situ doped silicon and Si1−xGex molecular beam epitaxy Journal of Crystal Growth. 281: 334-343. DOI: 10.1016/J.Jcrysgro.2005.04.066 |
0.325 |
|
| 2005 |
Wistey MA, Bank SR, Yuen HB, Bae H, Harris JS. Nitrogen plasma optimization for high-quality dilute nitrides Journal of Crystal Growth. 278: 229-233. DOI: 10.1016/J.Jcrysgro.2004.12.060 |
0.788 |
|
| 2005 |
Harris JS. The opportunities, successes and challenges for GaInNAsSb Journal of Crystal Growth. 278: 3-17. DOI: 10.1016/J.Jcrysgro.2004.12.050 |
0.435 |
|
| 2005 |
Ney A, Rajaram R, Farrow RFC, Harris JS, Parkin SSP. Mn- and Cr-doped InN: A promising diluted magnetic semiconductor material Journal of Superconductivity and Novel Magnetism. 18: 41-46. DOI: 10.1007/S10948-005-2148-6 |
0.329 |
|
| 2004 |
Demir H, Sabnis V, Fidaner O, Harris J, Miller D, Zheng JF. Dual-diode quantum-well modulator for C-band wavelength conversion and broadcasting. Optics Express. 12: 310-6. PMID 19471539 DOI: 10.1364/Opex.12.000310 |
0.371 |
|
| 2004 |
Vodopyanov KL, Levi O, Kuo PS, Pinguet TJ, Harris JS, Fejer MM, Gerard B, Becouarn L, Lallier E. Optical parametric oscillation in quasi-phase-matched GaAs. Optics Letters. 29: 1912-4. PMID 15357357 |
0.787 |
|
| 2004 |
Gugov T, Wistey M, Yuen H, Bank S, Harris JS. Structural Characterization of Molecular Beam Epitaxy Grown GaInNAs and GaInNAsSb Quantum Wells by Transmission Electron Microscopy Mrs Proceedings. 817. DOI: 10.1557/Proc-817-L6.40 |
0.81 |
|
| 2004 |
Aldaz RI, Wiemer MW, Miller DAB, Harris JS. Monolithically-integrated long vertical cavity surface emitting laser incorporating a concave micromirror on a glass substrate Optics Express. 12: 3967-3971. DOI: 10.1364/Opex.12.003967 |
0.812 |
|
| 2004 |
Bisson SE, Kulp TJ, Levi O, Harris J, Fejer MM. A broadly tunable, high resolution IR cavity ring-down spectrometer based on difference frequency generation in orientation-patterned GaAs Proceedings of Spie - the International Society For Optical Engineering. 5337: 112-116. DOI: 10.1117/12.531730 |
0.379 |
|
| 2004 |
Thrush E, Levi O, Cook LJ, Deich J, Smith SJ, Moerner WE, Harris JS. Laser background characterization in a monolithically integrated bio-fluorescence sensor Proceedings of Spie - the International Society For Optical Engineering. 5318: 59-65. DOI: 10.1117/12.525133 |
0.31 |
|
| 2004 |
Fu J, Bank SR, Wistey MA, Yuen HB, Harris JS. Solid-source molecular-beam epitaxy growth of GaInNAsSb/InGaAs single quantum well on InP with photoluminescence peak wavelength at 2.04 μm Journal of Vacuum Science & Technology B. 22: 1463-1467. DOI: 10.1116/1.1691411 |
0.818 |
|
| 2004 |
Yu X, Kuo PS, Ma K, Levi O, Fejer MM, Harris JS. Single-phase growth studies of GaP on Si by solid-source molecular beam epitaxy Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures. 22: 1450. DOI: 10.1116/1.1669670 |
0.362 |
|
| 2004 |
Gugov T, Gambin V, Wistey M, Yuen H, Bank S, Harris JS. Use of transmission electron microscopy in the characterization of GaInNAs(Sb) quantum well structures grown by molecular beam epitaxy Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures. 22: 1588. DOI: 10.1116/1.1650853 |
0.812 |
|
| 2004 |
Connelly D, Faulkner C, Grupp DE, Harris JS. A new route to zero-barrier metal source/drain MOSFETs Ieee Transactions On Nanotechnology. 3: 98-104. DOI: 10.1109/Tnano.2003.820774 |
0.305 |
|
| 2004 |
Kim SM, Harris JS. Multicolor InGaAs quantum-dot infrared photodetectors Ieee Photonics Technology Letters. 16: 2538-2540. DOI: 10.1109/Lpt.2004.835197 |
0.405 |
|
| 2004 |
Demir HV, Sabnis VA, Zheng JF, Fidaner O, Harris JS, Miller DAB. Scalable wavelength-converting crossbar switches Ieee Photonics Technology Letters. 16: 2305-2307. DOI: 10.1109/Lpt.2004.834473 |
0.34 |
|
| 2004 |
Thrush E, Levi O, Ha W, Carey G, Cook LJ, Deich J, Smith SJ, Moerner WE, Harris JS. Integrated semiconductor vertical-cavity surface-emitting lasers and PIN photodetectors for biomedical fluorescence sensing Ieee Journal of Quantum Electronics. 40: 491-498. DOI: 10.1109/Jqe.2004.826440 |
0.351 |
|
| 2004 |
Kim SM, Harris JS. Multispectral operation of self-assembled InGaAs quantum-dot infrared photodetectors Applied Physics Letters. 85: 4154-4156. DOI: 10.1063/1.1810208 |
0.392 |
|
| 2004 |
Yuen HB, Bank SR, Wistey MA, Harris JS, Moto A. Comparison of GaNAsSb and GaNAs as quantum-well barriers for GaInNAsSb optoelectronic devices operating at 1.3–1.55μm Journal of Applied Physics. 96: 6375-6381. DOI: 10.1063/1.1807028 |
0.828 |
|
| 2004 |
Lordi V, Yuen HB, Bank SR, Harris JS. Quantum-confined Stark effect of GaInNAs(Sb) quantum wells at 1300–1600nm Applied Physics Letters. 85: 902-904. DOI: 10.1063/1.1777825 |
0.815 |
|
| 2004 |
Ramsteiner M, Jiang DS, Harris JS, Ploog KH. Nonradiative recombination centers in Ga(As, N) and their annealing behavior studied by Raman spectroscopy Applied Physics Letters. 84: 1859-1861. DOI: 10.1063/1.1669070 |
0.312 |
|
| 2004 |
Sabnis VA, Demir HV, Fidaner O, Harris JS, Miller DAB, Zheng JF, Li N, Wu TC, Chen HT, Houng YM. Optically controlled electroabsorption modulators for unconstrained wavelength conversion Applied Physics Letters. 84: 469-471. DOI: 10.1063/1.1643539 |
0.357 |
|
| 2004 |
Bank SR, Wistey MA, Goddard LL, Yuen HB, Bae HP, Harris JS. High-performance 1.5 µm GaInNAsSb lasers grown on GaAs Electronics Letters. 40: 1186-1187. DOI: 10.1049/El:20046270 |
0.746 |
|
| 2003 |
DiCarlo L, Marcus CM, Harris JS. Photocurrent, rectification, and magnetic field symmetry of induced current through quantum dots. Physical Review Letters. 91: 246804. PMID 14683146 DOI: 10.1103/Physrevlett.91.246804 |
0.32 |
|
| 2003 |
Thrush E, Levi O, Ha W, Wang K, Smith SJ, Harris JS. Integrated bio-fluorescence sensor. Journal of Chromatography. A. 1013: 103-10. PMID 14604112 DOI: 10.1016/S0021-9673(03)01361-X |
0.315 |
|
| 2003 |
Jiang X, Wang R, van Dijken S, Shelby R, Macfarlane R, Solomon GS, Harris J, Parkin SS. Optical detection of hot-electron spin injection into GaAs from a magnetic tunnel transistor source. Physical Review Letters. 90: 256603. PMID 12857153 DOI: 10.1103/Physrevlett.90.256603 |
0.765 |
|
| 2003 |
Lordi V, Gambin V, Friedrich S, Funk T, Takizawa T, Uno K, Harris JS. Nearest-neighbor configuration in (GaIn)(NAs) probed by x-ray absorption spectroscopy. Physical Review Letters. 90: 145505. PMID 12731929 DOI: 10.1103/Physrevlett.90.145505 |
0.647 |
|
| 2003 |
Ma K, Urata R, Miller DAB, Harris JS. Low Temperature Growth of GaAs on Si Substrates for Ultra-fast Photoconductive Switches Mrs Proceedings. 768. DOI: 10.1557/Proc-768-G3.14 |
0.402 |
|
| 2003 |
Thrush E, Levi O, Wang K, Harris JS, Smith SJ. High throughput integration of optoelectronics devices for biochip fluorescent detection Proceedings of Spie - the International Society For Optical Engineering. 4982: 162-169. DOI: 10.1117/12.478145 |
0.319 |
|
| 2003 |
Urata R, Takahashi R, Sabnis VA, Miller DAB, Harris JS. Ultrafast optoelectronic sample-and-hold using low-temperature-grown GaAs MSM Ieee Photonics Technology Letters. 15: 724-726. DOI: 10.1109/Lpt.2003.810252 |
0.329 |
|
| 2003 |
Urata R, Nathawad LY, Takahashi R, Ma K, Miller DAB, Wooley BA, Harris JS. Photonic A/D conversion using low-temperature-grown GaAs MSM switches integrated with Si-CMOS Journal of Lightwave Technology. 21: 3104-3115. DOI: 10.1109/Jlt.2003.820054 |
0.329 |
|
| 2003 |
Skauli T, Kuo PS, Vodopyanov KL, Pinguet TJ, Levi O, Eyres LA, Harris JS, Fejer MM, Gerard B, Becouarn L, Lallier E. Improved dispersion relations for GaAs and applications to nonlinear optics Journal of Applied Physics. 94: 6447-6455. DOI: 10.1063/1.1621740 |
0.782 |
|
| 2003 |
Krispin P, Gambin V, Harris JS, Ploog KH. Nitrogen-related electron traps in Ga(As, N) layers (≤3% N) Journal of Applied Physics. 93: 6095-6099. DOI: 10.1063/1.1568523 |
0.356 |
|
| 2003 |
Bank SR, Ha W, Gambin V, Wistey M, Yuen H, Goddard L, Kim S, Harris JS. 1.5 μm GaInNAs(Sb) lasers grown on GaAs by MBE Journal of Crystal Growth. 251: 367-371. DOI: 10.1016/S0022-0248(02)02446-6 |
0.823 |
|
| 2003 |
Volz K, Gambin V, Ha W, Wistey MA, Yuen H, Bank S, Harris JS. The role of Sb in the MBE growth of (GaIn)(NAsSb) Journal of Crystal Growth. 251: 360-366. DOI: 10.1016/S0022-0248(02)02198-X |
0.743 |
|
| 2003 |
Liu X, Tang Q, Kamins TI, Harris JS. Heavy arsenic doping of silicon by molecular beam epitaxy Journal of Crystal Growth. 251: 651-656. DOI: 10.1016/S0022-0248(02)02197-8 |
0.367 |
|
| 2003 |
Tang Q, Liu X, Kamins TI, Solomon GS, Harris JS. Nucleation of Ti-catalyzed self-assembled kinked Si nanowires grown by gas source MBE Journal of Crystal Growth. 251: 662-665. DOI: 10.1016/S0022-0248(02)02196-6 |
0.332 |
|
| 2003 |
Gambin V, Lordi V, Ha W, Wistey M, Takizawa T, Uno K, Friedrich S, Harris J. Structural changes on annealing of MBE grown (Ga, In)(N, As) as measured by X-ray absorption fine structure Journal of Crystal Growth. 251: 408-411. DOI: 10.1016/S0022-0248(02)02194-2 |
0.774 |
|
| 2002 |
Levi O, Pinguet TJ, Skauli T, Eyres LA, Parameswaran KR, Harris JS, Fejer MM, Kulp TJ, Bisson SE, Gerard B, Lallier E, Becouarn L. Difference frequency generation of 8-microm radiation in orientation- patterned GaAs. Optics Letters. 27: 2091-3. PMID 18033451 DOI: 10.1364/Ol.27.002091 |
0.787 |
|
| 2002 |
Skauli T, Vodopyanov KL, Pinguet TJ, Schober A, Levi O, Eyres LA, Fejer MM, Harris JS, Gerard B, Becouarn L, Lallier E, Arisholm G. Measurement of the nonlinear coefficient of orientation-patterned GaAs and demonstration of highly efficient second-harmonic generation. Optics Letters. 27: 628-30. PMID 18007884 DOI: 10.1364/Ol.27.000628 |
0.79 |
|
| 2002 |
Harris JS, Gambin V. GaInNAs: A New Material in the Quest for Communications Lasers Mrs Proceedings. 722. DOI: 10.1557/Proc-722-K4.1 |
0.38 |
|
| 2002 |
Bisson SE, Kulp TJ, Bambha R, Armstrong K, Levi O, Pinguet T, Eyres LA, Fejer MM, Harris JS. Long-wave IR chemical sensing based on difference frequency generation in orientation patterned GaAs High-Power Lasers and Applications. 4634: 78-82. DOI: 10.1117/12.463834 |
0.784 |
|
| 2002 |
Ha W, Gambin V, Bank S, Wistey M, Yuen H, Kim S, Harris JS. Long-wavelength GaInNAs(Sb) lasers on GaAs Ieee Journal of Quantum Electronics. 38: 1260-1267. DOI: 10.1109/Jqe.2002.802451 |
0.824 |
|
| 2002 |
Ha W, Gambin V, Wistey M, Bank S, Kim S, Harris JS. Multiple-quantum-well GaInNAs-GaNAs ridge-waveguide laser diodes operating out to 1.4 /spl mu/m Ieee Photonics Technology Letters. 14: 591-593. DOI: 10.1109/68.998694 |
0.782 |
|
| 2002 |
Lin C, Martin WA, Harris JS. Optomechanical model of surface micromachined tunable optoelectronic devices Ieee Journal of Selected Topics in Quantum Electronics. 8: 80-87. DOI: 10.1109/2944.991402 |
0.303 |
|
| 2002 |
Harris JS. GaInNAs long-wavelength lasers: progress and challenges Semiconductor Science and Technology. 17: 880-891. DOI: 10.1088/0268-1242/17/8/317 |
0.394 |
|
| 2002 |
Krispin P, Gambin V, Harris JS, Ploog KH. Ga(As,N) layers in the dilute N limit studied by depth-resolved capacitance spectroscopy Applied Physics Letters. 81: 3987-3989. DOI: 10.1063/1.1522823 |
0.353 |
|
| 2002 |
Tang Q, Liu X, Kamins TI, Solomon GS, Harris JS. Twinning in TiSi2-island catalyzed Si nanowires grown by gas-source molecular-beam epitaxy Applied Physics Letters. 81: 2451-2453. DOI: 10.1063/1.1509096 |
0.314 |
|
| 2002 |
Krispin P, Spruytte SG, Harris JS, Ploog KH. Electron traps in Ga(As,N) layers grown by molecular-beam epitaxy Applied Physics Letters. 80: 2120-2122. DOI: 10.1063/1.1463214 |
0.803 |
|
| 2002 |
Ha W, Gambin V, Wistey M, Bank SR, Yuen H, Kim S, Harris JS. Long wavelength GaInNAsSb/GaNAsSb multiple quantum well lasers Electronics Letters. 38: 277-278. DOI: 10.1049/El:20020207 |
0.751 |
|
| 2002 |
Kamins TI, Williams RS, Hesjedal T, Harris JS. Chemically vapor deposited Si nanowires nucleated by self-assembled Ti islands on patterned and unpatterned Si substrates Physica E-Low-Dimensional Systems & Nanostructures. 13: 995-998. DOI: 10.1016/S1386-9477(02)00287-4 |
0.307 |
|
| 2001 |
Folk JA, Marcus CM, Harris JS. Decoherence in nearly isolated quantum dots. Physical Review Letters. 87: 206802. PMID 11690504 DOI: 10.1103/Physrevlett.87.206802 |
0.338 |
|
| 2001 |
Gambin V, Ha W, Wistey M, Kim S, Harris JS. GaInNAs Material Properties for Long Wavelength Opto-Electronic Devices Mrs Proceedings. 692. DOI: 10.1557/Proc-692-H7.1.1 |
0.71 |
|
| 2001 |
Liu H, Lin C, Harris JS. High-speed, dual-function vertical cavity multiple quantum well modulators and photodetectors for optical interconnects Optical Engineering. 40: 1186-1191. DOI: 10.1117/1.1383562 |
0.412 |
|
| 2001 |
Urata R, Takahashi R, Sabnis VA, Miller DAB, Harris JS. Ultrafast differential sample and hold using low-temperature-grown GaAs MSM for photonic A/D conversion Ieee Photonics Technology Letters. 13: 717-719. DOI: 10.1109/68.930425 |
0.332 |
|
| 2001 |
Krispin P, Spruytte SG, Harris JS, Ploog KH. Admittance dispersion of n-type GaAs/Ga(As, N)/GaAs heterostructures grown by molecular beam epitaxy Journal of Applied Physics. 90: 2405-2410. DOI: 10.1063/1.1391218 |
0.797 |
|
| 2001 |
Eyres LA, Tourreau PJ, Pinguet TJ, Ebert CB, Harris JS, Fejer MM, Becouarn L, Gerard B, Lallier E. All-epitaxial fabrication of thick, orientation-patterned GaAs films for nonlinear optical frequency conversion Applied Physics Letters. 79: 904-906. DOI: 10.1063/1.1389326 |
0.789 |
|
| 2001 |
Krispin P, Spruytte SG, Harris JS, Ploog KH. Origin and annealing of deep-level defects in p-type GaAs/Ga(As,N)/GaAs heterostructures grown by molecular beam epitaxy Journal of Applied Physics. 89: 6294-6301. DOI: 10.1063/1.1370115 |
0.807 |
|
| 2001 |
Spruytte SG, Coldren CW, Harris JS, Wampler W, Krispin P, Ploog K, Larson MC. Incorporation of nitrogen in nitride-arsenides: Origin of improved luminescence efficiency after anneal Journal of Applied Physics. 89: 4401-4406. DOI: 10.1063/1.1352675 |
0.804 |
|
| 2001 |
Kamins TI, Stanley Williams R, Basile DP, Hesjedal T, Harris JS. Ti-catalyzed Si nanowires by chemical vapor deposition: Microscopy and growth mechanisms Journal of Applied Physics. 89: 1008-1016. DOI: 10.1063/1.1335640 |
0.302 |
|
| 2001 |
Krispin P, Spruytte SG, Harris JS, Ploog KH. Deep-level defects in MBE-grown Ga(As,N) layers Physica B-Condensed Matter. 308: 870-873. DOI: 10.1016/S0921-4526(01)00926-7 |
0.805 |
|
| 2000 |
Nelson BE, Gerken M, Miller DA, Piestun R, Lin CC, Harris JS. Use of a dielectric stack as a one-dimensional photonic crystal for wavelength demultiplexing by beam shifting. Optics Letters. 25: 1502-4. PMID 18066259 DOI: 10.1364/Ol.25.001502 |
0.347 |
|
| 2000 |
Spruytte SG, Coldren CW, Marshall AF, Larson MC, Harris JS. MBE Growth of Nitride-Arsenide Materials for long Wavelength Opto-electronics Mrs Internet Journal of Nitride Semiconductor Research. 5: 474-480. DOI: 10.1557/S109257830000466X |
0.784 |
|
| 2000 |
Gotoh Y, Matsumoto K, Bubanja V, Vazquez F, Maeda T, Harris JS. Experimental and Simulated Results of Room Temperature Single Electron Transistor Formed by Atomic Force Microscopy Nano-Oxidation Process Japanese Journal of Applied Physics. 39: 2334-2337. DOI: 10.1143/Jjap.39.2334 |
0.302 |
|
| 2000 |
Coldren CW, Spruytte SG, Harris JS, Larson MC. Group III nitride–arsenide long wavelength lasers grown by elemental source molecular beam epitaxy Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures. 18: 1480. DOI: 10.1116/1.591408 |
0.822 |
|
| 2000 |
Gotoh Y, Matsumoto K, Maeda T, Cooper EB, Manalis SR, Fang H, Minne SC, Hunt T, Dai H, Harris J, Quate CF. Experimental and theoretical results of room-temperature single-electron transistor formed by the atomic force microscope nano-oxidation process Journal of Vacuum Science and Technology a: Vacuum, Surfaces and Films. 18: 1321-1325. DOI: 10.1116/1.582347 |
0.304 |
|
| 2000 |
Larson MC, Coldren CW, Spruytte SG, Petersen HE, Harris JS. Low-threshold oxide-confined GaInNAs long wavelength vertical cavity lasers Ieee Photonics Technology Letters. 12: 1598-1600. DOI: 10.1109/68.896319 |
0.81 |
|
| 2000 |
Okada Y, Iuchi Y, Kawabe M, Harris JS. Basic properties of GaAs oxide generated by scanning probe microscope tip-induced nano-oxidation process Journal of Applied Physics. 88: 1136-1140. DOI: 10.1063/1.373788 |
0.308 |
|
| 2000 |
Krispin P, Spruytte SG, Harris JS, Ploog KH. Electrical depth profile of p-type GaAs/Ga(As, N)/GaAs heterostructures determined by capacitance–voltage measurements Journal of Applied Physics. 88: 4153. DOI: 10.1063/1.1290449 |
0.798 |
|
| 2000 |
Kung HL, Miller DAB, Atanackovic P, Lin C, Harris JS, Carraresi L, Cunningham JE, Jan WY. Wavelength monitor based on two single-quantum-well absorbers sampling a standing wave pattern Applied Physics Letters. 76: 3185-3187. DOI: 10.1063/1.126623 |
0.357 |
|
| 2000 |
Mao E, Yankelevich D, Lin C, Solgaard O, Knoesen A, Harris J. Narrow-band light emission in semiconductor-fibre asymmetric waveguide coupler Electronics Letters. 36: 1378. DOI: 10.1049/El:20001022 |
0.317 |
|
| 2000 |
Mao E, Yankelevich D, Lin C, Solgaard O, Knoesen A, Harris J. Wavelength-selective semiconductor in-line fibre photodetectors Electronics Letters. 36: 515. DOI: 10.1049/El:20000430 |
0.346 |
|
| 2000 |
Coldren C, Larson M, Spruytte S, Harris J. 1200 nm GaAs-based vertical cavity lasers employing GaInNAs multiquantum well active regions Electronics Letters. 36: 951. DOI: 10.1049/El:20000365 |
0.811 |
|
| 1999 |
Baek DH, Ko SS, Kim JW, Cho TH, Oh JE, Komarov SHS, Harris JS. High Photo Conductive Gain with Lateral Transport Quantum Dot Infrared Photo Detector The Japan Society of Applied Physics. 1999: 416-417. DOI: 10.7567/Ssdm.1999.D-9-3 |
0.347 |
|
| 1999 |
Matsumoto K, Gotoh Y, Maeda T, Dagata JA, Harris J. Metal-Based Room-Temperature Operating Single Electron Devices Using Scanning Probe Oxidation Japanese Journal of Applied Physics. 38: 477-479. DOI: 10.1143/Jjap.38.477 |
0.319 |
|
| 1999 |
Huibers AG, Folk JA, Patel SR, Marcus CM, Duruöz CI, Harris JS. Low-Temperature Saturation of the Dephasing Time and Effects of Microwave Radiation on Open Quantum Dots Physical Review Letters. 83: 5090-5093. DOI: 10.1103/Physrevlett.83.5090 |
0.356 |
|
| 1999 |
McCormick KL, Woodside MT, Huang M, Wu M, McEuen PL, Duruoz C, Harris JS. Scanned potential microscopy of edge and bulk currents in the quantum Hall regime Physical Review B - Condensed Matter and Materials Physics. 59: 4654-4657. DOI: 10.1103/Physrevb.59.4654 |
0.338 |
|
| 1999 |
Yairi MB, Coldren CW, Miller DAB, Harris JS. High-speed, optically controlled surface-normal optical switch based on diffusive conduction Applied Physics Letters. 75: 597-599. DOI: 10.1063/1.124452 |
0.786 |
|
| 1999 |
Mao E, Coldren CW, Harris JS, Yankelevich DR, Solgaard O, Knoesen A. GaAs/AlGaAs multiple-quantum-well in-line fiber intensity modulator Applied Physics Letters. 75: 310-312. DOI: 10.1063/1.124359 |
0.788 |
|
| 1999 |
Solomon GS, Komarov S, Harris JS. Nearest-neighbor spatial ordering of strain-induced islands using a subsurface island superlattice Journal of Crystal Growth. 201202: 1190-1193. DOI: 10.1016/S0022-0248(99)00026-3 |
0.304 |
|
| 1999 |
Ebert CB, Eyres LA, Fejer MM, Harris JS. MBE growth of antiphase GaAs films using GaAs/Ge/GaAs heteroepitaxy Journal of Crystal Growth. 201202: 187-193. DOI: 10.1016/S0022-0248(98)01317-7 |
0.343 |
|
| 1998 |
Sugihwo F, Larson MC, Harris JS. Micromachined widely tunable vertical cavity laser diodes Ieee\/Asme Journal of Microelectromechanical Systems. 7: 48-55. DOI: 10.1109/84.661383 |
0.376 |
|
| 1998 |
Cronenwett SM, Maurer SM, Patel SR, Marcus CM, Duruöz CI, Harris JS. Mesoscopic Coulomb Blockade in One-Channel Quantum Dots Physical Review Letters. 81: 5904-5907. DOI: 10.1103/Physrevlett.81.5904 |
0.32 |
|
| 1998 |
Patel SR, Stewart DR, Marcus CM, Gökçedaǧ M, Alhassid Y, Stone AD, Duruöz CI, Harris JS. Changing the electronic spectrum of a quantum dot by adding electrons Physical Review Letters. 81: 5900-5903. DOI: 10.1103/Physrevlett.81.5900 |
0.328 |
|
| 1998 |
Huibers AG, Patel SR, Marcus CM, Brouwer PW, Duruöz CI, Harris JS. Distributions of the Conductance and its Parametric Derivatives in Quantum Dots Physical Review Letters. 81: 1917-1920. DOI: 10.1103/Physrevlett.81.1917 |
0.305 |
|
| 1998 |
Patel SR, Cronenwett SM, Stewart DR, Huibers AG, Marcus CM, Duruöz CI, Harris JS, Campman K, Gossard AC. Statistics of Coulomb Blockade Peak Spacings Physical Review Letters. 80: 4522-4525. DOI: 10.1103/Physrevlett.80.4522 |
0.407 |
|
| 1998 |
Okada Y, Amano S, Kawabe M, Shimbo BN, Harris JS. Nanoscale Oxidation Of Gaas-Based Semiconductors Using Atomic Force Microscope Journal of Applied Physics. 83: 1844-1847. DOI: 10.1063/1.366907 |
0.383 |
|
| 1998 |
Hung C, Harris JS, Marshall AF, Kiehl RA. Annealing cycle dependence of preferential arsenic precipitation in AlGaAs/GaAs layers Applied Physics Letters. 73: 330-332. DOI: 10.1063/1.121824 |
0.356 |
|
| 1998 |
Huang T, Harris JS. Growth of epitaxial AlxGa1−xN films by pulsed laser deposition Applied Physics Letters. 72: 1158-1160. DOI: 10.1063/1.121033 |
0.346 |
|
| 1998 |
Sugihwo F, Larson MC, Harris JS. Simultaneous Optimization Of Membrane Reflectance And Tuning Voltage For Tunable Vertical Cavity Lasers Applied Physics Letters. 72: 10-12. DOI: 10.1063/1.120630 |
0.39 |
|
| 1998 |
Solomon GS, Wu W, Tucker JR, Harris JS. Vertical InAs diffusion and surface ordering processes in InAs vertical quantum dot columns Physica E-Low-Dimensional Systems & Nanostructures. 2: 709-713. DOI: 10.1016/S1386-9477(98)00145-3 |
0.356 |
|
| 1998 |
Marcus CM, Patel SR, Duruöz CI, Harris JS, Campman K, Gossard AC. Statistics of peak spacings and widths in the quantum coulomb blockade regime Physica B-Condensed Matter. 249: 201-205. DOI: 10.1016/S0921-4526(98)00098-2 |
0.433 |
|
| 1998 |
McCormick KL, Woodside MT, Huang M, McEuen PL, Duruoz CI, Harris JS. Scanned potential microscopy of a two-dimensional electron gas Physica B: Condensed Matter. 249: 79-83. DOI: 10.1016/S0921-4526(98)00071-4 |
0.307 |
|
| 1998 |
Sciohlla G, Bajic A, Bard R, Beaulieu M, Blinov V, Borsato E, Boucham A, Boutigny D, Boyarski A, Boyce R, Britton D, Brochu B, Bronzini F, Broomer B, Buccheri A, ... ... Harris J, et al. The BaBar drift chamber Nuclear Instruments and Methods in Physics Research, Section a: Accelerators, Spectrometers, Detectors and Associated Equipment. 419: 310-314. DOI: 10.1016/S0168-9002(98)00804-3 |
0.307 |
|
| 1998 |
Ueda T, Huang T, Spruytte S, Lee H, Yuri M, Itoh K, Baba T, Harris J. Vapor phase epitaxy growth of GaN on pulsed laser deposited ZnO buffer layer Journal of Crystal Growth. 187: 340-346. DOI: 10.1016/S0022-0248(97)00886-5 |
0.805 |
|
| 1997 |
Sugihwo F, Larson MC, Harris JS. 30nm Wavelength Tunable Vertical Cavity Lasers The Japan Society of Applied Physics. 1997: 174-175. DOI: 10.7567/Ssdm.1997.C-3-4 |
0.348 |
|
| 1997 |
Trezza JA, Powell JS, Harris JS. Zero chirp asymmetric Fabry-Perot electroabsorption modulator using coupled quantum wells Ieee Photonics Technology Letters. 9: 330-332. DOI: 10.1109/68.556063 |
0.361 |
|
| 1997 |
Vodopyanov KL, Chazapis V, Phillips CC, Sung B, Harris JS. Intersubband absorption saturation study of narrow III - V multiple quantum wells in the spectral range Semiconductor Science and Technology. 12: 708-714. DOI: 10.1088/0268-1242/12/6/011 |
0.401 |
|
| 1997 |
Paldus BA, Harris JS, Martin J, Xie J, Zare RN. Laser diode cavity ring-down spectroscopy using acousto-optic modulator stabilization Journal of Applied Physics. 82: 3199-3204. DOI: 10.1063/1.365688 |
0.339 |
|
| 1997 |
Wu W, Tucker JR, Solomon GS, Harris JS. Atom-resolved scanning tunneling microscopy of vertically ordered InAs quantum dots Applied Physics Letters. 71: 1083-1085. DOI: 10.1063/1.120553 |
0.356 |
|
| 1997 |
Sugihwo F, Larson MC, Harris JS. Low threshold continuously tunable vertical-cavity surface-emitting lasers with 19.1 nm wavelength range Applied Physics Letters. 70: 547-549. DOI: 10.1063/1.119264 |
0.398 |
|
| 1997 |
Lin C, Sugihwo F, Harris JS. Laser parameter extraction for tunable vertical cavity lasers Electronics Letters. 33: 1705-1707. DOI: 10.1049/El:19971150 |
0.367 |
|
| 1997 |
Sung B, Chui H, Fejer M, Harris J. Near-infrared wavelength intersubband transitions in high indium content InGaAs/AlAs quantum wells grown on GaAs Electronics Letters. 33: 818. DOI: 10.1049/El:19970514 |
0.361 |
|
| 1997 |
Solomon GS, Komarov S, Harris JS, Yamamoto Y. Increased size uniformity through vertical quantum dot columns Journal of Crystal Growth. 707-712. DOI: 10.1016/S0022-0248(96)01227-4 |
0.367 |
|
| 1997 |
Okada Y, Harris JS, Sutoh A, Kawabe M. Growth of abrupt {GaAs}/{Ge} heterointerfaces by atomic hydrogen-assisted molecular beam epitaxy Journal of Crystal Growth. 1039-1044. DOI: 10.1016/S0022-0248(96)01026-3 |
0.369 |
|
| 1997 |
Lee H, Yuri M, Ueda T, Harris JS, Sin K. Growth of thick gan films on rf sputtered ain buffer layer by hydride vapor phase epitaxy Journal of Electronic Materials. 26: 898-902. DOI: 10.1007/S11664-997-0271-9 |
0.345 |
|
| 1996 |
Tuncel E, Oberman DB, Lee H, Ueda T, Harris JS. Optical Properties and Morphology of Gan Grown by MBE on Sapphire Substrates Mrs Proceedings. 423. DOI: 10.1557/Proc-423-681 |
0.336 |
|
| 1996 |
Lee H, Yuri M, Ueda T, Harris JS. Thermodynamic Analysis and Growth Characterization of thick GaN films grown by Chloride VPE using GaCl3/N2 and NH3/N2 Mrs Proceedings. 423. DOI: 10.1557/Proc-423-233 |
0.361 |
|
| 1996 |
Huang TF, Tuncel E, Yeo JS, Harris JS. Growth of Epitaxial Gan Films Using Zno Buffer Layer by Pulsed Laser Deposition Mrs Proceedings. 421. DOI: 10.1557/Proc-421-389 |
0.375 |
|
| 1996 |
Shimbo BN, Komarov S, Vartanian BJ, Okada Y, Harris JS. Atomic Force Microscope Chemically Induced Direct Processing Mrs Proceedings. 421. DOI: 10.1557/Proc-421-299 |
0.356 |
|
| 1996 |
Yuri M, Ueda T, Lee H, Itoh K, Baba T, Harris J. Vapor Phase Epitaxy of GaN Using Gallium Tri-Chloride and Ammonia Mrs Proceedings. 421. DOI: 10.1557/Proc-421-195 |
0.366 |
|
| 1996 |
Ueda T, Yuri M, Lee H, Harris JS, Baba T. Photoluminescence Study of Chloride Vpe-Grown Gan Mrs Proceedings. 421. DOI: 10.1557/Proc-421-189 |
0.353 |
|
| 1996 |
Trezza J, Morf M, Harris J. Creation and optimization of vertical-cavity X-modulators Ieee Journal of Quantum Electronics. 32: 53-60. DOI: 10.1109/3.481920 |
0.321 |
|
| 1996 |
Duruöz CI, Clarke RM, Marcus CM, Harris JS. Switching and hysteresis in quantum dot arrays Nanotechnology. 7: 372-375. DOI: 10.1088/0957-4484/7/4/011 |
0.354 |
|
| 1996 |
Okada Y, Harris JS, Götz W. Deep level defects in GaAs on Si substrates grown by atomic hydrogen‐assisted molecular beam epitaxy Journal of Applied Physics. 80: 4770-4772. DOI: 10.1063/1.363415 |
0.389 |
|
| 1996 |
Kirillov D, Lee H, Harris JS. Raman scattering study of GaN films Journal of Applied Physics. 80: 4058-4062. DOI: 10.1063/1.363367 |
0.307 |
|
| 1996 |
Solomon GS, Larson MC, Harris JS. Electroluminescence in vertically aligned quantum dot multilayer light‐emitting diodes fabricating by growth‐induced islanding Applied Physics Letters. 69: 1897-1899. DOI: 10.1063/1.117614 |
0.389 |
|
| 1996 |
Matsumoto K, Ishii M, Segawa K, Oka Y, Vartanian BJ, Harris JS. Room temperature operation of a single electron transistor made by the scanning tunneling microscope nanooxidation process for the TiOx/Ti system Applied Physics Letters. 68: 34-36. DOI: 10.1063/1.116747 |
0.304 |
|
| 1996 |
Larson MC, Harris JS. Wide and continuous wavelength tuning in a vertical‐cavity surface‐emitting laser using a micromachined deformable‐membrane mirror Applied Physics Letters. 68: 891-893. DOI: 10.1063/1.116221 |
0.401 |
|
| 1996 |
Sung B, Chui HC, Martinet EL, Harris JS. Control of quasi‐bound states by electron Bragg mirrors in GaAs/Al0.3Ga0.7As quantum wells Applied Physics Letters. 68: 2720-2722. DOI: 10.1063/1.115576 |
0.345 |
|
| 1996 |
Lee H, Harris JS. Vapor phase epitaxy of GaN usingGaCl3N2 andNH3N2 Journal of Crystal Growth. 169: 689-696. DOI: 10.1016/S0022-0248(96)00472-1 |
0.359 |
|
| 1996 |
Hung CY, Weckwerth MV, Marshall AF, Pao YC, Harris JS. Observation of superstructure in high-quality pseudomorphic films of NiAl grown on GaAs Journal of Crystal Growth. 169: 201-208. DOI: 10.1016/S0022-0248(96)00401-0 |
0.386 |
|
| 1996 |
Pilling G, Cobden DH, McEuen PL, Duruöz CI, Harris JS. Intrinsic bistability in nonlinear transport through a submicron lateral barrier Surface Science. 361: 652-655. DOI: 10.1016/0039-6028(96)00492-X |
0.302 |
|
| 1996 |
Lee H, Oberman DB, Harris JS. Reactive ion etching of gallium nitride films Journal of Electronic Materials. 25: 835-837. DOI: 10.1007/Bf02666645 |
0.307 |
|
| 1995 |
Yeo JS, Youden KE, Huang TF, Hesselink L, Harris JS. Homoepitaxial and Heteroepitaxial Growth of Sr0.61Ba0.39Nb2O6 Thin Films by Pulsed Laser Deposition Mrs Proceedings. 401. DOI: 10.1557/Proc-401-225 |
0.347 |
|
| 1995 |
Hung C, Weckwerth M, Visokay M, Pao Y, Harris J. Growth of GaAS and InAlAs on High Quality, Epitaxial, NiAl Metal Film Mrs Proceedings. 399. DOI: 10.1557/Proc-399-537 |
0.382 |
|
| 1995 |
Okada Y, Harris JS, Sutoh A, Kawabe M. GaAs-on-Ge Heteroepitaxy by Atomic Hydrogen-Assisted Molecular Beam Epitaxy (H-MBE) Mrs Proceedings. 399. DOI: 10.1557/Proc-399-203 |
0.351 |
|
| 1995 |
Huang TF, Youden KE, Schwyn Thöny S, Hesselink L, Harris JS. Epitaxial Multilayers of (Sr,Ba)Nb2O6 and Conducting Films on (001) Mgo Substrates Mrs Proceedings. 388. DOI: 10.1557/Proc-388-79 |
0.333 |
|
| 1995 |
Götz W, Oberman DB, Harris JS. Defect Studies in n-Type GaN Grown by Molecular Beam Epitaxy Mrs Proceedings. 378. DOI: 10.1557/Proc-378-527 |
0.361 |
|
| 1995 |
Eldredge JW, Matney KM, Goorsky MS, Chui HC, Harris JS. Effect of substrate miscut on the structural properties of InGaAs linear graded buffer layers grown by molecular-beam epitaxy on GaAs Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 13: 689-691. DOI: 10.1116/1.588136 |
0.33 |
|
| 1995 |
Larson MC, Harris JS. Broadly-tunable resonant-cavity light-emitting diode Ieee Photonics Technology Letters. 7: 1267-1269. DOI: 10.1109/68.473467 |
0.343 |
|
| 1995 |
Larson MC, Pezeshki B, Harris JS. Vertical coupled-cavity microinterferometer on GaAs with deformable-membrane top mirror Ieee Photonics Technology Letters. 7: 382-384. DOI: 10.1109/68.376809 |
0.347 |
|
| 1995 |
Eng LE, Toh K, Bacher K, Harris JS, Chang-Hasnain CJ. Periodic mode shift in vertical cavities grown by molecular beam epitaxy Ieee Photonics Technology Letters. 7: 235-237. DOI: 10.1109/68.372731 |
0.362 |
|
| 1995 |
Eng LE, Bacher K, Yuen W, Harris JS, Chang-Hasnain CJ. Multiple-wavelength vertical cavity laser arrays on patterned substrates Ieee Journal of Selected Topics in Quantum Electronics. 1: 624-628. DOI: 10.1109/2944.401250 |
0.398 |
|
| 1995 |
Larson MC, Harris JS. Broadly tunable resonant‐cavity light emission Applied Physics Letters. 67: 590-592. DOI: 10.1063/1.115398 |
0.394 |
|
| 1995 |
Lee H, Oberman DB, Harris JS. Reactive ion etching of GaN using CHF3/Ar and C2ClF5/Ar plasmas Applied Physics Letters. 67: 1754-1756. DOI: 10.1063/1.115039 |
0.327 |
|
| 1995 |
Solomon GS, Trezza JA, Harris JS. Substrate temperature and monolayer coverage effects on epitaxial ordering of InAs and InGaAs islands on GaAs Applied Physics Letters. 66: 991-993. DOI: 10.1063/1.113822 |
0.359 |
|
| 1995 |
Solomon GS, Trezza JA, Harris JS. Effects of monolayer coverage, flux ratio, and growth rate on the island density of InAs islands on GaAs Applied Physics Letters. 66: 3161-3163. DOI: 10.1063/1.113709 |
0.302 |
|
| 1995 |
Chui HC, Woods GL, Fejer MM, Martinet EL, Harris JS. Tunable mid‐infrared generation by difference frequency mixing of diode laser wavelengths in intersubband InGaAs/AlAs quantum wells Applied Physics Letters. 66: 265-267. DOI: 10.1063/1.113512 |
0.391 |
|
| 1995 |
Eng LE, Bacher K, Yuen W, Larson M, Ding G, Harris JS, Chang-Hasnain CJ. Wavelength shift in vertical cavity laser arrays on a patterned substrate Electronics Letters. 31: 562-563. DOI: 10.1049/El:19950368 |
0.41 |
|
| 1995 |
Weckwerth M, Hung C, Pao Y, Harris J. Epitaxial growth of thick pseudomorphic NiAl metal films on GaAs by migration enhanced epitaxy Journal of Crystal Growth. 150: 1150-1153. DOI: 10.1016/0022-0248(95)80119-W |
0.312 |
|
| 1995 |
Oberman D, Lee H, Götz W, Harris J. Molecular beam epitaxy of gallium nitride by electron cyclotron resonance plasma and hydrogen azide Journal of Crystal Growth. 150: 912-915. DOI: 10.1016/0022-0248(95)80072-K |
0.352 |
|
| 1994 |
Youden K, Schwyn Thöny S, Hesselink L, Harris J. Pulsed Laser Deposition of Epitaxial Sr0.61Ba0.39Nb2O6 Thin Films for Waveguide Applications Mrs Proceedings. 361. DOI: 10.1557/Proc-361-173 |
0.313 |
|
| 1994 |
Ito H, Harris JS. Influence of dislocations on the threshold current density of AlGaAs/GaAs/InGaAs strained quantum-well lasers Japanese Journal of Applied Physics. 33: 6516-6517. DOI: 10.1143/Jjap.33.6516 |
0.37 |
|
| 1994 |
Carnahan RE, Martin KP, Higgins RJ, Park BG, Wolak E, Lear KL, Harris JS. Gamma -X intervalley tunnelling in a GaAs/AlAs resonant tunnelling diode under uniaxial stress Semiconductor Science and Technology. 9: 500-503. DOI: 10.1088/0268-1242/9/5S/027 |
0.309 |
|
| 1994 |
Marcus CM, Clarke RM, Chan IH, Duruoz CI, Harris JS. Phase-breaking rates from conductance fluctuations in a quantum dot Semiconductor Science and Technology. 9: 1897-1901. DOI: 10.1088/0268-1242/9/11S/007 |
0.328 |
|
| 1994 |
Knall J, Romano LT, Biegelsen DK, Bringans RD, Chui HC, Harris JS, Treat DW, Bour DP. The use of graded InGaAs layers and patterned substrates to remove threading dislocations from GaAs on Si Journal of Applied Physics. 76: 2697-2702. DOI: 10.1063/1.357572 |
0.319 |
|
| 1994 |
Schwyn Thöny S, Youden KE, Harris JS, Hesselink L. Growth of epitaxial strontium barium niobate thin films by pulsed laser deposition Applied Physics Letters. 65: 2018-2020. DOI: 10.1063/1.112780 |
0.315 |
|
| 1994 |
Martinet EL, Chui HC, Woods GL, Fejer MM, Harris JS, Rella CA, Richman BA, Schwettman HA. Short wavelength (5.36-1.85 μm) nonlinear spectroscopy of coupled InGaAs/AlAs intersubband quantum wells Applied Physics Letters. 65: 2630-2632. DOI: 10.1063/1.112585 |
0.392 |
|
| 1994 |
Carnahan RE, Maldonado MA, Martin KP, Higgins RJ, Van Der Wagt JPA, Harris JS. Observation of resonant tunneling through localized continuum states in electron wave interference diodes Applied Physics Letters. 64: 2403-2405. DOI: 10.1063/1.111604 |
0.303 |
|
| 1994 |
Chui HC, Martinet EL, Woods GL, Fejer MM, Harris JS, Rella CA, Richman BI, Schwettman HA. Doubly resonant second harmonic generation of 2.0 μm light in coupled InGaAs/AlAs quantum wells Applied Physics Letters. 64: 3365-3367. DOI: 10.1063/1.111276 |
0.418 |
|
| 1994 |
Chui HC, Martinet EL, Fejer MM, Harris JS. Short wavelength intersubband transitions in InGaAs/AlGaAs quantum wells grown on GaAs Applied Physics Letters. 64: 736-738. DOI: 10.1063/1.111050 |
0.369 |
|
| 1994 |
Schmerge JF, Lewellen JW, Harris J, Huang YC, Feinstein J, Pantell RH. An accelerator/wiggler for high efficiency FEL operation Nuclear Inst. and Methods in Physics Research, A. 341: 335-340. DOI: 10.1016/0168-9002(94)90377-8 |
0.314 |
|
| 1993 |
Nasserbakht G, Adkisson J, Wooley B, Harris J, Kamins T. A monolithic GaAs-on-Si receiver front end for optical interconnect systems Ieee Journal of Solid-State Circuits. 28: 622-630. DOI: 10.1109/4.217976 |
0.344 |
|
| 1993 |
Trezza JA, Larson MC, Lord SM, Harris JS. Low‐voltage, low‐chirp, absorptively bistable transmission modulators using type‐IIA and type‐IIB In0.3Ga0.7As/Al0.33Ga0.67As/ In0.15Ga0.85As asymmetric coupled quantum wells Journal of Applied Physics. 74: 6495-6502. DOI: 10.1063/1.355138 |
0.327 |
|
| 1993 |
Trezza JA, Larson MC, Harris JS. Zero chirp quantum well asymmetric Fabry–Perot reflection modulators operating beyond the matching condition Journal of Applied Physics. 74: 7061-7066. DOI: 10.1063/1.355020 |
0.34 |
|
| 1993 |
Trezza JA, Larson MC, Lord SM, Harris JS. Large, low‐voltage absorption changes and absorption bistability in GaAs/AlGaAs/InGaAs asymmetric quantum wells Journal of Applied Physics. 74: 1972-1978. DOI: 10.1063/1.354756 |
0.392 |
|
| 1993 |
Lord SM, Roos G, Harris JS, Johnson NM. Hydrogen passivation of nonradiative defects in InGaAs/AlxGa1−xAs quantum wells Journal of Applied Physics. 73: 740-748. DOI: 10.1063/1.353331 |
0.37 |
|
| 1993 |
Chui HC, Lord SM, Martinet E, Fejer MM, Harris JS. Intersubband transitions in high indium content InGaAs/AlGaAs quantum wells Applied Physics Letters. 63: 364-366. DOI: 10.1063/1.110044 |
0.392 |
|
| 1993 |
Trezza JA, Pezeshki B, Larson MC, Lord SM, Harris JS. High contrast asymmetric Fabry–Perot electro‐absorption modulator with zero phase change Applied Physics Letters. 63: 452-454. DOI: 10.1063/1.110021 |
0.341 |
|
| 1993 |
Lord SM, Trezza JA, Larson MC, Pezeshki B, Harris JS. 1.3 μm electroabsorption reflection modulators on GaAs Applied Physics Letters. 63: 806-808. DOI: 10.1063/1.109914 |
0.398 |
|
| 1993 |
Morse JD, Mariella RP, Adkisson JW, Anderson GD, Harris JS, Dutton RW. Picosecond photoconductivity in polycrystalline gallium arsenide grown by molecular beam epitaxy Applied Physics Letters. 62: 1382-1384. DOI: 10.1063/1.108686 |
0.383 |
|
| 1993 |
Schmerge JF, Pantell RH, Huang YC, Harris J, Feinstein J, Zitelli L, Yan ZQ, Lewellen JW. High efficiency FEL using muwave reacceleration Nuclear Inst. and Methods in Physics Research, A. 331: 558-565. DOI: 10.1016/0168-9002(93)90110-4 |
0.331 |
|
| 1993 |
Solomon G, Roos G, Harris J. The effect of Si planar doping on DX centers in Al0.26Ga0.74As Journal of Crystal Growth. 127: 737-741. DOI: 10.1016/0022-0248(93)90723-A |
0.32 |
|
| 1992 |
Shoop BL, Pezeshki B, Goodman JW, Harris JS. Noninterferometric optical subtraction using reflection-electroabsorption modulators. Optics Letters. 17: 58-60. PMID 19784229 DOI: 10.1364/Ol.17.000058 |
0.319 |
|
| 1992 |
Lord SM, Pezeshki B, Marshall AF, Harris JS, Fernandez R, Harwit A. Graded Buffer Layers for Molecular Beam Epitaxial Growth of High in Content InGaAs on GaAs for Optoelectronics Mrs Proceedings. 281. DOI: 10.1557/Proc-281-221 |
0.432 |
|
| 1992 |
Lord SM, Roos G, Pezeshki B, Harris JS, Johnson NM. Hydrogen Passivation of Defects in InGaAs/AlxGal-xAs Quantum Wells Mrs Proceedings. 262. DOI: 10.1557/Proc-262-881 |
0.377 |
|
| 1992 |
Roos G, Johnsons NM, Herring C, Harris JS. Hydrogen Passivation and Reactivation of DX Centers in Se-Doped and Si-Doped AlGaAs - - A Comparison Mrs Proceedings. 262. DOI: 10.1557/Proc-262-419 |
0.309 |
|
| 1992 |
Shoop BL, Pezeshki B, Goodman JW, Harris JS. Laser-power stabilization using a quantum-well modulator Ieee Photonics Technology Letters. 4: 136-139. DOI: 10.1109/68.122340 |
0.379 |
|
| 1992 |
Pao Y-, Harris JS. Low-conductance drain (LCD) design of InAlAs/InGaAs/InP HEMT's Ieee Electron Device Letters. 13: 535-537. DOI: 10.1109/55.192824 |
0.301 |
|
| 1992 |
Ito H, Nakajima O, Furuta T, Harris JS. Influence of dislocations on the DC characteristics of AlGaAs/GaAs heterojunction bipolar transistors Ieee Electron Device Letters. 13: 232-234. DOI: 10.1109/55.145037 |
0.323 |
|
| 1992 |
Fu W, Harris J, Binder R, Koch S, Klem J, Olbright G. Nonlinear optical properties and ultrafast response of GaAs-AlAs type-II quantum wells Ieee Journal of Quantum Electronics. 28: 2404-2415. DOI: 10.1109/3.159547 |
0.32 |
|
| 1992 |
Liu W, Harris JS. Diode ideality factor for surface recombination current in AlGaAs/GaAs heterojunction bipolar transistors Ieee Transactions On Electron Devices. 39: 2726-2732. DOI: 10.1109/16.168749 |
0.322 |
|
| 1992 |
Pezeshki B, Lord SM, Boykin TB, Harris JS. GaAs/AlAs quantum wells for electroabsorption modulators Applied Physics Letters. 60: 2779-2781. DOI: 10.1109/16.163496 |
0.406 |
|
| 1992 |
Liu W, Costa D, Harris JS. Current gain of graded AlGaAs/GaAs heterojunction bipolar transistors with and without a base quasi-electric field Ieee Transactions On Electron Devices. 39: 2422-2429. DOI: 10.1109/16.163447 |
0.318 |
|
| 1992 |
Liu W, Harris JS. Effects of replacing a portion of the AlGaAs base-emitter junction of heterojunction bipolar transistors by GaAs International Journal of Electronics. 72: 401-408. DOI: 10.1080/00207219208925581 |
0.313 |
|
| 1992 |
Fu WS, Olbright GR, Klem JF, Harris JS. Optical gain and ultrafast nonlinear response in GaAs/AlAs type-II quantum wells Applied Physics Letters. 61: 1661-1663. DOI: 10.1063/1.108443 |
0.353 |
|
| 1992 |
Bacher K, Pezeshki B, Lord SM, Harris JS. Molecular beam epitaxy growth of vertical cavity optical devices with in situ corrections Applied Physics Letters. 61: 1387-1389. DOI: 10.1063/1.107546 |
0.379 |
|
| 1992 |
Lord SM, Roos G, Pezeshki B, Harris JS, Johnson NM. Enhancement of photoluminescence intensity in InGaAs/AlxGa1−xAs quantum wells by hydrogenation Applied Physics Letters. 60: 2276-2278. DOI: 10.1063/1.107053 |
0.366 |
|
| 1992 |
Yamada N, Harris JS. Strained InGaAs/GaAs single quantum well lasers with saturable absorbers fabricated by quantum well intermixing Applied Physics Letters. 60: 2463-2465. DOI: 10.1063/1.106934 |
0.409 |
|
| 1992 |
Takigawa S, Bacher K, Aronson LB, Harris JS. Low threshold current grating‐coupled surface‐emitting strained‐InGaAs single quantum well laser with GaAs optical confinement structure Applied Physics Letters. 60: 265-267. DOI: 10.1063/1.106680 |
0.426 |
|
| 1992 |
Pezeshki B, Williams GA, Harris JS. Optical phase modulator utilizing electroabsorption in a Fabry–Perot cavity Applied Physics Letters. 60: 1061-1063. DOI: 10.1063/1.106444 |
0.336 |
|
| 1992 |
Lord SM, Pezeshki B, Harris JS. Investigation of high In content InGaAs quantum wells grown on GaAs by molecular beam epitaxy Electronics Letters. 28: 1193-1195. DOI: 10.1049/El:19920754 |
0.396 |
|
| 1992 |
Ito H, Harris JS. InGaAs double heterojunction bipolar transistors grown on GaAs substrates Electronics Letters. 28: 655-656. DOI: 10.1049/El:19920414 |
0.372 |
|
| 1992 |
Huang YC, Schmerge J, Harris J, Gallerano GP, Pantell RH, Feinstein J. Compact far-IR FEL design Nuclear Instruments & Methods in Physics Research Section a-Accelerators Spectrometers Detectors and Associated Equipment. 318: 765-771. DOI: 10.1016/0168-9002(92)91155-3 |
0.342 |
|
| 1992 |
Liu W, Harris JS. Parasitic conduction current in the passivation ledge of AlGaAs/GaAs heterojunction bipolar transistors Solid-State Electronics. 35: 891-895. DOI: 10.1016/0038-1101(92)90315-4 |
0.317 |
|
| 1992 |
Takigawa S, Bacher K, Aronson LB, Harris JS. Design and performance of a low-threshold-current grating-coupled surface-emitting laser Solid-State Electronics. 35: 1241-1245. DOI: 10.1016/0038-1101(92)90156-7 |
0.411 |
|
| 1991 |
Solomon GS, Roos G, Muñoz-Merino E, Harris JS. The Effect of Si Planar Doping on DX Centers in Al.20Ga.74As Mrs Proceedings. 240. DOI: 10.1557/Proc-240-865 |
0.309 |
|
| 1991 |
Roos G, Johnson NM, Pao YC, Harris JS, Herring C. Hydrogen Passivation of Si and Be Dopants in InAlAs Mrs Proceedings. 240. DOI: 10.1557/Proc-240-667 |
0.329 |
|
| 1991 |
Pezeshki B, Apte RB, Lord SM, Harris JS. Quantum well modulators for optical beam steering applications Ieee Photonics Technology Letters. 3: 790-792. DOI: 10.1109/68.84494 |
0.376 |
|
| 1991 |
Park BG, Wolak E, Harris JS. Effect of high current density and doping concentration on the characteristics of GaAs/AlAs vertically integrated resonant tunneling diodes Journal of Applied Physics. 70: 7141-7148. DOI: 10.1063/1.349798 |
0.339 |
|
| 1991 |
Wolak E, Özbay E, Park BG, Diamond SK, Bloom DM, Harris JS. The design of GaAs/AlAs resonant tunneling diodes with peak current densities over 2×105 a cm-2 Journal of Applied Physics. 69: 3345-3350. DOI: 10.1063/1.348563 |
0.346 |
|
| 1991 |
Yamada N, Roos G, Harris JS. Threshold reduction in strained InGaAs single quantum well lasers by rapid thermal annealing Applied Physics Letters. 59: 1040-1042. DOI: 10.1063/1.106338 |
0.442 |
|
| 1991 |
Roos G, Johnson NM, Herring C, Harris JS. Thermal dissociation energy of the Si‐H complex inn‐type GaAs Applied Physics Letters. 59: 461-463. DOI: 10.1063/1.105436 |
0.301 |
|
| 1991 |
Liu W, Costa D, Harris J. Comparison of the effects of surface passivation and base quasi‐electric fields on the current gain of AlGaAs/GaAs heterojunction bipolar transistors grown on GaAs and Si substrates Applied Physics Letters. 59: 691-693. DOI: 10.1063/1.105367 |
0.351 |
|
| 1991 |
Pezeshki B, Lord SM, Harris JS. Electroabsorptive modulators in InGaAs/AlGaAs Applied Physics Letters. 59: 888-890. DOI: 10.1063/1.105266 |
0.339 |
|
| 1991 |
Rascol JJL, Martin KP, Carnahan RE, Higgins RJ, Cury LA, Portal JC, Park BG, Wolak E, Lear KL, Harris JS. Influence of ballistic electrons on the device characteristics of vertically integrated resonant tunneling diodes Applied Physics Letters. 58: 1482-1484. DOI: 10.1063/1.105203 |
0.344 |
|
| 1991 |
Yoo SJB, Fejer MM, Byer RL, Harris JS. Second‐order susceptibility in asymmetric quantum wells and its control by proton bombardment Applied Physics Letters. 58: 1724-1726. DOI: 10.1063/1.105121 |
0.35 |
|
| 1991 |
Pezeshki B, Thomas D, Harris JS. Novel cavity design for high reflectivity changes in a normally off electroabsorption modulator Applied Physics Letters. 58: 813-815. DOI: 10.1063/1.104497 |
0.335 |
|
| 1991 |
Pezeshki P, Lord S, Boykin T, Shoop B, Harris J. AlGaAs/AlAs QW modulator for 6328 A operation Electronics Letters. 27: 1971. DOI: 10.1049/El:19911221 |
0.353 |
|
| 1991 |
Kim JH, Bozovic I, Harris JS, Lee WY, Eom CB, Geballe TH, Hellman ES. Plasmons in high-temperature superconductors Physica C: Superconductivity and Its Applications. 185: 1019-1020. DOI: 10.1016/0921-4534(91)91733-K |
0.304 |
|
| 1991 |
Rascol JJL, Martin KP, Carnahan RE, Higgins RJ, Cury L, Portal JC, Park BG, Wolak E, Lear KL, Harris JS. Ballistic electron contributions in vertically integrated resonant tunneling diodes Superlattices and Microstructures. 10: 175-178. DOI: 10.1016/0749-6036(91)90225-G |
0.337 |
|
| 1991 |
Liu WU, Costa D, Harris JS. Theoretical comparison of base bulk recombination current and surface recombination current of a mesa AlGaAs/GaAs heterojunction bipolar transistor Solid-State Electronics. 34: 1119-1123. DOI: 10.1016/0038-1101(91)90109-C |
0.31 |
|
| 1991 |
Eckstein JN, Bozovic I, Schlom DG, Harris JS. Growth of superconducting Bi2Sr2Can-1CunOx thin films by atomically layered epitaxy Journal of Crystal Growth. 111: 973-977. DOI: 10.1016/0022-0248(91)91117-S |
0.476 |
|
| 1991 |
Pao Y, Harris JS. Molecular beam epitaxial growth and structural design of In0.52Al0.48As/In0.53Ga0.47As/InP HEMTs Journal of Crystal Growth. 111: 489-494. DOI: 10.1016/0022-0248(91)91026-7 |
0.339 |
|
| 1991 |
Lee WS, Yoffe GW, Schlom DG, Harris JS. Accurate measurement of MBE substrate temperature Journal of Crystal Growth. 111: 131-135. DOI: 10.1016/0022-0248(91)90960-D |
0.459 |
|
| 1990 |
Gary CK, Fisher AS, Pantell RH, Harris J, Piestrup MA. Channeling of electrons in Si produces intense quasimonochromatic, tunable, picosecond x-ray bursts. Physical Review. B, Condensed Matter. 42: 7-14. PMID 9994503 DOI: 10.1103/Physrevb.42.7 |
0.306 |
|
| 1990 |
Kojima K, Schlom DG, Kuroda K, Tanioku M, Hamanaka K, Eckstein JN, Harris JS. Superstructure in Thin Films of Bi-Based Compounds on MgO Japanese Journal of Applied Physics. 29: L1638-L1641. DOI: 10.1143/Jjap.29.L1638 |
0.46 |
|
| 1990 |
Harris JS. From Bloch Functions To Quantum Wells International Journal of Modern Physics B. 4: 1149-1179. DOI: 10.1142/S0217979290000577 |
0.314 |
|
| 1990 |
Pezeshki B, Thomas D, Harris JS. Large reflectivity modulation using InGaAs-GaAs Ieee Photonics Technology Letters. 2: 807-809. DOI: 10.1109/68.63228 |
0.366 |
|
| 1990 |
Hill DG, Lee WS, Ma T, Harris JS. Uniform, High-Gain AlGaAs/In<inf>0.05</inf>Ga<inf>0.95</inf>As/GaAs P-n-p Heterojunction Bipolar Transistors by Dual Selective Etch Process Ieee Electron Device Letters. 11: 425-427. DOI: 10.1109/55.62984 |
0.345 |
|
| 1990 |
Eckstein JN, Bozovic I, Schlom DG, Harris JS. Growth of untwinned Bi2Sr2Ca2Cu 3Ox thin films by atomically layered epitaxy Applied Physics Letters. 57: 1049-1051. DOI: 10.1063/1.104278 |
0.472 |
|
| 1990 |
Eckstein JN, Bozovic I, Von Dessonneck KE, Schlom DG, Harris JS, Baumann SM. Atomically layered heteroepitaxial growth of single-crystal films of superconducting Bi2Sr2Ca2Cu3O x Applied Physics Letters. 57: 931-933. DOI: 10.1063/1.104270 |
0.479 |
|
| 1990 |
Pezeshki B, Thomas D, Harris JS. Wannier–Stark localization in a strained InGaAs/GaAs superlattice Applied Physics Letters. 57: 2116-2117. DOI: 10.1063/1.103915 |
0.328 |
|
| 1990 |
Cheng P, Harris JS. Improved design of AlAs/GaAs resonant tunneling diodes Applied Physics Letters. 56: 1676-1678. DOI: 10.1063/1.103114 |
0.345 |
|
| 1990 |
Allee DR, Chou SY, Harris JS, Pease RFW. Resonant tunneling of 1-dimensional electrons across an array of 3-dimensionally confined potential wells Superlattices and Microstructures. 7: 131-134. DOI: 10.1016/0749-6036(90)90125-Q |
0.349 |
|
| 1990 |
Schlom DG, Marshall AF, Sizemore JT, Chen ZJ, Eckstein JN, Bozovic I, Von Dessonneck KE, Harris JS, Bravman JC. Molecular beam epitaxial growth of layered Bi-Sr-Ca-Cu-O compounds Journal of Crystal Growth. 102: 361-375. DOI: 10.1016/0022-0248(90)90393-Y |
0.476 |
|
| 1989 |
Hellman ES, Schlom DG, Marshall AF, Streiffer SK, Harris JS, Beasley MR, Bravman JC, Geballe TH, Eckstein JN, Webb C. Phase characterization of dysprosium barium copper oxide thin films grown on strontium titanate by molecular beam epitaxy Journal of Materials Research. 4: 476-495. DOI: 10.1557/Jmr.1989.0476 |
0.48 |
|
| 1989 |
Ma T, Lee W-, Adkisson JW, Harris JS. Effect of bulk recombination current on the current gain of GaAs/AlGaAs heterojunction bipolar transistors in GaAs-on-Si Ieee Electron Device Letters. 10: 458-460. DOI: 10.1109/55.43099 |
0.339 |
|
| 1989 |
Lee W-, Ueda D, Ma T, Pao Y-, Harris JS. Effect of emitter-base spacing on the current gain of AlGaAs/GaAs heterojunction bipolar transistors Ieee Electron Device Letters. 10: 200-202. DOI: 10.1109/55.31720 |
0.327 |
|
| 1989 |
Diamond SK, Rodwell MJW, Pao YC, Özbay E, Wolak E, Bloom DM, Harris JS. Fabrication of 200-GHz fmax Resonant-Tunneling Diodes for Integrated Circuit and Microwave Applications Ieee Electron Device Letters. 10: 104-106. DOI: 10.1109/55.31683 |
0.349 |
|
| 1989 |
Lear KL, Lee WS, Harris JS. Experimental dependence of resonant tunnel diode current on accumulation layer band profiles Ieee Transactions On Electron Devices. 36: 2619. DOI: 10.1109/16.43737 |
0.321 |
|
| 1989 |
Chou SY, Allee DR, Pease RFW, Harris JS. IVB-7 Quantum Interference Devices Fabricated Using Molecular-Beam Epitaxy and Ultra-High-Resolution Electron-Beam Lithography Ieee Transactions On Electron Devices. 36: 2617-2618. DOI: 10.1109/16.43733 |
0.386 |
|
| 1989 |
Wolak E, Park BG, Lear KL, Harris JS. Variation of the spacer layer between two resonant tunneling diodes Applied Physics Letters. 55: 1871-1873. DOI: 10.1063/1.102157 |
0.393 |
|
| 1989 |
Chou SY, Allee DR, Pease RFW, Harris JS. Observation of electron resonant tunneling in a lateral dual-gate resonant tunneling field-effect transistor Applied Physics Letters. 55: 176-178. DOI: 10.1063/1.102113 |
0.379 |
|
| 1989 |
Cheng P, Harris JS. Effect of Si doping in AlAs barrier layers of AlAs‐GaAs‐AlAs double‐barrier resonant tunneling diodes Applied Physics Letters. 55: 572-574. DOI: 10.1063/1.101836 |
0.329 |
|
| 1989 |
Köhrbrück R, Munnix S, Bimberg D, Larkins EC, Harris JS. Influence of the As:Ga flux ratio on growth rate, interface quality, and impurity incorporation in AlGaAs/GaAs quantum wells grown by molecular beam epitaxy Applied Physics Letters. 54: 623-625. DOI: 10.1063/1.100898 |
0.394 |
|
| 1989 |
Munnix S, Bimberg D, Mars D, Miller J, Larkins E, Harris J. Optical properties of one- and two-component plasma in GaAs/AiGaAs n-modulation doped heterostructures Superlattices and Microstructures. 6: 369-372. DOI: 10.1016/S0749-6036(89)80003-5 |
0.415 |
|
| 1989 |
Harris J, Eckstein J, Hellmann E, Schlom D. MBE growth of high critical temperature superconductors Journal of Crystal Growth. 95: 607-616. DOI: 10.1016/0022-0248(89)90476-4 |
0.502 |
|
| 1989 |
Pao Y, Liu D, Harris J. Molecular beam epitaxy AlGaAs/GaAs grown in the presence of hydrogen Journal of Crystal Growth. 95: 305-308. DOI: 10.1016/0022-0248(89)90407-7 |
0.373 |
|
| 1988 |
Adkisson JW, Kamins TI, Koch SM, Harris JS, Rosner SJ, Nauka K, Reid GA. Growth of Gallium Arsenide on Silicon in Masked, Etched Trenches Mrs Proceedings. 116. DOI: 10.1557/Proc-116-99 |
0.389 |
|
| 1988 |
Reid G, Nauka K, Rosner S, Koch S, Harris J. Spatial Inhomogeneities of the Luminescence and Electrical Properties of Mbe Grown GaAs on Si Mrs Proceedings. 116. DOI: 10.1557/Proc-116-227 |
0.377 |
|
| 1988 |
Koch SM, Hull R, Rosner SJ, Harris JS. GaAs/Si Nucleation and Buffer Layer Growth Mrs Proceedings. 116. DOI: 10.1557/Proc-116-111 |
0.316 |
|
| 1988 |
Adkisson JW, Kamins TI, Koch SM, Harris JS, Rosner SJ, Reid GA, Nauka K. Processing and characterization of GaAs grown into recessed silicon Journal of Vacuum Science & Technology B. 6: 717-719. DOI: 10.1116/1.584354 |
0.38 |
|
| 1988 |
Hellman ES, Schlom DG, Missert N, Char K, Harris JS, Beasley MR, Kapitulnik A, Geballe TH, Eckstein JN, Weng S‐, Webb C. Molecular‐beam epitaxy and deposition of high‐Tc superconductors Journal of Vacuum Science & Technology B. 6: 799-803. DOI: 10.1116/1.584334 |
0.475 |
|
| 1988 |
De La Houssaye PR, Allee DR, Pao YC, Pease RFW, Harris JS, Schlom DG. Electron Saturation Velocity Variation in InGaAs and GaAs Channel MODFET's for Gate Lengths to 550 A Ieee Electron Device Letters. 9: 148-150. DOI: 10.1109/55.2071 |
0.457 |
|
| 1988 |
Pao YC, Ou W, Harris JS. (110)-oriented GaAs MESFETs Ieee Electron Device Letters. 9: 119-121. DOI: 10.1109/55.2061 |
0.354 |
|
| 1988 |
Chou SY, Harris JS, Pease RFW. Lateral resonant tunneling field‐effect transistor Applied Physics Letters. 52: 1982-1984. DOI: 10.1063/1.99656 |
0.324 |
|
| 1988 |
Hwang J, Shih CK, Pianetta P, Kubiak GD, Stulen RH, Dawson LR, Pao Y, Harris JS. Effect of strain on the band structure of GaAs and In0.2Ga0.8As Applied Physics Letters. 52: 308-310. DOI: 10.1063/1.99502 |
0.301 |
|
| 1988 |
Chou SY, Harris JS. Room‐temperature observation of resonant tunneling through an AlGaAs/GaAs quasiparabolic quantum well grown by molecular beam epitaxy Applied Physics Letters. 52: 1422-1424. DOI: 10.1063/1.99135 |
0.34 |
|
| 1988 |
Schlom DG, Eckstein JN, Hellman ES, Streiffer SK, Harris JS, Beasley MR, Bravman JC, Geballe TH, Webb C, von Dessonneck KE, Turner F. Molecular beam epitaxy of layered Dy‐Ba‐Cu‐O compounds Applied Physics Letters. 53: 1660-1662. DOI: 10.1063/1.100443 |
0.497 |
|
| 1988 |
Wolak E, Lear KL, Pitner PM, Hellman ES, Park BG, Weil T, Harris JS, Thomas D. Elastic scattering centers in resonant tunneling diodes Applied Physics Letters. 53: 201-203. DOI: 10.1063/1.100147 |
0.354 |
|
| 1988 |
Liu D, Zhang T, LaRue RA, Harris JS, Sigmon TW. Deep level transient spectroscopy study of GaAs surface states treated with inorganic sulfides Applied Physics Letters. 53: 1059-1061. DOI: 10.1063/1.100065 |
0.341 |
|
| 1988 |
Chou S, Wolak E, Harris J, Pease R. A lateral resonant tunneling FET Superlattices and Microstructures. 4: 181-186. DOI: 10.1016/0749-6036(88)90032-8 |
0.33 |
|
| 1987 |
Hull R, Fischer-Colbrie A, Rosner SJ, Koch SM, Harris JS. Nucleation of Gaas on Vicinal Si(100) Surfaces Mrs Proceedings. 94. DOI: 10.1557/Proc-94-25 |
0.307 |
|
| 1987 |
Harris JS, Koch SM, Rosner SJ. The Nucleation and Growth of GaAs on Si Mrs Proceedings. 91. DOI: 10.1557/Proc-91-3 |
0.333 |
|
| 1987 |
Nauka K, Reid G, Rosner S, Koch S, Harris J. Deep Electron Traps In Mbe Gaas On Si Mrs Proceedings. 91. DOI: 10.1557/Proc-91-225 |
0.367 |
|
| 1987 |
Rosner SJ, Koch SM, Harris JS. Structural Characterization of Thin, Low Temperature Films of GaAs on Si Substrates Mrs Proceedings. 91. DOI: 10.1557/Proc-91-155 |
0.357 |
|
| 1987 |
Yoffe GW, Schlom DG, Harris JS. IIIA-4 Light Modulation by Tunable Interference Filter Ieee Transactions On Electron Devices. 34: 2363. DOI: 10.1109/T-Ed.1987.23265 |
0.399 |
|
| 1987 |
Webb C, Weng S, Eckstein JN, Missert N, Char K, Schlom DG, Hellman ES, Beasley MR, Kapitulnik A, Harris JS. Growth of highTcsuperconducting thin films using molecular beam epitaxy techniques Applied Physics Letters. 51: 1191-1193. DOI: 10.1063/1.98729 |
0.481 |
|
| 1987 |
Hull R, Fischer-Colbrie A, Rosner SJ, Koch SM, Harris JS. Effect of substrate surface structure on nucleation of GaAs on Si(100) Applied Physics Letters. 51: 1723-1725. DOI: 10.1063/1.98556 |
0.325 |
|
| 1987 |
Yoffe GW, Schlom DG, Harris JS. Modulation of light by an electrically tunable multilayer interference filter Applied Physics Letters. 51: 1876-1878. DOI: 10.1063/1.98497 |
0.504 |
|
| 1987 |
Harwit A, Harris JS. Observation of Stark shifts in quantum well intersubband transitions Applied Physics Letters. 50: 685-687. DOI: 10.1063/1.98066 |
0.382 |
|
| 1987 |
Wolak E, Harwit A, Harris JS. Comment on ``Observation of a negative differential resistance due to tunneling through a single barrier into a quantum well'' [Appl. Phys. Lett. 49, 70 (1986)] Applied Physics Letters. 50: 1610-1610. DOI: 10.1063/1.97796 |
0.31 |
|
| 1987 |
Hellman E, Harris J. Polynomial kinetic energy approximation for direct-indirect heterostructures Superlattices and Microstructures. 3: 167-169. DOI: 10.1016/0749-6036(87)90052-8 |
0.324 |
|
| 1987 |
Larkins E, Hellman E, Schlom D, Harris J, Kim M, Stillman G. GaAs with very low acceptor impurity background grown by molecular beam epitaxy Journal of Crystal Growth. 81: 344-348. DOI: 10.1016/0022-0248(87)90415-5 |
0.513 |
|
| 1987 |
Koch SM, Rosner SJ, Hull R, Yoffe GW, Harris JS. The growth of GaAs on Si by MBE Journal of Crystal Growth. 81: 205-213. DOI: 10.1016/0022-0248(87)90392-7 |
0.373 |
|
| 1987 |
Hellman E, Harris J. Infra-red transmission spectroscopy of GaAs during molecular beam epitaxy Journal of Crystal Growth. 81: 38-42. DOI: 10.1016/0022-0248(87)90361-7 |
0.403 |
|
| 1986 |
Hull R, Fischer-Colbrie A, Rosner S, Koch S, Harris J. Structural Studies of Nucleation and the Initial Stages of Growth of Epitaxial Gaas on Si(100) Substrates Mrs Proceedings. 82. DOI: 10.1557/Proc-82-355 |
0.363 |
|
| 1986 |
Rosner SJ, Koch SM, Harris JS, Laderman S. Microstructure of thin layers of MBE-grown GaAs on Si substrates Mrs Proceedings. 67. DOI: 10.1557/Proc-67-77 |
0.385 |
|
| 1986 |
Koch SM, Rosner SJ, Schlom D, Harris JS. The Growth of GaAs on Si by Molecular Beam Epitaxy Mrs Proceedings. 67. DOI: 10.1557/Proc-67-37 |
0.545 |
|
| 1986 |
Larkins EC, Hellman ES, Schlom DG, Harris JS, Kim MH, Stillman GE. Reduction of the acceptor impurity background in GaAs grown by molecular beam epitaxy Applied Physics Letters. 49: 391-393. DOI: 10.1063/1.97597 |
0.509 |
|
| 1986 |
Rosner SJ, Koch SM, Harris JS. Nucleation and initial growth of GaAs on Si substrate Applied Physics Letters. 49: 1764-1766. DOI: 10.1063/1.97237 |
0.374 |
|
| 1986 |
Hull R, Rosner SJ, Koch SM, Harris JS. Atomic structure of the GaAs/Si interface Applied Physics Letters. 49: 1714-1716. DOI: 10.1063/1.97224 |
0.357 |
|
| 1986 |
Pao Y, Liu D, Lee WS, Harris JS. Effect of hydrogen on undoped and lightly Si‐doped molecular beam epitaxial GaAs layers Applied Physics Letters. 48: 1291-1293. DOI: 10.1063/1.96956 |
0.354 |
|
| 1986 |
Harwit A, Harris JS, Kapitulnik A. Calculated quasi‐eigenstates and quasi‐eigenenergies of quantum well superlattices in an applied electric field Journal of Applied Physics. 60: 3211-3213. DOI: 10.1063/1.337739 |
0.32 |
|
| 1985 |
Hellman ES, Harris JS, Hanna CB, Laughlin RB. One dimensional polaron effects and current inhomogeneities in sequential phonon emission Physica B+C. 134: 41-46. DOI: 10.1016/0378-4363(85)90318-3 |
0.301 |
|
| 1982 |
Harris JS, Miller DL, Asbeck PM. GaAs/(AlGa)As Heterojunction Bipolar Transistors The Japan Society of Applied Physics. DOI: 10.7567/Ssdm.1982.B-6-1 |
0.321 |
|
| 1982 |
Miller DL, Zehr SW, Harris JS. GaAs‐AlGaAs tunnel junctions for multigap cascade solar cells Journal of Applied Physics. 53: 744-748. DOI: 10.1063/1.329940 |
0.399 |
|
| 1980 |
Cohen MJ, Paul MD, Miller DL, Waldrop JR, Harris JS. Schottky barrier behavior in polycrystal GaAs Journal of Vacuum Science and Technology. 17: 899-903. DOI: 10.1116/1.570613 |
0.334 |
|
| 1980 |
Liu YZ, Deyhimy I, Anderson RJ, Milano RA, Cohen MJ, Harris JS, Tomasetta LR. A backside‐illuminated imaging AlGaAs/GaAs charge‐coupled device Applied Physics Letters. 37: 803-805. DOI: 10.1063/1.92087 |
0.329 |
|
| 1980 |
Kroemer H, Chien W, Harris JS, Edwall DD. Measurement of isotype heterojunction barriers by C‐V profiling Applied Physics Letters. 36: 295-297. DOI: 10.1063/1.91467 |
0.303 |
|
| 1979 |
Yang H, Shen Y, Edwall D, Miller DL, Harris JS. TP-A2 barrier height enhancement in heterojunction Schottky-barrier solar cells Ieee Transactions On Electron Devices. 27: 851-856. DOI: 10.1109/T-Ed.1980.19946 |
0.355 |
|
| 1979 |
Sahai R, Edwall DD, Harris JS. High‐efficiency AlGaAs/GaAs concentrator solar cells Applied Physics Letters. 34: 147-149. DOI: 10.1063/1.90708 |
0.33 |
|
| 1979 |
Garne CM, Su FCY, Shen YD, Lee CS, Pearso GL, Spicer FWE, Edwall DD, Miller D, Harris JS. Interface studies of AlxGa1−xAs‐GaAs heterojunctions Journal of Applied Physics. 50: 3383-3389. DOI: 10.1063/1.326329 |
0.336 |
|
| 1978 |
Deyhimy I, Harris JS, Eden RC, Edwall DD, Anderson SJ, Bubulac LO. GaAs charge‐coupled devices Applied Physics Letters. 32: 383-385. DOI: 10.1063/1.90062 |
0.31 |
|
| 1977 |
Sahai R, Harris JS, Edwall DD, Eisen FH. Growth and evaluation of lpe graded composition AlxGa1−xAs layers for high efficiency graded bandgap solar cells Journal of Electronic Materials. 6: 645-658. DOI: 10.1007/Bf02660342 |
0.31 |
|
| 1975 |
Waldrop JR, Harris JS. Potential profiling across semiconductor junctions by Auger electron spectroscopy in the scanning electron microscope Journal of Applied Physics. 46: 5214-5217. DOI: 10.1063/1.321587 |
0.307 |
|
| 1972 |
Longo J, Harris J, Gertner E, Chu J. Improved surface quality of solution grown GaAs and Pb1−xSnxTe epitaxial layers: A new technique Journal of Crystal Growth. 15: 107-116. DOI: 10.1016/0022-0248(72)90131-5 |
0.343 |
|
| 1969 |
Harris JS, Nannichi Y, Pearson GL, Day GF. Ohmic Contacts to Solution‐Grown Gallium Arsenide Journal of Applied Physics. 40: 4575-4581. DOI: 10.1063/1.1657234 |
0.311 |
|
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