Chenming Hu - Publications

Affiliations: 
Electrical Engineering and Computer Science University of California, Berkeley, Berkeley, CA 
Area:
Semiconductor Device Technologies

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Year Citation  Score
2021 Chang SJ, Teng CY, Lin YJ, Wu TM, Lee MH, Lin BH, Tang MT, Wu TS, Hu C, Tang EY, Tseng YC. Visualizing Ferroelectric Uniformity of HfZrO Films Using X-ray Mapping. Acs Applied Materials & Interfaces. PMID 34121385 DOI: 10.1021/acsami.1c08265  0.56
2021 Zhang Z, Qiu M, Du H, Li Q, Yu C, Gan W, Peng H, Xia B, Xiong X, Song X, Yang L, Hu C, Chen J, Yang C, Jiang X. Whole genome re-sequencing identifies unique adaption of single nucleotide polymorphism, Insertion/Deletion and structure variation related to hypoxia in Tibetan chickens. Gene Expression Patterns : Gep. 119181. PMID 34004346 DOI: 10.1016/j.gep.2021.119181  0.72
2021 Yu C, Qiu M, Zhang Z, Song X, Du H, Peng H, Li Q, Yang L, Xiong X, Xia B, Hu C, Chen J, Jiang X, Yang C. Transcriptome sequencing reveals genes involved in cadmium-triggered oxidative stress in the chicken heart. Poultry Science. 100: 100932. PMID 33652545 DOI: 10.1016/j.psj.2020.12.029  0.72
2020 Qiu M, Yang C, Du H, Li Q, Zhang Z, Xiong X, Yu C, Song X, Hu C, Xia B, Yang L, Peng H, Liu L, Jiang X. Whole-genome resequencing reveals aberrant autosomal SNPs affect chicken feathering rate. Animal Biotechnology. 1-13. PMID 33342337 DOI: 10.1080/10495398.2020.1846545  0.72
2020 Zhang Y, Li P, Rong J, Ge Y, Hu C, Bai X, Shi W. Small molecule CDS-3078 induces G/M phase arrest and mitochondria-mediated apoptosis in HeLa cells. Experimental and Therapeutic Medicine. 20: 284. PMID 33209128 DOI: 10.3892/etm.2020.9414  0.72
2020 Liang Q, Yu S, Chen S, Yang Y, Li S, Hu C, Huang D, Kuang L, Li D. Association of Changes in Metabolic Syndrome Status With the Incidence of Thyroid Nodules: A Prospective Study in Chinese Adults. Frontiers in Endocrinology. 11: 582. PMID 32973687 DOI: 10.3389/fendo.2020.00582  0.68
2020 Zhang Z, Qiu M, Du H, Li Q, Yu C, Gan W, Peng H, Xia B, Xiong X, Song X, Yang L, Hu C, Chen J, Yang C, Jiang X. Small RNA sequencing reveals miRNAs important for hypoxic adaptation in the Tibetan chicken. British Poultry Science. PMID 32631087 DOI: 10.1080/00071668.2020.1792835  0.72
2020 Zhang Z, Qiu M, Du H, Li Q, Yu C, Gan W, Peng H, Xia B, Xiong X, Song X, Yang L, Hu C, Chen J, Yang C, Jiang X. Identification of long noncoding RNAs involved in adaptability to chronic hypoxic by whole transcriptome sequencing. 3 Biotech. 10: 269. PMID 32523863 DOI: 10.1007/s13205-020-02272-8  0.72
2020 Cheema SS, Kwon D, Shanker N, Dos Reis R, Hsu SL, Xiao J, Zhang H, Wagner R, Datar A, McCarter MR, Serrao CR, Yadav AK, Karbasian G, Hsu CH, Tan AJ, ... ... Hu C, et al. Publisher Correction: Enhanced ferroelectricity in ultrathin films grown directly on silicon. Nature. 581: E5. PMID 32433606 DOI: 10.1038/S41586-020-2297-6  0.48
2020 Cheema SS, Kwon D, Shanker N, Dos Reis R, Hsu SL, Xiao J, Zhang H, Wagner R, Datar A, McCarter MR, Serrao CR, Yadav AK, Karbasian G, Hsu CH, Tan AJ, ... ... Hu C, et al. Enhanced ferroelectricity in ultrathin films grown directly on silicon. Nature. 580: 478-482. PMID 32322080 DOI: 10.1038/S41586-020-2208-X  0.48
2020 Qiu M, Zhang Z, Xiong X, Du H, Li Q, Yu C, Gan W, Liu H, Peng H, Xia B, Chen J, Hu C, Song X, Yang L, Jiang X, et al. High-throughput sequencing analysis identified microRNAs associated with egg production in ducks ovaries. Peerj. 8: e8440. PMID 32117609 DOI: 10.7717/peerj.8440  0.72
2020 Yang C, Xiong X, Jiang X, Du H, Li Q, Liu H, Gan W, Yu C, Peng H, Xia B, Chen J, Song X, Yang L, Hu C, Qiu M, et al. Novel miRNA identification and comparative profiling of miRNA regulations revealed important pathways in Jinding duck ovaries by small RNA sequencing. 3 Biotech. 10: 38. PMID 31988832 DOI: 10.1007/s13205-019-2015-y  0.72
2020 Zhang Z, Qiu M, Du H, Li Q, Gan W, Xiong X, Yu C, Peng H, Xia B, Song X, Yang L, Hu C, Chen J, Yang C, Jiang X. Small RNA sequencing of pectoral muscle tissue reveals microRNA-mediated gene modulation in chicken muscle growth. Journal of Animal Physiology and Animal Nutrition. PMID 31957920 DOI: 10.1111/jpn.13312  0.72
2020 Kushwaha P, Dasgupta A, Kao M, Agarwal H, Salahuddin S, Hu C. Design Optimization Techniques in Nanosheet Transistor for RF Applications Ieee Transactions On Electron Devices. 1-6. DOI: 10.1109/Ted.2020.3019022  0.4
2020 Kao M, Pahwa G, Dasgupta A, Salahuddin S, Hu C. Analysis and Modeling of Polarization Gradient Effect on Negative Capacitance FET Ieee Transactions On Electron Devices. 1-5. DOI: 10.1109/Ted.2020.3013569  0.4
2020 Chen Y, Su C, Yang T, Hu C, Wu T. Improved TDDB Reliability and Interface States in 5-nm Hf 0.5 Zr 0.5 O 2 Ferroelectric Technologies Using NH 3 Plasma and Microwave Annealing Ieee Transactions On Electron Devices. 67: 1581-1585. DOI: 10.1109/Ted.2020.2973652  0.88
2020 Dasgupta A, Parihar SS, Agarwal H, Kushwaha P, Chauhan YS, Hu C. Compact Model for Geometry Dependent Mobility in Nanosheet FETs Ieee Electron Device Letters. 41: 313-316. DOI: 10.1109/Led.2020.2967782  0.36
2020 You WX, Su P, Hu C. A New 8T Hybrid Nonvolatile SRAM With Ferroelectric FET Ieee Journal of the Electron Devices Society. 8: 171-175. DOI: 10.1109/Jeds.2020.2972319  0.44
2020 Lin YJ, Teng CY, Chang SJ, Liao YF, Hu C, Su CJ, Tseng YC. Role of electrode-induced oxygen vacancies in regulating polarization wake-up in ferroelectric capacitors Applied Surface Science. 528: 147014. DOI: 10.1016/J.Apsusc.2020.147014  0.64
2019 Zhang Y, Ge Y, Shi W, Hu C, Bai X, Rong J, Yu M. CDS-1548 induces apoptosis in HeLa cells by activating caspase 3. Oncology Letters. 18: 1881-1887. PMID 31423257 DOI: 10.3892/ol.2019.10511  0.72
2019 Yadav AK, Nguyen KX, Hong Z, García-Fernández P, Aguado-Puente P, Nelson CT, Das S, Prasad B, Kwon D, Cheema S, Khan AI, Hu C, Íñiguez J, Junquera J, Chen LQ, et al. Author Correction: Spatially resolved steady-state negative capacitance. Nature. PMID 30971827 DOI: 10.1038/S41586-019-1106-6  0.4
2019 Yadav AK, Nguyen KX, Hong Z, García-Fernández P, Aguado-Puente P, Nelson CT, Das S, Prasad B, Kwon D, Cheema S, Khan AI, Hu C, Íñiguez J, Junquera J, Chen LQ, et al. Spatially resolved steady-state negative capacitance. Nature. PMID 30643207 DOI: 10.1038/S41586-018-0855-Y  0.4
2019 Zhang Z, Du H, Yang C, Li Q, Qiu M, Song X, Yu C, Jiang X, Liu L, Hu C, Xia B, Xiong X, Yang L, Peng H, Jiang X. Comparative transcriptome analysis reveals regulators mediating breast muscle growth and development in three chicken breeds. Animal Biotechnology. 1-9. PMID 30601081 DOI: 10.1080/10495398.2018.1476377  0.72
2019 Gupta C, Agarwal H, Goel R, Hu C, Chauhan YS. Improved Modeling of Bulk Charge Effect for BSIM-BULK Model Ieee Transactions On Electron Devices. 66: 2850-2853. DOI: 10.1109/Ted.2019.2910107  0.36
2019 You W, Su P, Hu C. Evaluation of NC-FinFET Based Subsystem-Level Logic Circuits Ieee Transactions On Electron Devices. 66: 2004-2009. DOI: 10.1109/Ted.2019.2898445  0.44
2019 Gupta C, Mohamed N, Agarwal H, Goel R, Hu C, Chauhan YS. Accurate and Computationally Efficient Modeling of Nonquasi Static Effects in MOSFETs for Millimeter-Wave Applications Ieee Transactions On Electron Devices. 66: 44-51. DOI: 10.1109/Ted.2018.2854671  0.36
2019 Chen Y, Su C, Hu C, Wu T. Effects of Annealing on Ferroelectric Hafnium–Zirconium–Oxide-Based Transistor Technology Ieee Electron Device Letters. 40: 467-470. DOI: 10.1109/Led.2019.2895833  0.68
2018 Zhang Z, Du H, Bai L, Yang C, Li Q, Li X, Qiu M, Yu C, Jiang Z, Jiang X, Liu L, Hu C, Xia B, Xiong X, Song X, et al. Whole genome bisulfite sequencing reveals unique adaptations to high-altitude environments in Tibetan chickens. Plos One. 13: e0193597. PMID 29561872 DOI: 10.1371/journal.pone.0193597  0.72
2018 Gupta C, Dey S, Agarwal H, Goel R, Hu C, Chauhan YS. Analysis and Modeling of Temperature and Bias Dependence of Current Mismatch in Halo-Implanted MOSFETs Ieee Transactions On Electron Devices. 65: 3608-3616. DOI: 10.1109/Ted.2018.2853989  0.36
2018 Dabhi CK, Dasgupta A, Kushwaha P, Agarwal H, Hu C, Chauhan YS. Modeling of Induced Gate Thermal Noise Including Back-Bias Effect in FDSOI MOSFET Ieee Microwave and Wireless Components Letters. 28: 597-599. DOI: 10.1109/Lmwc.2018.2834507  0.36
2018 Kushwaha P, Agarwal H, Lin Y-, Kao M-, Duarte J-, Chang H-, Wong W, Fan J, Xiayu, Chauhan YS, Salahuddin S, Hu C. Modeling of Advanced RF Bulk FinFETs Ieee Electron Device Letters. 39: 791-794. DOI: 10.1109/Led.2018.2825422  0.4
2018 Luc QH, Yang KS, Lin JW, Chang CC, Do HB, Huynh SH, Ha MTH, Nguyen TA, Lin YC, Hu C, Chang EY. In 0.53 Ga 0.47 As FinFET and GAA-FET With Remote-Plasma Treatment Ieee Electron Device Letters. 39: 339-342. DOI: 10.1109/Led.2018.2798589  0.32
2017 Gupta C, Agarwal H, Lin YK, Ito A, Hu C, Chauhan YS. Analysis and modeling of zero-threshold voltage native devices with industry standard BSIM6 model Japanese Journal of Applied Physics. 56. DOI: 10.7567/Jjap.56.04Cd09  0.36
2017 Sachid AB, Chen M, Hu C. Bulk FinFET With Low- $\kappa $ Spacers for Continued Scaling Ieee Transactions On Electron Devices. 64: 1861-1864. DOI: 10.1109/Ted.2017.2664798  0.76
2017 Agarwal H, Gupta C, Dey S, Khandelwal S, Hu C, Chauhan YS. Anomalous Transconductance in Long Channel Halo Implanted MOSFETs: Analysis and Modeling Ieee Transactions On Electron Devices. 64: 376-383. DOI: 10.1109/Ted.2016.2640279  0.36
2017 Sachid AB, Huang Y, Chen Y, Chen C, Lu DD, Chen M, Hu C. FinFET With Encased Air-Gap Spacers for High-Performance and Low-Energy Circuits Ieee Electron Device Letters. 38: 16-19. DOI: 10.1109/Led.2016.2628768  0.76
2016 Desai SB, Madhvapathy SR, Sachid AB, Llinas JP, Wang Q, Ahn GH, Pitner G, Kim MJ, Bokor J, Hu C, Wong HP, Javey A. MoS2 transistors with 1-nanometer gate lengths. Science (New York, N.Y.). 354: 99-102. PMID 27846499 DOI: 10.1126/Science.Aah4698  0.64
2016 Hsieh HJ, Hu CC, Lu TW, Lu HL, Kuo MY, Kuo CC, Hsu HC. Evaluation of three force-position hybrid control methods for a robot-based biological joint-testing system. Biomedical Engineering Online. 15: 62. PMID 27268070 DOI: 10.1186/s12938-016-0195-9  0.64
2016 Fan L, Hu C, Chen J, Cen P, Wang J, Li L. Interaction between Mesenchymal Stem Cells and B-Cells. International Journal of Molecular Sciences. 17. PMID 27164080 DOI: 10.3390/ijms17050650  0.52
2016 Jiang J, Li Y, Hu C, Zhou J, Yang H, Cao L, Deng P. Primary pleural intermediate hemangioendothelioma with pleural effusion as the only manifestation. Journal of Thoracic Disease. 8: E369-73. PMID 27162702 DOI: 10.21037/jtd.2016.03.25  0.48
2016 Yao H, Hu C, Yin L, Tao X, Xu L, Qi Y, Han X, Xu Y, Zhao Y, Wang C, Peng J. Dioscin reduces lipopolysaccharide-induced inflammatory liver injury via regulating TLR4/MyD88 signal pathway. International Immunopharmacology. 36: 132-141. PMID 27135544 DOI: 10.1016/j.intimp.2016.04.023  0.36
2016 Zhang L, Liu SY, Zhang J, Zhang JK, Hu CX, Liu YD. Respiratory toxicity of cyanobacterial aphantoxins from Aphanizomenon flos-aquae DC-1 in the zebrafish gill. Aquatic Toxicology (Amsterdam, Netherlands). 176: 106-115. PMID 27130970 DOI: 10.1016/j.aquatox.2016.04.014  0.56
2016 Zhang R, Li L, Tong D, Hu C. Microwave-enhanced pyrolysis of natural algae from water blooms. Bioresource Technology. 212: 311-317. PMID 27128164 DOI: 10.1016/j.biortech.2016.04.053  0.48
2016 Jiang X, Hu C, Arnovitz S, Bugno J, Yu M, Zuo Z, Chen P, Huang H, Ulrich B, Gurbuxani S, Weng H, Strong J, Wang Y, Li Y, Salat J, et al. miR-22 has a potent anti-tumour role with therapeutic potential in acute myeloid leukaemia. Nature Communications. 7: 11452. PMID 27116251 DOI: 10.1038/Ncomms11452  0.4
2016 Zhan XY, Hu CH, Zhu QY. Targeting single-nucleotide polymorphisms in the 16S rRNA gene to detect and differentiate Legionella pneumophila and non-Legionella pneumophila species. Archives of Microbiology. PMID 27112927 DOI: 10.1007/s00203-016-1228-2  0.92
2016 Duan P, Hu C, Butler HJ, Quan C, Chen W, Huang W, Tang S, Zhou W, Yuan M, Shi Y, Martin FL, Yang K. Effects of 4-Nonylphenol on spermatogenesis and induction of testicular apoptosis through oxidative stress-related pathways. Reproductive Toxicology (Elmsford, N.Y.). PMID 27109770 DOI: 10.1016/j.reprotox.2016.04.016  0.68
2016 Jing R, Li HQ, Hu CL, Jiang YP, Qin LP, Zheng CJ. Phytochemical and Pharmacological Profiles of Three Fagopyrum Buckwheats. International Journal of Molecular Sciences. 17. PMID 27104519 DOI: 10.3390/ijms17040589  0.36
2016 Weng CH, Hsu CW, Hu CC, Yen TH, Huang WH. Association Between Hemodiafiltration and Hypoalbuminemia in Middle-Age Hemodialysis Patients. Medicine. 95: e3334. PMID 27082584 DOI: 10.1097/MD.0000000000003334  0.48
2016 Chen T, Ren C, Wang Y, Luo P, Jiang X, Huang W, Chen C, Hu C. Molecular cloning, inducible expression and antibacterial analysis of a novel i-type lysozyme (lyz-i2) in Pacific white shrimp, Litopenaeus vannamei. Fish & Shellfish Immunology. PMID 27074443 DOI: 10.1016/j.fsi.2016.04.008  0.4
2016 Yan D, Wang J, Jiang F, Zhang R, Wang T, Wang S, Peng D, He Z, Chen H, Bao Y, Hu C, Jia W. A causal relationship between uric acid and diabetic macrovascular disease in Chinese type 2 diabetes patients: A Mendelian randomization analysis. International Journal of Cardiology. 214: 194-199. PMID 27064641 DOI: 10.1016/j.ijcard.2016.03.206  0.48
2016 Shen J, Hu C, Yu S, Huang K, Xie Z. A meta-analysis of percutenous compression plate versusintramedullary nail for treatment of intertrochanteric HIP fractures. International Journal of Surgery (London, England). PMID 27063859 DOI: 10.1016/j.ijsu.2016.03.065  0.6
2016 Sun Y, Cheng Y, Hao X, Wang J, Hu C, Han B, Liu X, Zhang L, Wan H, Xia Z, Liu Y, Li W, Hou M, Zhang H, Xiu Q, et al. Randomized phase III trial of amrubicin/cisplatin versus etoposide/cisplatin as first-line treatment for extensive small-cell lung cancer. Bmc Cancer. 16: 265. PMID 27061082 DOI: 10.1186/s12885-016-2301-6  0.48
2016 Chen X, Tan M, Xie Z, Feng B, Zhao Z, Yang K, Hu C, Liao N, Wang T, Chen D, Xie F, Tang C. Inhibiting ROS-STAT3- dependent autophagy enhanced capsaicin-induced apoptosis in human hepatocellular carcinoma cells. Free Radical Research. 1-31. PMID 27043357 DOI: 10.3109/10715762.2016.1173689  0.36
2016 Li S, Hu C, Li J, Liu L, Jing W, Tang W, Tian W, Long J. Effect of miR-26a-5p on the Wnt/Ca(2+) Pathway and Osteogenic Differentiation of Mouse Adipose-Derived Mesenchymal Stem Cells. Calcified Tissue International. PMID 27040676 DOI: 10.1007/s00223-016-0137-3  0.52
2016 Yan Y, Zhou Z, Kong F, Feng S, Li X, Sha Y, Zhang G, Liu H, Zhang H, Wang S, Hu C, Zhang X. Roux-en-Y Gastric Bypass Surgery Suppresses Hepatic Gluconeogenesis and Increases Intestinal Gluconeogenesis in a T2DM Rat Model. Obesity Surgery. PMID 27038047 DOI: 10.1007/s11695-016-2157-5  0.48
2016 Tai Q, You P, Sang H, Liu Z, Hu C, Chan HL, Yan F. Efficient and stable perovskite solar cells prepared in ambient air irrespective of the humidity. Nature Communications. 7: 11105. PMID 27033249 DOI: 10.1038/ncomms11105  0.6
2016 Xu H, Diccianni JB, Katigbak J, Hu C, Zhang Y, Diao T. Bimetallic C-C Bond Forming Reductive Elimination from Nickel. Journal of the American Chemical Society. PMID 27005998 DOI: 10.1021/Jacs.6B00016  0.68
2016 Liu Y, Prentice KJ, Eversley JA, Hu C, Batchuluun B, Leavey K, Hansen JB, Wei DW, Cox B, Dai FF, Jia W, Wheeler MB. Rapid Elevation in CMPF May Act As a Tipping Point in Diabetes Development. Cell Reports. PMID 26997281 DOI: 10.1016/j.celrep.2016.02.079  0.36
2016 Chen M, Suzuki A, Thakkar S, Yu K, Hu C, Tong W. DILIrank: the largest reference drug list ranked by the risk for developing drug-induced liver injury in humans. Drug Discovery Today. PMID 26948801 DOI: 10.1016/j.drudis.2016.02.015  0.76
2016 Xu W, Liu J, Wang M, Chen L, Wang X, Hu C. Direct growth of MnOOH nanorod arrays on a carbon cloth for high-performance non-enzymatic hydrogen peroxide sensing. Analytica Chimica Acta. 913: 128-36. PMID 26944997 DOI: 10.1016/j.aca.2016.01.055  0.76
2016 Yong X, Tang B, Xiao YF, Xie R, Qin Y, Luo G, Hu CJ, Dong H, Yang SM. Helicobacter pylori upregulates Nanog and Oct4 via Wnt/β-catenin signaling pathway to promote cancer stem cell-like properties in human gastric cancer. Cancer Letters. PMID 26940070 DOI: 10.1016/J.Canlet.2016.02.032  0.32
2016 Lin Z, Izarova NV, Kondinski A, Xing X, Haider A, Fan L, Vankova N, Heine T, Keita B, Cao J, Hu C, Kortz U. Platinum-Containing Polyoxometalates: syn- and anti-[Pt(II) 2 (α-PW11 O39 )2 ](10-) and Formation of the Metal-Metal-Bonded di-Pt(III) Derivatives. Chemistry (Weinheim An Der Bergstrasse, Germany). PMID 26938929 DOI: 10.1002/Chem.201600555  0.52
2016 You YN, Skibber JM, Hu CY, Crane CH, Das P, Kopetz ES, Eng C, Feig BW, Rodriguez-Bigas MA, Chang GJ. Impact of multimodal therapy in locally recurrent rectal cancer. The British Journal of Surgery. PMID 26933792 DOI: 10.1002/bjs.10079  0.32
2016 Cheng H, Ye M, Zhao F, Hu C, Zhao Y, Liang Y, Chen N, Chen S, Jiang L, Qu L. A General and Extremely Simple Remote Approach toward Graphene Bulks with In Situ Multifunctionalization. Advanced Materials (Deerfield Beach, Fla.). PMID 26932679 DOI: 10.1002/Adma.201505431  0.6
2016 Tan Y, Hu C, Liu D. An Unusual Gastric Mass. Gastroenterology. PMID 26930013 DOI: 10.1053/j.gastro.2016.01.003  0.44
2016 Tang S, Zhang R, Jiang F, Wang J, Chen M, Peng D, Yan J, Wang S, Bao Y, Hu C, Jia W. Association between FNDC5 genetic variants and proliferative diabetic retinopathy in a Chinese population. Clinical and Experimental Pharmacology & Physiology. PMID 26926664 DOI: 10.1111/1440-1681.12566  0.48
2016 Yuning W, Wei Z, Xiaoyue Z, Fang W, Mei Z, Xialei F, Yaozuo Y, Changqin H, Xiaolan D, Adams E. Improved liquid chromatography combined with pulsed electrochemical detection for the analysis of etimicin sulfate. Journal of Separation Science. PMID 26924270 DOI: 10.1002/jssc.201501317  0.4
2016 Kuan YC, Wu D, Huang KW, Chi NF, Hu CJ, Chung CC, Tam KW, Huang YH. Effects of Modafinil and Armodafinil in Patients With Obstructive Sleep Apnea: A Meta-Analysis of Randomized Controlled Trials. Clinical Therapeutics. PMID 26923035 DOI: 10.1016/j.clinthera.2016.02.004  0.44
2016 Guo Y, Zhang L, Li F, Hu CP, Zhang Z. Restoration of sirt1 function by pterostilbene attenuates hypoxia-reoxygenation injury in cardiomyocytes. European Journal of Pharmacology. PMID 26921129 DOI: 10.1016/j.ejphar.2016.02.052  0.32
2016 Zhao F, Bi L, Wang WJ, Wu XS, Li YF, Gong FF, Lu SS, Feng F, Qian ZZ, Hu CY, Wu YL, Sun YH. Mutations of glucocerebrosidase gene and susceptibility to Parkinson's disease: an updated meta-analysis in an European population. Neuroscience. PMID 26868973 DOI: 10.1016/j.neuroscience.2016.02.007  0.48
2016 Bakaul SR, Serrao CR, Lee M, Yeung CW, Sarker A, Hsu SL, Yadav AK, Dedon L, You L, Khan AI, Clarkson JD, Hu C, Ramesh R, Salahuddin S. Single crystal functional oxides on silicon. Nature Communications. 7: 10547. PMID 26853112 DOI: 10.1038/Ncomms10547  0.4
2016 Han L, Yang L, Wang H, Hu X, Chen Z, Hu C. Sustaining reactivity of Fe(0) for nitrate reduction via electron transfer between dissolved Fe(2+) and surface iron oxides. Journal of Hazardous Materials. 308: 208-215. PMID 26835898 DOI: 10.1016/J.Jhazmat.2016.01.047  0.4
2016 Sachid AB, Tosun M, Desai SB, Hsu CY, Lien DH, Madhvapathy SR, Chen YZ, Hettick M, Kang JS, Zeng Y, He JH, Chang EY, Chueh YL, Javey A, Hu C. Monolithic 3D CMOS Using Layered Semiconductors. Advanced Materials (Deerfield Beach, Fla.). PMID 26833783 DOI: 10.1002/Adma.201505113  1
2016 Chao MR, Shih YM, Hsu YW, Liu HH, Chang YJ, Lin BH, Hu CW. Urinary nitrite/nitrate ratio measured by isotope-dilution LC-MS/MS as a tool to screen for urinary tract infections. Free Radical Biology & Medicine. PMID 26829019 DOI: 10.1016/j.freeradbiomed.2016.01.025  0.4
2016 Hu C, Dong T, Li R, Lu J, Wei X, Liu P. Emodin inhibits epithelial to mesenchymal transition in epithelial ovarian cancer cells by regulation of GSK-3β/β-catenin/ZEB1 signaling pathway. Oncology Reports. PMID 26820690 DOI: 10.3892/or.2016.4591  0.4
2016 Li P, Yin YL, Zhu ML, Pan GP, Zhao FR, Lu JX, Liu Z, Wang SX, Hu CP. Chronic administration of isocarbophos induces vascular cognitive impairment in rats. Journal of Cellular and Molecular Medicine. PMID 26818681 DOI: 10.1111/jcmm.12775  0.64
2016 Fan Y, Dong X, Yan L, Li D, Hua S, Hu C, Pan C. Evaluation of the toxicity of ionic liquids on trypsin: A mechanism study. Chemosphere. 148: 241-247. PMID 26807945 DOI: 10.1016/j.chemosphere.2016.01.033  0.36
2016 Wang L, Mo N, Pang R, Deng Q, Liu Y, Hu Y, Hu C, Wang L. Should quality goals be defined for multicenter laboratory testing? Lessons learned from a pilot survey on a national surveillance program for diabetes. International Journal For Quality in Health Care : Journal of the International Society For Quality in Health Care / Isqua. PMID 26796487 DOI: 10.1093/intqhc/mzv121  0.44
2016 Li M, Li JJ, Gu QH, An J, Cao LM, Yang HP, Hu CP. EGCG induces lung cancer A549 cell apoptosis by regulating Ku70 acetylation. Oncology Reports. PMID 26794417 DOI: 10.3892/or.2016.4587  0.48
2016 Hu C, Harber P, Su J. Predicting Future Protection of Respirator Users: Statistical Approaches and Practical Implications. Journal of Occupational and Environmental Hygiene. 1-24. PMID 26771896 DOI: 10.1080/15459624.2015.1125483  0.32
2016 Lin JC, Hu CY, Lo SL. Effect of surfactants on the degradation of perfluorooctanoic acid (PFOA) by ultrasonic (US) treatment. Ultrasonics Sonochemistry. 28: 130-5. PMID 26384891 DOI: 10.1016/j.ultsonch.2015.07.007  0.36
2016 Kompala BK, Kushwaha P, Agarwal H, Khandelwal S, Duarte JP, Hu C, Chauhan YS. Modeling of nonlinear thermal resistance in FinFETs Japanese Journal of Applied Physics. 55. DOI: 10.7567/Jjap.55.04Ed11  0.36
2016 Su YG, Zhang S, Hu C, Tang CS, Zhou W. An embeddable transmitter coil applied to electric vehicles powered by IPT system International Journal of Applied Electromagnetics and Mechanics. 50: 627-636. DOI: 10.3233/JAE-150149  0.36
2016 Chen J, Wu S, Hu C, Yang Y, Rajan N, Chen Y, Yang C, Li J, Chen W. Real-world hospital costs for nonchemotherapy drugs and nondrug care associated with platinum-based doublets in the first-line setting for advanced nonsquamous non-small-cell lung cancer in Chinese patients: A retrospective cohort study Clinicoeconomics and Outcomes Research. 8: 97-111. DOI: 10.2147/CEOR.S98548  0.68
2016 Xiao Z, Zhou Q, Song L, Li L, Cao Z, Hu C, Lu Y. Assessment of thermo-electrochemical performance on cathode materials for lithium ion cells International Journal of Electrochemical Science. 11: 2825-2834. DOI: 10.20964/110402825  0.52
2016 Hu C, Wang C, Wei L, Qiao X. Impact analysis of impeller parameters on the wind-energy utilization coefficient of vertical axis wind turbine Jixie Qiangdu/Journal of Mechanical Strength. 38: 317-321. DOI: 10.16579/j.issn.1001.9669.2016.02.019  0.44
2016 Zhou H, Zhang L, Qiao X, Hu C, Huang S, Wei L. Analysis of dynamic characteristics of the high-speed gear shaft system Jixie Qiangdu/Journal of Mechanical Strength. 38: 236-241. DOI: 10.16579/j.issn.1001.9669.2016.02.006  0.44
2016 Xu B, Ma H, Hu C, Li Z. Influence of cenospheres on properties of magnesium oxychloride cement-based composites Materials and Structures/Materiaux Et Constructions. 49: 1319-1326. DOI: 10.1617/S11527-015-0578-6  0.36
2016 Xu Y, Li CH, Hu CM, Hao G. Primula wawushanica sp. nov. (Primulaceae) from Sichuan, southwestern China Nordic Journal of Botany. 34: 156-158. DOI: 10.1111/njb.00894  0.4
2016 Hu C, Lin F, Wang X. Learning from exporting in China: A firm-specific instrumental approach Economics of Transition. 24: 299-334. DOI: 10.1111/ecot.12091  0.64
2016 Kushwaha P, Khandelwal S, Duarte JP, Hu C, Chauhan YS. RF Modeling of FDSOI Transistors Using Industry Standard BSIM-IMG Model Ieee Transactions On Microwave Theory and Techniques. 64: 1745-1751. DOI: 10.1109/Tmtt.2016.2557327  0.36
2016 Hu C, Zhao CA. Multi-Point Codes from Generalized Hermitian Curves Ieee Transactions On Information Theory. 62: 2726-2736. DOI: 10.1109/TIT.2016.2540658  0.4
2016 Pahwa G, Dutta T, Agarwal A, Khandelwal S, Salahuddin S, Hu C, Chauhan YS. Analysis and Compact Modeling of Negative Capacitance Transistor with High ON-Current and Negative Output Differential Resistance-Part I: Model Description Ieee Transactions On Electron Devices. DOI: 10.1109/Ted.2016.2614432  0.4
2016 Hsu C, Zeng Y, Chang C, Hu C, Chang EY. Study of Inherent Gate Coupling Nonuniformity of InAs/GaSb Vertical TFETs Ieee Transactions On Electron Devices. 63: 4267-4272. DOI: 10.1109/Ted.2016.2612830  0.56
2016 Lin YK, Khandelwal S, Medury AS, Agarwal H, Chang HL, Chauhan YS, Hu C. Modeling of Subsurface Leakage Current in Low VTH Short Channel MOSFET at Accumulation Bias Ieee Transactions On Electron Devices. DOI: 10.1109/Ted.2016.2544818  0.36
2016 Lin CI, Khan AI, Salahuddin S, Hu C. Effects of the Variation of Ferroelectric Properties on Negative Capacitance FET Characteristics Ieee Transactions On Electron Devices. DOI: 10.1109/Ted.2016.2514783  0.4
2016 Sachid AB, Chen M, Hu C. FinFET With High- $\kappa $ Spacers for Improved Drive Current Ieee Electron Device Letters. 37: 835-838. DOI: 10.1109/Led.2016.2572664  0.76
2016 Khandelwal S, Agarwal H, Kushwaha P, Duarte JP, Medury A, Chauhan YS, Salahuddin S, Hu C. Unified compact model covering drift-diffusion to ballistic carrier transport Ieee Electron Device Letters. 37: 134-137. DOI: 10.1109/Led.2015.2507519  0.4
2016 Khan AI, Chatterjee K, Duarte JP, Lu Z, Sachid A, Khandelwal S, Ramesh R, Hu C, Salahuddin S. Negative Capacitance in Short-Channel FinFETs Externally Connected to an Epitaxial Ferroelectric Capacitor Ieee Electron Device Letters. 37: 111-114. DOI: 10.1109/Led.2015.2501319  0.4
2016 Kushwaha P, Dasgupta A, Sahu Y, Khandelwal S, Hu C, Chauhan YS. Characterization of RF Noise in UTBB FD-SOI MOSFET Ieee Journal of the Electron Devices Society. 4: 379-386. DOI: 10.1109/Jeds.2016.2603181  0.36
2016 Ganeriwala MD, Yadav C, Mohapatra NR, Khandelwal S, Hu C, Chauhan YS. Modeling of Charge and Quantum Capacitance in Low Effective Mass III-V FinFETs Ieee Journal of the Electron Devices Society. 4: 396-401. DOI: 10.1109/Jeds.2016.2586116  0.36
2016 Team E, Qian J, Gong X, Wan B, Liu F, Wang M, Xu H, Hu C, Wang L, Li E, Zeng L, Ti A, Shen B, Lin S, Shao L, et al. Integrated Operating Scenario to Achieve 100-Second, High Electron Temperature Discharge on EAST Plasma Science and Technology. 18: 457-459. DOI: 10.1088/1009-0630/18/5/01  0.68
2016 Chen Y, Hu C, Xie Y. Analysis of Effects of the Arc Voltage on Arc Discharges in a Cathode Ion Source of Neutral Beam Injector Plasma Science and Technology. 18: 453-456. DOI: 10.1088/1009-0630/18/4/21  0.68
2016 Lin YF, Liu CH, Hu CH, Chiu CW. Non-chelating polydentate N -heterocyclic carbenes through assembly approaches Phosphorus, Sulfur and Silicon and the Related Elements. 191: 613-617. DOI: 10.1080/10426507.2015.1128918  0.48
2016 Cheng Z, Zang Y, Li Y, Li B, Hu C, Li H, Yang Y. A chiral luminescent liquid crystal with a tolane unit Liquid Crystals. 1-6. DOI: 10.1080/02678292.2016.1144809  0.36
2016 Shi B, Hu CH, Yu XH, Hu XX. New fuzzy neural network–Markov model and application in mid- to long-term runoff forecast Hydrological Sciences Journal. 1-13. DOI: 10.1080/02626667.2014.986486  0.32
2016 Zhang M, English D, Hu C, Carlson P, Muller-Karger FE, Toro-Farmer G, Herwitz SR. Short-term changes of remote sensing reflectancein a shallow-water environment: observations from repeated airborne hyperspectral measurements International Journal of Remote Sensing. 37: 1620-1638. DOI: 10.1080/01431161.2016.1159746  0.36
2016 Fan C, Wei T, Hu C, Zhou X. Preparation of GO/PUF hybrid shell microcapsules using GO sheets as the particulate emulsifier Micro and Nano Letters. 11: 207-211. DOI: 10.1049/mnl.2015.0445  0.56
2016 Hu C, Zhou R, Fan C, Zhou X. Influence of reducing reagent combination in graphene oxide reduction Micro and Nano Letters. 11: 215-220. DOI: 10.1049/mnl.2014.0623  0.56
2016 Wang R, Zeng T, Hu C, Yang J, Long T. Accurate range profile alignment method based on minimum entropy for inverse synthetic aperture radar image formation Iet Radar, Sonar and Navigation. 10: 663-671. DOI: 10.1049/iet-rsn.2015.0185  0.32
2016 Zhang J, Wang Q, Zhang X, Wang J, Guo M, Wiley BJ, Li C, Hu C. Carbamide promoted polyol synthesis and transmittance properties of silver nanocubes Inorganic Chemistry Frontiers. 3: 547-555. DOI: 10.1039/C5Qi00256G  0.56
2016 Huang Q, Li W, Lin Q, Pi D, Hu C, Shao C, Zhang H. A review of significant factors in the synthesis of hetero-structured dumbbell-like nanoparticles Chinese Journal of Catalysis. 37: 681-691. DOI: 10.1016/S1872-2067(15)61069-5  0.32
2016 Hu C, Tian Y, Wang J, Zhang S, Cheng D, Chen Y, Zhang K, Zheng W. Structural evolution and optical properties of hydrogenated germanium carbonitride films Vacuum. 129: 23-30. DOI: 10.1016/j.vacuum.2016.04.007  0.52
2016 Xia Y, Yang D, Hu C, Wu C, Han J. Numerical simulation of ventilation and dust suppression system for open-type TBM tunneling work area Tunnelling and Underground Space Technology. 56: 70-78. DOI: 10.1016/j.tust.2016.03.003  0.56
2016 Hu C, Li Y, Kong Y, Ding Y. Preparation of poly(o-toluidine)/nano ZnO/epoxy composite coating and evaluation of its corrosion resistance properties Synthetic Metals. 214: 62-70. DOI: 10.1016/j.synthmet.2016.01.021  0.48
2016 Agarwal H, Kushwaha P, Gupta C, Khandelwal S, Hu C, Chauhan YS. Analysis and modeling of flicker noise in lateral asymmetric channel MOSFETs Solid-State Electronics. 115: 33-38. DOI: 10.1016/J.Sse.2015.10.002  0.36
2016 Dang X, Hu C, Chen H, Huang J, Zheng D, Hu S. Photoelectrochemistry and sensor of NO based on a supramolecular system composed of polyhydroquinone and fullerene Sensors and Actuators, B: Chemical. 228: 709-715. DOI: 10.1016/j.snb.2016.01.103  0.4
2016 He CC, Hu CY, Lo SL. Evaluation of sono-electrocoagulation for the removal of Reactive Blue 19 passive film removed by ultrasound Separation and Purification Technology. 165: 107-113. DOI: 10.1016/j.seppur.2016.03.047  0.36
2016 Liu CF, Huang CP, Hu CC, Juang Y, Huang C. Photoelectrochemical degradation of dye wastewater on TiO2-coated titanium electrode prepared by electrophoretic deposition Separation and Purification Technology. 165: 145-153. DOI: 10.1016/J.Seppur.2016.03.045  0.36
2016 Rong H, Zhang H, Xiao S, Li C, Hu C. Optimizing energy consumption for data centers Renewable and Sustainable Energy Reviews. 58: 674-691. DOI: 10.1016/J.Rser.2015.12.283  0.36
2016 Lu Y, Zhan W, Hu C. Detecting and quantifying oil slick thickness by thermal remote sensing: A ground-based experiment Remote Sensing of Environment. 181: 207-217. DOI: 10.1016/J.Rse.2016.04.007  0.36
2016 Xing Q, Hu C. Mapping macroalgal blooms in the Yellow Sea and East China Sea using HJ-1 and Landsat data: Application of a virtual baseline reflectance height technique Remote Sensing of Environment. 178: 113-126. DOI: 10.1016/J.Rse.2016.02.065  0.32
2016 Feng L, Han X, Hu C, Chen X. Four decades of wetland changes of the largest freshwater lake in China: Possible linkage to the Three Gorges Dam? Remote Sensing of Environment. 176: 43-55. DOI: 10.1016/J.Rse.2016.01.011  0.36
2016 Liu M, Jiang H, Hu C. Finite-time synchronization of memristor-based Cohen-Grossberg neural networks with time-varying delays Neurocomputing. 194: 1-9. DOI: 10.1016/j.neucom.2016.02.012  0.32
2016 Lv G, Hu C, Chen S. Research on recommender system based on ontology and genetic algorithm Neurocomputing. 187: 92-97. DOI: 10.1016/j.neucom.2015.09.113  0.6
2016 Peng H, Hu C, Hu J, Tian X, Wu T. Fe3O4@mZnO nanoparticles as magnetic and microwave responsive drug carriers Microporous and Mesoporous Materials. 226: 140-145. DOI: 10.1016/j.micromeso.2015.11.052  0.52
2016 Kushwaha P, Bala Krishna K, Agarwal H, Khandelwal S, Duarte JP, Hu C, Chauhan YS. Thermal resistance modeling in FDSOI transistors with industry standard model BSIM-IMG Microelectronics Journal. 56: 171-176. DOI: 10.1016/J.Mejo.2016.07.014  0.36
2016 Li Z, Jiang Y, Hu C, Peng Z. Recent progress on decoupling diagnosis of hybrid failures in gear transmission systems using vibration sensor signal: A review Measurement: Journal of the International Measurement Confederation. 90: 4-19. DOI: 10.1016/J.Measurement.2016.04.036  0.32
2016 Chen J, Mei W, Liu C, Hu C, Huang Q, Chen N, Zhang R, Hou W. Carbon-modified bismuth titanate with an enhanced photocatalytic activity under nature sunlight Materials Letters. 172: 184-187. DOI: 10.1016/j.matlet.2016.03.002  0.32
2016 Hu C, Wang S, Wang YH, Chen C, Jiang DY. Understanding attraction in formal mentoring relationships from an affective perspective Journal of Vocational Behavior. 94: 104-113. DOI: 10.1016/j.jvb.2016.02.007  0.4
2016 Hu C, Chen S, Wang Y, Peng X, Zhang W, Chen J. Excellent electrochemical performances of cabbage-like polyaniline fabricated by template synthesis Journal of Power Sources. 321: 94-101. DOI: 10.1016/j.jpowsour.2016.04.113  0.68
2016 Li PC, Chien YJ, Hu CC. Novel configuration of bifunctional air electrodes for rechargeable zinc-air batteries Journal of Power Sources. 313: 37-45. DOI: 10.1016/j.jpowsour.2016.02.063  0.36
2016 Tan Y, Lin F, Hu C. How continuing exporters set the price? Theory and empirical evidence from China International Review of Economics and Finance. 44: 91-102. DOI: 10.1016/j.iref.2016.03.009  0.64
2016 Yao L, Shi J, Xu H, Shen W, Hu C. Low-temperature CO2 reforming of methane on Zr-promoted Ni/SiO2 catalyst Fuel Processing Technology. 144: 1-7. DOI: 10.1016/j.fuproc.2015.12.009  0.48
2016 Chien HC, Wu TH, Rajkumar M, Hu CC. Effects of buffer agents on hydrogen adsorption and desorption at/within activated carbon for the negative electrode of aqueous asymmetric supercapacitors Electrochimica Acta. 205: 1-7. DOI: 10.1016/j.electacta.2016.04.092  0.36
2016 Xu W, Dai S, Liu G, Xi Y, Hu C, Wang X. CuO Nanoflowers growing on Carbon Fiber Fabric for Flexible High-Performance Supercapacitors Electrochimica Acta. 203: 1-8. DOI: 10.1016/j.electacta.2016.03.170  0.76
2016 Le C, Lehrter JC, Schaeffer BA, Hu C, Murrell MC, Hagy JD, Greene RM, Beck M. Bio-optical water quality dynamics observed from MERIS in Pensacola Bay, Florida Estuarine, Coastal and Shelf Science. 173: 26-38. DOI: 10.1016/J.Ecss.2016.02.003  0.36
2016 Xu H, Wang H, Hu C, Fu M, He Y, Liu J, Liu X. The influence of different donor/acceptor matches on chromophore's nonlinear optical activity Dyes and Pigments. 131: 215-223. DOI: 10.1016/j.dyepig.2016.04.023  0.68
2016 Hu C, Gao Y, Zhang Y, Li Z. Statistical nanoindentation technique in application to hardened cement pastes: Influences of material microstructure and analysis method Construction and Building Materials. 113: 306-316. DOI: 10.1016/J.Conbuildmat.2016.03.064  0.52
2016 Li X, Jiang F, Hu C. Analysis of the accuracy and pressure oscillation of the lattice Boltzmann method for fluid-solid interactions Computers and Fluids. 129: 33-52. DOI: 10.1016/j.compfluid.2016.01.015  0.32
2016 Jien SH, Baillie I, Hu CC, Chen TH, Iizuka Y, Chiu CY. Forms and distribution of phosphorus in a placic podzolic toposequence in a subtropical subalpine forest, Taiwan Catena. 140: 145-154. DOI: 10.1016/j.catena.2016.01.024  0.36
2016 Li Y, Zou B, Hu C, Cao M. Nitrogen-doped porous carbon nanofiber webs for efficient CO2 capture and conversion Carbon. 99: 79-89. DOI: 10.1016/j.carbon.2015.11.074  0.48
2016 Zhang W, Ju W, Wu X, Wang Y, Wang Q, Zhou H, Wang S, Hu C. Structure, stability and electrochromic properties of polyaniline film covalently bonded to indium tin oxide substrate Applied Surface Science. 367: 542-551. DOI: 10.1016/j.apsusc.2016.01.041  0.52
2016 Sun H, Hu C, Zhang T, Deng Z. Experimental investigation on mass flow rate measurements and feeding characteristics of powder at high pressure Applied Thermal Engineering. 102: 30-37. DOI: 10.1016/j.applthermaleng.2016.03.142  0.36
2016 Xin H, Guo K, Li D, Yang H, Hu C. Production of high-grade diesel from palmitic acid over activated carbon-supported nickel phosphide catalysts Applied Catalysis B: Environmental. 187: 375-385. DOI: 10.1016/j.apcatb.2016.01.051  0.48
2016 Han L, Xu Y, Lei C, Yang L, Deng X, Hu C, Xu G. Degrading river network due to urbanization in Yangtze River Delta Journal of Geographical Sciences. 26: 694-706. DOI: 10.1007/s11442-016-1293-0  0.4
2016 Qiao D, Dong Y, Zhang L, Zhou Q, Hu C, Ren Y, Li Y. Ectopic expression of the maize ZmADF3 gene in Arabidopsis revealing its functions in kernel development Plant Cell, Tissue and Organ Culture. 1-15. DOI: 10.1007/s11240-016-0994-5  0.48
2016 Hu C, Li H, Zhang S, Li W. A molecular-level analysis of gas-phase reactions in chemical vapor deposition of carbon from methane using a detailed kinetic model Journal of Materials Science. 51: 3897-3906. DOI: 10.1007/S10853-015-9709-2  0.4
2016 Chao MR, Hu CW, Chen JL. Fluorometric determination of copper(II) using CdTe quantum dots coated with 1-(2-thiazolylazo)-2-naphthol and an ionic liquid Microchimica Acta. 1-10. DOI: 10.1007/s00604-015-1693-3  0.4
2016 Hu C, Zheng D, Fan S, Wiegerink RJ, Zhanshe G. Theoretical and experimental research on the in-plane comb-shaped capacitor for MEMS coriolis mass flow sensor Microsystem Technologies. 22: 747-755. DOI: 10.1007/s00542-015-2441-7  0.4
2016 Hsu HY, Hu CC. Surface quality improvement of EDMed Ti–6Al–4V alloy using plasma etching and TiN coating International Journal of Advanced Manufacturing Technology. 1-8. DOI: 10.1007/s00170-016-8760-8  0.64
2016 Hu CL, Xiong J, Li JY, Gao LX, Wang WX, Cheng KJ, Yang GX, Li J, Hu JF. Rare Sesquiterpenoids from the Shed Trunk Barks of the Critically Endangered Plant Abies beshanzuensis and Their Bioactivities European Journal of Organic Chemistry. DOI: 10.1002/Ejoc.201600165  0.52
2016 Dai J, Fu X, Zhu L, Tang J, Guo X, Hu C. One-Pot Deoxygenation of Fructose to Furfuryl Alcohol by Sequential Dehydration and Decarbonylation Chemcatchem. 8: 1379-1385. DOI: 10.1002/cctc.201501292  0.48
2016 Bai Y, Chen H, Xiao S, Xue Q, Zhang T, Zhu Z, Li Q, Hu C, Yang Y, Hu Z, Huang F, Wong KS, Yip HL, Yang S. Effects of a Molecular Monolayer Modification of NiO Nanocrystal Layer Surfaces on Perovskite Crystallization and Interface Contact toward Faster Hole Extraction and Higher Photovoltaic Performance Advanced Functional Materials. 26: 2950-2958. DOI: 10.1002/Adfm.201505215  0.68
2015 Liu Y, Zhang Y, Wu J, Zhu D, Sun S, Zhao L, Wang X, Liu H, Ren Z, Wang C, Xiu Q, Xiao Z, Cao Z, Cui S, Yang H, ... ... Hu C, et al. A randomized, double-blind, multicenter Phase II study comparing the efficacy and safety of oral nemonoxacin with oral levofloxacin in the treatment of community-acquired pneumonia. Journal of Microbiology, Immunology, and Infection = Wei Mian Yu Gan Ran Za Zhi. PMID 26748734 DOI: 10.1016/J.Jmii.2015.09.005  0.36
2015 Li L, Yang T, Guo W, Ju X, Hu C, Tang B, Fu J, Gu J, Zhang H. Construction of an efficient mutant strain of Trichosporonoides oedocephalis with HOG1 gene deletion for production of erythritol. Journal of Microbiology and Biotechnology. PMID 26718472 DOI: 10.4014/jmb.1510.10049  0.48
2015 Liao L, Su X, Yang X, Hu C, Li B, Lv Y, Shuai Y, Jing H, Deng Z, Jin Y. TNF-α Inhibits FoxO1 by Up-regulating MiR-705 to Aggravate Oxidative Damage in Bone Marrow-Derived Mesenchymal Stem Cells during Osteoporosis. Stem Cells (Dayton, Ohio). PMID 26700816 DOI: 10.1002/stem.2274  0.44
2015 Yasinta M, Che RC, Hu CY, Du XH, Ding GX, Huang SM, Chen Y, Zhang AH. Use of off-label nephrology-related drugs in hospitalized pediatric patients: a retrospective study. World Journal of Pediatrics : Wjp. PMID 26684307 DOI: 10.1007/s12519-015-0058-7  0.4
2015 Wang F, Xue R, Li X, Hu C, Xia Q. Characterization of a protein tyrosine phosphatase as a host factor promoting baculovirus replication in silkworm, Bombyx mori. Developmental and Comparative Immunology. PMID 26684065 DOI: 10.1016/j.dci.2015.12.002  0.52
2015 Hu C, Gao Y, Du W. Design, Synthesis and Biological Evaluation of Pyrazole Derivatives. Chemical Biology & Drug Design. PMID 26648479 DOI: 10.1111/cbdd.12699  0.48
2015 Hu CH, Fufa D, Hsu CC, Lin YT, Lin CH. Revisiting spontaneous rupture of the extensor pollicis longus tendon: eight cases without identifiable predisposing factor. Hand (New York, N.Y.). 10: 726-31. PMID 26568731 DOI: 10.1007/s11552-015-9746-y  0.52
2015 Guo CT, Lu QB, Ding SJ, Hu CY, Hu JG, Wo Y, Fan YD, Wang XJ, Qin SL, Cui N, Yang ZD, Zhang XA, Liu W, Cao WC. Epidemiological and clinical characteristics of severe fever with thrombocytopenia syndrome (SFTS) in China: an integrated data analysis. Epidemiology and Infection. 1-10. PMID 26542444 DOI: 10.1017/S0950268815002678  0.48
2015 Chen SW, Hui CK, Chang JJ, Lee TS, Chan SC, Chien CH, Hu CC, Lin CL, Chen LW, Liu CJ, Yen CL, Hsieh PJ, Liu CK, Su CS, Yu CY, et al. Carbon dioxide insufflation during colonoscopy can significantly decrease post-interventional abdominal discomfort in deeply sedated patients: A prospective, randomized, double blind, controlled trial. Journal of Gastroenterology and Hepatology. PMID 26421801 DOI: 10.1111/jgh.13181  0.8
2015 Ye XN, Zhou XP, Wei JY, Xu GX, Li Y, Mao LP, Huang J, Ren YL, Mei C, Wang JH, Lou YJ, Ma LY, Yu WJ, Ye L, Xie LL, ... ... Hu C, et al. Epigenetic priming with decitabine followed by low- dose idarubicin /cytarabine has an increased anti-leukemic effect compared to traditional chemotherapy in high-risk myeloid neoplasms. Leukemia & Lymphoma. 1-24. PMID 26372888 DOI: 10.3109/10428194.2015.1091931  0.4
2015 Chen S, Deng C, Hu C, Li J, Wen X, Wu Z, Li Y, Zhang F, Li Y. Association of MCP-1-2518A/G polymorphism with susceptibility to autoimmune diseases: a meta-analysis. Clinical Rheumatology. PMID 26318885 DOI: 10.1007/s10067-015-3060-5  0.52
2015 Hu CY, Lin CH. Reverse ray tracing for transformation optics. Optics Express. 23: 17622-37. PMID 26191770  0.88
2015 Hu CC, Lin CL, Chang LC, Chien CH, Chen LW, Liu CJ, Chien RN. Interleukin-28B gene non-TT allele strongly predicts treatment failure for genotype 1 infected chronic hepatitis C patients with advanced fibrosis: a case control study. Bmc Infectious Diseases. 15: 156. PMID 25888020 DOI: 10.1186/s12879-015-0888-x  0.48
2015 Barsanti PA, Pan Y, Lu Y, Jain R, Cox M, Aversa RJ, Dillon MP, Elling R, Hu C, Jin X, Knapp M, Lan J, Ramurthy S, Rudewicz P, Setti L, et al. Structure-Based Drug Design of Novel, Potent, and Selective Azabenzimidazoles (ABI) as ATR Inhibitors. Acs Medicinal Chemistry Letters. 6: 42-6. PMID 25589928 DOI: 10.1021/ml500352s  0.36
2015 Lin YT, Su ST, Lo S, Hu CH, Lin CH, Wei FC. Risk factors for reexploration in toe-to-hand transfer: a multivariate analysis of 363 cases. Plastic and Reconstructive Surgery. 135: 501-6. PMID 25357159 DOI: 10.1097/PRS.0000000000000884  0.6
2015 Hu C, Xu L, Liang S, Zhang Z, Zhang Y, Zhang F. Lentivirus-mediated shRNA targeting Nanog inhibits cell proliferation and attenuates cancer stem cell activities in breast cancer Journal of Drug Targeting. DOI: 10.3109/1061186X.2015.1082567  0.72
2015 Zeng Y, Kuo CI, Hsu C, Najmzadeh M, Sachid A, Kapadia R, Yeung C, Chang E, Hu C, Javey A. Quantum Well InAs/AlSb/GaSb Vertical Tunnel FET with HSQ Mechanical Support Ieee Transactions On Nanotechnology. 14: 580-584. DOI: 10.1109/Tnano.2015.2419232  1
2015 Yadav C, Duarte JP, Khandelwal S, Agarwal A, Hu C, Chauhan YS. Capacitance Modeling in III-V FinFETs Ieee Transactions On Electron Devices. DOI: 10.1109/Ted.2015.2480380  0.36
2015 Khandelwal S, Agarwal H, Duarte JP, Chan K, Dey S, Chauhan YS, Hu C. Modeling STI Edge Parasitic Current for Accurate Circuit Simulations Ieee Transactions On Computer-Aided Design of Integrated Circuits and Systems. 34: 1291-1294. DOI: 10.1109/Tcad.2015.2419626  0.36
2015 Khandelwal S, Duarte JP, Medury A, Chauhan YS, Salahuddin S, Hu C. Modeling SiGe FinFETs with Thin Fin and Current-Dependent Source/Drain Resistance Ieee Electron Device Letters. 36: 636-638. DOI: 10.1109/Led.2015.2437794  0.4
2015 Hu C, Tian Y, Zeng T, Long T, Dong X. Adaptive Secondary Range Compression Algorithm in Geosynchronous SAR Ieee Journal of Selected Topics in Applied Earth Observations and Remote Sensing. DOI: 10.1109/JSTARS.2015.2477317  0.36
2015 Agarwal H, Khandelwal S, Dey S, Hu C, Chauhan YS. Analytical modeling of flicker noise in halo implanted MOSFETs Ieee Journal of the Electron Devices Society. 3: 355-360. DOI: 10.1109/Jeds.2015.2424686  0.36
2015 Agarwal H, Gupta C, Kushwaha P, Yadav C, Duarte JP, Khandelwal S, Hu C, Chauhan YS. Analytical modeling and experimental validation of threshold voltage in BSIM6 MOSFET model Ieee Journal of the Electron Devices Society. 3: 240-243. DOI: 10.1109/Jeds.2015.2415584  0.36
2015 Huang R, Hu C, Yang B, Zhao J. Zirconium-immobilized bentonite for the removal of methyl orange (MO) from aqueous solutions Desalination and Water Treatment. DOI: 10.1080/19443994.2015.1040849  0.44
2015 Twu MJ, Hu CC, Liu DW, Hsu CY, Kuo CG. Effects of TiN, CrN and TiAlN coatings using reactive sputtering on the fatigue behaviour of AA2024 and medium carbon steel specimens Journal of Experimental Nanoscience. DOI: 10.1080/17458080.2015.1100332  0.32
2015 Serrao CR, Diamond AM, Hsu SL, You L, Gadgil S, Clarkson J, Carraro C, Maboudian R, Hu C, Salahuddin S. Highly crystalline MoS2 thin films grown by pulsed laser deposition Applied Physics Letters. 106. DOI: 10.1063/1.4907169  0.4
2015 Kushwaha P, Paydavosi N, Khandelwal S, Yadav C, Agarwal H, Duarte JP, Hu C, Chauhan YS. Modeling the impact of substrate depletion in FDSOI MOSFETs Solid-State Electronics. 104: 6-11. DOI: 10.1016/J.Sse.2014.11.002  0.36
2015 Guo H, Wen Z, Zi Y, Yeh MH, Wang J, Zhu L, Hu C, Wang ZL. A Water-Proof Triboelectric-Electromagnetic Hybrid Generator for Energy Harvesting in Harsh Environments Advanced Energy Materials. DOI: 10.1002/Aenm.201501593  0.44
2014 Hu C, Zhang S, Jin X, Tong L. [Meilian Xiaoke capsule combined with metformin for protecting islet cells and lowering blood glucose in diabetic rats]. Nan Fang Yi Ke Da Xue Xue Bao = Journal of Southern Medical University. 34: 1365-9. PMID 25263377  0.4
2014 Yin W, Zhou R, Wu H, Zuo Y, Wang B, Hu C, Jin X, Wang X, Kang Y. [Value of focused critical ultrasound in the treatment of critical patients in Lushan earthquake]. Zhonghua Yi Xue Za Zhi. 94: 1135-8. PMID 24924709  0.56
2014 Mahajan A, Go MJ, Zhang W, Below JE, Gaulton KJ, Ferreira T, Horikoshi M, Johnson AD, Ng MC, Prokopenko I, ... ... Hu C, et al. Genome-wide trans-ancestry meta-analysis provides insight into the genetic architecture of type 2 diabetes susceptibility. Nature Genetics. 46: 234-44. PMID 24509480 DOI: 10.1038/Ng.2897  0.48
2014 Lee YJ, Cho TC, Chuang SS, Hsueh FK, Lu YL, Sung PJ, Chen HC, Current MI, Tseng TY, Chao TS, Hu C, Yang FL. Low-temperature microwave annealing processes for future IC fabrication-A review Ieee Transactions On Electron Devices. 61: 651-665. DOI: 10.1109/Ted.2014.2300898  1
2014 Chauhan YS, Venugopalan S, Chalkiadaki MA, Karim MAU, Agarwal H, Khandelwal S, Paydavosi N, Duarte JP, Enz CC, Niknejad AM, Hu C. BSIM6: Analog and RF compact model for bulk MOSFET Ieee Transactions On Electron Devices. 61: 234-244. DOI: 10.1109/Ted.2013.2283084  1
2014 Khandelwal S, Duarte JP, Chauhan YS, Hu C. Modeling 20-nm Germanium FinFET with the industry standard FinFET model Ieee Electron Device Letters. 35: 711-713. DOI: 10.1109/Led.2014.2323956  1
2014 Yadav C, Kushwaha P, Khandelwal S, Duarte JP, Chauhan YS, Hu C. Modeling of GaN-based normally-off FinFET Ieee Electron Device Letters. 35: 612-614. DOI: 10.1109/Led.2014.2314700  1
2013 Hsu PY, Lee KK, Lee PS, Hu CC, Lin CH, Liu PC. Biochemical characterization of a phospholipase A2 from Photobacterium damselae subsp. piscicida. Zeitschrift FüR Naturforschung. C, Journal of Biosciences. 68: 471-81. PMID 24601085  0.6
2013 Hu CH, Lin CH, Chang NJ, Hu CW, Lin CH. Urinary excretion of oxidative damage markers in a rat model of vascularized composite allotransplantation. Plastic and Reconstructive Surgery. 132: 530e-541e. PMID 24076700 DOI: 10.1097/PRS.0b013e3182a0141f  0.68
2013 Zima V, Raja DS, Lee YS, Chang TG, Wu CY, Hu CC, Lee KR, Lai JY, Yeh JM, Lin CH. Alkaline-earth metal phosphonocarboxylates: synthesis, structures, chirality, and luminescence properties. Dalton Transactions (Cambridge, England : 2003). 42: 15332-42. PMID 24002544 DOI: 10.1039/c3dt51375k  0.52
2013 I-Fang Cheng, Chang HC, Chen TY, Hu C, Yang FL. Rapid (<5 min) identification of pathogen in human blood by electrokinetic concentration and surface-enhanced Raman spectroscopy. Scientific Reports. 3: 2365. PMID 23917638 DOI: 10.1038/Srep02365  0.56
2013 Liu PH, Chuang FJ, Tu CY, Hu CH, Lin TW, Wang YT, Lin CH, Datta A, Huang JH. Aluminum complexes incorporating symmetrical and asymmetrical tridentate pincer type pyrrolyl ligands: synthesis, characterization and reactivity study. Dalton Transactions (Cambridge, England : 2003). 42: 13754-64. PMID 23907274 DOI: 10.1039/c3dt51133b  0.6
2013 Cong M, Hu CM, Cao YF, Fang ZZ, Tang SH, Wang JR, Luo JS. Cryptotanshinone and dihydrotanshinone I exhibit strong inhibition towards human liver microsome (HLM)-catalyzed propofol glucuronidation. Fitoterapia. 85: 109-13. PMID 23333907 DOI: 10.1016/j.fitote.2013.01.002  0.4
2013 Cheng JY, Yeung CW, Hu C. Extraction of front and buried oxide interface trap densities in fully depleted silicon-on-insulator metal-oxide-semiconductor field-effect transistor Ecs Solid State Letters. 2. DOI: 10.1149/2.001305Ssl  1
2013 Lin C, Chang H, Wong I, Luo S, Liu CW, Hu C. Interfacial layer reduction and high permittivity tetragonal ZrO2 on germanium reaching ultrathin 0.39 nm equivalent oxide thickness Applied Physics Letters. 102: 232906. DOI: 10.1063/1.4810934  0.8
2012 Chang LC, Wu HN, Lin CY, Lai YH, Hu CW, Ho KC. One-pot synthesis of poly (3,4-ethylenedioxythiophene)-Pt nanoparticle composite and its application to electrochemical H2O2 sensor. Nanoscale Research Letters. 7: 319. PMID 22716478 DOI: 10.1186/1556-276X-7-319  0.64
2012 Hu CK, Ozlü N, Coughlin M, Steen JJ, Mitchison TJ. Plk1 negatively regulates PRC1 to prevent premature midzone formation before cytokinesis. Molecular Biology of the Cell. 23: 2702-11. PMID 22621898 DOI: 10.1091/Mbc.E12-01-0058  0.6
2012 Hu CK, Coughlin M, Mitchison TJ. Midbody assembly and its regulation during cytokinesis. Molecular Biology of the Cell. 23: 1024-34. PMID 22278743 DOI: 10.1091/Mbc.E11-08-0721  0.6
2012 Cho YS, Chen CH, Hu C, Long J, Ong RT, Sim X, Takeuchi F, Wu Y, Go MJ, Yamauchi T, Chang YC, Kwak SH, Ma RC, Yamamoto K, Adair LS, et al. Meta-analysis of genome-wide association studies identifies eight new loci for type 2 diabetes in east Asians. Nature Genetics. 44: 67-72. PMID 22158537 DOI: 10.1038/Ng.1019  0.48
2012 Sachid AB, Hu C. Denser and More Stable SRAM Using FinFETs With Multiple Fin Heights Ieee Transactions On Electron Devices. 59: 2037-2041. DOI: 10.1109/Ted.2012.2199759  0.36
2012 Karim MA, Chauhan YS, Venugopalan S, Sachid AB, Lu DD, Nguyen BY, Faynot O, Niknejad AM, Hu C. Extraction of isothermal condition and thermal network in UTBB SOI MOSFETs Ieee Electron Device Letters. 33: 1306-1308. DOI: 10.1109/Led.2012.2205659  1
2012 Chen M, Lin C, Chen B, Lin C, Huang G, Ho C, Wang T, Hu C, Yang F. Random Telegraph Noise in 1X-nm CMOS Silicide Contacts and a Method to Extract Trap Density Ieee Electron Device Letters. 33: 591-593. DOI: 10.1109/Led.2011.2182029  0.8
2012 Lien YC, Shieh JM, Huang WH, Tu CH, Wang C, Shen CH, Dai BT, Pan CL, Hu C, Yang FL. Fast programming metal-gate Si quantum dot nonvolatile memory using green nanosecond laser spike annealing Applied Physics Letters. 100. DOI: 10.1063/1.3700729  1
2012 Venugopalan S, Lu DD, Kawakami Y, Lee PM, Niknejad AM, Hu C. BSIM-CG: A compact model of cylindrical/surround gate MOSFET for circuit simulations Solid-State Electronics. 67: 79-89. DOI: 10.1016/J.Sse.2011.09.001  1
2011 Huang WY, Chuang SJ, Chunag NT, Hsiao CS, Datta A, Chen SJ, Hu CH, Huang JH, Lee TY, Lin CH. Aluminium complexes containing bidentate and symmetrical tridentate pincer type pyrrolyl ligands: synthesis, reactions and ring opening polymerization. Dalton Transactions (Cambridge, England : 2003). 40: 7423-33. PMID 21695289 DOI: 10.1039/c1dt10442j  0.6
2011 Hu CK, Coughlin M, Field CM, Mitchison TJ. KIF4 regulates midzone length during cytokinesis. Current Biology : Cb. 21: 815-24. PMID 21565503 DOI: 10.1016/J.Cub.2011.04.019  0.6
2011 Hu CB, Chen CP, Yeh TK, Song JS, Chang CY, Chuu JJ, Tung FF, Ho PY, Chen TW, Lin CH, Wang MH, Chang KY, Huang CL, Lin HL, Li WT, et al. BPR0C261 is a novel orally active antitumor agent with antimitotic and anti-angiogenic activities. Cancer Science. 102: 182-91. PMID 21040217 DOI: 10.1111/j.1349-7006.2010.01744.x  0.52
2011 Chen H, Chen C, Hsueh F, Liu J, Shy S, Wu C, Chien C, Hu C, Huang C, Yang F. A Novel Nanoinjection Lithography (NInL) Technology and Its Application for 16-nm Node Device Fabrication Ieee Transactions On Electron Devices. 58: 3678-3686. DOI: 10.1109/Ted.2011.2163938  0.76
2011 Lu DD, Dunga MV, Lin CH, Niknejad AM, Hu C. A computationally efficient compact model for fully-depleted SOI MOSFETs with independently-controlled front- and back-gates Solid-State Electronics. 62: 31-39. DOI: 10.1016/J.Sse.2010.12.015  1
2010 Lin CH, Hu CK, Shih HM. Clathrin heavy chain mediates TACC3 targeting to mitotic spindles to ensure spindle stability. The Journal of Cell Biology. 189: 1097-105. PMID 20566684 DOI: 10.1083/Jcb.200911120  0.6
2010 Chien CH, Chien RN, Yen CL, Fang KM, Liu CJ, Lin CL, Chang JJ, Chen LW, Lee TS, Chen SW, Hu CC, Chang LC. The role of endoscopic ultrasonography examination for evaluation and surveillance of gastric subepithelial masses. Chang Gung Medical Journal. 33: 73-81. PMID 20184798  0.8
2010 Li WT, Hwang DR, Song JS, Chen CP, Chuu JJ, Hu CB, Lin HL, Huang CL, Huang CY, Tseng HY, Lin CC, Chen TW, Lin CH, Wang HS, Shen CC, et al. Synthesis and biological activities of 2-amino-1-arylidenamino imidazoles as orally active anticancer agents. Journal of Medicinal Chemistry. 53: 2409-17. PMID 20170097 DOI: 10.1021/jm901501s  0.52
2010 Lien YL, Chang YC, Chuang NT, Datta A, Chen SJ, Hu CH, Huang WY, Lin CH, Huang JH. A new type of asymmetric tridentate pyrrolyl-linked pincer ligand and its aluminum dihydride complexes. Inorganic Chemistry. 49: 136-43. PMID 19950963 DOI: 10.1021/ic9016189  0.6
2010 Lu DD, Lin CH, Niknejad AM, Hu C. Compact modeling of variation in FinFET SRAM cells Ieee Design and Test of Computers. 27: 44-50. DOI: 10.1109/Mdt.2010.39  1
2010 Kim SH, Agarwal S, Jacobson ZA, Matheu P, Hu C, Liu TJK. Tunnel field effect transistor with raised germanium source Ieee Electron Device Letters. 31: 1107-1109. DOI: 10.1109/Led.2010.2061214  1
2010 He J, Xing Z, Wang Y, Xi X, Chan M, Hu C. Retraction notice: Retraction notice to “Normalized mutual integral difference operator: A novel experimental method for extracting threshold voltage of MOSFETs” [Microelectron. J. 33 (2002) 667-670] Microelectronics Journal. 41: 693. DOI: 10.1016/J.Mejo.2010.09.001  0.6
2009 Hu JZ, Hu CY, Duan WD, Gao H, Zhang X, Tang ZR, Lu YW, Zhang FX, Jin D, Yang KJ, Lin XB, Yang H, Shu MY, Zhang YH, Liu TB, et al. [Survey on mental disorders among registered residents and non-registered residents in Shenzhen]. Zhonghua Liu Xing Bing Xue Za Zhi = Zhonghua Liuxingbingxue Zazhi. 30: 543-8. PMID 19957615  0.88
2009 Chen IC, Ho SM, Chen YC, Lin CY, Hu CH, Tu CY, Datta A, Huang JH, Lin CH. Deprotonation and reductive addition reactions of hypervalent aluminium dihydride compounds containing substituted pyrrolyl ligands with phenols, ketones, and aldehydes. Dalton Transactions (Cambridge, England : 2003). 8631-43. PMID 19809740 DOI: 10.1039/b908164j  0.6
2009 Lin CH, Dunga MV, Lu DD, Niknejad AM, Hu C. Performance-aware corner model for design for manufacturing Ieee Transactions On Electron Devices. 56: 595-600. DOI: 10.1109/Ted.2008.2011845  1
2008 Chao MR, Wang CJ, Wu MT, Pan CH, Kuo CY, Yang HJ, Chang LW, Hu CW. Repeated measurements of urinary methylated/oxidative DNA lesions, acute toxicity, and mutagenicity in coke oven workers. Cancer Epidemiology, Biomarkers & Prevention : a Publication of the American Association For Cancer Research, Cosponsored by the American Society of Preventive Oncology. 17: 3381-9. PMID 19064554 DOI: 10.1158/1055-9965.Epi-08-0721  0.56
2008 Cheng YW, Chang CY, Lin KL, Hu CM, Lin CH, Kang JJ. Shikonin derivatives inhibited LPS-induced NOS in RAW 264.7 cells via downregulation of MAPK/NF-kappaB signaling. Journal of Ethnopharmacology. 120: 264-71. PMID 18835347 DOI: 10.1016/j.jep.2008.09.002  0.6
2008 Hu CK, Coughlin M, Field CM, Mitchison TJ. Cell polarization during monopolar cytokinesis. The Journal of Cell Biology. 181: 195-202. PMID 18411311 DOI: 10.1083/Jcb.200711105  0.6
2008 Tseng YP, Kuo YH, Hu CP, Jeng KS, Janmanchi D, Lin CH, Chou CK, Yeh SF. The role of helioxanthin in inhibiting human hepatitis B viral replication and gene expression by interfering with the host transcriptional machinery of viral promoters. Antiviral Research. 77: 206-14. PMID 18249449 DOI: 10.1016/j.antiviral.2007.12.011  0.6
2008 Kamohara S, Hu C, Okumura T. Deep-Trap Stress Induced Leakage Current Model for Nominal and Weak Oxides Japanese Journal of Applied Physics. 47: 6208-6213. DOI: 10.1143/Jjap.47.6208  0.4
2008 Hu C. BSIM - Making the first international standard MOSFET model Science in China, Series F: Information Sciences. 51: 765-773. DOI: 10.1007/S11432-008-0053-X  1
2007 Lin CH, Tsai YC, Hu CK. Wrapping conformations of a polymer on a curved surface. Physical Review. E, Statistical, Nonlinear, and Soft Matter Physics. 75: 031903. PMID 17500722  0.6
2007 Chen SW, Lee TS, Hu CC, Chang LC, Chien RN. Simultaneously acute hepatitis B virus and C virus coinfection and subsequent chronic hepatitis C. Scandinavian Journal of Infectious Diseases. 39: 351-4. PMID 17454901 DOI: 10.1080/00365540600951358  0.8
2007 Wang SC, Lin CH, Ou TT, Wu CC, Tsai WC, Hu CJ, Liu HW, Yen JH. Ligands for programmed cell death 1 gene in patients with systemic lupus erythematosus. The Journal of Rheumatology. 34: 721-5. PMID 17343323  0.64
2007 Chao MR, Wang CJ, Yen CC, Yang HH, Lu YC, Chang LW, Hu CW. Simultaneous determination of N7-alkylguanines in DNA by isotope-dilution LC-tandem MS coupled with automated solid-phase extraction and its application to a small fish model. The Biochemical Journal. 402: 483-90. PMID 17134374 DOI: 10.1042/Bj20061447  0.56
2007 Lin CY, Wu CY, Wu CY, Hu C, Tseng T. Bistable Resistive Switching in Al2O3 Memory Thin Films Journal of the Electrochemical Society. 154. DOI: 10.1149/1.2750450  0.76
2007 Hu C, Wu YS. Gettering of Nickel within the Ni-Metal Induced Lateral Crystallization Polycrystalline Silicon Film through the Contact Holes Japanese Journal of Applied Physics. 46. DOI: 10.1143/Jjap.46.L1188  0.8
2007 Hu C, Wu YCS, Gong J. Comparison of Ni-Metal Induced Lateral Crystallization Thin-Film Transistors Fabricated by Rapid Thermal Annealing and Conventional Furnace Annealing at 565 °C Japanese Journal of Applied Physics. 46: 7204-7207. DOI: 10.1143/Jjap.46.7204  0.32
2007 Hu C, Wu YS, Lin C. Improving the Electrical Properties of NILC Poly-Si Films Using a Gettering Substrate Ieee Electron Device Letters. 28: 1000-1003. DOI: 10.1109/Led.2007.907267  0.8
2007 Lin C, Wu C, Wu C, Lee T, Yang F, Hu C, Tseng T. Effect of Top Electrode Material on Resistive Switching Properties of $\hbox{ZrO}_{2}$ Film Memory Devices Ieee Electron Device Letters. 28: 366-368. DOI: 10.1109/Led.2007.894652  0.8
2007 Lin CY, Wu CY, Wu CY, Tseng T, Hu C. Modified resistive switching behavior of ZrO2 memory films based on the interface layer formed by using Ti top electrode Journal of Applied Physics. 102: 94101. DOI: 10.1063/1.2802990  0.96
2006 Charras GT, Hu CK, Coughlin M, Mitchison TJ. Reassembly of contractile actin cortex in cell blebs. The Journal of Cell Biology. 175: 477-90. PMID 17088428 DOI: 10.1083/Jcb.200602085  0.6
2006 Hu CW, Wang CJ, Chang LW, Chao MR. Clinical-scale high-throughput analysis of urinary 8-oxo-7,8-dihydro-2'-deoxyguanosine by isotope-dilution liquid chromatography-tandem mass spectrometry with on-line solid-phase extraction. Clinical Chemistry. 52: 1381-8. PMID 16690738 DOI: 10.1373/Clinchem.2005.063735  0.56
2006 Yen JH, Lin CH, Tsai WC, Wu CC, Ou TT, Hu CJ, Liu HW. Killer cell immunoglobulin-like receptor gene's repertoire in rheumatoid arthritis. Scandinavian Journal of Rheumatology. 35: 124-7. PMID 16641046 DOI: 10.1080/03009740500381252  0.72
2006 Hu CW, Pan CH, Huang YL, Wu MT, Chang LW, Wang CJ, Chao MR. Effects of arsenic exposure among semiconductor workers: a cautionary note on urinary 8-oxo-7,8-dihydro-2'-deoxyguanosine. Free Radical Biology & Medicine. 40: 1273-8. PMID 16545696 DOI: 10.1016/J.Freeradbiomed.2005.12.003  0.56
2006 Yen JH, Lin CH, Tsai WC, Ou TT, Wu CC, Hu CJ, Liu HW. Natural resistance-associated macrophage protein 1 gene polymorphisms in rheumatoid arthritis. Immunology Letters. 102: 91-7. PMID 16125248 DOI: 10.1016/j.imlet.2005.07.008  0.8
2006 Chao MR, Wang CJ, Chang LW, Hu CW. Quantitative determination of urinary N7-ethylguanine in smokers and non-smokers using an isotope dilution liquid chromatography/tandem mass spectrometry with on-line analyte enrichment. Carcinogenesis. 27: 146-51. PMID 16000398 DOI: 10.1093/Carcin/Bgi177  0.56
2006 Li T, Ho W, Chen H, Wang HC-, Chang C, Hu C. Novel dual-metal gate technology using Mo-MoSi/sub x/ combination Ieee Transactions On Electron Devices. 53: 1420-1426. DOI: 10.1109/Ted.2006.874227  0.56
2006 Dunga MV, Lin CH, Xi X, Lu DD, Niknejad AM, Hu C. Modeling advanced FET technology in a compact model Ieee Transactions On Electron Devices. 53: 1971-1977. DOI: 10.1109/Ted.2005.881001  1
2006 Hu J, Xi X, Niknejad A, Hu C. On gate leakage current partition for MOSFET compact model Solid-State Electronics. 50: 1740-1743. DOI: 10.1016/J.Sse.2006.09.016  1
2005 Chao MR, Wang CJ, Yang HH, Chang LW, Hu CW. Rapid and sensitive quantification of urinary N7-methylguanine by isotope-dilution liquid chromatography/electrospray ionization tandem mass spectrometry with on-line solid-phase extraction. Rapid Communications in Mass Spectrometry : Rcm. 19: 2427-32. PMID 16059882 DOI: 10.1002/Rcm.2082  0.56
2005 Yen CC, Chen YJ, Pan CC, Lu KH, Chen PC, Hsia JY, Chen JT, Wu YC, Hsu WH, Wang LS, Huang MH, Huang BS, Hu CP, Chen PM, Lin CH. Copy number changes of target genes in chromosome 3q25.3-qter of esophageal squamous cell carcinoma: TP63 is amplified in early carcinogenesis but down-regulated as disease progressed. World Journal of Gastroenterology : Wjg. 11: 1267-72. PMID 15761962 DOI: 10.3748/wjg.v11.i9.1267  0.6
2005 Cao Y, Huang X, Sylvester D, King TJ, Hu C. Impact of on-chip interconnect frequency-dependent R(f) L(f) on digital and RF design Ieee Transactions On Very Large Scale Integration (Vlsi) Systems. 13: 158-162. DOI: 10.1109/Tvlsi.2004.840399  1
2005 He J, Chan MS, Hu C, Zhang X, Wang YY. A compact model to predict quantized sub-band energy levels and inversion layer centroids of MOSFETs with a parabolic potential well approximation Molecular Simulation. 31: 845-850. DOI: 10.1080/08927020500314050  1
2004 Yen JH, Tsai WC, Lin CH, Ou TT, Hu CJ, Liu HW. Cytochrome p450 1Al gene polymorphisms in patients with psoriatic arthritis. Scandinavian Journal of Rheumatology. 33: 19-23. PMID 15124938  0.68
2004 Yen JH, Tsai WC, Lin CH, Ou TT, Hu CJ, Liu HW. Cytochrome P450 1A1 and manganese superoxide dismutase gene polymorphisms in Behçet's disease. The Journal of Rheumatology. 31: 736-40. PMID 15088300  0.6
2004 Kuo C, King T, Hu C. Bias polarity dependent effects of P+floating gate EEPROMs Ieee Transactions On Electron Devices. 51: 282-285. DOI: 10.1109/Ted.2003.821702  0.56
2003 Yen JH, Tsai WC, Lin CH, Ou TT, Hu CJ, Liu HW. Manganese superoxide dismutase gene polymorphisms in psoriatic arthritis. Disease Markers. 19: 263-5. PMID 15266664  0.64
2003 Yen JH, Tsai WC, Lin CH, Ou TT, Hu CJ, Liu HW. Cytochrome P450 1A1 and manganese superoxide dismutase genes polymorphisms in reactive arthritis. Immunology Letters. 90: 151-4. PMID 14687717  0.6
2003 Yen JH, Chen CJ, Tsai WC, Lin CH, Ou TT, Hu CJ, Liu HW. Cytochrome P450 and manganese superoxide dismutase genes polymorphisms in systemic lupus erythematosus. Immunology Letters. 90: 19-24. PMID 14611903  0.6
2003 Yen CC, Chen YJ, Lu KH, Hsia JY, Chen JT, Hu CP, Chen PM, Liu JH, Chiou TJ, Wang WS, Yang MH, Chao TC, Lin CH. Genotypic analysis of esophageal squamous cell carcinoma by molecular cytogenetics and real-time quantitative polymerase chain reaction. International Journal of Oncology. 23: 871-81. PMID 12963965  0.64
2003 Yen JH, Tsai WC, Chen CJ, Lin CH, Ou TT, Hu CJ, Liu HW. Cytochrome P450 1A1 and manganese superoxide dismutase genes polymorphisms in ankylosing spondylitis. Immunology Letters. 88: 113-6. PMID 12880680  0.6
2003 Yen JH, Tsai WC, Chen CJ, Ou TT, Lin CH, Hu CJ, Liu HW. Tumor necrosis factor receptor 2 microsatellite and exon 6 polymorphisms in rheumatoid arthritis in Taiwan. The Journal of Rheumatology. 30: 438-42. PMID 12610797  0.6
2003 Yen JH, Chen CJ, Tsai WC, Lin CH, Ou TT, Hu CJ, Liu HW. Manganese superoxide dismutase and cytochrome P450 1A1 genes polymorphisms in rheumatoid arthritis in Taiwan. Human Immunology. 64: 366-73. PMID 12590982  0.6
2003 Ha D, Ranade P, Choi YK, Lee JS, King TJ, Hu C. Molybdenum Gate Work Function Engineering for Ultra-Thin-Body Silicon-on-Insulator (UTB SOI) MOSFETs Japanese Journal of Applied Physics. 42: 1979-1982. DOI: 10.1143/Jjap.42.1979  0.8
2003 Cao Y, Hu C, Huang X, Kahng AB, Markov IL, Oliver M, Stroobandt D, Sylvester D. Improved a priori interconnect predictions and technology extrapolation in the GTX system Ieee Transactions On Very Large Scale Integration Systems. 11: 3-14. DOI: 10.1109/Tvlsi.2002.808479  0.52
2003 Yeo Y, King T, Hu C. MOSFET gate leakage modeling and selection guide for alternative gate dielectrics based on leakage considerations Ieee Transactions On Electron Devices. 50: 1027-1035. DOI: 10.1109/Ted.2003.812504  0.64
2003 Sato T, Cao Y, Agarwal K, Sylvester D, Hu C. Bidirectional closed-form transformation between on-chip coupling noise waveforms and interconnect delay-change curves Ieee Transactions On Computer-Aided Design of Integrated Circuits and Systems. 22: 560-572. DOI: 10.1109/Tcad.2003.810750  0.52
2003 Cao Y, Orshansky M, Sato T, Sylvester D, Hu C. Spice up your MOSFET modelling Ieee Circuits & Devices. 19: 17-23. DOI: 10.1109/Mcd.2003.1217613  0.52
2003 Chang L, Choi YK, Kedzierski J, Lindert N, Xuan P, Bokor J, Hu C, King TJ. Moore's law lives on Ieee Circuits and Devices Magazine. 19: 35-42. DOI: 10.1109/Mcd.2003.1175106  1
2003 Kuo C, King T, Hu C. Direct tunneling RAM (DT-RAM) for high-density memory applications Ieee Electron Device Letters. 24: 475-477. DOI: 10.1109/Led.2003.814017  0.56
2003 Lam S, Wan H, Su P, Wyatt PW, Chen CL, Niknejad AM, Hu C, Ko PK, Chan M. RF characterization of metal T-gate structure in fully-depleted SOI CMOS technology Ieee Electron Device Letters. 24: 251-253. DOI: 10.1109/Led.2003.810892  0.68
2003 Su P, Fung SKH, Wyatt PW, Wan H, Niknejad AM, Chan M, Hu C. On the body-source built-in potential lowering of SOI MOSFETs Ieee Electron Device Letters. 24: 90-92. DOI: 10.1109/Led.2002.807696  0.6
2003 Huang X, Restle P, Bucelot T, Cao Y, King T, Hu C. Loop-based interconnect modeling and optimization approach for multigigahertz clock network design Ieee Journal of Solid-State Circuits. 38: 457-463. DOI: 10.1109/Jssc.2002.808313  0.56
2003 Cao Y, Groves RA, Huang X, Zamdmer ND, Plouchart J-, Wachnik RA, King T, Hu C. Frequency-independent equivalent-circuit model for on-chip spiral inductors Ieee Journal of Solid-State Circuits. 38: 419-426. DOI: 10.1109/Jssc.2002.808285  0.56
2003 Yang KJ, King TJ, Hu C, Levy S, Al-Shareef HN. Electron mobility in MOSFETs with ultrathin RTCVD silicon nitride/oxynitride stacked gate dielectrics Solid-State Electronics. 47: 149-153. DOI: 10.1016/S0038-1101(02)00309-X  0.88
2003 Chan M, Xi X, He J, Cao KM, Dunga MV, Niknejad AM, Ko PK, Hu C. Practical compact modeling approaches and options for sub-0.1 μm CMOS technologies Microelectronics Reliability. 43: 399-404. DOI: 10.1016/S0026-2714(02)00278-0  1
2002 Yang KJ, Takeuchi H, King T, Hu C. Frequency Dependence of Capacitance Measurement for Advanced Gate Dielectrics The Japan Society of Applied Physics. DOI: 10.7567/Ssdm.2002.P4-7  0.88
2002 Ha D, Ranade P, Choi Y, Lee J, King T, Hu C. Ultra Thin Body Silicon-On-Insulator (UTB SOI) MOSFET with Metal Gate Work-function Engineering for sub-70 nm Technology Node The Japan Society of Applied Physics. 782-783. DOI: 10.7567/Ssdm.2002.D-7-2  0.6
2002 Lin C, Wang C, Ge C, Huang C, Chang T, Yao L, Chen S, Liang M, Yang F, Yeo Y, Hu C. Novel Strained-Si Substrate Technology for Transistor Performance Enhancement The Japan Society of Applied Physics. DOI: 10.7567/Ssdm.2002.A-1-3  0.8
2002 Cao Y, Huang X, Chang NH, Lin S, Nakagawa OS, Xie W, Sylvester D, Hu C. Effective on-chip inductance modeling for multiple signal lines and application to repeater insertion Ieee Transactions On Very Large Scale Integration Systems. 10: 799-805. DOI: 10.1109/Tvlsi.2002.808426  0.52
2002 Chang L, Yang KJ, Yeo YC, Polishchuk I, King TJ, Hu C. Direct-tunneling gate leakage current in double-gate and ultrathin body MOSFETs Ieee Transactions On Electron Devices. 49: 2288-2294. DOI: 10.1109/Ted.2002.807446  1
2002 He J, Xi X, Chan M, Hu C, Li Y, Zhang X, Huang R, Wang Y. Equivalent junction method to predict 3-D effect of curved-abrupt p-n junctions Ieee Transactions On Electron Devices. 49: 1322-1325. DOI: 10.1109/Ted.2002.1013296  0.6
2002 Su P, Goto K, Sugii T, Hu C. A thermal activation view of low voltage impact ionization in MOSFETs Ieee Electron Device Letters. 23: 550-552. DOI: 10.1109/Led.2002.802653  0.56
2002 He J, Xi X, Chan M, Cao K, Hu C, Li Y, Zhang X, Huang R, Wang Y. Normalized mutual integral difference method to extract threshold voltage of MOSFETs Ieee Electron Device Letters. 23: 428-430. DOI: 10.1109/Led.2002.1015230  0.6
2002 Hu C, King T, Hu C. A capacitorless double-gate DRAM cell Ieee Electron Device Letters. 23: 345-347. DOI: 10.1109/Led.2002.1004230  0.56
2002 Yeo Y, Ranade P, King T, Hu C. Effects of high-/spl kappa/ gate dielectric materials on metal and silicon gate workfunctions Ieee Electron Device Letters. 23: 342-344. DOI: 10.1109/Led.2002.1004229  0.64
2002 Su P, Goto K, Sugii T, Hu C. Enhanced substrate current in SOI MOSFETs Ieee Electron Device Letters. 23: 282-284. DOI: 10.1109/55.998877  0.56
2002 Polishchuk I, Ranade P, King TJ, Hu C. Dual work function metal gate CMOS transistors by Ni-Ti interdiffusion Ieee Electron Device Letters. 23: 200-202. DOI: 10.1109/55.992838  1
2002 She M, King T, Hu C, Zhu W, Luo Z, Han J, Ma T. JVD silicon nitride as tunnel dielectric in p-channel flash memory Ieee Electron Device Letters. 23: 91-93. DOI: 10.1109/55.981316  0.56
2002 Lin R, Lu Q, Ranade P, King T, Hu C. An adjustable work function technology using Mo gate for CMOS devices Ieee Electron Device Letters. 23: 49-51. DOI: 10.1109/55.974809  0.72
2002 Choi Y, King T, Hu C. Nanoscale CMOS spacer FinFET for the terabit era Ieee Electron Device Letters. 23: 25-27. DOI: 10.1109/55.974801  0.56
2002 Orshansky M, Milor L, Chen P, Keutzer K, Hu C. Impact of spatial intrachip gate length variability on the performance of high-speed digital circuits Ieee Transactions On Computer-Aided Design of Integrated Circuits and Systems. 21: 544-553. DOI: 10.1109/43.998626  0.32
2002 He J, Wang Y, Zhang X, Xi X, Chan M, Huang R, Hu C. A simple method for optimization of 6H-SiC punch-through junctions used in both unipolar and bipolar power devices Ieee Transactions On Electron Devices. 49: 933-937. DOI: 10.1109/16.998606  0.6
2002 Choi Y, King T, Hu C. A spacer patterning technology for nanoscale CMOS Ieee Transactions On Electron Devices. 49: 436-441. DOI: 10.1109/16.987114  0.56
2002 Yeo YC, Subramanian V, Kedzierski J, Xuan P, King TJ, Bokor J, Hu C. Design and fabrication of 50-nm thin-body p-MOSFETs with a SiGe heterostructure channel Ieee Transactions On Electron Devices. 49: 279-286. DOI: 10.1109/16.981218  1
2002 He J, Xi X, Chan MS, Hu C, Li Y, Xing Z, Huang R. Linearly graded doping drift region: A novel lateral voltage-sustaining layer used for improvement of RESURF LDMOS transistor performances Semiconductor Science and Technology. 17: 721-728. DOI: 10.1088/0268-1242/17/7/315  0.6
2002 Yeo YC, King TJ, Hu C. Metal-dielectric band alignment and its implications for metal gate complementary metal-oxide-semiconductor technology Journal of Applied Physics. 92: 7266-7271. DOI: 10.1063/1.1521517  0.8
2002 Yeo YC, King TJ, Hu C. Direct tunneling leakage current and scalability of alternative gate dielectrics Applied Physics Letters. 81: 2091-2093. DOI: 10.1063/1.1506941  0.8
2002 Choi YK, King TJ, Hu C. Spacer FinFET: nanoscale double-gate CMOS technology for the terabit era Solid-State Electronics. 46: 1595-1601. DOI: 10.1016/S0038-1101(02)00111-9  0.8
2001 Ranade P, Takeuchi H, King T, Hu C. Work Function Engineering of Molybdenum Gate Electrodes by Nitrogen Implantation Electrochemical and Solid State Letters. 4. DOI: 10.1149/1.1402497  0.6
2001 Polishchuk I, Yeo YC, Lu Q, King TJ, Hu C. Hot-carrier reliability comparison for pmosfets with ultrathin silicon-nitride and silicon-oxide gate dielectrics Ieee Transactions On Device and Materials Reliability. 1: 158-162. DOI: 10.1109/7298.974831  1
2001 Polishchuk I, Lu Q, Yeo YC, King TJ, Hu C. Intrinsic reliability projections for a thin jvd silicon nitride gate dielectric in p-mosfet Ieee Transactions On Device and Materials Reliability. 1: 4-8. DOI: 10.1109/7298.946454  1
2001 Lindert N, Chang L, Choi YK, Anderson EH, Lee WC, King TJ, Bokor J, Hu C. Sub-60-nm quasi-planar FinFETs fabricated using a simplified process Ieee Electron Device Letters. 22: 487-489. DOI: 10.1109/55.954920  1
2001 Choi Y, Ha D, King T, Hu C. Nanoscale ultrathin body PMOSFETs with raised selective germanium source/drain Ieee Electron Device Letters. 22: 447-448. DOI: 10.1109/55.944335  0.56
2001 Polishchuk I, Ranade P, King TJ, Hu C. Dual work function metal gate CMOS technology using metal interdiffusion Ieee Electron Device Letters. 22: 444-446. DOI: 10.1109/55.944334  1
2001 Lu Q, Yeo YC, Yang KJ, Lin R, Polishchuk I, King TJ, Hu C, Song SC, Luan HF, Kwong DL, Guo X, Luo Z, Wang X, Tso-Ping M. Two silicon nitride technologies for post-SiO2 MOSFET gate dielectric Ieee Electron Device Letters. 22: 324-326. DOI: 10.1109/55.930679  1
2001 Yeo YC, Lu Q, Ranade P, Takeuchi H, Yang KJ, Polishchuk I, King TJ, Hu C, Song SC, Luan HF, Kwong DL. Dual-metal gate CMOS technology with ultrathin silicon nitride gate dielectric Ieee Electron Device Letters. 22: 227-229. DOI: 10.1109/55.919237  1
2001 Sato T, Sylvester D, Cao Y, Hu C. Accurate in situ measurement of peak noise and delay change induced by interconnect coupling Ieee Journal of Solid-State Circuits. 36: 1587-1591. DOI: 10.1109/4.953489  0.52
2001 King Y, Kuo C, King T, Hu C. Optimization of sub-5-nm multiple-thickness gate oxide formed by oxygen implantation Ieee Transactions On Electron Devices. 48: 1279-1281. DOI: 10.1109/16.925262  0.56
2001 Asano K, Choi Y, King T, Hu C. Patterning sub-30-nm MOSFET gate with i-line lithography Ieee Transactions On Electron Devices. 48: 1004-1006. DOI: 10.1109/16.918251  0.56
2001 Huang X, Lee W, Kuo C, Hisamoto D, Chang L, Kedzierski J, Anderson E, Takeuchi H, Choi Y, Asano K, Subramanian V, King T, Bokor J, Hu C. Sub-50 nm P-channel FinFET Ieee Transactions On Electron Devices. 48: 880-886. DOI: 10.1109/16.918235  1
2001 Jin W, Liu W, Hai C, Chan PCH, Hu C. Noise modeling and characterization for 1.5-V 1.8-GHz SOI low-noise amplifier Ieee Transactions On Electron Devices. 48: 803-809. DOI: 10.1109/16.915730  0.56
2001 Jin W, Liu W, Fung SKH, Chan PCH, Hu C. SOI thermal impedance extraction methodology and its significance for circuit simulation Ieee Transactions On Electron Devices. 48: 730-736. DOI: 10.1109/16.915707  0.56
2001 King Y, King T, Hu C. Charge-trap memory device fabricated by oxidation of Si/sub 1-x/Ge/sub x/ Ieee Transactions On Electron Devices. 48: 696-700. DOI: 10.1109/16.915694  0.56
2001 Yeo Y, Lu Q, Hu C. MOSFET Gate Oxide Reliability: Anode Hole Injection Model and its Applications International Journal of High Speed Electronics and Systems. 11: 849-886. DOI: 10.1016/S0129-1564(01)00101-5  0.72
2000 Yeo YC, Lu Q, Lee WC, King T, Hu C, Wang X, Guo X, Ma TP. Direct tunneling gate leakage current in transistors with ultrathin silicon nitride gate dielectric Ieee Electron Device Letters. 21: 540-542. DOI: 10.1109/55.877204  0.8
2000 Yeo YC, Subramanian V, Kedzierski J, Xuan P, King TJ, Bokor J, Hu C. Nanoscale ultra-thin-body silicon-on-insulator P-MOSFET with a SiGe/Si heterostructure channel Ieee Electron Device Letters. 21: 161-163. DOI: 10.1109/55.830968  1
2000 Tin SF, Osman AA, Mayaram K, Hu C. A Simple Subcircuit Extension of the BSIM3v3 Model for CMOS RF Design Ieee Journal of Solid-State Circuits. 35: 612-623. DOI: 10.1109/4.839921  1
2000 Hisamoto D, Lee W, Kedzierski J, Takeuchi H, Asano K, Kuo C, Anderson E, King T, Bokor J, Hu C. FinFET-a self-aligned double-gate MOSFET scalable to 20 nm Ieee Transactions On Electron Devices. 47: 2320-2325. DOI: 10.1109/16.887014  0.64
2000 Polishchuk I, Hu C. Polycrystalline silicon/metal stacked gate for threshold voltage control in metal–oxide–semiconductor field-effect transistors Applied Physics Letters. 76: 1938-1940. DOI: 10.1063/1.126218  1
2000 Kedzierski J, Xuan P, Subramanian V, Bokor J, King TJ, Hu C, Anderson E. 20 nm gate-length ultra-thin body p-MOSFET with silicide source/drain Superlattices and Microstructures. 28: 445-452. DOI: 10.1006/Spmi.2000.0947  1
2000 Chang L, Hu C. MOSFET scaling into the 10 nm regime Superlattices and Microstructures. 28: 351-355. DOI: 10.1006/Spmi.2000.0933  1
1999 Lee W, King Y, King T, Hu C. Observation of Reduced Poly‐Gate Depletion Effect for Poly ‐ Si0.8Ge0.2 ‐ Gated NMOS Devices Electrochemical and Solid State Letters. 1: 58-59. DOI: 10.1149/1.1390635  0.56
1999 Orshansky M, Chen JC, Hu C. Direct sampling methodology for statistical analysis of scaled CMOS technologies Ieee Transactions On Semiconductor Manufacturing. 12: 403-408. DOI: 10.1109/66.806117  0.44
1999 King Y, King T, Hu C. A long-refresh dynamic/quasi-nonvolatile memory device with 2-nm tunneling oxide Ieee Electron Device Letters. 20: 409-411. DOI: 10.1109/55.778160  0.56
1999 Lee W, King T, Hu C. Evidence of hole direct tunneling through ultrathin gate oxide using P/sup +/ poly-SiGe gate Ieee Electron Device Letters. 20: 268-270. DOI: 10.1109/55.767094  0.56
1999 Lee W, Watson B, King T, Hu C. Enhancement of PMOS device performance with poly-SiGe gate Ieee Electron Device Letters. 20: 232-234. DOI: 10.1109/55.761024  0.56
1999 Lee W, King T, Hu C. Observation of reduced boron penetration and gate depletion for poly-Si/sub 0.8/Ge/sub 0.2/ gated PMOS devices Ieee Electron Device Letters. 20: 9-11. DOI: 10.1109/55.737557  0.56
1999 Chen JF, Tao J, Fang P, Hu C. Performance and reliability comparison between asymmetric and symmetric LDD devices and logic gates Ieee Journal of Solid-State Circuits. 34: 367-371. DOI: 10.1109/4.748188  0.4
1999 Lindert N, Sugii T, Tang S, Hu C. Dynamic threshold pass-transistor logic for improved delay at lower power supply voltages Ieee Journal of Solid-State Circuits. 34: 85-89. DOI: 10.1109/4.736659  1
1999 Ishimaru K, Chen JF, Hu C. Channel width dependence of hot-carrier induced degradation in shallow trench isolated PMOSFETs Ieee Transactions On Electron Devices. 46: 1532-1536. DOI: 10.1109/16.772507  0.32
1999 Yang KJ, Hu C. MOS capacitance measurements for high-leakage thin dielectrics Ieee Transactions On Electron Devices. 46: 1500-1501. DOI: 10.1109/16.772500  1
1999 Yamamichi S, Yamamichi A, Park D, King T, Hu C. Impact of time dependent dielectric breakdown and stress-induced leakage current on the reliability of high dielectric constant (Ba,Sr)TiO/sub 3/ thin-film capacitors for Gbit-scale DRAMs Ieee Transactions On Electron Devices. 46: 342-347. DOI: 10.1109/16.740900  0.56
1999 Hu C. Silicon nanoelectronics for the 21st century Nanotechnology. 10: 113-116. DOI: 10.1088/0957-4484/10/2/301  1
1999 Chang L, Kuo C, Hu C, Kalnitsky A, Bergemont A, Francis P. Non-volatile memory device with true CMOS compatibility Electronics Letters. 35: 1443-1445. DOI: 10.1049/El:19990983  1
1999 Park D, Hu C. The prospect of process-induced charging damage in future thin gate oxides Microelectronics Reliability. 39: 567-577. DOI: 10.1016/S0026-2714(99)00032-3  0.4
1998 Liu W, Hu C. Bsim3V3 Mosfet Model International Journal of High Speed Electronics and Systems. 9: 671-701. DOI: 10.1142/S0129156498000294  0.56
1998 Chen JC, Sylvester D, Hu C. An on-chip, interconnect capacitance characterization method with sub-femto-farad resolution Ieee Transactions On Semiconductor Manufacturing. 11: 204-210. DOI: 10.1109/66.670160  0.44
1998 Park D, King Y, Lu Q, King T, Hu C, Kalnitsky A, Tay S, Cheng C. Transistor characteristics with Ta/sub 2/O/sub 5/ gate dielectric Ieee Electron Device Letters. 19: 441-443. DOI: 10.1109/55.728906  0.72
1998 Lu Q, Park D, Kalnitsky A, Chang C, Cheng C, Tay SP, King T, Hu C. Leakage current comparison between ultra-thin Ta 2 O 5 films and conventional gate dielectrics Ieee Electron Device Letters. 19: 341-342. DOI: 10.1109/55.709635  0.72
1998 Chen JF, Ishimaru K, Hu C. Enhanced hot-carrier induced degradation in shallow trench isolated narrow channel PMOSFET's Ieee Electron Device Letters. 19: 332-334. DOI: 10.1109/55.709632  0.32
1998 Sinitsky D, Tang S, Jangity A, Assaderaghi F, Shahidi G, Hu C. Simulation of SOI devices and circuits using BSIM3SOI Ieee Electron Device Letters. 19: 323-325. DOI: 10.1109/55.709628  0.56
1998 Lee W, King Y, King T, Hu C. Investigation of poly-Si/sub 1-x/Ge/sub x/ for dual-gate CMOS technology Ieee Electron Device Letters. 19: 247-249. DOI: 10.1109/55.701432  0.56
1998 Chen JF, Tao J, Fang P, Hu C. 0.35-μm asymmetric and symmetric LDD device comparison using a reliability/speed/power methodology Ieee Electron Device Letters. 19: 216-218. DOI: 10.1109/55.701421  0.48
1998 Park D, Hu C. Plasma charging damage on ultrathin gate oxides Ieee Electron Device Letters. 19: 1-3. DOI: 10.1109/55.650333  0.4
1998 Cheng Y, Chen K, Imai K, Hu C. A unified MOSFET channel charge model for device modeling in circuit simulation Ieee Transactions On Computer-Aided Design of Integrated Circuits and Systems. 17: 641-644. DOI: 10.1109/43.712096  0.72
1998 Chen K, Hu C. Performance and V/sub dd/ scaling in deep submicrometer CMOS Ieee Journal of Solid-State Circuits. 33: 1586-1589. DOI: 10.1109/4.720410  0.72
1998 Sylvester D, Chen JC, Hu C. Investigation of interconnect capacitance characterization using charge-based capacitance measurement (CBCM) technique and three-dimensional simulation Ieee Journal of Solid-State Circuits. 33: 449-453. DOI: 10.1109/4.661210  0.44
1998 Yu B, Ju D, Lee W, Kepler N, King T, Hu C. Gate engineering for deep-submicron CMOS transistors Ieee Transactions On Electron Devices. 45: 1253-1262. DOI: 10.1109/16.678529  0.56
1998 Chan M, Hui KY, Hu C, Ko PK. A robust and physical BSIM3 non-quasi-static transient and AC small-signal model for circuit simulation Ieee Transactions On Electron Devices. 45: 834-841. DOI: 10.1109/16.662788  0.68
1998 King YC, Fujioka H, Kamohara S, Chen K, Hu C. Dc electrical oxide thickness model for quantization of the inversion layer in MOSFETs Semiconductor Science and Technology. 13: 963-966. DOI: 10.1088/0268-1242/13/8/001  0.72
1998 Chen K, Hu C, Fang P, Gupta A, Lin MR, Wollesen DL. Experimental studies on deep submicron CMOS scaling Semiconductor Science and Technology. 13: 816-820. DOI: 10.1088/0268-1242/13/7/027  0.72
1998 Chen K, Hu C, Fang P, Lin MR, Wollesen DL. Two experimental methods to characterize load capacitance of a CMOS gate Semiconductor Science and Technology. 13: 773-775. DOI: 10.1088/0268-1242/13/7/019  0.72
1998 King YC, Hu C, Fujioka H, Kamohara S. Small signal electron charge centroid model for quantization of inversion layer in a metal-on-insulator field-effect transistor Applied Physics Letters. 72: 3476-3478. DOI: 10.1063/1.121671  0.4
1998 Yu B, Imai K, Hu C. Characterization of Global Inversion Layer in Thin-Gate-Oxide Deep-Submicron p-MOSFETs Solid-State Electronics. 42: 401-404. DOI: 10.1016/S0038-1101(97)00204-9  0.72
1998 Tao J, Liew BK, Chen J, Cheung NW, Hu C. Electromigration under time-varying current stress Microelectronics Reliability. 38: 295-308. DOI: 10.1016/S0026-2714(97)00057-7  0.68
1998 Fujioka H, Oshima M, Hu C, Sumiya M, Matsuki N, Miyazaki K, Koinuma H. Characteristics of field effect a-Si:H solar cells Journal of Non-Crystalline Solids. 227: 1287-1290. DOI: 10.1016/S0022-3093(98)00353-6  0.4
1997 Mu SC, Lin CH, Lin MI, Hu CC. Pseudomonas aeruginosa endophthalmitis in prematurity: report of two cases. Zhonghua Minguo Xiao Er Ke Yi Xue Hui Za Zhi [Journal]. Zhonghua Minguo Xiao Er Ke Yi Xue Hui. 38: 159-61. PMID 9151472  0.88
1997 Fujioka H, Ono K, Sato Y, Hu C, Oshima M. Simulation of 2-Dimensional Hole Gas for PMOS Devices with Phosphorus Pile-Up The Japan Society of Applied Physics. 1997: 508-509. DOI: 10.7567/Ssdm.1997.C-12-1  0.4
1997 Yu B, Ju DH, Kepler N, King TJ, Hu C. Impact of gate microstructure on complementary metal-oxide-semiconductor transistor performance Japanese Journal of Applied Physics. 36. DOI: 10.1143/Jjap.36.L1150  0.8
1997 Gupta A, Fang P, Song M, Lin M, Wollesen D, Chen K, Hu C. Accurate determination of ultrathin gate oxide thickness and effective polysilicon doping of CMOS devices Ieee Electron Device Letters. 18: 580-582. DOI: 10.1109/55.644077  0.72
1997 Yu B, Ju D, Kepler N, Hu C. Impact of nitrogen (N/sub 14/) implantation into polysilicon gate on high-performance dual-gate CMOS transistors Ieee Electron Device Letters. 18: 312-314. DOI: 10.1109/55.596922  0.48
1997 Chen K, Hu C, Fang P, Gupta A. Experimental confirmation of an accurate CMOS gate delay model for gate oxide and voltage scaling Ieee Electron Device Letters. 18: 275-277. DOI: 10.1109/55.585355  0.72
1997 McGaughy BW, Chen JC, Sylvester D, Hu C. A simple method for on-chip, sub-femto Farad interconnect capacitance measurement Ieee Electron Device Letters. 18: 21-23. DOI: 10.1109/55.553064  0.44
1997 Sinitsky D, Tu R, Liang C, Chan M, Bokor J, Hu C. AC output conductance of SOI MOSFETs and impact on analog applications Ieee Electron Device Letters. 18: 36-38. DOI: 10.1109/55.553036  0.64
1997 Iyer SSK, Lu X, Liu J, Min J, Fan Z, Chu PK, Hu C, Cheung NW. Separation by plasma implantation of oxygen (SPIMOX) operational phase space Ieee Transactions On Plasma Science. 25: 1128-1135. DOI: 10.1109/27.649635  0.36
1997 Chen K, Hu C, Fang P, Lin MR, Wollesen DL. Predicting CMOS speed with gate oxide and voltage scaling and interconnect loading effects Ieee Transactions On Electron Devices. 44: 1951-1957. DOI: 10.1109/16.641365  0.72
1997 Chen K, Hu C, Fang P, Lin MR, Wollesen DL. Optimizing quarter and sub-quarter micron CMOS circuit speed considering interconnect loading effects Ieee Transactions On Electron Devices. 44: 1556-1558. DOI: 10.1109/16.622616  0.72
1997 Tu R, King JC, Shin H, Hu C. Simulating process-induced gate oxide damage in circuits Ieee Transactions On Electron Devices. 44: 1393-1400. DOI: 10.1109/16.622593  0.44
1997 Assaderaghi F, Sinitsky D, Bokor J, Ko PK, Gaw H, Hu C. High-field transport of inversion-layer electrons and holes including velocity overshoot Ieee Transactions On Electron Devices. 44: 664-671. DOI: 10.1109/16.563373  0.68
1997 Yu B, Wann CHJ, Nowak ED, Noda K, Hu C. Short-channel effect improved by lateral channel-engineering in deep-submicronmeter MOSFET's Ieee Transactions On Electron Devices. 44: 627-634. DOI: 10.1109/16.563368  0.48
1997 Cheng Y, Jeng M, Liu Z, Huang J, Chan M, Chen K, Ko PK, Hu C. A physical and scalable I-V model in BSIM3v3 for analog/digital circuit simulation Ieee Transactions On Electron Devices. 44: 277-287. DOI: 10.1109/16.557715  1
1997 Chain K, Huang JH, Duster J, Ko PK, Hu C. A MOSFET electron mobility model of wide temperature range (77 - 400 K) for IC simulation Semiconductor Science and Technology. 12: 355-358. DOI: 10.1088/0268-1242/12/4/002  0.68
1997 Yu B, Imai K, Hu C. Electrical characterization of inversion layer carrier profile in deep-submicron p-MOSFETs Semiconductor Science and Technology. 12: 1355-1357. DOI: 10.1088/0268-1242/12/11/005  0.72
1997 Cheng Y, Imai K, Jeng MC, Liu Z, Chen K, Hu C. Modelling temperature effects of quarter micrometre MOSFETs in BSIM3v3 for circuit simulation Semiconductor Science and Technology. 12: 1349-1354. DOI: 10.1088/0268-1242/12/11/004  1
1997 Lu X, Iyer SSK, Hu C, Cheung NW, Min J, Fan Z, Chu PK. Ion-cut silicon-on-insulator fabrication with plasma immersion ion implantation Applied Physics Letters. 71: 2767-2769. DOI: 10.1063/1.120127  0.44
1997 Lu X, Iyer SSK, Liu J, Hu C, Cheung NW, Min J, Chu PK. Separation of plasma implantation of oxygen to form silicon on insulator Applied Physics Letters. 70: 1748-1750. DOI: 10.1063/1.118645  0.52
1997 Cheng Y, Sugii T, Chen K, Hu C. Modeling of small size MOSFETs with reverse short channel and narrow width effects for circuit simulation Solid-State Electronics. 41: 1227-1231. DOI: 10.1016/S0038-1101(97)00126-3  0.72
1997 Sinitsky D, Assaderaghi F, Orshansky M, Bokor J, Hu C. Velocity overshoot of electrons and holes in Si inversion layers Solid-State Electronics. 41: 1119-1125. DOI: 10.1016/S0038-1101(97)00031-2  0.64
1997 Chen K, Zhang G, Duster J, Hu C, Huang J, Liu Z, Ko PK. MOSFET inversion layer capacitance model based on Fermi-Dirac statistics for wide temperature range Solid-State Electronics. 41: 507-509. DOI: 10.1016/S0038-1101(96)00104-9  1
1996 Fujioka H, Wann HJ, Park DG, King YC, Chyan YF, Oshima M, Hu C. Tunneling current through MIS structures with ultra-thin insulators Mrs Proceedings. 428: 415-420. DOI: 10.1557/Proc-428-415  0.4
1996 Koinuma H, Fujioka H, Hu C, Koida T, Kawasaki M. Structure and Numerical Simulation of Field Effect Solar Cell Mrs Proceedings. 426: 95-100. DOI: 10.1557/Proc-426-95  0.4
1996 Nguyen KB, Cardinale GF, Tichenor DA, Kubiak GD, Berger K, Ray-Chaudhuri AK, Perras Y, Haney SJ, Nissen R, Krenz K, Stulen RH, Fujioka H, Hu C, Bokor J, Tennant DM, et al. Fabrication of metal–oxide–semiconductor devices with extreme ultraviolet lithography Journal of Vacuum Science & Technology B. 14: 4188-4192. DOI: 10.1116/1.588618  0.64
1996 Park D, Hu C, Zheng S, Bui N. A full-process damage detection method using small MOSFET and protection diode Ieee Electron Device Letters. 17: 563-565. DOI: 10.1109/55.545771  0.4
1996 Lindert N, Yoshida M, Wann C, Hu C. Comparison of GIDL in p+-poly PMOS and n+-poly PMOS Devices Ieee Electron Device Letters. 17: 285-287. DOI: 10.1109/55.496459  1
1996 Chen K, Wann HC, Ko PK, Hu C. The impact of device scaling and power supply change on CMOS gate performance Ieee Electron Device Letters. 17: 202-204. DOI: 10.1109/55.491829  0.72
1996 Chen K, Wann HC, Duster J, Pramanik D, Nariani S, Ko PK, Hu C. An accurate semi-empirical saturation drain current model for LDD n-MOSFET Ieee Electron Device Letters. 17: 145-147. DOI: 10.1109/55.485195  0.72
1996 King Y, Yu B, Pohlman J, Hu C. Punchthrough diode as the transient voltage suppressor for low-voltage electronics Ieee Transactions On Electron Devices. 43: 2037-2040. DOI: 10.1109/16.543049  0.48
1996 Tao J, Cheung NW, Hu C. Characterization and modeling of electromigration failures in multilayered interconnects and barrier layer materials Ieee Transactions On Electron Devices. 43: 1819-1825. DOI: 10.1109/16.543013  0.36
1996 Tao J, Chen JF, Cheung NW, Hu C. Modeling and characterization of electromigration failures under bidirectional current stress Ieee Transactions On Electron Devices. 43: 800-808. DOI: 10.1109/16.491258  1
1996 Rosenbaum E, King JC, Hu C. Accelerated testing of SiO/sub 2/ reliability Ieee Transactions On Electron Devices. 43: 70-80. DOI: 10.1109/16.477595  1
1996 Shin HC, Hu C. Thin gate oxide damage due to plasma processing Semiconductor Science and Technology. 11: 463-473. DOI: 10.1088/0268-1242/11/4/002  0.4
1996 Cheng Y, Jeng MC, Liu Z, Chen K, Yu B, Imai K, Hu C. Quarter-micrometre surface and buried channel PMOSFET modelling for circuit simulation Semiconductor Science and Technology. 11: 1763-1769. DOI: 10.1088/0268-1242/11/12/001  1
1996 Yu B, Ma Z, Zhang G, Hu C. Hot-carrier-induced degradation in ultra-thin-film fully-depleted SOI MOSFETs Solid-State Electronics. 39: 1791-1794. DOI: 10.1016/S0038-1101(96)00095-0  0.56
1996 Chen K, Wann HC, Dunster J, Ko PK, Hu C, Yoshida M. MOSFET carrier mobility model based on gate oxide thickness, threshold and gate voltages Solid-State Electronics. 39: 1515-1518. DOI: 10.1016/0038-1101(96)00059-7  0.72
1996 Chen K, Cheng Y, Hu C, Liu ZH, Jeng M, Ping KK. Modeling of a MOSFET's parasitic resistance's narrow width and body bias effects for an IC simulator Solid-State Electronics. 39: 1405-1408. DOI: 10.1016/0038-1101(96)00019-6  0.72
1996 Chen K, Huang JH, Ma JZ, Liu ZH, Jeng MC, Ko PK, Hu C. Temperature effects on MOSFET driving capability and voltage gain Solid-State Electronics. 39: 699-701. DOI: 10.1016/0038-1101(95)00197-2  0.72
1995 Fujioka H, Wann C, Park D, Hu C. Characterization of Mos Structures with Ultra-Thin Tunneling Oxynitride Mrs Proceedings. 405: 333. DOI: 10.1557/Proc-405-333  0.4
1995 Liu J, Iyer SSK, Min J, Chu P, Gronsky R, Hu C, Cheung NW. Competitive Oxidation During Buried Oxide Formation Using Separation by Plasma Implantation of Oxygen (Spimox) Mrs Proceedings. 388: 385-391. DOI: 10.1557/Proc-388-385  0.48
1995 Rosenbaum E, Kuusinen SB, Ko PK, Minami ER, Hu C. Circuit-Level Simulation of TDDB Failure in Digital CMOS Circuits Ieee Transactions On Semiconductor Manufacturing. 8: 370-374. DOI: 10.1109/66.401018  1
1995 Tao J, Cheung NW, Hu C. Electromigration Characteristics of TiN Barrier Layer Material Ieee Electron Device Letters. 16: 230-232. DOI: 10.1109/55.790718  1
1995 Tao J, Cheung NW, Hu C. Modeling Electromigration Lifetime Under Bidirectional Current Stress Ieee Electron Device Letters. 16: 476-478. DOI: 10.1109/55.468272  1
1995 King Y, Yu B, Pohlman J, Hu C. Punchthrough transient voltage suppressor for low-voltage electronics Ieee Electron Device Letters. 16: 303-305. DOI: 10.1109/55.388715  0.48
1995 Tu RH, Wann C, King JC, Ko PK, Hu C. An AC Conductance Technique for Measuring Self-Heating in SOI MOSFET's Ieee Electron Device Letters. 16: 67-69. DOI: 10.1109/55.386025  0.68
1995 Chan M, King JC, Ko PK, Hu C. SOI/bulk hybrid technology on SIMOX wafers for high performance circuits with good ESD immunity Ieee Electron Device Letters. 16: 11-13. DOI: 10.1109/55.363215  0.68
1995 Chan M, Yu B, Ma Z, Nguyen CT, Hu C, Ko PK. Comparative study of fully depleted and body-grounded non fully depleted SOI MOSFETs for high performance analog and mixed signal circuits Ieee Transactions On Electron Devices. 42: 1975-1981. DOI: 10.1109/16.469406  0.68
1995 Chan M, Yuen SS, Ma Z, Hui KY, Ko PK, Hu C. ESD reliability and protection schemes in SOI CMOS output buffers Ieee Transactions On Electron Devices. 42: 1816-1821. DOI: 10.1109/16.464414  0.68
1995 Zhang G, Hu C, Yu PY, Chiang S, Eltoukhy S, Hamdy EZ. An electro-thermal model for metal-oxide-metal antifuses Ieee Transactions On Electron Devices. 42: 1548-1558. DOI: 10.1109/16.398671  0.56
1995 Shih YC, Zhang G, Hu C, Oldham WG. Thin dielectric degradation during silicon selective epitaxial growth process Applied Physics Letters. 67: 2040-2042. DOI: 10.1063/1.115071  0.56
1995 Liu J, Sundar Kumar Iyer S, Hu C, Cheung NW, Gronsky R, Min J, Chu P. Formation of buried oxide in silicon using separation by plasma implantation of oxygen Applied Physics Letters. 67: 2361. DOI: 10.1063/1.114345  1
1995 Chen K, Chan MS, Ko PK, Hu C, Huang J. Polysilicon gate depletion effect on IC performance Solid-State Electronics. 38: 1975-1977. DOI: 10.1016/0038-1101(95)00108-6  0.72
1995 Pavan P, Tu R, Minami E, Lum G, Ko PK, Hu C. Simulating radiation reliability with BERT Microelectronics Journal. 26: 627-633. DOI: 10.1016/0026-2692(95)00022-A  0.68
1994 Liu JB, Iyer SSK, Min J, Chu P, Gronsky R, Hu C, Cheung NW. Formation of silicon on insulator (SOI) with separation by plasma implantation of oxygen (SPIMOX) Mrs Proceedings. 354: 117-122. DOI: 10.1557/Proc-354-117  0.48
1994 Hu C. SOI (Silicon-on-insulator) for high speed ultra large scale integration Japanese Journal of Applied Physics. 33: 365-369. DOI: 10.1143/Jjap.33.365  1
1994 Assaderaghi F, Parke S, Sinitsky D, Bokor J, Ko PK, Hu C. A Dynamic Threshold Voltage MOSFET (DTMOS) for Very Low Voltage Operation Ieee Electron Device Letters. 15: 510-512. DOI: 10.1109/55.338420  1
1994 King JC, Hu C. Effect of Low and High Temperature Anneal on Process-Induced Damage of Gate Oxide Ieee Electron Device Letters. 15: 475-476. DOI: 10.1109/55.334672  1
1994 Zhang G, Hu C, Yu P, Chiang S, Hamdy E. Characteristic voltage of programmed metal-to-metal antifuses Ieee Electron Device Letters. 15: 166-168. DOI: 10.1109/55.291598  0.56
1994 Chan M, Assaderaghi F, Hu C, Ko PK, Parke SA. Recessed-Channel Structure for Fabricating Ultrathin SOI MOSFET with Low Series Resistance Ieee Electron Device Letters. 15: 22-24. DOI: 10.1109/55.289474  1
1994 Ma ZJ, Wann HJ, Chan M, King JC, Cheng YC, Ko PK, Hu C. Hot-carrier effects in thin-film fully depleted SOI MOSFET's Ieee Electron Device Letters. 15: 218-220. DOI: 10.1109/55.286697  0.68
1994 Ma ZJ, Chen JC, Liu ZH, Krick JT, Cheng YC, Hu C, Ko PK. Suppression of boron penetration in p/sup +/ polysilicon gate P-MOSFETs using low-temperature gate-oxide N/sub 2/O anneal Ieee Electron Device Letters. 15: 109-111. DOI: 10.1109/55.285386  0.68
1994 Pavan P, Tu RH, Minami ER, Hu C, Ko PK, Lum G. A Complete Radiation Reliability Software Simulator Ieee Transactions On Nuclear Science. 41: 2619-2630. DOI: 10.1109/23.340623  0.68
1994 Ma Z, Liu ZH, Krick JT, Huang HJ, Cheng YC, Hu C, Ko PK. Optimization of gate oxide N/sub 2/O anneal for CMOSFET's at room and cryogenic temperatures Ieee Transactions On Electron Devices. 41: 1364-1372. DOI: 10.1109/16.297731  0.68
1994 Lee PM, Garfinkel T, Ko PK, Hu C. Simulating the competing effects of P- and N-MOSFET hot-carrier aging in CMOS circuits Ieee Transactions On Electron Devices. 41: 852-853. DOI: 10.1109/16.285044  0.68
1994 Quader KN, Ko PK, Fang P, Hu C, Yue JT. Hot-Carrier-Reliability Design Rules for Translating Device Degradation to CMOS Digital Circuit Degradation Ieee Transactions On Electron Devices. 41: 681-691. DOI: 10.1109/16.285017  1
1994 Tao J, Cheung NW, Hu C. An Electromigration Failure Model for Interconnects Under Pulsed and Bidirectional Current Stressing Ieee Transactions On Electron Devices. 41: 539-545. DOI: 10.1109/16.278507  1
1994 Tu R, Huang JH, Ko P, Hu C. MOSFET saturation voltage Solid-State Electronics. 37: 1445-1446. DOI: 10.1016/0038-1101(94)90204-6  0.6
1993 Duster JS, Liu ZH, Ko PK, Hu C. Temperature Effects of the Inversion Layer Electron and Hole Mobility of MOSFETs from 85K to 500K The Japan Society of Applied Physics. DOI: 10.7567/Ssdm.1993.A-4-1  0.68
1993 Tao J, Cheung NW, Hu C. Metal electromigration damage healing under bidirectional current stress Ieee Electron Device Letters. 14: 554-556. DOI: 10.1109/55.260787  0.44
1993 Assaderaghi F, Parke S, King J, Ko PK, Hu C, Chen J. High-Performance Sub-Quarter-Micrometer PMOSFET’s on SOI Ieee Electron Device Letters. 14: 298-300. DOI: 10.1109/55.215204  1
1993 Huang JH, Zhang GB, Liu ZH, Duster J, Wann SJ, Ko P, Hu C. Temperature dependence of MOSFET substrate current Ieee Electron Device Letters. 14: 268-271. DOI: 10.1109/55.215189  0.64
1993 Tao J, Cheung NW, Hu C. Electromigration characteristics of copper interconnects Ieee Electron Device Letters. 14: 249-251. DOI: 10.1109/55.215183  0.32
1993 Parke SA, Hu C, Ko PK. Bipolar-FET hybrid-mode operation of quarter-micrometer SOI MOSFETs (MESFETs read MOSFETs) Ieee Electron Device Letters. 14: 234-236. DOI: 10.1109/55.215178  0.68
1993 Parke SA, Hu C, Ko PK. A High-Performance Lateral Bipolar Transistor Fabricated on SIMOX Ieee Electron Device Letters. 14: 33-35. DOI: 10.1109/55.215091  1
1993 Tu RH, Rosenbaum E, Chan WY, Li CC, Minami E, Quader K, Keung Ko P, Hu C. Berkeley Reliability Tools-BERT Ieee Transactions On Computer-Aided Design of Integrated Circuits and Systems. 12: 1524-1534. DOI: 10.1109/43.256927  1
1993 Rosenbaum E, Liu Z, Hu C. Silicon dioxide breakdown lifetime enhancement under bipolar bias conditions Ieee Transactions On Electron Devices. 40: 2287-2295. DOI: 10.1109/16.249477  1
1993 Quader KN, Li CC, Tu R, Rosenbaum E, Ko PK, Hu C. A Bidirectional NMOSFET Current Reduction Model for Simulation of Hot-Carrier-Induced Circuit Degradation Ieee Transactions On Electron Devices. 40: 2245-2254. DOI: 10.1109/16.249472  1
1993 Liu Z-, Hu C, Huang J-, Chan T-, Jeng M-, Ko PK, Cheng YC. Threshold voltage model for deep-submicrometer MOSFETs Ieee Transactions On Electron Devices. 40: 86-95. DOI: 10.1109/16.249429  0.68
1993 Tao J, Young KK, Cheung NW, Hu C. Electromigration reliability of tungsten and aluminum vias and improvements under AC current stress Ieee Transactions On Electron Devices. 40: 1398-1405. DOI: 10.1109/16.223698  0.36
1992 Kiang MH, Tao J, Namgoong W, Hu C, Lieberman M, Cheung NW, Kang HK, Wong SS. Planarized Copper Interconnects by Selective Electroless Plating Mrs Proceedings. 265: 187. DOI: 10.1557/Proc-265-187  0.32
1992 Shin H, Hu C. Dependence of plasma-induced oxide charging current on Al antenna geometry Ieee Electron Device Letters. 13: 600-602. DOI: 10.1109/55.192857  0.32
1992 Tao J, Cheung NW, Hu C, Kang H-, Wong SS. Electromigration performance of electroless plated copper/Pd-silicide metallization Ieee Electron Device Letters. 13: 433-435. DOI: 10.1109/55.192782  0.36
1992 Hu C. IC Reliability Simulation Ieee Journal of Solid-State Circuits. 27: 241-246. DOI: 10.1109/4.121544  1
1992 Liew B-, Fang P, Cheung NW, Hu C. Circuit reliability simulator for interconnect, via, and contact electromigration Ieee Transactions On Electron Devices. 39: 2472-2479. DOI: 10.1109/16.163460  0.4
1992 Chen J, Solomon R, Chan T-, Ko PK, Hu C. Threshold voltage and C-V characteristics of SOI MOSFET's related to Si film thickness variation on SIMOX wafers Ieee Transactions On Electron Devices. 39: 2346-2353. DOI: 10.1109/16.158807  0.68
1992 Parke SA, Wann HC, Ko PK, Hu C, Moon JE. Design for Suppression of Gate-Induced Drain Leakage in LDD MOSFET’s Using a Quasi-Two-Dimensional Analytical Model Ieee Transactions On Electron Devices. 39: 1694-1703. DOI: 10.1109/16.141236  1
1992 Hu C. Simulating hot-carrier effects on circuit performance Semiconductor Science and Technology. 7. DOI: 10.1088/0268-1242/7/3B/146  1
1992 Rofan R, Churchill J, Hu C, Fong Y. Elimination of stress induced oxide leakage in textured tunneling oxide Solid-State Electronics. 35: 1843-1844. DOI: 10.1016/0038-1101(92)90272-E  0.36
1992 Hu C. The Berkeley reliability simulator BERT: an IC reliability simulator Microelectronics Journal. 23: 97-102. DOI: 10.1016/0026-2692(92)90041-X  1
1991 Liu ZH, Nee P, Ko PK, Hu C, Sodini CG, Gross BJ, Ma TP, Cheng YC. A Comparative Study of High-Field Endurance for Reoxidized-Nitrided and Fluorinated Oxides The Japan Society of Applied Physics. DOI: 10.7567/Ssdm.1991.A-2-2  0.68
1991 Fang P, Hung KK, Ko PK, Hu C. Hot-electron-induced traps studied through the random telegraph noise Ieee Electron Device Letters. 12: 273-275. DOI: 10.1109/55.82058  0.68
1991 Rosenbaum E, Hu C. High-Frequency Time-Dependent Breakdown of SiO<inf>2</inf> Ieee Electron Device Letters. 12: 267-269. DOI: 10.1109/55.82056  1
1991 Rofan R, Hu C. Stress-induced oxide leakage Ieee Electron Device Letters. 12: 632-634. DOI: 10.1109/55.119221  0.36
1991 Assaderaghi F, Chen J, Solomon R, Chian T-, Ko PK, Hu C. Transient behavior of subthreshold characteristics of fully depleted SOI MOSFETs Ieee Electron Device Letters. 12: 518-520. DOI: 10.1109/55.119175  0.68
1991 Chen J, Solomon R, Chan T-, Ko P-, Hu C. A CV technique for measuring thin SOI film thickness Ieee Electron Device Letters. 12: 453-455. DOI: 10.1109/55.119163  0.68
1991 Tao J, Young KK, Pico CA, Cheung NW, Hu C. Electromigration characteristics of tungsten plug vias under pulse and bidirectional current stressing Ieee Electron Device Letters. 12: 646-648. DOI: 10.1109/55.116942  0.36
1991 Chung JE, Chen J, Ko P-, Hu C, Levi M. The effects of low-angle off-axis substrate orientation on MOSFET performance and reliability Ieee Transactions On Electron Devices. 38: 627-633. DOI: 10.1109/16.75175  0.68
1991 George P, Ko PK, Hu C. The influence of substrate compensation on inter-electrode leakage and back-gating in GaAs MESFETs Solid-State Electronics. 34: 233-252. DOI: 10.1016/0038-1101(91)90180-7  0.68
1990 George P, Hui K, Ko PK, Hu C. The reduction of backgating in GaAs MESFETs by impact ionization Ieee Electron Device Letters. 11: 434-436. DOI: 10.1109/55.62987  0.68
1990 Moon JE, Garfinkel T, Chung J, Wong M, Ko PK, Hu C. A new LDD structure: total overlap with polysilicon spacer (TOPS) Ieee Electron Device Letters. 11: 221-223. DOI: 10.1109/55.55256  0.68
1990 Hung KK, Ko PK, Hu C, Cheng YC. Random telegraph noise of deep-submicrometer MOSFETs Ieee Electron Device Letters. 11: 90-92. DOI: 10.1109/55.46938  0.68
1990 Lee PM, Ko PK, Hu C. Relating CMOS inverter lifetime to DC hot-carrier lifetime of NMOSFETs Ieee Electron Device Letters. 11: 39-41. DOI: 10.1109/55.46924  0.68
1990 Chung JE, Jeng M-, Moon JE, Ko P-, Hu C. Low-voltage hot-electron currents and degradation in deep-submicrometer MOSFETs Ieee Transactions On Electron Devices. 37: 1651-1657. DOI: 10.1109/16.55752  0.64
1990 Hung KK, Ko PK, Hu C, Cheng YC. A unified model for the flicker noise in metal-oxide-semiconductor field-effect transistors Ieee Transactions On Electron Devices. 37: 654-665. DOI: 10.1109/16.47770  0.68
1990 Liew B-, Cheung NW, Hu C. Projecting interconnect electromigration lifetime for arbitrary current waveforms Ieee Transactions On Electron Devices. 37: 1343-1351. DOI: 10.1109/16.108197  0.32
1990 Hung KK, Ko PK, Hu C, Cheng YC. A physics-based MOSFET noise model for circuit simulators Ieee Transactions On Electron Devices. 37: 1323-1333. DOI: 10.1109/16.108195  0.68
1990 George P, Ko PK, Hu C. Model for photo-induced long-term drain current transients in GaAs MESFETs International Journal of Electronics. 68: 721-728. DOI: 10.1080/00207219008921214  0.68
1990 Zappe HP, Aronowitz S, Hu C. Oxide implantation for threshold voltage control Solid State Electronics. 33: 1447-1453. DOI: 10.1016/0038-1101(90)90119-Y  1
1989 Chen J, Chan T-, Ko PK, Hu C. Gate current in OFF-state MOSFET Ieee Electron Device Letters. 10: 203-205. DOI: 10.1109/55.31721  0.68
1989 Choi JY, Ko PK, Hu C, Scott WF. Hot-carrier-induced degradation of metal-oxide-semiconductor field-effect transistors: Oxide charge versus interface traps Journal of Applied Physics. 65: 354-360. DOI: 10.1063/1.342548  0.68
1989 Aronowitz S, Zappe HP, Hu C. Interfacial charge modification between SiO2 and silicon Applied Physics Letters. 54: 1317-1319. DOI: 10.1063/1.101400  1
1989 Ong TC, Ko PK, Hu C. Hot-carrier effects in depletion-mode MOSFETs Solid State Electronics. 32: 33-36. DOI: 10.1016/0038-1101(89)90045-2  1
1988 Lee J, Hegarty C, Hu C. Electrical characteristics of MOSFETs using low-pressure chemical-vapor-deposited oxide Ieee Electron Device Letters. 9: 324-327. DOI: 10.1109/55.732  0.32
1988 Kuo MM, Seki K, Lee PM, Choi JY, Ko PK, Hu C. Simulation of MOSFET lifetime under AC hot-electron stress Ieee Transactions On Electron Devices. 35: 1004-1011. DOI: 10.1109/16.3358  0.68
1988 Ong TC, Levi M, Ko PK, Hu C. Recovery of Threshold Voltage After Hot-Carrier Stressing Ieee Transactions On Electron Devices. 35: 978-984. DOI: 10.1109/16.3354  0.68
1988 Brassington MP, Razouk RR, Hu C. Localized interface trap generation in SILO-isolated MOSFETs during PECVD nitride passivation Ieee Transactions On Electron Devices. 35: 96-100. DOI: 10.1109/16.2421  0.32
1988 Fong Y, Wu AT, Ko PK, Hu C. Oxides grown on textured single‐crystal silicon for enhanced conduction Applied Physics Letters. 52: 1139-1141. DOI: 10.1063/1.99668  0.68
1987 Holland S, Chen IC, Hu C. Ultra-thin silicon-dioxide breakdown characteristics of MOS devices with n + and p + polysilicon gates Ieee Electron Device Letters. 8: 572-575. DOI: 10.1109/Edl.1987.26732  0.4
1987 Ong TC, Ko PK, Hu C. Modeling of Substrate Current in p-MOSFET's Ieee Electron Device Letters. 8: 413-416. DOI: 10.1109/Edl.1987.26678  1
1987 Choi JY, Ko PK, Hu C. Hot-carrier-induced MOSFET degradation under AC stress Ieee Electron Device Letters. 8: 333-335. DOI: 10.1109/Edl.1987.26650  0.68
1987 Chan TY, Wu AT, Ko PK, Hu C. Effects of the gate-to-drain/source overlap on MOSFET characteristics Ieee Electron Device Letters. 8: 326-328. DOI: 10.1109/Edl.1987.26647  0.68
1987 Tsai HH, Wu LC, Wu CY, Hu C. The Effects of Thermal Nitridation Conditions on the Reliability of Thin Nitrided Oxide Films Ieee Electron Device Letters. 8: 143-145. DOI: 10.1109/Edl.1987.26581  1
1987 Chen IC, Hu C. Accelerated testing of time-dependent breakdown of SiO 2 Ieee Electron Device Letters. 8: 140-142. DOI: 10.1109/Edl.1987.26580  0.4
1987 Chan TY, Young KK, Hu C. A true single-transistor oxide-nitride-oxide EEPROM device Ieee Electron Device Letters. 8: 93-95. DOI: 10.1109/Edl.1987.26563  0.36
1987 Choi JY, Ko PK, Hu C. Effect of oxide field on hot‐carrier‐induced degradation of metal‐oxide‐semiconductor field‐effect transistors Applied Physics Letters. 50: 1188-1190. DOI: 10.1063/1.97906  0.68
1987 Chen IC, Holland S, Hu C. Electron-trap generation by recombination of electrons and holes in SiO2 Journal of Applied Physics. 61: 4544-4548. DOI: 10.1063/1.338388  0.4
1987 Young KK, Hu C, Oldham WG. Charge transport and trapping model for scaled nitride-oxide stacked films Applied Surface Science. 30: 171-179. DOI: 10.1016/0169-4332(87)90090-0  0.36
1986 Holland S, Hu C. Correlation Between Breakdown and Process‐Induced Positive Charge Trapping in Thin Thermal SiO2 Journal of the Electrochemical Society. 133: 1705-1712. DOI: 10.1149/1.2108999  0.36
1986 Liang M, Choi JY, Ko P, Hu C. Inversion-layer capacitance and mobility of very thin gate-Oxide MOSFET's Ieee Transactions On Electron Devices. 33: 409-413. DOI: 10.1109/T-Ed.1986.22502  0.68
1986 Wu AT, Chan TY, Ko PK, Hu C. A source-side injection erasable programmable read-only-memory (SI-EPROM) device Ieee Electron Device Letters. 7: 540-542. DOI: 10.1109/Edl.1986.26465  0.68
1986 Lee J, Chen I-, Hu C. Comparison between CVD and thermal oxide dielectric integrity Ieee Electron Device Letters. 7: 506-509. DOI: 10.1109/Edl.1986.26454  0.32
1986 Feng W, Chan TY, Hu C. MOSFET drain breakdown voltage Ieee Electron Device Letters. 7: 449-450. DOI: 10.1109/Edl.1986.26432  0.32
1986 Lee J, Mayaram K, Hu C. A theoretical study of gate/Drain offset in LDD MOSFET's Ieee Electron Device Letters. 7: 152-154. DOI: 10.1109/Edl.1986.26328  0.32
1986 Chan TY, Wu AT, Ko PK, Hu C, Razouk RR. Asymmetrical characteristics in LDD and minimum-overlap MOSFET's Ieee Electron Device Letters. 7: 16-19. DOI: 10.1109/Edl.1986.26277  0.68
1986 Chen IC, Holland S, Young KK, Chang C, Hu C. Substrate hole current and oxide breakdown Applied Physics Letters. 49: 669-671. DOI: 10.1063/1.97563  0.56
1986 Kuo DS, Hu C, Sapp SP. An analytical model for the power bipolar-MOS transistor Solid-State Electronics. 29: 1229-1237. DOI: 10.1016/0038-1101(86)90128-0  0.4
1985 Chan TY, Ko PK, Hu C. Dependence of channel electric field on device scaling Ieee Electron Device Letters. 6: 551-553. DOI: 10.1109/Edl.1985.26226  0.68
1985 Chang C, Hu C, Brodersen RW. Quantum yield of electron impact ionization in silicon Journal of Applied Physics. 57: 302-309. DOI: 10.1063/1.334804  1
1984 Hu C, Chi MH, Patel VM. Optimum Design of Power MOSFET's Ieee Transactions On Electron Devices. 31: 1693-1700. DOI: 10.1109/T-Ed.1984.21773  0.36
1984 Tam S, Hu C. Hot-Electron-Induced Photon and Photocarrier Generation in Silicon MOSFET's Ieee Transactions On Electron Devices. 31: 1264-1273. DOI: 10.1109/T-Ed.1984.21698  1
1984 Liang MS, Chang C, Yeow YT, Hu C, Brodersen RW. MOSFET Degradation Due to Stressing of Thin Oxide Ieee Transactions On Electron Devices. 31: 1238-1244. DOI: 10.1109/T-Ed.1984.21694  1
1984 Ko PK, Hu C, Tam S. Lucky-Electron Model of Channel Hot-Electron Injection in MOSFET's Ieee Transactions On Electron Devices. 31: 1116-1125. DOI: 10.1109/T-Ed.1984.21674  1
1984 Chan TY, Ko PK, Hu C. A simple method to characterize substrate current in MOSFET's Ieee Electron Device Letters. 5: 505-507. DOI: 10.1109/Edl.1984.26006  0.68
1984 Terrill KW, Hu C, Ko PK. An analytical model for the channel electric field in MOSFET's with graded-drain structures Ieee Electron Device Letters. 5: 440-442. DOI: 10.1109/Edl.1984.25980  0.68
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