Diana L. Huffaker - Publications

Affiliations: 
Electrical Engineering University of California, Los Angeles, Los Angeles, CA 
Area:
Solid-state nanotechnology, plasmonically-coupled processes, optoelectronic devices, solar cell, si photonics, novel materials

223 high-probability publications. We are testing a new system for linking publications to authors. You can help! If you notice any inaccuracies, please sign in and mark papers as correct or incorrect matches. If you identify any major omissions or other inaccuracies in the publication list, please let us know.

Year Citation  Score
2018 Ren D, Scofield AC, Farrell AC, Rong Z, Haddad MA, Laghumavarapu RB, Liang B, Huffaker DL. Exploring time-resolved photoluminescence for nanowires using a three-dimensional computational transient model. Nanoscale. PMID 29663009 DOI: 10.1039/c8nr01908h  0.64
2017 Wang Y, Sheng X, Guo Q, Li X, Wang S, Fu G, Mazur YI, Maidaniuk Y, Ware ME, Salamo GJ, Liang B, Huffaker DL. Photoluminescence Study of the Interface Fluctuation Effect for InGaAs/InAlAs/InP Single Quantum Well with Different Thickness. Nanoscale Research Letters. 12: 229. PMID 28359139 DOI: 10.1186/s11671-017-1998-8  0.4
2016 Kim H, Farrell AC, Senanayake PN, Lee WJ, Huffaker DL. Monolithically integrated InGaAs nanowires on 3D structured silicon-on-insulator as a new platform for full optical links. Nano Letters. PMID 26901448 DOI: 10.1021/acs.nanolett.5b04883  0.96
2016 Juang BC, Prout DL, Liang B, Chatziioannou AF, Huffaker DL. Characterization of GaSb photodiode for gamma-ray detection Applied Physics Express. 9. DOI: 10.7567/APEX.9.086401  0.96
2016 Juang BC, Prout DL, Liang B, Chatziioannou AF, Huffaker DL. GaSb-based photon counting gamma-ray detectors Device Research Conference - Conference Digest, Drc. 2016. DOI: 10.1109/DRC.2016.7548504  0.96
2016 Couto ODD, De Almeida PT, Dos Santos GE, Balanta MAG, Andriolo HF, Brum JA, Brasil MJSP, Iikawa F, Liang BL, Huffaker DL. Enhancement of carrier lifetimes in type-II quantum dot/quantum well hybrid structures Journal of Applied Physics. 120. DOI: 10.1063/1.4961534  0.96
2016 Debnath MC, Mishima TD, Santos MB, Cheng Y, Whiteside VR, Sellers IR, Hossain K, Laghumavarapu RB, Liang BL, Huffaker DL. High-density InAs/GaAs1- xSbx quantum-dot structures grown by molecular beam epitaxy for use in intermediate band solar cells Journal of Applied Physics. 119. DOI: 10.1063/1.4943631  0.96
2016 Lee WJ, Kim H, Farrell AC, Senanayake P, Huffaker DL. Nanopillar array band-edge laser cavities on silicon-on-insulator for monolithic integrated light sources Applied Physics Letters. 108. DOI: 10.1063/1.4942777  0.96
2016 Komolibus K, Scofield AC, Gradkowski K, Ochalski TJ, Kim H, Huffaker DL, Huyet G. Improved room-temperature luminescence of core-shell InGaAs/GaAs nanopillars via lattice-matched passivation Applied Physics Letters. 108. DOI: 10.1063/1.4941435  0.96
2016 Ariyawansa G, Reyner CJ, Steenbergen EH, Duran JM, Reding JD, Scheihing JE, Bourassa HR, Liang BL, Huffaker DL. InGaAs/InAsSb strained layer superlattices for mid-wave infrared detectors Applied Physics Letters. 108. DOI: 10.1063/1.4939904  0.96
2016 Mishra U, Huffaker D, Choquette K, Palacios T, Matioli E, Myers R, Rajan S, Wang H. Compound Semiconductors Physica Status Solidi (a) Applications and Materials Science. 213: 850. DOI: 10.1002/pssa.201670627  0.96
2015 Lee WJ, Senanayake PN, Farrell AC, Lin A, Hung CH, Huffaker DL. High quantum efficiency nanopillar photodiodes overcoming the diffraction limit of light. Nano Letters. PMID 26682745 DOI: 10.1021/acs.nanolett.5b03485  0.96
2015 Farrell AC, Senanayake P, Hung CH, El-Howayek G, Rajagopal A, Currie M, Hayat MM, Huffaker DL. Plasmonic field confinement for separate absorption-multiplication in InGaAs nanopillar avalanche photodiodes. Scientific Reports. 5: 17580. PMID 26627932 DOI: 10.1038/srep17580  0.96
2015 Farrell AC, Lee WJ, Senanayake P, Haddad MA, Prikhodko SV, Huffaker DL. High-Quality InAsSb Nanowires Grown by Catalyst-Free Selective-Area Metal-Organic Chemical Vapor Deposition. Nano Letters. 15: 6614-9. PMID 26422559 DOI: 10.1021/acs.nanolett.5b02389  0.96
2015 Hung CH, Senanayake P, Lee WJ, Farrell A, Hsieh N, Huffaker DL. Nanopillar optical antenna nBn detectors for subwavelength infrared pixels Proceedings of Spie - the International Society For Optical Engineering. 9481. DOI: 10.1117/12.2177483  0.96
2015 Hubbard SM, Hellstroem S, Bittner ZS, Laghumavarapu RB, Huffaker D. Intermediate band solar cell design using InAs quantum dots in AlAsSb cladding 2015 Ieee 42nd Photovoltaic Specialist Conference, Pvsc 2015. DOI: 10.1109/PVSC.2015.7355971  0.96
2015 Juang BC, Laghumavarapu RB, Foggo BJ, Simmonds PJ, Lin A, Liang B, Huffaker DL. GaSb thermophotovoltaic cells grown on GaAs by molecular beam epitaxy using interfacial misfit arrays Applied Physics Letters. 106. DOI: 10.1063/1.4915258  0.96
2015 Ji HM, Liang B, Simmonds PJ, Juang BC, Yang T, Young RJ, Huffaker DL. Hybrid type-I InAs/GaAs and type-II GaSb/GaAs quantum dot structure with enhanced photoluminescence Applied Physics Letters. 106. DOI: 10.1063/1.4914895  0.96
2015 Komolibus K, Piwonski T, Gradkowski K, Reyner CJ, Liang B, Huyet G, Huffaker DL, Houlihan J. Ultrafast dynamics of type-II GaSb/GaAs quantum dots Applied Physics Letters. 106. DOI: 10.1063/1.4906106  0.96
2015 Grynko DO, Fedoryak AN, Dimitriev OP, Lin A, Laghumavarapu RB, Huffaker DL, Kratzer M, Piryatinski YP. Template-assisted synthesis of CdS nanocrystal arrays in chemically inhomogeneous pores using a vapor-solid mechanism Rsc Advances. 5: 27496-27501. DOI: 10.1039/c5ra01175b  0.96
2015 Zhao Z, Laghumavarapu RB, Simmonds PJ, Ji H, Liang B, Huffaker DL. Photoluminescence study of the effect of strain compensation on InAs/AlAsSb quantum dots Journal of Crystal Growth. DOI: 10.1016/j.jcrysgro.2015.02.049  0.96
2015 Marshall ARJ, Craig AP, Reyner CJ, Huffaker DL. GaAs and AlGaAs APDs with GaSb absorption regions in a separate absorption and multiplication structure using a hetero-lattice interface Infrared Physics and Technology. 70: 168-170. DOI: 10.1016/j.infrared.2014.08.014  0.96
2014 Simmonds PJ, Sun M, Laghumavarapu RB, Liang B, Norman AG, Luo JW, Huffaker DL. Improved quantum dot stacking for intermediate band solar cells using strain compensation. Nanotechnology. 25: 445402. PMID 25319397 DOI: 10.1088/0957-4484/25/44/445402  0.96
2014 Scofield AC, Lin A, Haddad M, Huffaker DL. Axial diffusion barriers in near-infrared nanopillar LEDs. Nano Letters. 14: 6037-41. PMID 25280080 DOI: 10.1021/nl501022v  0.64
2014 Bittner ZS, Laghumavarapu RB, Hellstroem S, Huffaker D, Liang B, Hubbard SM. Experimental examination of an InAs/GaAs(Sb)/AlAsSb quantum dot approach to the intermediate band solar cell 2014 Ieee 40th Photovoltaic Specialist Conference, Pvsc 2014. 3626-3628. DOI: 10.1109/PVSC.2014.6924892  0.96
2014 El-Howayek G, Milner BM, Senanayake P, Huffaker DL, Hayat MM. Analytical model for impact ionization in 3D multiplication regions 2014 Ieee Photonics Conference, Ipc 2014. 168-169. DOI: 10.1109/IPCon.2014.6995301  0.96
2014 Farrell AC, Senanayake P, Hung CH, Currie M, Huffaker DL. Reflection spectromicroscopy for the design of nanopillar optical antenna detectors Device Research Conference - Conference Digest, Drc. 175-176. DOI: 10.1109/DRC.2014.6872354  0.96
2014 Yerino CD, Simmonds PJ, Liang B, Jung D, Schneider C, Unsleber S, Vo M, Huffaker DL, Höfling S, Kamp M, Lee ML. Strain-driven growth of GaAs(111) quantum dots with low fine structure splitting Applied Physics Letters. 105. DOI: 10.1063/1.4904944  0.96
2014 Bittner ZS, Hellstroem S, Polly SJ, Laghumavarapu RB, Liang B, Huffaker DL, Hubbard SM. Investigation of optical transitions in InAs/GaAs(Sb)/AlAsSb quantum dots using modulation spectroscopy Applied Physics Letters. 105. DOI: 10.1063/1.4904076  0.96
2014 Yerino CD, Simmonds PJ, Liang B, Dorogan VG, Ware ME, Mazur YI, Jung D, Huffaker DL, Salamo GJ, Lee ML. Tensile GaAs(111) quantum dashes with tunable luminescence below the bulk bandgap Applied Physics Letters. 105. DOI: 10.1063/1.4893747  0.96
2014 Craig AP, Reyner CJ, Marshall ARJ, Huffaker DL. Excess noise in GaAs and AlGaAs avalanche photodiodes with GaSb absorption regions - Composite structures grown using interfacial misfit arrays Applied Physics Letters. 104. DOI: 10.1063/1.4879848  0.96
2014 Borrego JM, Brown E, Greiff P, Huffaker DL, Laghumavarapu RB, Kim J, Dutta PS. Rear illumination monolithically integrated GaSb thermophotovoltaic devices grown on semi-insulating GaAs substrate Journal of Renewable and Sustainable Energy. 6. DOI: 10.1063/1.4828368  0.96
2014 Scofield AC, Lin A, Haddad M, Huffaker DL. Axial diffusion barriers in near-infrared nanopillar LEDs Nano Letters. 14: 6037-6041. DOI: 10.1021/nl501022v  0.96
2014 Nelson CA, Luo J, Jen AKY, Laghumavarapu RB, Huffaker DL, Zhu XY. Time-, energy-, and phase-resolved second-harmonic generation at semiconductor interfaces Journal of Physical Chemistry C. 118: 27981-27988. DOI: 10.1021/jp5094614  0.96
2014 Mariani G, Wang Y, Kaner RB, Huffaker DL. Hybrid solar cells: Materials, interfaces, and devices Springer Series in Materials Science. 190: 357-387. DOI: 10.1007/978-3-319-01988-8_12  0.96
2014 Lin A, Shapiro JN, Eisele H, Huffaker DL. Tuning the au-free InSb nanocrystal morphologies grown by patterned metal-organic chemical vapor deposition Advanced Functional Materials. 24: 4311-4316. DOI: 10.1002/adfm.201303390  0.96
2013 Shapiro JN, Lin A, Ratsch C, Huffaker DL. Temperature dependence of stacking faults in catalyst-free GaAs nanopillars. Nanotechnology. 24: 475601. PMID 24192402 DOI: 10.1088/0957-4484/24/47/475601  0.96
2013 Gao J, Combrie S, Liang B, Schmitteckert P, Lehoucq G, Xavier S, Xu X, Busch K, Huffaker DL, De Rossi A, Wong CW. Strongly coupled slow-light polaritons in one-dimensional disordered localized states. Scientific Reports. 3: 1994. PMID 23771242 DOI: 10.1038/srep01994  0.96
2013 Oh DY, Kim SH, Huang J, Scofield A, Huffaker D, Scherer A. Self-aligned active quantum nanostructures in photonic crystals via selective wet-chemical etching. Nanotechnology. 24: 265201. PMID 23733244 DOI: 10.1088/0957-4484/24/26/265201  0.96
2013 Simmonds PJ, Yerino CD, Sun M, Liang B, Huffaker DL, Dorogan VG, Mazur Y, Salamo G, Lee ML. Tuning quantum dot luminescence below the bulk band gap using tensile strain. Acs Nano. 7: 5017-23. PMID 23701255 DOI: 10.1021/nn400395y  0.96
2013 Mariani G, Zhou Z, Scofield A, Huffaker DL. Direct-bandgap epitaxial core-multishell nanopillar photovoltaics featuring subwavelength optical concentrators. Nano Letters. 13: 1632-7. PMID 23485255 DOI: 10.1021/nl400083g  0.96
2013 Mariani G, Scofield AC, Hung CH, Huffaker DL. GaAs nanopillar-array solar cells employing in situ surface passivation. Nature Communications. 4: 1497. PMID 23422665 DOI: 10.1038/ncomms2509  0.96
2013 Lin A, Liang BL, Dorogan VG, Mazur YI, Tarasov GG, Salamo GJ, Huffaker DL. Strong passivation effects on the properties of an InAs surface quantum dot hybrid structure. Nanotechnology. 24: 075701. PMID 23358560 DOI: 10.1088/0957-4484/24/7/075701  0.96
2013 Liu W, Liang B, Huffaker D, Fetterman H. Anisotropic electro-optic effect on InGaAs quantum dot chain modulators Optics Letters. 38: 4262-4264. DOI: 10.1364/OL.38.004262  0.96
2013 Mariani G, Huffaker DL. Direct-bandgap nanopillar photovoltaics based on patterned catalyst-free epitaxy Proceedings of Spie - the International Society For Optical Engineering. 8725. DOI: 10.1117/12.2018125  0.96
2013 Mariani G, Tu C, Zhou Z, Scofield A, Shapiro J, Huffaker DL. Experimental matrix study of leakage current in nanopillar-based devices towards high-efficiency photovoltaics Conference Record of the Ieee Photovoltaic Specialists Conference. 3200-3202. DOI: 10.1109/PVSC.2013.6745133  0.96
2013 Sun M, Simmonds PJ, Laghumavarapu RB, Lin A, Reyner CJ, Liang B, Huffaker DL. Towards intermediate-band solar cells with InAs/AlAsSb quantum dots Conference Record of the Ieee Photovoltaic Specialists Conference. 3493-3496. DOI: 10.1109/PVSC.2013.6744245  0.96
2013 Laghumavarapu RB, Liang BL, Bittner Z, Navruz TS, Hubbard SM, Norman A, Huffaker DL. GaSb/InGaAs quantum dot-well solar cells Conference Record of the Ieee Photovoltaic Specialists Conference. 292-295. DOI: 10.1109/PVSC.2013.6744150  0.96
2013 Yu TH, Yan L, You W, Laghumavarapu RB, Huffaker D, Ratsch C. The effect of passivation on different GaAs surfaces Applied Physics Letters. 103. DOI: 10.1063/1.4826480  0.96
2013 Thoma J, Liang B, Lewis L, Hegarty SP, Huyet G, Huffaker DL. Carrier localization and in-situ annealing effect on quaternary Ga 1-xInxAsySb1-y/GaAs quantum wells grown by Sb pre-deposition Applied Physics Letters. 102. DOI: 10.1063/1.4795866  0.96
2013 Nowozin T, Bonato L, Högner A, Wiengarten A, Bimberg D, Lin WH, Lin SY, Reyner CJ, Liang BL, Huffaker DL. 800 meV localization energy in GaSb/GaAs/Al0.3Ga0.7As quantum dots Applied Physics Letters. 102. DOI: 10.1063/1.4791678  0.96
2013 Lin A, Shapiro JN, Scofield AC, Liang BL, Huffaker DL. Enhanced InAs nanopillar electrical transport by in-situ passivation Applied Physics Letters. 102. DOI: 10.1063/1.4791592  0.96
2013 Thoma J, Liang B, Lewis L, Hegarty SP, Huyet G, Huffaker DL. Electro-optical and lasing properties of hybrid quantum dot/quantum well material system for reconfigurable photonic devices Applied Physics Letters. 102. DOI: 10.1063/1.4791565  0.96
2013 Sun M, Simmonds PJ, Babu Laghumavarapu R, Lin A, Reyner CJ, Duan HS, Liang B, Huffaker DL. Effects of GaAs(Sb) cladding layers on InAs/AlAsSb quantum dots Applied Physics Letters. 102. DOI: 10.1063/1.4776221  0.96
2013 Thoma J, Liang B, Reyner C, Ochalski T, Williams D, Hegarty SP, Huffaker D, Huyet G. Electro-optic properties of GaInAsSb/GaAs quantum well for high-speed integrated optoelectronic devices Applied Physics Letters. 102. DOI: 10.1063/1.4775371  0.96
2013 Grynko DA, Fedoryak AN, Dimitriev OP, Lin A, Laghumavarapu RB, Huffaker DL. Growth of CdS nanowire crystals: Vapor-liquid-solid versus vapor-solid mechanisms Surface and Coatings Technology. 230: 234-238. DOI: 10.1016/j.surfcoat.2013.06.058  0.96
2013 Laghumavarapu RB, Liang BL, Bittner ZS, Navruz TS, Hubbard SM, Norman A, Huffaker DL. GaSb/InGaAs quantum dot-well hybrid structure active regions in solar cells Solar Energy Materials and Solar Cells. 114: 165-171. DOI: 10.1016/j.solmat.2013.02.027  0.96
2013 Liang B, Wong PS, Tran T, Dorogan VG, Mazur YI, Ware ME, Salamo GJ, Shih CK, Huffaker DL. Site-controlled formation of InGaAs quantum nanostructures-Tailoring the dimensionality and the quantum confinement Nano Research. 6: 235-242. DOI: 10.1007/s12274-013-0299-5  0.96
2013 Krishna S, Plis E, Bhattacharya P, Huffaker D. Compound Semiconductors Physica Status Solidi (C) Current Topics in Solid State Physics. 10: 719-725. DOI: 10.1002/pssc.201360163  0.96
2012 Senanayake P, Hung CH, Farrell A, Ramirez DA, Shapiro J, Li CK, Wu YR, Hayat MM, Huffaker DL. Thin 3D multiplication regions in plasmonically enhanced nanopillar avalanche detectors. Nano Letters. 12: 6448-52. PMID 23206195 DOI: 10.1021/nl303837y  0.96
2012 Senanayake P, Hung CH, Shapiro J, Scofield A, Lin A, Williams BS, Huffaker DL. 3D nanopillar optical antenna photodetectors. Optics Express. 20: 25489-96. PMID 23187366  0.96
2012 Mariani G, Wang Y, Wong PS, Lech A, Hung CH, Shapiro J, Prikhodko S, El-Kady M, Kaner RB, Huffaker DL. Three-dimensional core-shell hybrid solar cells via controlled in situ materials engineering. Nano Letters. 12: 3581-6. PMID 22697614 DOI: 10.1021/nl301251q  0.96
2012 Lin A, Shapiro JN, Senanayake PN, Scofield AC, Wong PS, Liang B, Huffaker DL. Extracting transport parameters in GaAs nanopillars grown by selective-area epitaxy. Nanotechnology. 23: 105701. PMID 22349093 DOI: 10.1088/0957-4484/23/10/105701  0.96
2012 Huffaker DL, Nunna K. Interfacial misfit dislocation arrays Lattice Engineering: Technology and Applications. 1-62. DOI: 10.4032/9789814364256  0.96
2012 Marshall ARJ, Nunna K, Tan SL, Reyner CJ, Liang B, Jallipalli A, David JPR, Huffaker DL. Short-wave infrared GaInAsSb photodiodes grown on GaAs substrates Proceedings of Spie - the International Society For Optical Engineering. 8541. DOI: 10.1117/12.974765  0.96
2012 Steenbergen EH, Nunna K, Ouyang L, Ullrich B, Huffaker DL, Smith DJ, Zhang YH. Strain-balanced InAs/InAs1-xSbx type-II superlattices grown by molecular beam epitaxy on GaSb substrates Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics. 30. DOI: 10.1116/1.3672028  0.96
2012 Ouyang L, Steenbergen EH, Zhang YH, Nunna K, Huffaker DL, Smith DJ. Structural properties of InAs/InAs1-xSbx type-II superlattices grown by molecular beam epitaxy Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics. 30. DOI: 10.1116/1.3672026  0.96
2012 Mariani G, Scofield A, Huffaker DL. High-perfomance patterned arrays of core-shell GaAs nanopillar solar cells with in-situ ingap passivation layer Conference Record of the Ieee Photovoltaic Specialists Conference. 3080-3082. DOI: 10.1109/PVSC.2012.6318232  0.96
2012 Nunna KC, Tan SL, Reyner CJ, Marshall ARJ, Liang B, Jallipalli A, David JPR, Huffaker DL. Short-wave infrared GaInAsSb photodiodes grown on GaAs substrate by interfacial misfit array technique Ieee Photonics Technology Letters. 24: 218-220. DOI: 10.1109/LPT.2011.2177253  0.96
2012 Gradkowski K, Ochalski TJ, Pavarelli N, Liu HY, Tatebayashi J, Williams DP, Mowbray DJ, Huyet G, Huffaker DL. Coulomb-induced emission dynamics and self-consistent calculations of type-II Sb-containing quantum dot systems Physical Review B - Condensed Matter and Materials Physics. 85. DOI: 10.1103/PhysRevB.85.035432  0.96
2012 Scofield AC, Lin A, Shapiro JN, Senanayake PN, Mariani G, Haddad M, Liang BL, Huffaker DL. Composite axial/core-shell nanopillar light-emitting diodes at 1.3 μm Applied Physics Letters. 101. DOI: 10.1063/1.4738997  0.96
2012 Simmonds PJ, Babu Laghumavarapu R, Sun M, Lin A, Reyner CJ, Liang B, Huffaker DL. Structural and optical properties of InAs/AlAsSb quantum dots with GaAs(Sb) cladding layers Applied Physics Letters. 100. DOI: 10.1063/1.4729419  0.96
2012 Wu J, Makableh YFM, Vasan R, Manasreh MO, Liang B, Reyner CJ, Huffaker DL. Strong interband transitions in InAs quantum dots solar cell Applied Physics Letters. 100. DOI: 10.1063/1.3681360  0.96
2012 Mazur YI, Dorogan VG, Salamo GJ, Tarasov GG, Liang BL, Reyner CJ, Nunna K, Huffaker DL. Coexistence of type-I and type-II band alignments in antimony-incorporated InAsSb quantum dot nanostructures Applied Physics Letters. 100. DOI: 10.1063/1.3676274  0.96
2012 Mariani G, Wang Y, Wong PS, Lech A, Hung CH, Shapiro J, Prikhodko S, El-Kady M, Kaner RB, Huffaker DL. Three-dimensional core-shell hybrid solar cells via controlled in situ materials engineering Nano Letters. 12: 3581-3586. DOI: 10.1021/nl301251q  0.96
2012 Gao J, Combrie S, Liang B, Lehoucq G, Huffaker DL, De Rossi A, Wong CW. Strong coupling between single quantum dot and localized mode in photonic crystal waveguide 2012 Conference On Lasers and Electro-Optics, Cleo 2012 0.96
2012 Scofield AC, Kim SH, Shapiro JN, Lin A, Liang BL, Scherer A, Huffaker DL. Room temperature continuous wave lasing in nanopillar photonic crystal cavities 2012 Conference On Lasers and Electro-Optics, Cleo 2012 0.96
2012 Scofield AC, Kim SH, Shapiro JN, Lin A, Liang BL, Scherer A, Huffaker DL. Room temperature continuous wave lasing in nanopillar photonic crystal cavities 2012 Conference On Lasers and Electro-Optics, Cleo 2012 0.96
2011 Scofield AC, Kim SH, Shapiro JN, Lin A, Liang B, Scherer A, Huffaker DL. Bottom-up photonic crystal lasers. Nano Letters. 11: 5387-90. PMID 22098379 DOI: 10.1021/nl2030163  0.96
2011 Senanayake P, Hung CH, Shapiro J, Lin A, Liang B, Williams BS, Huffaker DL. Surface plasmon-enhanced nanopillar photodetectors. Nano Letters. 11: 5279-83. PMID 22077757 DOI: 10.1021/nl202732r  0.96
2011 Huang S, Balakrishnan G, Huffaker DL. Growth mode and defect evaluation of GaSb on GaAs substrate: a transmission electron microscopy study. Journal of Nanoscience and Nanotechnology. 11: 5108-13. PMID 21770151 DOI: 10.1166/jnn.2011.4111  0.96
2011 Mariani G, Wong PS, Katzenmeyer AM, Léonard F, Shapiro J, Huffaker DL. Patterned radial GaAs nanopillar solar cells. Nano Letters. 11: 2490-4. PMID 21604750 DOI: 10.1021/nl200965j  0.96
2011 Scofield AC, Shapiro JN, Lin A, Williams AD, Wong PS, Liang BL, Huffaker DL. Bottom-up photonic crystal cavities formed by patterned III-V nanopillars. Nano Letters. 11: 2242-6. PMID 21591759 DOI: 10.1021/nl200355d  0.96
2011 Nong H, Gicquel-Guézo M, Bramerie L, Perrin M, Grillot F, Fleurier R, Liang B, Huffaker DL, Levallois C, Pouliquen JL, Corre AL, Dehaese O, Loualiche S. Enhanced properties in single-walled carbon nanotubes based saturable absorber for all optical signal regeneration Japanese Journal of Applied Physics. 50. DOI: 10.1143/JJAP.50.040206  0.96
2011 Mariani G, Wang Y, Wong PS, Kaner RB, Huffaker DL. Electrochemical polymerization of PEDOT on catalyst-free patterned GaAs nanopillars for high efficiency hybrid photovoltaics: 37 th IEEE photovoltaic specialists conference Conference Record of the Ieee Photovoltaic Specialists Conference. 002639-002641. DOI: 10.1109/PVSC.2011.6186490  0.96
2011 Senanayake PN, Hung CH, Shapiro J, Lin A, Huffaker DL. Surface plasmon enhanced nanopillar photodetector array Ieee Photonic Society 24th Annual Meeting, Pho 2011. 809-810. DOI: 10.1109/PHO.2011.6110804  0.96
2011 Liu W, Kim RS, Liang B, Huffaker DL, Fetterman HR. High-speed inas quantum-dot electrooptic phase modulators Ieee Photonics Technology Letters. 23: 1748-1750. DOI: 10.1109/LPT.2011.2168201  0.96
2011 Scofield AC, Kim SH, Shapiro JN, Lin A, Liang BL, Scherer A, Huffaker DL. Low-threshold room-temperature lasing in bottom-up photonic crystal cavities formed by patterned III-V nanopillars Device Research Conference - Conference Digest, Drc. DOI: 10.1109/DRC.2011.6086643  0.96
2011 Shapiro JN, Lin A, Huffaker DL, Ratsch C. Potential energy surface of in and Ga adatoms above the (111)A and (110) surfaces of a GaAs nanopillar Physical Review B - Condensed Matter and Materials Physics. 84. DOI: 10.1103/PhysRevB.84.085322  0.96
2011 Liang BL, Wong PS, Pavarelli N, Tatebayashi J, Ochalski TJ, Huyet G, Huffaker DL. Lateral interdot carrier transfer in an InAs quantum dot cluster grown on a pyramidal GaAs surface Nanotechnology. 22. DOI: 10.1088/0957-4484/22/5/055706  0.96
2011 Steenbergen EH, Huang Y, Ryou JH, Dupuis RD, Nunna K, Huffaker DL, Zhang YH. Optical properties of strain-balanced InAs/InAs 1-xSb x type-II superlattices Aip Conference Proceedings. 1416: 122-125. DOI: 10.1063/1.3671713  0.96
2011 Reyner CJ, Wang J, Nunna K, Lin A, Liang B, Goorsky MS, Huffaker DL. Characterization of GaSb/GaAs interfacial misfit arrays using x-ray diffraction Applied Physics Letters. 99. DOI: 10.1063/1.3666234  0.96
2011 Evoen V, Zhou H, Gao L, Pozuelo M, Liang B, Tatebeyashi J, Kodambaka S, Huffaker DL, Hicks RF. Self-catalyzed vaporliquidsolid growth of InP/InAsP coreshell nanopillars Journal of Crystal Growth. 314: 34-38. DOI: 10.1016/j.jcrysgro.2010.11.092  0.96
2011 Scofield AC, Shapiro JN, Lin A, Williams AD, Wong PS, Liang BL, Huffaker DL. Bottom-up photonic crystal cavities formed by III-V nanopillar arrays Optics Infobase Conference Papers 0.96
2011 Mariani G, Wang Y, Wong PS, Laghumavarapu RB, Kaner RB, Huffaker DL. Hybrid photovoltaics based on electrochemical polymerization of PEDOT on patterned, catalyst free nanopillars Acs National Meeting Book of Abstracts 0.96
2011 Gao J, Combrie S, Liang B, Lehoucq G, Huffaker DL, Englund D, De Rossi A, Wong CW. Exciton-photon coupling of InAs quantum dot in GaAs photonic crystal mode-gap nanocavities Optics Infobase Conference Papers 0.96
2010 Katzenmeyer AM, Léonard F, Talin AA, Wong PS, Huffaker DL. Poole-Frenkel effect and phonon-assisted tunneling in GaAs nanowires. Nano Letters. 10: 4935-8. PMID 21053980 DOI: 10.1021/nl102958g  0.96
2010 He J, Reyner CJ, Liang BL, Nunna K, Huffaker DL, Pavarelli N, Gradkowski K, Ochalski TJ, Huyet G, Dorogan VG, Mazur YI, Salamo GJ. Band alignment tailoring of InAs1-xSbx/GaAs quantum dots: control of type I to type II transition. Nano Letters. 10: 3052-6. PMID 20698619 DOI: 10.1021/nl102237n  0.96
2010 Wong PS, Liang B, Huffaker DL. InAs quantum dots on nanopatterned GaAs (001) surface: the growth, optical properties, and device implementation. Journal of Nanoscience and Nanotechnology. 10: 1537-50. PMID 20355542 DOI: 10.1166/jnn.2010.2025  0.96
2010 Laghumavarapu RB, Mariani G, De Villers BT, Shapiro J, Senanayake P, Lin A, Schwartz BJ, Huffaker DL. Hybrid solar cells using gaas nanopillars Conference Record of the Ieee Photovoltaic Specialists Conference. 943-945. DOI: 10.1109/PVSC.2010.5614637  0.96
2010 Shapiro JN, Lin A, Wong PS, Scofield AC, Tu C, Senanayake PN, Mariani G, Liang BL, Huffaker DL. InGaAs heterostructure formation in catalyst-free GaAs nanopillars by selective-area metal-organic vapor phase epitaxy Applied Physics Letters. 97. DOI: 10.1063/1.3526734  0.96
2010 Senanayake P, Lin A, Mariani G, Shapiro J, Tu C, Scofield AC, Wong PS, Liang B, Huffaker DL. Photoconductive gain in patterned nanopillar photodetector arrays Applied Physics Letters. 97. DOI: 10.1063/1.3517491  0.96
2010 Wong PS, Liang BL, Lin A, Tatebayashi J, Huffaker DL. 1.52 μm photoluminescence emissions from InAs quantum dots grown on nanopatterned GaAs buffers Applied Physics Letters. 97. DOI: 10.1063/1.3499287  0.96
2010 Gradkowski K, Ochalski TJ, Pavarelli N, Williams DP, Huyet G, Liang B, Huffaker DL. Coulomb effect inhibiting spontaneous emission in charged quantum dot Applied Physics Letters. 97. DOI: 10.1063/1.3484143  0.96
2010 Mariani G, Laghumavarapu RB, Tremolet De Villers B, Shapiro J, Senanayake P, Lin A, Schwartz BJ, Huffaker DL. Hybrid conjugated polymer solar cells using patterned GaAs nanopillars Applied Physics Letters. 97. DOI: 10.1063/1.3459961  0.96
2010 Tatebayashi J, Lin A, Wong PS, Hick RF, Huffaker DL. Visible light emission from self-catalyzed GaInP/GaP core-shell double heterostructure nanowires on silicon Journal of Applied Physics. 108. DOI: 10.1063/1.3457355  0.96
2010 Tatebayashi J, Mariani G, Lin A, Hicks RF, Huffaker DL. Optical characteristics of GaInP/GaP double-heterostructure core-shell nanowires embedded in polydimethylsiloxane membranes Applied Physics Letters. 96. DOI: 10.1063/1.3455340  0.96
2010 Wong PS, Liang B, Molecke R, Tatebayashi J, Huffaker DL. Controlled formation and dynamic wulff simulation of equilibrium crystal shapes of GaAs pyramidal structures on nanopatterned substrates Crystal Growth and Design. 10: 2509-2514. DOI: 10.1021/cg900785f  0.96
2010 Nong H, Gicquel M, Bramerie L, Grillot F, Perrin M, Folliot H, Liang BL, Huffaker DL, Loualiche S. High-bit-rate pump-probe experiments on bundled single- walled carbon nanotubes for 1.55μ telecom signal regeneration Optics Infobase Conference Papers 0.96
2010 Nong H, Gicquel M, Bramerie L, Grillot F, Perrin M, Liang BL, Huffaker DL, Loualiche S. High-bit-rate pump-probe experiments on bundled single-walled carbon nanotubes for 1.55μm telecom signal regeneration Lasers and Electro-Optics/Quantum Electronics and Laser Science Conference: 2010 Laser Science to Photonic Applications, Cleo/Qels 2010 0.96
2009 Liang B, Lin A, Pavarelli N, Reyner C, Tatebayashi J, Nunna K, He J, Ochalski TJ, Huyet G, Huffaker DL. GaSb/GaAs type-II quantum dots grown by droplet epitaxy. Nanotechnology. 20: 455604. PMID 19834245 DOI: 10.1088/0957-4484/20/45/455604  0.96
2009 Wong PS, Liang BL, Tatebayashi J, Xue L, Nuntawong N, Kutty MN, Brueck SR, Huffaker DL. Fabrication and characteristics of broad-area light-emitting diode based on nanopatterned quantum dots. Nanotechnology. 20: 035302. PMID 19417291 DOI: 10.1088/0957-4484/20/3/035302  0.96
2009 Gao L, Woo RL, Liang B, Pozuelo M, Prikhodko S, Jackson M, Goel N, Hudait MK, Huffaker DL, Goorsky MS, Kodambaka S, Hicks RF. Self-catalyzed epitaxial growth of vertical indium phosphide nanowires on silicon. Nano Letters. 9: 2223-8. PMID 19413340 DOI: 10.1021/nl803567v  0.96
2009 Rotter TJ, Tatebayashi J, Senanayake P, Balakrishnan G, Rattunde M, Wagner J, Hader J, Moloney JV, Koch SW, Dawson LR, Huffaker DL. Continuous-wave room-temperature operation of 2-μm sb-based optically-pumped vertical-external-cavity surface-emitting laser monolithically grown on GaAs substrates Applied Physics Express. 2. DOI: 10.1143/APEX.2.112102  0.96
2009 Liang BL, Wong PS, Dorogan BVG, Tatebayashi J, Albrecht AR, Xiang H, Mazur YI, Salamo GJ, Brueck SRJ, Huffaker DL. Photoluminescence investigation of InAs quantum dots incorporating DWELL structures on patterned and planar GaAs (100) substrate Proceedings of Spie - the International Society For Optical Engineering. 7224. DOI: 10.1117/12.809784  0.96
2009 Tatebayashi J, Liang B, Bussian DA, Htoon H, Huang S, Balakrishnan G, Klimov V, Dawson LR, Huffaker DL. Formation and optical characteristics of type-II strain-relieved GaSb/GaAs quantum dots by using an interfacial misfit growth mode Ieee Transactions On Nanotechnology. 8: 269-274. DOI: 10.1109/TNANO.2008.2008717  0.96
2009 Tatebayashi J, Jallipalli A, Narayanan Kutty M, Huang S, Nunna K, Balakrishnan G, Ralph Dawson L, Huffaker DL. Monolithically integrated III-Sb-based laser diodes grown on miscut Si substrates Ieee Journal On Selected Topics in Quantum Electronics. 15: 716-723. DOI: 10.1109/JSTQE.2009.2015678  0.96
2009 Liang BL, Wong PS, Tatebayashi J, Huffaker DL. Energy transfer in patterned InAs quantum dot cluster grown on GaAs nano-pyramid Conference Proceedings - International Conference On Indium Phosphide and Related Materials. 75-76. DOI: 10.1109/ICIPRM.2009.5012425  0.96
2009 Tatebayashi J, Nuntawong N, Wong PS, Xin YC, Lester LF, Huffaker DL. Strain compensation technique in self-assembled InAs/GaAs quantum dots for applications to photonic devices Journal of Physics D: Applied Physics. 42. DOI: 10.1088/0022-3727/42/7/073002  0.96
2009 Jallipalli A, Nunna K, Kutty MN, Balakrishnan G, Dawson LR, Huffaker DL. Electronic characteristics of the interfacial states embedded in "buffer-free" GaSb/GaAs (001) heterojunctions Applied Physics Letters. 95. DOI: 10.1063/1.3266835  0.96
2009 Jallipalli A, Nunna K, Kutty MN, Balakrishnan G, Lush GB, Dawson LR, Huffaker DL. Compensation of interfacial states located inside the "buffer- free" GaSb/GaAs (001) heterojunction via δ -doping Applied Physics Letters. 95. DOI: 10.1063/1.3210783  0.96
2009 Gradkowski K, Pavarelli N, Ochalski TJ, Williams DP, Tatebayashi J, Huyet G, O'Reilly EP, Huffaker DL. Complex emission dynamics of type-II GaSb/GaAs quantum dots Applied Physics Letters. 95. DOI: 10.1063/1.3202419  0.96
2009 Huang S, Balakrishnan G, Huffaker DL. Interfacial misfit array formation for GaSb growth on GaAs Journal of Applied Physics. 105. DOI: 10.1063/1.3129562  0.96
2009 Huang S, Balakrishnan G, Huffaker DL. Characterization of interfacial misfit array formation for GaSb growth on gaas by transmission electron microscopy Microscopy and Microanalysis. 15: 1062-1063. DOI: 10.1017/S1431927609096469  0.96
2009 Gradkowski K, Ochalski TJ, Williams DP, Tatebayashi J, Khoshakhlagh A, Balakrishnan G, O'Reilly EP, Huyet G, Dawson LR, Huffaker DL. Optical transition pathways in type-II Ga(As)Sb quantum dots Journal of Luminescence. 129: 456-460. DOI: 10.1016/j.jlumin.2008.11.012  0.96
2009 Jallipalli A, Balakrishnan G, Huang SH, Rotter TJ, Nunna K, Liang BL, Dawson LR, Huffaker DL. Structural analysis of highly relaxed GaSb grown on GaAs substrates with periodic interfacial array of 90° misfit dislocations Nanoscale Research Letters. 4: 1458-1462. DOI: 10.1007/s11671-009-9420-9  0.96
2009 Gradkowski K, Ochalski TJ, Williams DP, Healy SB, Tatebayashi J, Balakrishnan G, O'Reilly EP, Huyet G, Huffaker DL. Coulomb effects in type-II Ga(As)Sb quantum dots Physica Status Solidi (B) Basic Research. 246: 752-755. DOI: 10.1002/pssb.200880630  0.96
2009 Ochalski TJ, Gradkowski K, Pavarelli N, Willams DP, O'Reilly EP, Huyet G, Tatebayashi J, Huffaker DL. Dynamic of the optical matrix element in type II GaAsSb/GaAs quantum dots for laser applications Optics Infobase Conference Papers 0.96
2009 Evoen V, Gao L, Pozuelo M, Chowdhury S, Tatebeyashi J, Liang B, Kodambaka S, Huffaker DL, Hicks RF. InP/InAs core-shell nanopillars on InP (111)B Aiche Annual Meeting, Conference Proceedings 0.96
2008 Wong PS, Liang BL, Dorogan VG, Albrecht AR, Tatebayashi J, He X, Nuntawong N, Mazur YI, Salamo GJ, Brueck SR, Huffaker DL. Improved photoluminescence efficiency of patterned quantum dots incorporating a dots-in-the-well structure. Nanotechnology. 19: 435710. PMID 21832714 DOI: 10.1088/0957-4484/19/43/435710  0.96
2008 Tatebayashi J, Liang BL, Laghumavarapu RB, Bussian DA, Htoon H, Klimov V, Balakrishnan G, Dawson LR, Huffaker DL. Time-resolved photoluminescence of type-II Ga(As)Sb/GaAs quantum dots embedded in an InGaAs quantum well. Nanotechnology. 19: 295704. PMID 21730609 DOI: 10.1088/0957-4484/19/29/295704  0.96
2008 Balakrishnan G, Rotter TJ, Jallipalli A, Dawson LR, Huffaker DL. Interfacial misfit dislocation array based growth of III-Sb active regions on GaAs/AlGaAs DBRs for high-power 2 μ VECSELs Proceedings of Spie - the International Society For Optical Engineering. 6871. DOI: 10.1117/12.776256  0.96
2008 Tatebayashi J, Jallipalli A, Kutty MN, Huang SH, Nuntawong N, Balakrishnan G, Dawson LR, Huffaker DL. Monolithically integrated III-Sb based laser diodes grown on miscut Si substrates Proceedings of Spie - the International Society For Optical Engineering. 6909. DOI: 10.1117/12.775340  0.96
2008 Timm R, Lenz A, Eisele H, Ivanova L, Dähne M, Balakrishnan G, Huffaker DL, Farrer I, Ritchie DA. Quantum ring formation and antimony segregation in GaSb/GaAs nanostructures Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 26: 1492-1503. DOI: 10.1116/1.2952451  0.96
2008 Shahrjerdi D, Nuntawong N, Balakrishnan G, Garcia-Gutierrez DI, Khoshakhlagh A, Tutuc E, Huffaker D, Lee JC, Banerjee SK. Fabrication and characterization of metal-oxide-semiconductor GaAs capacitors on Ge Si1-x Gex Si substrates with Al2 O3 gate dielectric Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 26: 1182-1186. DOI: 10.1116/1.2835061  0.96
2008 Wong PS, Liang BL, Nuntawong N, Tatebayashi J, Huffaker DL, Dorogan VG, Mazur YI, Salamo GJ. Photoluminescence comparison analysis of patterned and self-assembled quantum dots by MOCVD Conference On Quantum Electronics and Laser Science (Qels) - Technical Digest Series. DOI: 10.1109/QELS.2008.4552691  0.96
2008 Shahrjerdi D, Rotter T, Balakrishnan G, Huffaker D, Tutuc E, Banerjee SK. Fabrication of self-aligned enhancement-mode In0.53 Ga0.47As MOSFETs with TaN/HfO2/AlN gate stack Ieee Electron Device Letters. 29: 557-560. DOI: 10.1109/LED.2008.922031  0.96
2008 Wong PS, Liang BL, Nuntawong N, Xue L, Tatebayashi J, Brueck SRJ, Huffaker DL. 1.52 μm photoluminescence from InAs quantum dots grown on patterned GaAs buffer Conference Proceedings - International Conference On Indium Phosphide and Related Materials. DOI: 10.1109/ICIPRM.2008.4703006  0.96
2008 Timm R, Eisele H, Lenz A, Ivanova L, Balakrishnan G, Huffaker DL, Dähne M. Self-organized formation of GaSb/GaAs quantum rings Physical Review Letters. 101. DOI: 10.1103/PhysRevLett.101.256101  0.96
2008 Eyink KG, Tomich DH, Mitchel WC, Grazulis L, Carlin JA, Mahalingam K, Jallipalli A, Balakrishnan G, Huffaker D, Elhamri S. Electrical and structural characterization of a single GaSb/InAs/GaSb quantum well grown on GaAs using interface misfit dislocations Journal of Applied Physics. 104. DOI: 10.1063/1.2982277  0.96
2008 Huang SH, Balakrishnan G, Khoshakhlagh A, Dawson LR, Huffaker DL. Simultaneous interfacial misfit array formation and antiphase domain suppression on miscut silicon substrate Applied Physics Letters. 93. DOI: 10.1063/1.2970997  0.96
2008 Lee SC, Huffaker DL, Brueck SRJ. Faceting of a quasi-two-dimensional GaAs crystal in nanoscale patterned growth Applied Physics Letters. 92. DOI: 10.1063/1.2830988  0.96
2008 Tatebayashi J, Jallipalli A, Kutty MN, Huang SH, Rotter TJ, Balakrishnan G, Dawson LR, Huffaker DL. Device characteristics of GaInSb/AlGaSb quantum well lasers monolithically grown on GaAs substrates by using an interfacial misfit array Journal of Electronic Materials. 37: 1758-1763. DOI: 10.1007/s11664-008-0534-0  0.96
2008 Huffaker DL. Long wavelength lasers on silicon Ecio'08 Eindhoven - Proceedings of the 14th European Conference On Integrated Optics and Technical Exhibition, Contributed and Invited Papers. 91-94.  0.96
2007 Huffaker DL, Balakrishnan G, Jallipalli A, Kutty MN, Huang SH, Dawson LR. Monolithically integrated III-Sb diode lasers on Si using interfacial misfit arrays Proceedings of Spie - the International Society For Optical Engineering. 6775. DOI: 10.1117/12.737224  0.96
2007 Laghumavarapu RB, Nuntawong N, Albrecht AR, Huffaker DL. Growth and characterization of GaAs/InGaP heterostructure for semiconductor laser cooling Proceedings of Spie - the International Society For Optical Engineering. 6461. DOI: 10.1117/12.708337  0.96
2007 Mehta M, Jallipalli A, Tatebayashi J, Kutty MN, Albrecht A, Balakrishnan G, Dawson LR, Huffaker DL. Room-temperature operation of buffer-free GaSb-AlGaSb quantum-well diode lasers grown on a GaAs platform emitting at 1.65 μm Ieee Photonics Technology Letters. 19: 1628-1630. DOI: 10.1109/LPT.2007.904928  0.96
2007 Sharma YD, Bishop G, Kim HS, Rodriguez JB, Plis E, Balakrishnan G, Dawson LR, Huffaker DL, Krishna S. Type II strain layer superlattices (SLS's) grown on GaAs substrates Conference Proceedings - Lasers and Electro-Optics Society Annual Meeting-Leos. 96-97. DOI: 10.1109/LEOS.2007.4382293  0.96
2007 Huffaker DL, Mehta M, Balakrishnan G, Huang S, Khoshakhlagh A, Patel P, Kutty MN, Dawson LR. GaSb QW-based 'buffer-free' vertical LED monolithically embedded within a GaAs cavity using interfacial misfit arrays Conference Proceedings - Lasers and Electro-Optics Society Annual Meeting-Leos. 180-181. DOI: 10.1109/LEOS.2006.278951  0.96
2007 Yang T, Balakrishnan G, Lu L, Shih MH, O'Brien JD, Huffaker DL. Room temperature InGaSb quantum well microcylinder lasers at 2 μm grown monolithically on a silicon substrate Conference Proceedings - Lasers and Electro-Optics Society Annual Meeting-Leos. 731-732. DOI: 10.1109/LEOS.2006.278940  0.96
2007 Wong PS, Nuntawong N, Xue L, Tatebayashi J, Albrecht A, Rotella P, Brueck SRJ, Huffaker DL. Controlled crystal structure in patterned InAs quantum dot formation by selective area MOCVD Conference Proceedings - Lasers and Electro-Optics Society Annual Meeting-Leos. 108-109. DOI: 10.1109/LEOS.2006.278879  0.96
2007 Huffaker DL, Balakrishnan G, Jallipalli A, Kutty MN, Tatebayashi J, Huang SH, Dawson LR, Mi Z, Bhattacharya P. 1.54 μm monolithically integrated GaSb quantum well laser diode on silicon operating at 77K 2007 International Nano-Optelectronics Workshop, Inow. 16-17. DOI: 10.1109/INOW.2007.4302845  0.96
2007 Mehta M, Balakrishnan G, Jallapali A, Kutty MN, Dawson LR, Huffaker DL. 1.65 μm buffer-free GaSb/AlGaSb quantum-well diode lasers grown on a GaAs substrate operating at room temperature 65th Drc Device Research Conference. 193-194. DOI: 10.1109/DRC.2007.4373714  0.96
2007 Tatebayashi J, Khoshakhlagh A, Balakrishnan G, Huang SH, Mehta M, Dawson LR, Huffaker DL. Room-temperature lasing of type-II "W" GaSb/GaAs quantum dots embedded in InGaAs quantum well 65th Drc Device Research Conference. 73-74. DOI: 10.1109/DRC.2007.4373656  0.96
2007 Huffaker DL, Balakrishnan G, Mehta M, Kutty MN, Rotella P, Krishna S, Dawson LR. Monolithically integrated III-Sb superluminescent light emitting diodes on Si (100) substrates Conference On Lasers and Electro-Optics, 2007, Cleo 2007. DOI: 10.1109/CLEO.2007.4452988  0.96
2007 Mehta M, Balakrishnan G, Kutty MN, Patel P, Dawson LR, Huffaker DL. 1.55 μm GaSb/AlGaSb MQW diode lasers grown on GaAs substrates using interfacial misfit (IMF) arrays Conference On Lasers and Electro-Optics, 2007, Cleo 2007. DOI: 10.1109/CLEO.2007.4452800  0.96
2007 Liang BL, Wong PS, Nuntawong N, Albrecht AR, Tatebayashi J, Rotter TJ, Balakrishnan G, Huffaker DL. Optical properties of patterned InAs quantum dot ensembles grown on GaAs nanopyramids Applied Physics Letters. 91. DOI: 10.1063/1.2821121  0.96
2007 Laghumavarapu RB, El-Emawy M, Nuntawong N, Moscho A, Lester LF, Huffaker DL. Improved device performance of InAsGaAs quantum dot solar cells with GaP strain compensation layers Applied Physics Letters. 91. DOI: 10.1063/1.2816904  0.96
2007 Tatebayashi J, Jallipalli A, Kutty MN, Huang SH, Balakrishnan G, Dawson LR, Huffaker DL. Room-temperature lasing at 1.82 μm of GaInSbAlGaSb quantum wells grown on GaAs substrates using an interfacial misfit array Applied Physics Letters. 91. DOI: 10.1063/1.2793186  0.96
2007 Tran T, Muller A, Shih CK, Wong PS, Balakrishnan G, Nuntawong N, Tatebayashi J, Huffaker DL. Single dot spectroscopy of site-controlled InAs quantum dots nucleated on GaAs nanopyramids Applied Physics Letters. 91. DOI: 10.1063/1.2790498  0.96
2007 Huang SH, Balakrishnan G, Mehta M, Dawson LR, Huffaker DL, Li P. Arsenic-induced etched nanovoids on GaSb (100) Journal of Applied Physics. 102. DOI: 10.1063/1.2772532  0.96
2007 Tatebayashi J, Khoshakhlagh A, Huang SH, Balakrishnan G, Dawson LR, Huffaker DL, Bussian DA, Htoon H, Klimov V. Lasing characteristics of GaSbGaAs self-assembled quantum dots embedded in an InGaAs quantum well Applied Physics Letters. 90. DOI: 10.1063/1.2752018  0.96
2007 Laghumavarapu RB, Moscho A, Khoshakhlagh A, El-Emawy M, Lester LF, Huffaker DL. GaSbGaAs type II quantum dot solar cells for enhanced infrared spectral response Applied Physics Letters. 90. DOI: 10.1063/1.2734492  0.96
2007 Wong PS, Balakrishnan G, Nuntawong N, Tatebayashi J, Huffaker DL. Controlled InAs quantum dot nucleation on faceted nanopatterned pyramids Applied Physics Letters. 90. DOI: 10.1063/1.2732825  0.96
2007 Nuntawong N, Tatebayashi J, Wong PS, Huffaker DL. Localized strain reduction in strain-compensated InAs/GaAs stacked quantum dot structures Applied Physics Letters. 90. DOI: 10.1063/1.2730732  0.96
2007 Huang SH, Balakrishnan G, Mehta M, Khoshakhlagh A, Dawson LR, Huffaker DL, Li P. Epitaxial growth and formation of interfacial misfit array for tensile GaAs on GaSb Applied Physics Letters. 90. DOI: 10.1063/1.2723649  0.96
2007 Balakrishnan G, Mehta M, Kutty MN, Patel P, Albrecht AR, Rotella P, Krishna S, Dawson LR, Huffaker DL. Monolithically integrated III-Sb CW super-luminal light emitting diodes on non-miscut Si (100) substrates Electronics Letters. 43: 244-245. DOI: 10.1049/el:20073333  0.96
2007 Jallipalli A, Kutty MN, Balakrishnan G, Tatebayashi J, Nuntawong N, Huang SH, Dawson LR, Huffaker DL, Mi Z, Bhattacharya P. 1.54μm GaSb/AlGaSb multi-quantum-well monolithic laser at 77 K grown on miscut Si substrate using interfacial misfit arrays Electronics Letters. 43: 1198-1199. DOI: 10.1049/el:20072441  0.96
2007 Tatebayashi J, Laghumavarapu RB, Nuntawong N, Huffaker DL. Measurement of electro-optic coefficients of 1.3 μm self-assembled InAs/GaAs quantum dots Electronics Letters. 43: 410-412. DOI: 10.1049/el:20070245  0.96
2007 Jallipalli A, Balakrishnan G, Huang SH, Khoshakhlagh A, Dawson LR, Huffaker DL. Atomistic modeling of strain distribution in self-assembled interfacial misfit dislocation (IMF) arrays in highly mismatched III-V semiconductor materials Journal of Crystal Growth. 303: 449-455. DOI: 10.1016/j.jcrysgro.2006.12.032  0.96
2006 Nuntawong N, Tatebayashi J, Wong PS, Xin YC, Hains CP, Huang S, Lester LF, Huffaker DL. Strain-compensation in closely-stacked quantum dot active regions grown by metal organic chemical vapor deposition Proceedings of Spie - the International Society For Optical Engineering. 6129. DOI: 10.1117/12.656492  0.96
2006 Balakrishnan G, Jallipalli A, Rotella P, Huang S, Khoshakhlagh A, Amtout A, Krishna S, Dawson LR, Huffaker DL. Room-temperature optically pumped (Al)GaSb vertical-cavity surface-emitting laser monolithically grown on an Si(1 0 0) substrate Ieee Journal On Selected Topics in Quantum Electronics. 12: 1636-1641. DOI: 10.1109/JSTQE.2006.885342  0.96
2006 Mehta M, Balakrishnan G, Huang S, Khoshakhlagh A, Jallipalli A, Patel P, Kutty MN, Dawson LR, Huffaker DL. GaSb quantum-well-based "buffer-free" vertical light emitting diode monolithically embedded within a GaAs cavity incorporating interfacial misfit arrays Applied Physics Letters. 89. DOI: 10.1063/1.2396897  0.96
2006 Tatebayashi J, Khoshakhlagh A, Huang SH, Dawson LR, Balakrishnan G, Huffaker DL. Formation and optical characteristics of strain-relieved and densely stacked GaSbGaAs quantum dots Applied Physics Letters. 89. DOI: 10.1063/1.2390654  0.96
2006 Balakrishnan G, Tatebayashi J, Khoshakhlagh A, Huang SH, Jallipalli A, Dawson LR, Huffaker DL. III/V ratio based selectivity between strained Stranski-Krastanov and strain-free GaSb quantum dots on GaAs Applied Physics Letters. 89. DOI: 10.1063/1.2362999  0.96
2006 Tatebayashi J, Nuntawong N, Xin YC, Wong PS, Huang SH, Hains CP, Lester LF, Huffaker DL. Ground-state lasing of stacked InAs/GaAs quantum dots with GaP strain-compensation layers grown by metal organic chemical vapor deposition Applied Physics Letters. 88. DOI: 10.1063/1.2208553  0.96
2006 Huang SH, Balakrishnan G, Khoshakhlagh A, Jallipalli A, Dawson LR, Huffaker DL. Strain relief by periodic misfit arrays for low defect density GaSb on GaAs Applied Physics Letters. 88. DOI: 10.1063/1.2172742  0.96
2006 Huffaker DL, Hains CP, Nuntawong N, Xin YC, Wong PS, Xue L, Brueck SRJ, Lester L. Temperature-dependent photoluminescence from patterned InAs quantum dots formed using metalorganic chemical vapor epitaxy Journal of Applied Physics. 99. DOI: 10.1063/1.2165415  0.96
2006 Balakrishnan G, Huang SH, Khoshakhlagh A, Jallipalli A, Rotella P, Amtout A, Krishna S, Haines CP, Dawson LR, Huffaker DL. Room-temperature optically-pumped GaSb quantum well based VCSEL monolithically grown on Si (100) substrate Electronics Letters. 42: 350-352. DOI: 10.1049/el:20064286  0.96
2006 Mi Z, Yang J, Bhattacharya P, Huffaker DL. Self-organised quantum dots as dislocation filters: The case of GaAs-based lasers on silicon Electronics Letters. 42: 121-123. DOI: 10.1049/el:20063582  0.96
2006 Timm R, Lenz A, Eisele H, Ivanova L, Pötschke K, Pohl UW, Bimberg D, Balakrishnan G, Huffaker DL, Dähne M. Onset of GaSb/GaAs quantum dot formation Physica Status Solidi (C) Current Topics in Solid State Physics. 3: 3971-3974. DOI: 10.1002/pssc.200671605  0.96
2006 Jallipalli A, Balakrishnan G, Huang SH, Khoshakhlagh A, Dawson LR, Huffaker DL. Modeling misfit dislocation arrays for the growth of low-defect density AlSb on Si Materials Research Society Symposium Proceedings. 934: 26-31.  0.96
2006 Tatebayashi J, Nuntawong N, Xin YC, Wong PS, Huang S, Hains CP, Lester LF, Huffaker DL. Low threshold current operation of stacked InAs/GaAs quantum dot lasers with GaP strain-compensation layers Conference Proceedings - International Conference On Indium Phosphide and Related Materials. 2006: 108-111.  0.96
2006 Tatebayashi J, Balakrishnan G, Huang SH, Khoshakhlagh A, Mehta M, Dawson LR, Huffaker DL. Optical properties of Stranski-Krastanow and strain-free GaSb quantum dots on GaAs substrates - Towards Sb-based type-II quantum dot emitters 2006 6th Ieee Conference On Nanotechnology, Ieee-Nano 2006. 1: 119-122.  0.96
2005 Balakrishnan G, Huang S, Khoshakhlagh A, Dawson LR, Xin YC, Conlin P, Huffaker DL. High quality AlSb bulk material on Si substrates using a monolithic self-assembled quantum dot nucleation layer Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 23: 1010-1012. DOI: 10.1116/1.1924424  0.96
2005 Balakrishnan G, Huang S, Khoshakhlagh A, Dawson LR, Xin YC, Lester L, Huffaker DL. Monolithic integration of Sb-based photopumped lasers on Si Conference Proceedings - Lasers and Electro-Optics Society Annual Meeting-Leos. 2005: 674. DOI: 10.1109/LEOS.2005.1548185  0.96
2005 Nuntawong N, Huang S, Jiang YB, Hains CP, Huffaker DL. Defect dissolution in strain-compensated stacked InAs/GaAs quantum dots grown by metalorganic chemical vapor deposition Applied Physics Letters. 87. DOI: 10.1063/1.2042638  0.96
2005 Nuntawong N, Birudavolu S, Hains CP, Huang S, Xin YC, Huffaker DL. Effect of InGaP strain-compensation layers in stacked 1.3 μm InAs/GaAs quantum dot active regions grown by MOCVD Aip Conference Proceedings. 772: 603-604. DOI: 10.1063/1.1994251  0.96
2005 Nuntawong N, Xin YC, Birudavolu S, Wong PS, Huang S, Hains CP, Huffaker DL. Quantum dot lasers based on a stacked and strain-compensated active region grown by metal-organic chemical vapor deposition Applied Physics Letters. 86: 1-3. DOI: 10.1063/1.1926413  0.96
2005 Balakrishnan G, Huang S, Dawson LR, Xin YC, Conlin P, Huffaker DL. Growth mechanisms of highly mismatched AlSb on a Si substrate Applied Physics Letters. 86: 1-3. DOI: 10.1063/1.1850611  0.96
2005 Balakrishnan G, Huang SH, Khoshakhlagh A, Hill P, Amtout A, Krishna S, Donati GP, Dawson LR, Huffaker DL. Room-temperature optically-pumped InGaSb quantum well lasers monolithically grown on Si(100) substrate Electronics Letters. 41: 531-532. DOI: 10.1049/el:20050564  0.96
2005 Birudavolu S, Luong SQ, Nuntawong N, Xin YC, Hains CP, Huffaker DL. In-situ mask removal in selective area epitaxy using metal organic chemical vapor deposition Journal of Crystal Growth. 277: 97-103. DOI: 10.1016/j.jcrysgro.2005.01.066  0.96
2004 Nuntawong N, Birudavolu S, Hains CP, Huang S, Xu H, Huffaker DL. Effect of strain-compensation in stacked 1.3 μm InAs/GaAs quantum dot active regions grown by metalorganic chemical vapor deposition Applied Physics Letters. 85: 3050-3052. DOI: 10.1063/1.1805707  0.96
2004 Birudavolu S, Nuntawong N, Balakrishnan G, Xin YC, Huang S, Lee SC, Brueck SRJ, Hains CP, Huffaker DL. Selective area growth of InAs quantum dots formed on a patterned GaAs substrate Applied Physics Letters. 85: 2337-2339. DOI: 10.1063/1.1792792  0.96
2004 Balakrishnan G, Huang S, Rotter TJ, Stintz A, Dawson LR, Malloy KJ, Xu H, Huffaker DL. 2.0 μm wavelength InAs quantum dashes grown on a GaAs substrate using a metamorphic buffer layer Applied Physics Letters. 84: 2058-2060. DOI: 10.1063/1.1669067  0.96
2004 Chow WW, Huffaker DL. Dephasing effects on laser gain in shallow and deep semiconductor quantum dots Conference Digest - Ieee International Semiconductor Laser Conference. 91-92.  0.96
2004 Birudavolu S, Luong SQ, Hains CP, Huffaker DL. Patterned InAs quantum dot formation Conference Proceedings - Lasers and Electro-Optics Society Annual Meeting-Leos. 1: 69.  0.96
2004 Balakrishnan G, Huang S, Dawson LR, Huffaker DL. Analysis of atomic structure in InAs quantum dashes grown on AlGaAsSb metamorphic buffers Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 22: 1529-1533.  0.96
2003 Huffaker DL, Birudavolu S, Wong PS, Huang S, El-Emawy AA. MOCVD-Grown InAs/GaAs Quantum Dots Proceedings of Spie - the International Society For Optical Engineering. 4999: 478-485. DOI: 10.1117/12.488041  0.96
2003 Xin YC, Vaughn LG, Dawson LR, Stintz A, Lin Y, Lester LF, Huffaker DL. InAs quantum-dot GaAs-based lasers grown on AlGaAsSb metamorphic buffers Journal of Applied Physics. 94: 2133-2135. DOI: 10.1063/1.1582229  0.96
2003 El-Emawy AA, Birudavolu S, Wong PS, Jiang YB, Xu H, Huang S, Huffaker DL. Formation trends in quantum dot growth using metalorganic chemical vapor deposition Journal of Applied Physics. 93: 3529-3534. DOI: 10.1063/1.1543647  0.96
2003 El-Emawy AA, Birudavolu S, Huang S, Xu H, Huffaker DL. Selective surface migration for defect-free quantum dot ensembles using metal organic chemical vapor deposition Journal of Crystal Growth. 255: 213-219. DOI: 10.1016/S0022-0248(03)01186-2  0.96
2003 Huffaker DL, Balakrishnan G, Huang S, Dawson LR, Hains CP. Crystallographic anisotropy in InAs quantum dashes on GaAs Conference Proceedings - Lasers and Electro-Optics Society Annual Meeting-Leos. 2: 698-699.  0.96
2003 Balakrishnan G, Birudavolu S, Dawson LR, Huffaker DL, Xu H, Jiang Y. 1.6 μm emission from InAs quantum dots grown on a GaAs substrate using an AlGaAsSb metamorphic buffer Materials Research Society Symposium - Proceedings. 737: 19-24.  0.96
2001 Brick P, Ell C, Hübner M, Lee ES, Lyngnes O, Prineas JP, Khitrova G, Gibbs HM, Kira M, Johnke F, Koch SW, Deppe DG, Huffaker DL. Quantum correlations in a semiconductor microcavity Technical Digest - Summaries of Papers Presented At the Quantum Electronics and Laser Science Conference, Qels 2001. 232. DOI: 10.1109/QELS.2001.962146  0.96
2001 Yoshie T, Scherer A, Chen H, Huffaker D, Deppe D. Optical characterization of two-dimensional photonic crystal cavities with indium arsenide quantum dot emitters Applied Physics Letters. 79: 114-116. DOI: 10.1063/1.1377851  0.96
2001 Boggess TF, Zhang L, Deppe DG, Huffaker DL, Cao C. Spectral engineering of carrier dynamics in In(Ga)As self-assembled quantum dots Applied Physics Letters. 78: 276-278. DOI: 10.1063/1.1337638  0.96
2001 Lee ES, Ell C, Brick P, Spiegelberg C, Gibbs HM, Khitrova G, Deppe DG, Huffaker DL. Saturation of normal-mode coupling in aluminum-oxide-aperture semiconductor nanocavities Journal of Applied Physics. 89: 807-809. DOI: 10.1063/1.1330758  0.96
2000 Ell C, Brick P, Hübner M, Lee ES, Lyngnes O, Prineas JP, Khitrova G, Gibbs HM, Kira M, Jahnke F, Koch SW, Deppe DG, Huffaker DL. Quantum correlations in the nonperturbative regime of semiconductor microcavities Physical Review Letters. 85: 5392-5395. DOI: 10.1103/PhysRevLett.85.5392  0.96
2000 Park G, Shchekin OB, Huffaker DL, Deppe DG. InGaAs quantum dot lasers with sub-milliamp thresholds and ultra-low threshold current density below room temperature Electronics Letters. 36: 1283-1284. DOI: 10.1049/el:20000909  0.96
1999 Deppe DG, Graham LA, Huffaker DL. Enhanced spontaneous emission using quantum dots and an apertured microcavity Ieee Journal of Quantum Electronics. 35: 1502-1508. DOI: 10.1109/3.792581  0.96
1999 Deppe DG, Huffaker DL, Csutak S, Zou Z, Park G, Shchekin OB. Spontaneous emission and threshold characteristics of 1.3-μm InGaAs-GaAs quantum-dot GaAs-based lasers Ieee Journal of Quantum Electronics. 35: 1238-1246. DOI: 10.1109/3.777226  0.96
1998 Campbell JC, Bean JC, Deppe DG, Huffaker DL, Streetman BG. Resonant-cavity photodetectors: Performance and functionality Proceedings of Spie - the International Society For Optical Engineering. 3290: 34-40. DOI: 10.1117/12.298260  0.96
1998 Park G, Shchekin OB, Huffaker DL, Deppe DG. Lasing from InGaAs/GaAs quantum dots with extended wavelength and well-defined harmonic-oscillator energy levels Applied Physics Letters. 73: 3351-3353. DOI: 10.1063/1.122766  0.96
1998 Huffaker DL, Deppe DG. Electroluminescence efficiency of 1.3 μm wavelength InGaAs/GaAs quantum dots Applied Physics Letters. 73: 520-522. DOI: 10.1063/1.121920  0.96
1998 Huffaker DL, Deppe DG. Electron and hole tunneling in a moderate density quantum dot ensemble with shallow confinement potentials Applied Physics Letters. 73: 366-368. DOI: 10.1063/1.121836  0.96
1998 Graham LA, Huffaker DL, Deng Q, Deppe DG. Controlled spontaneous lifetime in microcavity confined InGaAlAs/GaAs quantum dots Applied Physics Letters. 72: 1670-1672. DOI: 10.1063/1.121148  0.96
1998 Huffaker DL, Graham LA, Deppe DG. Ultranarrow electroluminescence spectrum from the ground state of an ensemble of self-organized quantum dots Applied Physics Letters. 72: 214-216. DOI: 10.1063/1.120689  0.96
1995 Deng H, Lin CC, Huffaker DL, Deng Q, Deppe DG, Rogers TJ. Temperature dependence of the transverse lasing mode in vertical-cavity lasers Journal of Applied Physics. 77: 2279-2286. DOI: 10.1063/1.358816  0.96
1993 Lei C, Pinzone CJ, Huang Z, Huffaker DL, Deppe DG, Dupuis RD. Room temperature spontaneous emission in five-micron-long Fabry-Pérot vertical cavities Journal of Applied Physics. 73: 3153-3157. DOI: 10.1063/1.352984  0.96
1992 Huffaker DL, Huang Z, Lei C, Deppe DG, Pinzone CJ, Neff JG, Dupuis RD. Effect on spontaneous emission of quantum well placement in a short vertical cavity Applied Physics Letters. 61: 877-879. DOI: 10.1063/1.107775  0.96
1992 Deppe DG, Huffaker DL, Rogers TJ, Lei C, Huang Z, Streetman BG. First-order phase transition in a laser threshold Applied Physics Letters. 60: 3081-3083. DOI: 10.1063/1.106758  0.96
1992 Huffaker DL, Lei C, Deppe DG, Pinzone CJ, Neff JG, Dupuis RD. Controlled spontaneous emission in room-temperature semiconductor microcavities Applied Physics Letters. 60: 3203-3205. DOI: 10.1063/1.106739  0.96
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