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Mohan V. Dunga, Ph.D. - Publications

Affiliations: 
2008 University of California, Berkeley, Berkeley, CA, United States 
Area:
Integrated Circuits (INC), Microwave and mm-Wave Circuits and Systems; Communications & Networking (COMNET); Physical Electronics (PHY); Signal Processing (SP); Applied Electromagnetics
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22 high-probability publications. We are testing a new system for linking publications to authors. You can help! If you notice any inaccuracies, please sign in and mark papers as correct or incorrect matches. If you identify any major omissions or other inaccuracies in the publication list, please let us know.

Year Citation  Score
2011 Lu DD, Dunga MV, Lin CH, Niknejad AM, Hu C. A computationally efficient compact model for fully-depleted SOI MOSFETs with independently-controlled front- and back-gates Solid-State Electronics. 62: 31-39. DOI: 10.1016/J.Sse.2010.12.015  0.675
2009 Lin CH, Dunga MV, Lu DD, Niknejad AM, Hu C. Performance-aware corner model for design for manufacturing Ieee Transactions On Electron Devices. 56: 595-600. DOI: 10.1109/Ted.2008.2011845  0.548
2009 Morshed TH, Dunga MV, Zhang J, Lu DD, Niknejad AM, Hu C. Compact modeling of flicker noise variability in small size MOSFETs Technical Digest - International Electron Devices Meeting, Iedm. 30.6.1-30.6.4. DOI: 10.1109/IEDM.2009.5424237  0.52
2008 Lin CH, Dunga MV, Lu D, Niknejad AM, Hu C. Statistical compact modeling of variations in nano MOSFETs International Symposium On Vlsi Technology, Systems, and Applications, Proceedings. 165-166. DOI: 10.1109/VTSA.2008.4530849  0.566
2008 Dunga MV, Lin CH, Niknejad AM, Hu C. BSIM-CMG: A compact model for multi-gate transistors Finfets and Other Multi-Gate Transistors. 113-153. DOI: 10.1007/978-0-387-71752-4_3  0.675
2007 Dunga MV, Lin CH, Lu DD, Xiong W, Cleavelin CR, Patruno P, Hwang JR, Yang FL, Niknejad AM, Hu C. BSIM-MG: A versatile multi-gate FET model for mixed-signal design Digest of Technical Papers - Symposium On Vlsi Technology. 60-61. DOI: 10.1109/VLSIT.2007.4339727  0.396
2007 Lu DD, Dunga MV, Lin CH, Niknejad AM, Hu C. A multi-gate MOSFET compact model featuring independent-gate operation Technical Digest - International Electron Devices Meeting, Iedm. 565-568. DOI: 10.1109/IEDM.2007.4419001  0.511
2007 Lin CH, Dunga MV, Niknejad AM, Hu C. A compact quantum-mechanical model for double-gate MOSFET Icsict-2006: 2006 8th International Conference On Solid-State and Integrated Circuit Technology, Proceedings. 1272-1274. DOI: 10.1109/ICSICT.2006.306111  0.354
2007 He J, Xi X, Wan H, Dunga M, Chan M, Niknejad AM. BSIM5: An advanced charge-based MOSFET model for nanoscale VLSI circuit simulation Solid-State Electronics. 51: 433-444. DOI: 10.1016/J.Sse.2006.12.006  0.709
2007 Hu C, Dunga M, Lin CH, Lu D, Niknejad A. Compact modeling for new transistor structures 2007 International Conference On Simulation of Semiconductor Processes and Devices, Sispad 2007. 285-288.  0.484
2007 Hu C, Lin CH, Dunga M, Lu D, Niknejad A. A versatile multi-gate MOSFET compact model: BSIM-MG 2007 Nsti Nanotechnology Conference and Trade Show - Nsti Nanotech 2007, Technical Proceedings. 3: 512-514.  0.453
2006 Dunga MV, Lin CH, Xi X, Lu DD, Niknejad AM, Hu C. Modeling advanced FET technology in a compact model Ieee Transactions On Electron Devices. 53: 1971-1977. DOI: 10.1109/Ted.2005.881001  0.664
2006 Dunga MV, Lin CH, Xi X, Chen S, Lu DD, Niknejad AM, Hu C. BSIM4 and BSIM multi-gate progress 2006 Nsti Nanotechnology Conference and Trade Show - Nsti Nanotech 2006 Technical Proceedings. 3: 658-661.  0.526
2006 Dunga MV, Xi X, Niknejad AM, Hu C. Dynamic behavior model for high-k MOSFETs 2006 Nsti Nanotechnology Conference and Trade Show - Nsti Nanotech 2006 Technical Proceedings. 3: 835-838.  0.423
2005 He J, Xi J, Chan M, Wan H, Dunga M, Heydari B, Niknejad AM, Hu C. Charge-based core and the model architecture of BSIM5 Proceedings - International Symposium On Quality Electronic Design, Isqed. 96-101. DOI: 10.1109/ISQED.2005.30  0.703
2005 Niknejad AM, Doan C, Emami S, Dunga M, Xi X, He J, Brodersen R, Hu C. Next generation CMOS compact models for RF and microwave applications Digest of Papers - Ieee Radio Frequency Integrated Circuits Symposium. 141-144.  0.321
2004 Xi X, He J, Dunga M, Lin CH, Heydari B, Wan H, Chan M, Niknejad AM, Hu C. The next generation BSIM for sub-100nm mixed-signal circuit simulation Proceedings of the Custom Integrated Circuits Conference. 13-16.  0.716
2004 Xi X, He J, Dunga M, Wau H, Chan M, Lin CH, Heydari B, Niknejad AM, Hu C. BSIM5 MOSFET model International Conference On Solid-State and Integrated Circuits Technology Proceedings, Icsict. 2: 920-923.  0.705
2004 Xi X, He J, Dunga M, Lin CH, Heydari B, Wan H, Chan M, Niknejad AM, Hu C. The development of the next generation BSIM for sub-100nm mixed-signal circuit simulation 2004 Nsti Nanotechnology Conference and Trade Show - Nsti Nanotech 2004. 2: 70-73.  0.733
2003 Chan M, Xi X, He J, Cao KM, Dunga MV, Niknejad AM, Ko PK, Hu C. Practical compact modeling approaches and options for sub-0.1 μm CMOS technologies Microelectronics Reliability. 43: 399-404. DOI: 10.1016/S0026-2714(02)00278-0  0.654
2003 Niknejad AM, Chan M, Hu C, Brodersen B, Xi X, He J, Emami S, Doan C, Cao Y, Su P, Wan H, Dunga M, Lin CH. Compact modeling for RF and microwave integrated circuits 2003 Nanotechnology Conference and Trade Show - Nanotech 2003. 2: 294-297.  0.523
2003 Dunga MV, Xi X, He J, Polishchuk I, Lu Q, Chan M, Niknejad AM, Hu C. Modeling of direct tunneling current in multi-layer gate stacks 2003 Nanotechnology Conference and Trade Show - Nanotech 2003. 2: 306-309.  0.321
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