Year |
Citation |
Score |
2020 |
Svensson S, Sarney W, Beck WA, Liu J, Donetski D, Suchalkin S, Belenky G, Kyrtsos A, Bellotti E. P-doping with Beryllium of long-wavelength InAsSb Semiconductor Science and Technology. DOI: 10.1088/1361-6641/Abb7C0 |
0.481 |
|
2008 |
Dashiell MW, Ehsani H, Sander PC, Newman FD, Wang CA, Shellenbarger ZA, Donetski D, Gu N, Anikeev S. Triple-axis X-ray reciprocal space mapping of InyGa1-yAs thermophotovoltaic diodes grown on (1 0 0) InP substrates Solar Energy Materials and Solar Cells. 92: 1003-1010. DOI: 10.1016/j.solmat.2008.02.042 |
0.572 |
|
2006 |
Dashiell MW, Beausang JF, Ehsani H, Nichols GJ, Depoy DM, Danielson LR, Talamo P, Rahner KD, Brown EJ, Burger SR, Fourspring PM, Topper WF, Baldasaro PF, Wang CA, Huang RK, ... ... Donetski D, et al. Quaternary InGaAsSb thermophotovoltaic diodes Ieee Transactions On Electron Devices. 53: 2879-2888. DOI: 10.1109/Ted.2006.885087 |
0.584 |
|
2002 |
Suchalkin S, Westerfeld D, Donetski D, Martinelli R, Vurgaftman I, Meyer J, Luryi S, Belenky G. Optical gain and loss in 3 μm diode "W" lasers Proceedings of Spie - the International Society For Optical Engineering. 4651: 185-192. DOI: 10.1117/12.467946 |
0.609 |
|
2002 |
Suchalkin S, Westerfeld D, Donetski D, Luryi S, Belenky G, Martinelli R, Vurgaftman I, Meyer J. Optical gain and loss in 3 μm diode "w" quantum-well lasers Applied Physics Letters. 80: 2833-2835. DOI: 10.1063/1.1471571 |
0.628 |
|
1994 |
Vorobjev LE, Danilov SN, Donetski DV, Firsov DA, Kochegarov YV. Narrowband tunable semiconductor noninjection FIR hot hole laser and its use for investigations of semiconductors Conference Proceedings - Lasers and Electro-Optics Society Annual Meeting. 8. |
0.332 |
|
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