| Year |
Citation |
Score |
| 2024 |
Na JH, Park JH, Park W, Feng J, Eun JS, Lee J, Lee SH, Jang J, Kang IM, Kim DK, Bae JH. Dependence of Positive Bias Stress Instability on Threshold Voltage and Its Origin in Solution-Processed Aluminum-Doped Indium Oxide Thin-Film Transistors. Nanomaterials (Basel, Switzerland). 14. PMID 38470795 DOI: 10.3390/nano14050466 |
0.31 |
|
| 2023 |
Kim HI, Lee T, Cho Y, Lee S, Lee WY, Kim K, Jang J. Sol-Gel-Processed YO-AlO Mixed Oxide-Based Resistive Random-Access-Memory Devices. Nanomaterials (Basel, Switzerland). 13. PMID 37686969 DOI: 10.3390/nano13172462 |
0.315 |
|
| 2022 |
Hwang YJ, Kim DK, Jeon SH, Wang Z, Park J, Lee SH, Jang J, Kang IM, Bae JH. Importance of Structural Relaxation on the Electrical Characteristics and Bias Stability of Solution-Processed ZnSnO Thin-Film Transistors. Nanomaterials (Basel, Switzerland). 12. PMID 36144885 DOI: 10.3390/nano12183097 |
0.326 |
|
| 2022 |
Kim DW, Kim HJ, Lee WY, Kim K, Lee SH, Bae JH, Kang IM, Kim K, Jang J. Enhanced Switching Reliability of Sol-Gel-Processed YO RRAM Devices Based on YO Surface Roughness-Induced Local Electric Field. Materials (Basel, Switzerland). 15. PMID 35269170 DOI: 10.3390/ma15051943 |
0.338 |
|
| 2022 |
Kim HJ, Kim DW, Lee WY, Kim K, Lee SH, Bae JH, Kang IM, Kim K, Jang J. Flexible Sol-Gel-Processed YO RRAM Devices Obtained via UV/Ozone-Assisted Photochemical Annealing Process. Materials (Basel, Switzerland). 15. PMID 35269129 DOI: 10.3390/ma15051899 |
0.348 |
|
| 2020 |
Lee SH, Cho MS, Jung JH, Jang WD, Mun HJ, Jang J, Bae JH, Kang IM. Analysis of CMOS Logic Inverter Based on Gate-All-Around Field-Effect Transistors with the Strained-Silicon Layer for Improving the Switching Performances. Journal of Nanoscience and Nanotechnology. 20: 6632-6637. PMID 32604487 DOI: 10.1166/Jnn.2020.18768 |
0.352 |
|
| 2020 |
Mun HJ, Cho MS, Jung JH, Jang WD, Lee SH, Jang J, Bae JH, Kang IM. Analysis of Logic Inverter Based on Polycrystalline Silicon with Single Grain Boundary. Journal of Nanoscience and Nanotechnology. 20: 6616-6621. PMID 32604484 DOI: 10.1166/Jnn.2020.18769 |
0.365 |
|
| 2020 |
Jang WD, Yoon YJ, Cho MS, Jung JH, Lee SH, Jang J, Bae JH, Kang IM. Design and Analysis of Metal-Oxide-Semiconductor Field-Effect Transistor-Based Capacitorless One-Transistor Embedded Dynamic Random-Access Memory with Double-Polysilicon Layer Using Grain Boundary for Hole Storage. Journal of Nanoscience and Nanotechnology. 20: 6596-6602. PMID 32604481 DOI: 10.1166/Jnn.2020.18767 |
0.364 |
|
| 2020 |
Park JI, Jeong HS, Vincent P, Park J, Kim DK, Jang J, Kang IM, Kim H, Kim YH, Lang P, Bae JH. Effect of High-Speed Blade Coating on Electrical Characteristics in Polymer Based Transistors. Journal of Nanoscience and Nanotechnology. 20: 5486-5490. PMID 32331122 DOI: 10.1166/Jnn.2020.17615 |
0.326 |
|
| 2020 |
Jung JH, Cho MS, Jang WD, Lee SH, Jang J, Bae JH, Kang IM. Recessed-Gate GaN Metal-Insulator-Semiconductor High-Electron-Mobility Transistor Using a Dual Gate-Insulator Employing TiO₂/SiN. Journal of Nanoscience and Nanotechnology. 20: 4678-4683. PMID 32126640 DOI: 10.1166/Jnn.2020.17809 |
0.408 |
|
| 2020 |
Jang WD, Yoon YJ, Cho MS, Jung JH, Lee SH, Jang J, Bae J, Kang IM. Polycrystalline silicon metal-oxide-semiconductor field-effect transistor-based stacked multi-layer one-transistor dynamic random-access memory with double-gate structure for the embedded systems Japanese Journal of Applied Physics. 59: SGGB01. DOI: 10.7567/1347-4065/Ab65D2 |
0.405 |
|
| 2020 |
Kim K, Jang J. Polarization-Charge Inversion at Al2O3/GaN Interfaces through Post-Deposition Annealing Electronics. 9: 1068. DOI: 10.3390/Electronics9071068 |
0.305 |
|
| 2020 |
Lee W, Lee H, Ha S, Lee C, Bae J, Kang I, Kim K, Jang J. Effect of Mg Doping on the Electrical Performance of a Sol-Gel-Processed SnO2 Thin-Film Transistor Electronics. 9: 523. DOI: 10.3390/Electronics9030523 |
0.432 |
|
| 2020 |
Lee C, Lee W, Lee H, Ha S, Bae J, Kang I, Kang H, Kim K, Jang J. Sol-Gel Processed Yttrium-Doped SnO2 Thin Film Transistors Electronics. 9: 254. DOI: 10.3390/Electronics9020254 |
0.412 |
|
| 2020 |
Park J, Kim D, Park J, Kang IM, Jang J, Kim H, Lang P, Bae J. Numerical Analysis on Effective Mass and Traps Density Dependence of Electrical Characteristics of a-IGZO Thin-Film Transistors Electronics. 9: 119. DOI: 10.3390/Electronics9010119 |
0.341 |
|
| 2020 |
Jang B, Kang H, Lee W, Bae J, Kang I, Kim K, Kwon H, Jang J. Enhancement Mode Flexible SnO 2 Thin Film Transistors Via a UV/Ozone-Assisted Sol-Gel Approach Ieee Access. 8: 123013-123018. DOI: 10.1109/Access.2020.3007372 |
0.45 |
|
| 2020 |
Park J, Kim D, Lee H, Jang J, Park J, Kim H, Lang P, Kang IM, Bae J. High performance of solution-processed SnO2 thin-film transistors by promotion of photo-exposure time-dependent carrier transport during the pre-annealing stage Semiconductor Science and Technology. 35: 65019. DOI: 10.1088/1361-6641/Ab8537 |
0.341 |
|
| 2020 |
Kim D, Park J, Jang J, Kang IM, Park J, Bae J. Expeditious and eco-friendly solution-free self-patterning of sol–gel oxide semiconductor thin films Materials & Design. 194: 108949. DOI: 10.1016/J.Matdes.2020.108949 |
0.342 |
|
| 2020 |
Kim JY, Vincent P, Jang J, Jang MS, Choi M, Bae J, Lee C, Kim H. Versatile use of ZnO interlayer in hybrid solar cells for self-powered near infra-red photo-detecting application Journal of Alloys and Compounds. 813: 152202. DOI: 10.1016/J.Jallcom.2019.152202 |
0.327 |
|
| 2020 |
Kim K, Jang J. Improving Ni/GaN Schottky diode performance through interfacial passivation layer formed via ultraviolet/ozone treatment Current Applied Physics. 20: 293-297. DOI: 10.1016/J.Cap.2019.11.017 |
0.321 |
|
| 2020 |
Kim D, Vincent P, Jang J, Kang IM, Kim H, Lang P, Choi M, Bae J. Contact line curvature-induced molecular misorientation of a surface energy patterned organic semiconductor in meniscus-guided coating Applied Surface Science. 504: 144362. DOI: 10.1016/J.Apsusc.2019.144362 |
0.36 |
|
| 2020 |
Jung JH, Cho MS, Jang WD, Lee SH, Jang J, Bae J, Yoon YJ, Kang IM. Fabrication of AlGaN/GaN MISHEMT with dual-metal gate electrode and its performances Applied Physics A. 126. DOI: 10.1007/S00339-020-3453-4 |
0.378 |
|
| 2019 |
Jang WD, Yoon YJ, Cho MS, Jung JH, Lee SH, Jang J, Bae JH, Kang IM. Design and Optimization of Germanium-Based Gate-Metal-Core Vertical Nanowire Tunnel FET. Micromachines. 10. PMID 31683726 DOI: 10.3390/Mi10110749 |
0.358 |
|
| 2019 |
Vincent P, Shim JW, Jang J, Kang IM, Lang P, Bae J, Kim H. The Crucial Role of Quaternary Mixtures of Active Layer in Organic Indoor Solar Cells Energies. 12: 1838. DOI: 10.3390/En12101838 |
0.301 |
|
| 2019 |
Lee H, Ha S, Bae J, Kang I, Kim K, Lee W, Jang J. Effect of Annealing Ambient on SnO2 Thin Film Transistors Fabricated via An Ethanol-based Sol-gel Route Electronics. 8: 955. DOI: 10.3390/Electronics8090955 |
0.452 |
|
| 2019 |
Ha S, Lee H, Lee W, Jang B, Kwon H, Kim K, Jang J. Effect of Annealing Environment on the Performance of Sol–Gel-Processed ZrO2 RRAM Electronics. 8: 947. DOI: 10.3390/Electronics8090947 |
0.437 |
|
| 2019 |
Kwon H, Baik S, Jang J, Jang J, Kim S, Grigoropoulos C, Kwon H. Ultra-Short Pulsed Laser Annealing Effects on MoS2 Transistors with Asymmetric and Symmetric Contacts Electronics. 8: 222. DOI: 10.3390/Electronics8020222 |
0.352 |
|
| 2019 |
Lee W, Ha SH, Lee H, Bae J, Jang B, Kwon H, Jang J. Densification Control as a Method of Improving the Ambient Stability of Sol–Gel-Processed SnO2 Thin-Film Transistors Ieee Electron Device Letters. 40: 905-908. DOI: 10.1109/Led.2019.2910286 |
0.44 |
|
| 2018 |
Liu Y, Shin I, Ma Y, Hwang IW, Jung YK, Jang JW, Jeong JH, Park SH, Kim KH. Bulk Heterojunction-Assisted Grain Growth for Controllable and Highly Crystalline Perovskite Film. Acs Applied Materials & Interfaces. PMID 30152673 DOI: 10.1021/acsami.8b09758 |
0.312 |
|
| 2018 |
Kim T, Jang B, Lee S, Lee W, Jang J. Improved Negative Bias Stress Stability of Sol-Gel-Processed Mg-Doped In2O3 Thin Film Transistors Ieee Electron Device Letters. 39: 1872-1875. DOI: 10.1109/Led.2018.2873622 |
0.416 |
|
| 2018 |
Jang B, Kim T, Lee S, Lee W, Jang J. Schottky Nature of Au/SnO2 Ultrathin Film Diode Fabricated Using Sol–Gel Process Ieee Electron Device Letters. 39: 1732-1735. DOI: 10.1109/Led.2018.2871211 |
0.421 |
|
| 2018 |
Jang B, Kim T, Lee S, Lee W, Kang H, Cho CS, Jang J. High Performance Ultrathin SnO2 Thin-Film Transistors by Sol–Gel Method Ieee Electron Device Letters. 39: 1179-1182. DOI: 10.1109/Led.2018.2849689 |
0.465 |
|
| 2018 |
Lee S, Kim T, Jang B, Lee W, Song KC, Kim HS, Do GY, Hwang SB, Chung S, Jang J. Impact of Device Area and Film Thickness on Performance of Sol-Gel Processed ZrO2RRAM Ieee Electron Device Letters. 39: 668-671. DOI: 10.1109/Led.2018.2820141 |
0.46 |
|
| 2018 |
Lee S, Lee W, Jang B, Kim T, Bae J, Cho K, Kim S, Jang J. Sol-Gel Processed p-Type CuO Phototransistor for a Near-Infrared Sensor Ieee Electron Device Letters. 39: 47-50. DOI: 10.1109/Led.2017.2779816 |
0.442 |
|
| 2017 |
Liu Y, Shin I, Hwang IW, Kim S, Lee J, Yang MS, Jung YK, Jang JW, Jeong JH, Park SH, Kim KH. Single-crystal-like perovskite for high-performance solar cells using effective merged annealing method. Acs Applied Materials & Interfaces. PMID 28345853 DOI: 10.1021/Acsami.6B16541 |
0.313 |
|
| 2017 |
Smith J, Chung S, Jang J, Biaou C, Subramanian V. Solution-Processed Complementary Resistive Switching Arrays for Associative Memory Ieee Transactions On Electron Devices. 64: 4310-4316. DOI: 10.1109/Ted.2017.2732920 |
0.58 |
|
| 2017 |
Kim T, Jang B, Bae J, Park H, Cho CS, Kwon H, Jang J. Improvement in the Performance of Sol–Gel Processed In2O3Thin-Film Transistor Depending on Sb Dopant Concentration Ieee Electron Device Letters. 38: 1027-1030. DOI: 10.1109/Led.2017.2715374 |
0.413 |
|
| 2017 |
Yun Y, Choi A, Hahm SG, Chung JW, Lee YU, Jung JY, Kim J, Park J, Lee S, Jang J. Enhanced Performance of Thiophene-Rich Heteroacene, Dibenzothiopheno [6,5-b:6’,5’-f] Thieno[3,2-b]Thiophene Thin-Film Transistor With MoOxHole Injection Layers Ieee Electron Device Letters. 38: 649-652. DOI: 10.1109/Led.2017.2687941 |
0.412 |
|
| 2017 |
Jang J, Subramanian V. Effect of electrode material on resistive switching memory behavior of solution-processed resistive switches: Realization of robust multi-level cells Thin Solid Films. 625: 87-92. DOI: 10.1016/J.Tsf.2017.01.063 |
0.555 |
|
| 2016 |
Kwon HJ, Chung S, Jang J, Grigoropoulos CP. Laser direct writing and inkjet printing for a sub-2 μm channel length MoS2 transistor with high-resolution electrodes. Nanotechnology. 27: 405301. PMID 27576743 DOI: 10.1088/0957-4484/27/40/405301 |
0.394 |
|
| 2016 |
Kwon HJ, Jang J, Grigoropoulos CP. Laser direct writing process for making electrodes and high-k sol-gel ZrO2 for boosting performances of MoS2 transistors. Acs Applied Materials & Interfaces. PMID 27011225 DOI: 10.1021/Acsami.5B11357 |
0.429 |
|
| 2016 |
Jang J, Chung S, Kang H, Subramanian V. P-type CuO and Cu2O transistors derived from a sol-gel copper (II) acetate monohydrate precursor Thin Solid Films. 600: 157-161. DOI: 10.1016/J.Tsf.2016.01.036 |
0.573 |
|
| 2015 |
Scheideler WJ, Jang J, Karim MA, Kitsomboonloha R, Zeumault A, Subramanian V. Gravure-Printed Sol-Gels on Flexible Glass: A Scalable Route to Additively Patterned Transparent Conductors. Acs Applied Materials & Interfaces. 7: 12679-87. PMID 26018206 DOI: 10.1021/Acsami.5B00183 |
0.596 |
|
| 2015 |
Lee O, You L, Jang J, Subramanian V, Salahuddin S. Flexible spin-orbit torque devices Applied Physics Letters. 107. DOI: 10.1063/1.4936934 |
0.551 |
|
| 2015 |
Kwon HJ, Kim S, Jang J, Grigoropoulos CP. Evaluation of pulsed laser annealing for flexible multilayer MoS2 transistors Applied Physics Letters. 106. DOI: 10.1063/1.4916131 |
0.427 |
|
| 2015 |
Jang J, Kang H, Chakravarthula HCN, Subramanian V. Fully Inkjet-Printed Transparent Oxide Thin Film Transistors Using a Fugitive Wettability Switch Advanced Electronic Materials. 1: 1500086. DOI: 10.1002/Aelm.201500086 |
0.572 |
|
| 2015 |
Subramanian V, Jang J, Scheideler W, Swisher S. Printed inorganic transistors based on transparent oxides Digest of Technical Papers - Sid International Symposium. 46: 587-590. |
0.517 |
|
| 2014 |
Kwon HJ, Jang J, Kim S, Subramanian V, Grigoropoulos CP. Electrical characteristics of multilayer MoS2 transistors at real operating temperatures with different ambient conditions Applied Physics Letters. 105. DOI: 10.1063/1.4898584 |
0.526 |
|
| 2014 |
Kwon HJ, Kang H, Jang J, Kim S, Grigoropoulos CP. Analysis of flicker noise in two-dimensional multilayer MoS2 transistors Applied Physics Letters. 104. DOI: 10.1063/1.4866785 |
0.302 |
|
| 2014 |
Kang H, Kitsomboonloha R, Ulmer K, Stecker L, Grau G, Jang J, Subramanian V. Megahertz-class printed high mobility organic thin-film transistors and inverters on plastic using attoliter-scale high-speed gravure-printed sub-5 μm gate electrodes Organic Electronics: Physics, Materials, Applications. 15: 3639-3647. DOI: 10.1016/J.Orgel.2014.10.005 |
0.591 |
|
| 2014 |
Jang J, Kitsomboonloha R, Swisher SL, Park ES, Kang H, Subramanian V. Erratum: Transparent high-performance thin film transistors from solution-processed SnO2/ZrO2 gel-like precursors (Advanced Materials (2013) 25 (1042-1047) DOI: 10.1002/adma.201202997) Advanced Materials. 26. DOI: 10.1002/Adma.201402185 |
0.58 |
|
| 2013 |
Jang J, Cho K, Yun J, Kim S. Nanocrystal-based complementary inverters constructed on flexible plastic substrates. Journal of Nanoscience and Nanotechnology. 13: 3597-601. PMID 23858910 DOI: 10.1166/Jnn.2013.7324 |
0.392 |
|
| 2013 |
Jang J, Kitsomboonloha R, Swisher SL, Park ES, Kang H, Subramanian V. Transparent high-performance thin film transistors from solution-processed SnO2 /ZrO2 gel-like precursors. Advanced Materials (Deerfield Beach, Fla.). 25: 1042-7. PMID 23161491 DOI: 10.1002/Adma.201202997 |
0.618 |
|
| 2012 |
Jang J, Pan F, Braam K, Subramanian V. Resistance switching characteristics of solid electrolyte chalcogenide Ag(2)Se nanoparticles for flexible nonvolatile memory applications. Advanced Materials (Deerfield Beach, Fla.). 24: 3573-6. PMID 22688973 DOI: 10.1002/Adma.201200671 |
0.549 |
|
| 2012 |
Kang H, Kitsomboonloha R, Jang J, Subramanian V. High-performance printed transistors realized using femtoliter gravure-printed sub-10 μm metallic nanoparticle patterns and highly uniform polymer dielectric and semiconductor layers. Advanced Materials (Deerfield Beach, Fla.). 24: 3065-9. PMID 22570314 DOI: 10.1002/Adma.201200924 |
0.547 |
|
| 2012 |
Pan F, Jang J, Subramanian V. A very reliable multilevel YSZ resistive switching memory Device Research Conference - Conference Digest, Drc. 217-218. DOI: 10.1109/DRC.2012.6257024 |
0.492 |
|
| 2012 |
Swisher SL, Volkman S, Braam K, Jang J, Subramanian V. High performance solution-processed thin-film transistors based on In 2O 3 nanocrystals Device Research Conference - Conference Digest, Drc. 241-242. DOI: 10.1109/DRC.2012.6256991 |
0.563 |
|
| 2011 |
Jang J, Kitsomboonloha R, Subramanian V. A new candidate for high performance transparent electronic circuits: Sol-gel based SnO 2/ZrO 2 thin film transistors Technical Digest - International Electron Devices Meeting, Iedm. 14.7.1-14.7.3. DOI: 10.1109/IEDM.2011.6131555 |
0.595 |
|
| 2010 |
Jang J, Cho K, Byun K, Hong WS, Kim S. Optoelectronic characteristics of HgSe nanoparticle films spin-coated on flexible plastic substrates Japanese Journal of Applied Physics. 49. DOI: 10.1143/Jjap.49.030210 |
0.365 |
|
| 2009 |
Jang J, Cho K, Yun J, Kim S. N-channel thin-film transistors constructed on plastic by solution processes of HgSe nanocrystals Microelectronic Engineering. 86: 2030-2033. DOI: 10.1016/J.Mee.2009.01.027 |
0.432 |
|
| 2008 |
Yeom D, Kang J, Lee M, Jang J, Yun J, Jeong DY, Yoon C, Koo J, Kim S. ZnO nanowire-based nano-floating gate memory with Pt nanocrystals embedded in Al(2)O(3) gate oxides. Nanotechnology. 19: 395204. PMID 21832589 DOI: 10.1088/0957-4484/19/39/395204 |
0.385 |
|
| 2008 |
Jang J, Cho K, Lee SH, Kim S. Transparent and flexible thin-film transistors with channel layers composed of sintered HgTe nanocrystals. Nanotechnology. 19: 015204. PMID 21730526 DOI: 10.1088/0957-4484/19/01/015204 |
0.436 |
|
| 2008 |
Kim DW, Jang J, Kim H, Cho K, Kim S. Electrical characteristics of HgTe nanocrystal-based thin film transistors fabricated on flexible plastic substrates Thin Solid Films. 516: 7715-7719. DOI: 10.1016/J.Tsf.2008.04.044 |
0.454 |
|
| 2008 |
Jang J, Cho K, Lee SH, Kim S. Synthesis and electrical characteristics of Ag2S nanocrystals Materials Letters. 62: 1438-1440. DOI: 10.1016/J.Matlet.2007.08.080 |
0.376 |
|
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