Seth R. Bank, Ph.D. - Publications

Affiliations: 
2006 University of Texas at Austin, Austin, Texas, U.S.A. 
Website:
http://www.ece.utexas.edu/people/faculty/seth-bank

140 high-probability publications. We are testing a new system for linking publications to authors. You can help! If you notice any inaccuracies, please sign in and mark papers as correct or incorrect matches. If you identify any major omissions or other inaccuracies in the publication list, please let us know.

Year Citation  Score
2020 Zhong W, Zhao Y, Zhu B, Sha J, Walker ES, Bank S, Chen Y, Akinwande D, Tao L. Anisotropic thermoelectric effect and field-effect devices in epitaxial bismuthene on Si (111). Nanotechnology. 31: 475202. PMID 32886647 DOI: 10.1088/1361-6528/Abaf1F  0.335
2020 Vinnakota RK, Dong Z, Briggs AF, Bank SR, Wasserman D, Genov DA. Plasmonic electro-optic modulator based on degenerate semiconductor interfaces Nanophotonics. 9: 1105-1113. DOI: 10.1515/Nanoph-2019-0518  0.33
2020 Wei D, Maddox S, Sohr P, Bank S, Law S. Enlarged growth window for plasmonic silicon-doped InAs using a bismuth surfactant Optical Materials Express. 10: 302-311. DOI: 10.1364/Ome.383260  0.398
2020 He F, Walker ES, Zhou Y, Montano RD, Bank SR, Wang Y. Phase transition in epitaxial bismuth nanofilms Applied Physics Letters. 117: 73103. DOI: 10.1063/5.0016793  0.326
2020 El-Jaroudi RH, McNicholas KM, Briggs AF, Sifferman SD, Nordin L, Bank SR. Room-temperature photoluminescence and electroluminescence of 1.3-μm-range BGaInAs quantum wells on GaAs substrates Applied Physics Letters. 117: 21102. DOI: 10.1063/5.0011147  0.446
2020 Underwood KJ, Briggs AF, Sifferman SD, Verma VB, Sirica NS, Prasankumar RP, Nam SW, Silverman KL, Bank SR, Gopinath JT. Strain dependence of Auger recombination in 3 μm GaInAsSb/GaSb type-I active regions Applied Physics Letters. 116: 262103. DOI: 10.1063/5.0007512  0.332
2020 He F, Walker ES, Zhou Y, Muschinske SE, Bank SR, Wang Y. Quantum confinement of coherent acoustic phonons in transferred single-crystalline bismuth nanofilms Applied Physics Letters. 116: 263101. DOI: 10.1063/5.0007168  0.338
2020 Briggs AF, Nordin LJ, Muhowski AJ, Petluru P, Silva D, Wasserman D, Bank SR. Mid-infrared electroluminescence from type-II In(Ga)Sb quantum dots Applied Physics Letters. 116: 61103. DOI: 10.1063/1.5134808  0.449
2020 Nordin L, Li K, Briggs A, Simmons E, Bank SR, Podolskiy VA, Wasserman D. Enhanced emission from ultra-thin long wavelength infrared superlattices on epitaxial plasmonic materials Applied Physics Letters. 116: 021102. DOI: 10.1063/1.5132311  0.415
2020 Maiti R, Patil C, Saadi MASR, Xie T, Azadani JG, Uluutku B, Amin R, Briggs AF, Miscuglio M, Van Thourhout D, Solares SD, Low T, Agarwal R, Bank SR, Sorger VJ. Strain-engineered high-responsivity MoTe2 photodetector for silicon photonic integrated circuits Nature Photonics. 14: 578-584. DOI: 10.1038/S41566-020-0647-4  0.355
2020 Jones AH, March SD, Bank SR, Campbell JC. Low-noise high-temperature AlInAsSb/GaSb avalanche photodiodes for 2-μm applications Nature Photonics. 14: 559-563. DOI: 10.1038/S41566-020-0637-6  0.342
2019 He F, Sheehan N, Bank SR, Wang Y. Giant electron-phonon coupling detected under surface plasmon resonance in Au film. Optics Letters. 44: 4590-4593. PMID 31517938 DOI: 10.1364/Ol.44.004590  0.328
2019 Ironside DJ, Salas R, Chen PY, Le KQ, Alú A, Bank SR. Enhancing THz generation in photomixers using a metamaterial approach. Optics Express. 27: 9481-9494. PMID 31045099 DOI: 10.1364/Oe.27.009481  0.305
2019 Jones AH, Rockwell A, March SD, Yuan Y, Bank SR, Campbell JC. High Gain, Low Dark Current Al 0.8 In 0.2 As 0.23 Sb 0.77 Avalanche Photodiodes Ieee Photonics Technology Letters. 31: 1948-1951. DOI: 10.1109/Lpt.2019.2950616  0.341
2019 Yuan Y, Zheng J, Rockwell AK, March SD, Bank SR, Campbell JC. AlInAsSb Impact Ionization Coefficients Ieee Photonics Technology Letters. 31: 315-318. DOI: 10.1109/Lpt.2019.2894114  0.306
2019 Jeong J, Meng X, Rockwell AK, Bank SR, Hsieh W, Lin J, Wang Y. Picosecond transient thermoreflectance for thermal conductivity characterization Nanoscale and Microscale Thermophysical Engineering. 23: 211-221. DOI: 10.1080/15567265.2019.1580807  0.304
2019 Dong Z, Vinnakota RK, Briggs AF, Nordin L, Bank SR, Genov DA, Wasserman D. Electrical modulation of degenerate semiconductor plasmonic interfaces Journal of Applied Physics. 126: 043101. DOI: 10.1063/1.5108905  0.364
2019 Zheng J, Jones AH, Tan Y, Rockwell AK, March S, Ahmed SZ, Dukes CA, Ghosh AW, Bank SR, Campbell JC. Characterization of band offsets in AlxIn1-xAsySb1-y alloys with varying Al composition Applied Physics Letters. 115: 122105. DOI: 10.1063/1.5107516  0.319
2019 Ironside DJ, Skipper AM, Leonard TA, Radulaski M, Sarmiento T, Dhingra P, Lee ML, Vučković J, Bank SR. High-Quality GaAs Planar Coalescence over Embedded Dielectric Microstructures Using an All-MBE Approach Crystal Growth & Design. 19: 3085-3091. DOI: 10.1021/Acs.Cgd.8B01671  0.425
2018 Park J, Kang JH, Liu X, Maddox SJ, Tang K, McIntyre PC, Bank SR, Brongersma ML. Dynamic thermal emission control with InAs-based plasmonic metasurfaces. Science Advances. 4: eaat3163. PMID 30539139 DOI: 10.1126/Sciadv.Aat3163  0.317
2018 Zheng J, Yuan Y, Tan Y, Peng Y, Rockwell AK, Bank SR, Ghosh AW, Campbell JC. Digital Alloy InAlAs Avalanche Photodiodes Journal of Lightwave Technology. 36: 3580-3585. DOI: 10.1109/Jlt.2018.2844114  0.314
2018 Rockwell AK, Ren M, Woodson M, Jones AH, March SD, Tan Y, Yuan Y, Sun Y, Hool R, Maddox SJ, Lee ML, Ghosh AW, Campbell JC, Bank SR. Toward deterministic construction of low noise avalanche photodetector materials Applied Physics Letters. 113: 102106. DOI: 10.1063/1.5040592  0.365
2018 Jung D, Ironside DJ, Bank SR, Gossard AC, Bowers JE. Effect of growth interruption in 1.55 μm InAs/InAlGaAs quantum dots on InP grown by molecular beam epitaxy Journal of Applied Physics. 123: 205302. DOI: 10.1063/1.5031772  0.539
2018 Krivoy EM, Vasudev AP, Rahimi S, Synowicki RA, McNicholas KM, Ironside DJ, Salas R, Kelp G, Jung D, Nair HP, Shvets G, Akinwande D, Lee ML, Brongersma ML, Bank SR. Rare-Earth Monopnictide Alloys for Tunable, Epitaxial, Designer Plasmonics Acs Photonics. 5: 3051-3056. DOI: 10.1021/Acsphotonics.8B00288  0.339
2018 Nookala N, Xu J, Wolf O, March S, Sarma R, Bank S, Klem J, Brener I, Belkin M. Mid-infrared second-harmonic generation in ultra-thin plasmonic metasurfaces without a full-metal backplane Applied Physics B. 124: 132. DOI: 10.1007/S00340-018-7005-Y  0.308
2017 Jones AH, Yuan Y, Ren M, Maddox SJ, Bank SR, Campbell JC. AlxIn1-xAsySb1-y photodiodes with low avalanche breakdown temperature dependence. Optics Express. 25: 24340-24345. PMID 29041378 DOI: 10.1364/Oe.25.024340  0.328
2017 Trivedi T, Roy A, Movva HCP, Walker ES, Bank SR, Neikirk DP, Banerjee SK. Versatile Large-Area Custom-Feature van der Waals Epitaxy of Topological Insulators. Acs Nano. PMID 28692797 DOI: 10.1021/Acsnano.7B03894  0.343
2017 Jung D, Faucher J, Mukherjee S, Akey A, Ironside DJ, Cabral M, Sang X, Lebeau J, Bank SR, Buonassisi T, Moutanabbir O, Lee ML. Highly tensile-strained Ge/InAlAs nanocomposites. Nature Communications. 8: 14204. PMID 28128282 DOI: 10.1038/Ncomms14204  0.322
2017 Salas R, Guchhait S, Sifferman SD, McNicholas KM, Dasika VD, Jung D, Krivoy EM, Lee ML, Bank SR. Growth rate and surfactant-assisted enhancements of rare-earth arsenide InGaAs nanocomposites for terahertz generation Apl Materials. 5: 096106. DOI: 10.1063/1.4991589  0.354
2017 Chen K, Sheehan N, He F, Meng X, Mason SC, Bank SR, Wang Y. Measurement of Ambipolar Diffusion Coefficient of Photoexcited Carriers with Ultrafast Reflective Grating-Imaging Technique Acs Photonics. 4: 1440-1446. DOI: 10.1021/Acsphotonics.7B00187  0.304
2017 Lee C, Yeh H, Cheng F, Su P, Her T, Chen Y, Wang C, Gwo S, Bank SR, Shih C, Chang W. Low-Threshold Plasmonic Lasers on a Single-Crystalline Epitaxial Silver Platform at Telecom Wavelength Acs Photonics. 4: 1431-1439. DOI: 10.1021/Acsphotonics.7B00184  0.364
2016 Wu Z, Kelp G, Yogeesh MN, Li W, McNicholas KM, Briggs A, Rajeeva BB, Akinwande D, Bank SR, Shvets G, Zheng Y. Dual-band moiré metasurface patches for multifunctional biomedical applications. Nanoscale. PMID 27778012 DOI: 10.1039/C6Nr06608A  0.322
2016 Zhu W, Park S, Yogeesh MN, McNicholas KM, Bank SR, Akinwande D. Black Phosphorus Flexible Thin Film Transistors at GHz Frequencies. Nano Letters. PMID 26977902 DOI: 10.1021/Acs.Nanolett.5B04768  0.319
2016 Salas R, Guchhait S, McNicholas KM, Sifferman SD, Dasika VD, Jung D, Krivoy EM, Lee ML, Bank SR. Surfactant-assisted growth and properties of rare-earth arsenide InGaAs nanocomposites for terahertz generation Applied Physics Letters. 108. DOI: 10.1063/1.4948581  0.364
2016 Schulze CS, Huang X, Prohl C, Füllert V, Rybank S, Maddox SJ, March SD, Bank SR, Lee ML, Lenz A. Atomic structure and stoichiometry of In(Ga)As/GaAs quantum dots grown on an exact-oriented GaP/Si(001) substrate Applied Physics Letters. 108. DOI: 10.1063/1.4945598  0.417
2016 Ren M, Maddox S, Chen Y, Woodson M, Campbell JC, Bank S. AlInAsSb/GaSb staircase avalanche photodiode Applied Physics Letters. 108: 081101. DOI: 10.1063/1.4942370  0.369
2016 Maddox SJ, March SD, Bank S. Broadly Tunable AlInAsSb Digital Alloys Grown on GaSb Crystal Growth & Design. 16: 3582-3586. DOI: 10.1021/Acs.Cgd.5B01515  0.397
2016 Yang SH, Salas R, Krivoy EM, Nair HP, Bank SR, Jarrahi M. Characterization of ErAs:GaAs and LuAs:GaAs Superlattice Structures for Continuous-Wave Terahertz Wave Generation through Plasmonic Photomixing Journal of Infrared, Millimeter, and Terahertz Waves. 1-9. DOI: 10.1007/S10762-016-0255-Z  0.373
2015 Yardimci NT, Salas R, Krivoy EM, Nair HP, Bank SR, Jarrahi M. Impact of substrate characteristics on performance of large area plasmonic photoconductive emitters. Optics Express. 23: 32035-43. PMID 26698994 DOI: 10.1364/Oe.23.032035  0.346
2015 Park KW, Krivoy EM, Nair HP, Bank SR, Yu ET. Cross-sectional scanning thermal microscopy of ErAs/GaAs superlattices grown by molecular beam epitaxy. Nanotechnology. 26: 265701. PMID 26057323 DOI: 10.1088/0957-4484/26/26/265701  0.351
2015 Bank S, Maddox SJ, Sun W, Nair HP, Campbell JC. Recent progress in high gain InAs avalanche photodiodes (Presentation Recording) Proceedings of Spie. 9555: 955509. DOI: 10.1117/12.2189149  0.339
2015 Sifferman SD, Nair HP, Salas R, Sheehan NT, Maddox SJ, Crook AM, Bank SR. Highly Strained Mid-Infrared Type-I Diode Lasers on GaSb Ieee Journal On Selected Topics in Quantum Electronics. 21. DOI: 10.1109/Jstqe.2015.2427742  0.484
2015 Salas R, Guchhait S, Sifferman SD, McNicholas KM, Dasika VD, Krivoy EM, Jung D, Lee ML, Bank SR. Growth and properties of rare-earth arsenide InGaAs nanocomposites for terahertz generation Applied Physics Letters. 106. DOI: 10.1063/1.4913611  0.367
2014 Wagner M, McLeod AS, Maddox SJ, Fei Z, Liu M, Averitt RD, Fogler MM, Bank SR, Keilmann F, Basov DN. Ultrafast dynamics of surface plasmons in InAs by time-resolved infrared nanospectroscopy. Nano Letters. 14: 4529-34. PMID 25046340 DOI: 10.1021/Nl501558T  0.372
2014 Appaiah K, Zisman S, Das AK, Vishwanath S, Bank SR. Analysis of laser and detector placement in incoherent MIMO multimode fiber systems Journal of Optical Communications and Networking. 6: 371-386. DOI: 10.1364/Jocn.6.000371  0.312
2014 Dasika VD, Krivoy EM, Nair HP, Maddox SJ, Park KW, Jung D, Lee ML, Yu ET, Bank SR. Increased InAs quantum dot size and density using bismuth as a surfactant Applied Physics Letters. 105. DOI: 10.1063/1.4904825  0.391
2014 Li X, Dasika VD, Li PC, Ji L, Bank SR, Yu ET. Minimized open-circuit voltage reduction in GaAs/InGaAs quantum well solar cells with bandgap-engineered graded quantum well depths Applied Physics Letters. 105. DOI: 10.1063/1.4896739  0.386
2013 Sun W, Lu Z, Zheng X, Campbell JC, Maddox SJ, Nair HP, Bank SR. High-Gain InAs avalanche photodiodes Ieee Journal of Quantum Electronics. 49: 154-161. DOI: 10.1109/Jqe.2012.2233462  0.323
2013 Park KW, Nair HP, Crook AM, Bank SR, Yu ET. Quantitative scanning thermal microscopy of ErAs/GaAs superlattice structures grown by molecular beam epitaxy Applied Physics Letters. 102. DOI: 10.1063/1.4792757  0.36
2012 Majumdar A, Rundquist A, Bajcsy M, Dasika VD, Bank SR, Vu?kovi? J. Design and analysis of photonic crystal coupled cavity arrays for quantum simulation Physical Review B - Condensed Matter and Materials Physics. 86. DOI: 10.1103/Physrevb.86.195312  0.323
2012 Kudrawiec R, Nair HP, Latkowska M, Misiewicz J, Bank SR, Walukiewicz W. Contactless electroreflectance study of the Fermi level pinning on GaSb surface in n-type and p-type GaSb Van Hoof structures Journal of Applied Physics. 112. DOI: 10.1063/1.4770413  0.306
2012 Krivoy EM, Rahimi S, Nair HP, Salas R, Maddox SJ, Ironside DJ, Jiang Y, Dasika VD, Ferrer DA, Kelp G, Shvets G, Akinwande D, Bank SR. Growth and characterization of single crystal rocksalt LaAs using LuAs barrier layers Applied Physics Letters. 101. DOI: 10.1063/1.4766945  0.371
2012 Krivoy EM, Nair HP, Crook AM, Rahimi S, Maddox SJ, Salas R, Ferrer DA, Dasika VD, Akinwande D, Bank SR. Growth and characterization of LuAs films and nanostructures Applied Physics Letters. 101. DOI: 10.1063/1.4757605  0.413
2012 Maddox SJ, Sun W, Lu Z, Nair HP, Campbell JC, Bank SR. Enhanced low-noise gain from InAs avalanche photodiodes with reduced dark current and background doping Applied Physics Letters. 101. DOI: 10.1063/1.4757424  0.382
2012 Park KW, Dasika VD, Nair HP, Crook AM, Bank SR, Yu ET. Conductivity and structure of ErAs nanoparticles embedded in GaAs pn junctions analyzed via conductive atomic force microscopy Applied Physics Letters. 100. DOI: 10.1063/1.4728116  0.334
2012 Nair HP, Crook AM, Yu KM, Bank SR. Structural and optical studies of nitrogen incorporation into GaSb-based GaInSb quantum wells Applied Physics Letters. 100. DOI: 10.1063/1.3675618  0.495
2011 Salas R, Krivoy EM, Crook AM, Nair HP, Bank SR. Compositional grading of InxGa1-xAs/GaAs tunnel junctions enhanced by ErAs nanoparticles Proceedings of Spie - the International Society For Optical Engineering. 8106. DOI: 10.1117/12.896937  0.326
2011 Sciambi A, Pelliccione M, Lilly MP, Bank SR, Gossard AC, Pfeiffer LN, West KW, Goldhaber-Gordon D. Vertical field-effect transistor based on wave-function extension Physical Review B - Condensed Matter and Materials Physics. 84. DOI: 10.1103/Physrevb.84.085301  0.447
2011 Crook AM, Nair HP, Ferrer DA, Bank SR. Suppression of planar defects in the molecular beam epitaxy of GaAs/ErAs/GaAs heterostructures Applied Physics Letters. 99. DOI: 10.1063/1.3626035  0.383
2011 Crook AM, Nair HP, Bank SR. Surface segregation effects of erbium in GaAs growth and their implications for optical devices containing ErAs nanostructures Applied Physics Letters. 98. DOI: 10.1063/1.3565168  0.371
2011 Sciambi A, Pelliccione M, Bank SR, Gossard AC, Goldhaber-Gordon D. Erratum: “Virtual scanning tunneling microscopy: A local spectroscopic probe of two-dimensional electron systems” [Appl. Phys. Lett. 97, 132103 (2010)] Applied Physics Letters. 98: 089901. DOI: 10.1063/1.3554334  0.46
2010 Hosseini A, Kwong D, Zhang Y, Chandorkar SA, Crnogorac F, Carlson A, Fallah B, Bank S, Tutuc E, Rogers J, Pease RFW, Chen RT. On the fabrication of three-dimensional silicon-on-insulator based optical phased array for agile and large angle laser beam steering systems Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics. 28: C6O1-C6O7. DOI: 10.1116/1.3511508  0.319
2010 Sciambi A, Pelliccione M, Bank SR, Gossard AC, Goldhaber-Gordon D. Virtual scanning tunneling microscopy: A local spectroscopic probe of two-dimensional electron systems Applied Physics Letters. 97. DOI: 10.1063/1.3492440  0.426
2010 Nair HP, Crook AM, Bank SR. Enhanced conductivity of tunnel junctions employing semimetallic nanoparticles through variation in growth temperature and deposition Applied Physics Letters. 96. DOI: 10.1063/1.3442909  0.318
2010 Crook AM, Nair HP, Bank SR. High-performance nanoparticle-enhanced tunnel junctions for photonic devices Physica Status Solidi (C) Current Topics in Solid State Physics. 7: 2544-2547. DOI: 10.1002/Pssc.200983914  0.37
2009 Mintairov AM, Sun K, Merz JL, Yuen H, Bank S, Wistey M, Harris JS, Peake G, Egorov A, Ustinov V, Kudrawiec R, Misiewicz J. Atomic arrangement and emission properties of GaAs(In, Sb)N quantum wells Semiconductor Science and Technology. 24. DOI: 10.1088/0268-1242/24/7/075013  0.729
2009 Singisetti U, Zimmerman JD, Wistey MA, Cagnon J, Thibeault BJ, Rodwell MJW, Gossard AC, Stemmer S, Bank SR. ErAs epitaxial Ohmic contacts to InGaAs/InP Applied Physics Letters. 94. DOI: 10.1063/1.3087313  0.742
2009 Kudrawiec R, Poloczek P, Misiewicz J, Bae HP, Sarmiento T, Bank SR, Yuen HB, Wistey MA, Harris JS. Contactless electroreflectance of GaInNAsSb/GaNAs/GaAs quantum wells emitting at 1.5-1.65 μm: Broadening of the fundamental transition Applied Physics Letters. 94. DOI: 10.1063/1.3073718  0.75
2009 Burek GJ, Wistey MA, Singisetti U, Nelson A, Thibeault BJ, Bank SR, Rodwell MJW, Gossard AC. Height-selective etching for regrowth of self-aligned contacts using MBE Journal of Crystal Growth. 311: 1984-1987. DOI: 10.1016/J.Jcrysgro.2008.11.012  0.68
2008 Oye MM, Bank SR, Ptak AJ, Reedy RC, Goorsky MS, Holmes AL. Role of ion damage on unintentional Ca incorporation during the plasma-assisted molecular-beam epitaxy growth of dilute nitrides using N2 Ar source gas mixtures Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 26: 1058-1063. DOI: 10.1116/1.2924329  0.333
2008 Singisetti U, Wistey MA, Zimmerman JD, Thibeault BJ, Rodwell MJW, Gossard AC, Bank SR. Ultralow resistance in situ Ohmic contacts to InGaAs/InP Applied Physics Letters. 93. DOI: 10.1063/1.3013572  0.768
2008 Kudrawiec R, Yuen HB, Bank SR, Bae HP, Wistey MA, Harris JS, Motyka M, Misiewicz J. On the Fermi level pinning in as-grown GaInNAs(Sb)/GaAs quantum wells with indium content of 8%-32% Journal of Applied Physics. 104. DOI: 10.1063/1.2961330  0.725
2008 Xin YC, Lin CY, Li Y, Bae HP, Yuen HB, Wistey MA, Harris JS, Bank SR, Lester LF. Monolithic 1.55m GaInNAsSb quantum well passively modelocked lasers Electronics Letters. 44: 581-582. DOI: 10.1049/El:20080362  0.699
2008 Kudrawiec R, Yuen HB, Bank SR, Bae HP, Wistey MA, Harris JS, Motyka M, Gladysiewicz M, Misiewicz J. The Fermi level position in as-grown GaInNAs(Sb) quantum wells and layers studied by contactless electroreflectance Physica Status Solidi (C) Current Topics in Solid State Physics. 5: 473-477. DOI: 10.1002/Pssc.200777468  0.712
2007 Chen HT, Padilla WJ, Zide JM, Bank SR, Gossard AC, Taylor AJ, Averitt RD. Ultrafast optical switching of terahertz metamaterials fabricated on ErAs/GaAs nanoisland superlattices. Optics Letters. 32: 1620-2. PMID 17572725 DOI: 10.1364/Ol.32.001620  0.775
2007 Pickett E, Bank S, Yuen H, Bae H, Sarmiento T, Marshall A, Harris J. Thermally Induced Relaxation in GaInNAsSb Quantum Well Structures Mrs Proceedings. 994. DOI: 10.1557/Proc-0994-F05-02  0.531
2007 Bank SR, Bae H, Goddard LL, Yuen HB, Wistey MA, Kudrawiec R, Harris JS. Recent Progress on 1.55-μm dilute-nitride lasers Ieee Journal of Quantum Electronics. 43: 773-785. DOI: 10.1109/Jqe.2007.902301  0.73
2007 Yi W, Narayanamurti V, Zide JMO, Bank SR, Gossard AC. Probing energy barriers and quantum confined states of buried semiconductor heterostructures with ballistic carrier injection: An experimental study Physical Review B - Condensed Matter and Materials Physics. 75. DOI: 10.1103/Physrevb.75.115333  0.522
2007 Kudrawiec R, Yuen HB, Bank SR, Bae HP, Wistey MA, Harris JS, Motyka M, Misiewicz J. Contactless electroreflectance approach to study the Fermi level position in GaInNAs/GaAs quantum wells Journal of Applied Physics. 102. DOI: 10.1063/1.2817258  0.726
2007 Crook AM, Lind E, Griffith Z, Rodwell MJW, Zimmerman JD, Gossard AC, Bank SR. Low resistance, nonalloyed Ohmic contacts to InGaAs Applied Physics Letters. 91. DOI: 10.1063/1.2806235  0.665
2007 Oye MM, Mattord TJ, Hallock GA, Bank SR, Wistey MA, Reifsnider JM, Ptak AJ, Yuen HB, Harris JS, Holmes AL. Effects of different plasma species (atomic N, metastable N 2 *, and ions) on the optical properties of dilute nitride materials grown by plasma-assisted molecular-beam epitaxy Applied Physics Letters. 91. DOI: 10.1063/1.2806226  0.787
2007 Shahrjerdi D, Garcia-Gutierrez DI, Akyol T, Bank SR, Tutuc E, Lee JC, Banerjee SK. GaAs metal-oxide-semiconductor capacitors using atomic layer deposition of HfO 2 gate dielectric: Fabrication and characterization Applied Physics Letters. 91. DOI: 10.1063/1.2806190  0.325
2007 Bae HP, Bank SR, Yuen HB, Sarmiento T, Pickett ER, Wistey MA, Harris JS. Temperature dependencies of annealing behaviors of GaInNAsSb/GaNAs quantum wells for long wavelength dilute-nitride lasers Applied Physics Letters. 90. DOI: 10.1063/1.2746944  0.815
2007 Jackrel DB, Bank SR, Yuen HB, Wistey MA, Harris JS, Ptak AJ, Johnston SW, Friedman DJ, Kurtz SR. Dilute nitride GaInNAs and GaInNAsSb solar cells by molecular beam epitaxy Journal of Applied Physics. 101. DOI: 10.1063/1.2744490  0.773
2007 Kudrawiec R, Bank SR, Yuen HB, Bae H, Wistey MA, Goddard LL, Harris JS, Gladysiewicz M, Motyka M, Misiewicz J. Conduction band offset for Ga0.62In0.38N xAs0.991-xSb0.009/GaNyAs 1-y/GaAs systems with the ground state transition at 1.5-1.65 μm Applied Physics Letters. 90. DOI: 10.1063/1.2716366  0.756
2007 Kudrawiec R, Yuen HB, Bank SR, Bae HP, Wistey MA, Harris JS, Motyka M, Misiewicz J. Fermi level shift in GaInNAsSb/GaAs quantum wells upon annealing studied by contactless electroreflectance Applied Physics Letters. 90. DOI: 10.1063/1.2437729  0.723
2007 Kudrawiec R, Yuen HB, Motyka M, Gladysiewicz M, Misiewicz J, Bank SR, Bae HP, Wistey MA, Harris JS. Contactless electroreflectance of GaInNAsSbGaAs single quantum wells with indium content of 8%-32% Journal of Applied Physics. 101. DOI: 10.1063/1.2382721  0.717
2007 Hanson MP, Bank SR, Zide JMO, Zimmerman JD, Gossard AC. Controlling electronic properties of epitaxial nanocomposites of dissimilar materials Journal of Crystal Growth. 301: 4-9. DOI: 10.1016/J.Jcrysgro.2006.11.250  0.752
2007 Harris JS, Kudrawiec R, Yuen HB, Bank SR, Bae HP, Wistey MA, Jackrel D, Pickett ER, Sarmiento T, Goddard LL, Lordi V, Gugov T. Development of GaInNAsSb alloys: Growth, band structure, optical properties and applications Physica Status Solidi (B) Basic Research. 244: 2707-2729. DOI: 10.1002/Pssb.200675620  0.78
2007 Kudrawiec R, Yuen HB, Bank SR, Bae HP, Wistey MA, Harris JS, Motyka M, Gladysiewicz M, Misiewicz J. Electromodulation spectroscopy of interband transitions in GaInNAsSb/GaAs quantum wells with high indium content Physica Status Solidi (a) Applications and Materials Science. 204: 364-372. DOI: 10.1002/Pssa.200673954  0.732
2007 Kudrawiec R, Yuen HB, Bank SR, Bae HP, Wistey MA, Harris JS, Motyka M, Gladysiewicz M, Misiewicz J. The influence of antimony on the optical quality of highly strained GaInNAs/GaAs QWs investigated by contacless electroreflectance Physica Status Solidi (a) Applications and Materials Science. 204: 543-546. DOI: 10.1002/Pssa.200673291  0.712
2006 Ptak AJ, Friedman DJ, Kurtz S, Reedy RC, Young M, Jackrel DB, Yuen HB, Bank SR, Wistey MA, Harris JS. Calcium impurities in enhanced-depletion-width GaInNAs grown by molecular-beam epitaxy Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures. 24: 1540. DOI: 10.1116/1.2190664  0.768
2006 Kudrawiec R, Gladysiewicz M, Misiewicz J, Yuen HB, Bank SR, Wistey MA, Bae HP, Harris JS. Interband transitions inGaN0.02As0.98−xSbx∕GaAs(0Physical Review B. 73: 245413. DOI: 10.1103/Physrevb.73.245413  0.702
2006 Bank SR, Yuen HB, Bae H, Wistey MA, Moto A, Harris JS. Enhanced luminescence in GaInNAsSb quantum wells through variation of the arsenic and antimony fluxes Applied Physics Letters. 88: 241923. DOI: 10.1063/1.2213176  0.821
2006 Kudrawiec R, Motyka M, Gladysiewicz M, Misiewicz J, Yuen HB, Bank SR, Bae H, Wistey MA, Harris JS. Band gap discontinuity in Ga0.9In0.1N0.027As0.973−xSbx∕GaAs single quantum wells with 0⩽x<0.06 studied by contactless electroreflectance spectroscopy Applied Physics Letters. 88: 221113. DOI: 10.1063/1.2208949  0.719
2006 Yuen HB, Bank SR, Bae H, Wistey MA, Harris JS. Effects of strain on the optimal annealing temperature of GaInNAsSb quantum wells Applied Physics Letters. 88: 221913. DOI: 10.1063/1.2208937  0.794
2006 Bank SR, Yuen HB, Bae H, Wistey MA, Harris JS. Overannealing effects in GaInNAs(Sb) alloys and their importance to laser applications Applied Physics Letters. 88: 221115. DOI: 10.1063/1.2208375  0.805
2006 Yuen HB, Bank SR, Bae H, Wistey MA, Harris JS. The role of antimony on properties of widely varying GaInNAsSb compositions Journal of Applied Physics. 99: 093504. DOI: 10.1063/1.2191745  0.811
2006 Wistey M, Bank S, Bae H, Yuen H, Pickett E, Goddard L, Harris J. GaInNAsSb∕GaAs vertical cavity surface emitting lasers at 1534 nm Electronics Letters. 42: 282. DOI: 10.1049/El:20064455  0.73
2006 Bank SR, Bae HP, Yuen HB, Wistey MA, Goddard LL, Harris JS. Room-temperature continuous-wave 1.55 μm GaInNAsSb laser on GaAs Electronics Letters. 42: 156-157. DOI: 10.1049/El:20064022  0.672
2006 Kudrawiec R, Gladysiewicz M, Misiewicz J, Yuen H, Bank S, Wistey M, Bae H, Harris JS. Photoreflectance spectroscopy of a Ga0.62In0.38N0.026As0.954Sb0.02/GaAs single quantum well tailored at 1.5μm Solid State Communications. 137: 138-141. DOI: 10.1016/J.Ssc.2005.11.006  0.727
2006 Kudrawiec R, Gladysiewicz M, Motyka M, Misiewicz J, Yuen H, Bank S, Wistey M, Bae H, Harris JS. Contactless electroreflectance spectroscopy of Ga(In)NAs/GaAs quantum well structures containing Sb atoms Applied Surface Science. 253: 152-157. DOI: 10.1016/J.Apsusc.2006.05.111  0.718
2005 Jiang X, Wang R, Shelby RM, Macfarlane RM, Bank SR, Harris JS, Parkin SS. Highly spin-polarized room-temperature tunnel injector for semiconductor spintronics using MgO(100). Physical Review Letters. 94: 056601. PMID 15783671 DOI: 10.1103/Physrevlett.94.056601  0.765
2005 Bank SR, Wistey MA, Yuen HB, Goddard LL, Bae H, Harris JS. Molecular-beam epitaxy growth of low-threshold cw GaInNAsSb lasers at 1.5 μm Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures. 23: 1337. DOI: 10.1116/1.1914825  0.818
2005 Wistey MA, Bank SR, Yuen HB, Goddard LL, Gugov T, Harris JS. Protecting wafer surface during plasma ignition using an arsenic cap Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures. 23: 1324. DOI: 10.1116/1.1914820  0.772
2005 Wistey MA, Bank SR, Yuen HB, Harris JS, Oye MM, Holmes AL. Using beam flux monitor as Langmuir probe for plasma-assisted molecular beam epitaxy Journal of Vacuum Science and Technology a: Vacuum, Surfaces and Films. 23: 460-464. DOI: 10.1116/1.1881635  0.706
2005 Yuen HB, Wistey MA, Bank SR, Bae H, Harris JS. Investigation of nitrogen flow variation into a radio frequency plasma cell on plasma properties and GaInNAs grown by molecular beam epitaxy Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures. 23: 1328. DOI: 10.1116/1.1881592  0.794
2005 Bank SR, Wistey MA, Yuen HB, Lordi V, Gambin VF, Harris JS. Effects of antimony and ion damage on carrier localization in molecular-beam-epitaxy-grown GaInNAs Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures. 23: 1320. DOI: 10.1116/1.1878995  0.807
2005 Bank SR, Goddard LL, Wistey MA, Yuen HB, Harris JS. On the temperature sensitivity of 1.5-/spl mu/m GaInNAsSb lasers Ieee Journal of Selected Topics in Quantum Electronics. 11: 1089-1098. DOI: 10.1109/Jstqe.2005.853852  0.665
2005 Lordi V, Yuen HB, Bank SR, Wistey MA, Harris JS, Friedrich S. Nearest-neighbor distributions inGa1−xInxNyAs1−yandGa1−xInxNyAs1−y−zSbzthin films upon annealing Physical Review B. 71. DOI: 10.1103/Physrevb.71.125309  0.802
2005 Salis G, Wang R, Jiang X, Shelby RM, Parkin SSP, Bank SR, Harris JS. Temperature independence of the spin-injection efficiency of a MgO-based tunnel spin injector Applied Physics Letters. 87: 262503. DOI: 10.1063/1.2149369  0.461
2005 Kudrawiec R, Motyka M, Misiewicz J, Yuen HB, Bank SR, Wistey MA, Bae HP, Harris JS. Photoluminescence from as-grown and annealed GaN0.027As0.863Sb0.11∕GaAs single quantum wells Journal of Applied Physics. 98: 63527. DOI: 10.1063/1.2060940  0.739
2005 Bank SR, Yuen HB, Wistey MA, Lordi V, Bae HP, Harris JS. Effects of growth temperature on the structural and optical properties of 1.55μm GaInNAsSb quantum wells grown on GaAs Applied Physics Letters. 87: 021908. DOI: 10.1063/1.1993772  0.811
2005 Oye MM, Wistey MA, Reifsnider JM, Agarwal S, Mattord TJ, Govindaraju S, Hallock GA, Holmes AL, Bank SR, Yuen HB, Harris JS. Ion damage effects from negative deflector plate voltages during the plasma-assisted molecular-beam epitaxy growth of dilute nitrides Applied Physics Letters. 86: 1-3. DOI: 10.1063/1.1940126  0.779
2005 Yuen HB, Bank SR, Wistey MA, Harris JS, Seong M, Yoon S, Kudrawiec R, Misiewicz J. Improved optical quality of GaNAsSb in the dilute Sb limit Journal of Applied Physics. 97: 113510. DOI: 10.1063/1.1926398  0.807
2005 Kudrawiec R, Ryczko K, Misiewicz J, Yuen HB, Bank SR, Wistey MA, Bae HP, Harris JS. Band-gap discontinuity in GaN0.02As0.87Sb0.11∕GaAs single-quantum wells investigated by photoreflectance spectroscopy Applied Physics Letters. 86: 141908. DOI: 10.1063/1.1897849  0.717
2005 Kudrawiec R, Sitarek P, Misiewicz J, Bank SR, Yuen HB, Wistey MA, Harris JJS. Interference effects in electromodulation spectroscopy applied to GaAs-based structures: A comparison of photoreflectance and contactless electroreflectance Applied Physics Letters. 86: 91115. DOI: 10.1063/1.1873052  0.684
2005 Goddard LL, Bank SR, Wistey MA, Yuen HB, Rao Z, Harris JS. Recombination, gain, band structure, efficiency, and reliability of 1.5-μm GaInNAsSb/GaAs lasers Journal of Applied Physics. 97: 083101. DOI: 10.1063/1.1873035  0.81
2005 Kudrawiec R, Yuen HB, Ryczko K, Misiewicz J, Bank SR, Wistey MA, Bae HP, Harris JS. Photoreflectance and photoluminescence investigations of a step-like GaInNAsSb∕GaAsN∕GaAs quantum well tailored at 1.5μm: The energy level structure and the Stokes shift Journal of Applied Physics. 97: 53515. DOI: 10.1063/1.1854729  0.716
2005 Wang R, Jiang X, Shelby RM, Macfarlane RM, Parkin SSP, Bank SR, Harris JS. Increase in spin injection efficiency of a CoFe∕MgO(100) tunnel spin injector with thermal annealing Applied Physics Letters. 86: 052901. DOI: 10.1063/1.1787896  0.778
2005 Wistey MA, Bank SR, Yuen HB, Bae H, Harris JS. Nitrogen plasma optimization for high-quality dilute nitrides Journal of Crystal Growth. 278: 229-233. DOI: 10.1016/J.Jcrysgro.2004.12.060  0.789
2004 Gugov T, Wistey M, Yuen H, Bank S, Harris JS. Structural Characterization of Molecular Beam Epitaxy Grown GaInNAs and GaInNAsSb Quantum Wells by Transmission Electron Microscopy Mrs Proceedings. 817. DOI: 10.1557/Proc-817-L6.40  0.809
2004 Wistey MA, Bank SR, Yuen HB, Goddard LL, Harris JS. GaInNAs(Sb) vertical-cavity surface-emitting lasers at 1.460 μm Journal of Vacuum Science & Technology B. 22: 1562-1564. DOI: 10.1116/1.1714940  0.694
2004 Fu J, Bank SR, Wistey MA, Yuen HB, Harris JS. Solid-source molecular-beam epitaxy growth of GaInNAsSb/InGaAs single quantum well on InP with photoluminescence peak wavelength at 2.04 μm Journal of Vacuum Science & Technology B. 22: 1463-1467. DOI: 10.1116/1.1691411  0.817
2004 Gugov T, Gambin V, Wistey M, Yuen H, Bank S, Harris JS. Use of transmission electron microscopy in the characterization of GaInNAs(Sb) quantum well structures grown by molecular beam epitaxy Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures. 22: 1588. DOI: 10.1116/1.1650853  0.81
2004 Bank SR, Wistey MA, Goddard LL, Yuen HB, Lordi V, Harris JS. Low-threshold continuous-wave 1.5-/spl mu/m GaInNAsSb lasers grown on GaAs Ieee Journal of Quantum Electronics. 40: 656-664. DOI: 10.1109/Jqe.2004.828249  0.784
2004 Yuen HB, Bank SR, Wistey MA, Harris JS, Moto A. Comparison of GaNAsSb and GaNAs as quantum-well barriers for GaInNAsSb optoelectronic devices operating at 1.3–1.55μm Journal of Applied Physics. 96: 6375-6381. DOI: 10.1063/1.1807028  0.831
2004 Lordi V, Yuen HB, Bank SR, Harris JS. Quantum-confined Stark effect of GaInNAs(Sb) quantum wells at 1300–1600nm Applied Physics Letters. 85: 902-904. DOI: 10.1063/1.1777825  0.816
2004 Gollub D, Kamp M, Forchel A, Seufert J, Bank SR, Wistey MA, Yuen HB, Goddard LL, Harris JS. Continuous-wave operation of GaInNAsSb distributed feedback lasers at 1.5 μm Electronics Letters. 40: 1487-1488. DOI: 10.1049/El:20046601  0.657
2004 Bank SR, Wistey MA, Goddard LL, Yuen HB, Bae HP, Harris JS. High-performance 1.5 µm GaInNAsSb lasers grown on GaAs Electronics Letters. 40: 1186-1187. DOI: 10.1049/El:20046270  0.715
2003 Wistey MA, Bank SR, Yuen HB, Goddard LL, Harris JS. Monolithic, GaInNAsSb VCSELs at 1.46 [micro sign]m on GaAs by MBE Electronics Letters. 39: 1822. DOI: 10.1049/El:20031139  0.621
2003 Bank SR, Wistey MA, Yuen HB, Goddard LL, Ha W, Harris JS. Low-threshold CW GaInNAsSb∕GaAs laser at 1.49 [micro sign]m Electronics Letters. 39: 1445. DOI: 10.1049/El:20030928  0.639
2003 Bank SR, Ha W, Gambin V, Wistey M, Yuen H, Goddard L, Kim S, Harris JS. 1.5 μm GaInNAs(Sb) lasers grown on GaAs by MBE Journal of Crystal Growth. 251: 367-371. DOI: 10.1016/S0022-0248(02)02446-6  0.825
2003 Volz K, Gambin V, Ha W, Wistey MA, Yuen H, Bank S, Harris JS. The role of Sb in the MBE growth of (GaIn)(NAsSb) Journal of Crystal Growth. 251: 360-366. DOI: 10.1016/S0022-0248(02)02198-X  0.716
2002 Gambin V, Ha W, Wistey M, Yuen H, Bank SR, Kim SM, Harris JS. GaInNAsSb for 1.3-1.6-/spl mu/m-long wavelength lasers grown by molecular beam epitaxy Ieee Journal of Selected Topics in Quantum Electronics. 8: 795-800. DOI: 10.1109/Jstqe.2002.800843  0.693
2002 Ha W, Gambin V, Bank S, Wistey M, Yuen H, Kim S, Harris JS. Long-wavelength GaInNAs(Sb) lasers on GaAs Ieee Journal of Quantum Electronics. 38: 1260-1267. DOI: 10.1109/Jqe.2002.802451  0.828
2002 Ha W, Gambin V, Wistey M, Bank S, Kim S, Harris JS. Multiple-quantum-well GaInNAs-GaNAs ridge-waveguide laser diodes operating out to 1.4 /spl mu/m Ieee Photonics Technology Letters. 14: 591-593. DOI: 10.1109/68.998694  0.76
2002 Ha W, Gambin V, Wistey M, Bank SR, Yuen H, Kim S, Harris JS. Long wavelength GaInNAsSb/GaNAsSb multiple quantum well lasers Electronics Letters. 38: 277-278. DOI: 10.1049/El:20020207  0.725
2001 Chung T, Bank SR, Epple J, Hsieh K. Current gain dependence on subcollector and etch-stop doping in InGaP/GaAs HBTs Ieee Transactions On Electron Devices. 48: 835-839. DOI: 10.1109/16.918224  0.316
2000 Chung T, Bank SR, Hsieh KC. High DC current gain InGaP/GaAs HBTs grown by LP-MOCVD Electronics Letters. 36: 1885-1886. DOI: 10.1049/El:20001321  0.35
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