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Takashi Hosoda, Ph.D. - Publications

Affiliations: 
2011 Electrical Engineering Stony Brook University, Stony Brook, NY, United States 
Area:
Optoelectronic device and systems; Semiconductor devices, physics and technology.
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73 high-probability publications. We are testing a new system for linking publications to authors. You can help! If you notice any inaccuracies, please sign in and mark papers as correct or incorrect matches. If you identify any major omissions or other inaccuracies in the publication list, please let us know.

Year Citation  Score
2020 Feng T, Shterengas L, Hosoda T, Kipshidze G, Belyanin A, Teng CC, Westberg J, Wysocki G, Belenky G. Passively Mode-Locked 2.7 and 3.2 μm GaSb-Based Cascade Diode Lasers Journal of Lightwave Technology. 38: 1895-1899. DOI: 10.1109/Jlt.2020.2971605  0.836
2020 Jiang J, Shterengas L, Hosoda T, Stein A, Belyanin A, Kipshidze G, Belenky G. Dual wavelength operation of the GaSb-based Y-branch distributed Bragg reflector lasers near 2.1 μm Semiconductor Science and Technology. 35: 025016. DOI: 10.1088/1361-6641/Ab63Bc  0.801
2020 Liu R, Shterengas L, Stein A, Kipshidze G, Jiang J, Hosoda T, Belenky G. GaSb-based heterostructure with buried vacuum pocket photonic crystal layer Electronics Letters. 56: 388-390. DOI: 10.1049/El.2019.3710  0.722
2018 Wang M, Hosoda T, Jiang J, Shterengas L, Kipshidze G, Stein A, Feng T, Belenky G. External cavity type-I quantum well cascade diode lasers with a tuning range of 440  nm near 3  μm. Optics Letters. 43: 4473-4476. PMID 30211893 DOI: 10.1364/Ol.43.004473  0.834
2018 Ermolaev M, Lin Y, Shterengas L, Hosoda T, Kipshidze G, Suchalkin S, Belenky G. GaSb-Based Type-I Quantum Well 3–3.5- $\mu$ m Cascade Light Emitting Diodes Ieee Photonics Technology Letters. 30: 869-872. DOI: 10.1109/Lpt.2018.2822621  0.785
2018 Jiang J, Shterengas L, Hosoda T, Belyanin A, Kipshidze G, Belenky G. GaSb-based diode lasers with asymmetric coupled quantum wells Applied Physics Letters. 113: 071106. DOI: 10.1063/1.5046426  0.779
2018 Feng T, Shterengas L, Hosoda T, Belyanin A, Kipshidze G. Passive Mode-Locking of 3.25 μm GaSb-Based Cascade Diode Lasers Acs Photonics. 5: 4978-4985. DOI: 10.1021/Acsphotonics.8B01215  0.787
2017 Feng T, Hosoda T, Shterengas L, Kipshidze G, Stein A, Lu M, Belenky G. Laterally coupled distributed feedback type-I quantum well cascade diode lasers emitting near 3.22  μm. Applied Optics. 56: H74-H80. PMID 29091669 DOI: 10.1364/Ao.56.000H74  0.864
2017 Shterengas L, Hosoda T, Wang M, Feng T, Kipshidze G, Belenky G. High-power 1.9-3.3-μm type-I quantum-well cascade diode lasers Proceedings of Spie. 10123. DOI: 10.1117/12.2251229  0.859
2017 Wang M, Hosoda T, Shterengas L, Kipshidze G, Lu M, Stein A, Belenky G. External cavity cascade diode lasers tunable from 3.05 to 3.25  μm Optical Engineering. 57: 1. DOI: 10.1117/1.Oe.57.1.011012  0.859
2017 Feng T, Hosoda T, Shterengas L, Stein A, Kipshidze G, Belenky G. Two-Step Narrow Ridge Cascade Diode Lasers Emitting Near $2~\mu$ m Ieee Photonics Technology Letters. 29: 485-488. DOI: 10.1109/Lpt.2016.2647442  0.808
2017 Shterengas L, Kipshidze G, Hosoda T, Liang R, Feng T, Wang M, Stein A, Belenky G. Cascade Pumping of 1.9–3.3 μm Type-I Quantum Well GaSb-Based Diode Lasers Ieee Journal of Selected Topics in Quantum Electronics. 23: 1-8. DOI: 10.1109/Jstqe.2017.2687763  0.875
2017 Wang M, Hosoda T, Shterengas L, Kipshidze G, Hwang D, Belenky G. Narrow ridge GaSb-based cascade diode lasers fabricated by methane–hydrogen reactive ion etching Electronics Letters. 53: 40-42. DOI: 10.1049/El.2016.3394  0.817
2016 Shterengas L, Kipshidze G, Hosoda T, Wang M, Feng T, Belenky G. Cascade Type-I Quantum Well GaSb-Based Diode Lasers Photonics. 3: 27. DOI: 10.3390/Photonics3020027  0.876
2016 Fradet M, Hosoda T, Frez C, Shterengas L, Sander S, Forouhar S, Belenky G. First demonstration of single-mode distributed feedback type-I GaSb cascade diode laser emitting near 2.9 μm Proceedings of Spie. 9767. DOI: 10.1117/12.2213224  0.859
2016 Shterengas L, Hosoda T, Wang M, Feng T, Kipshidze G, Belenky G. Type-I QW cascade diode lasers for spectral region above 3 μm Proceedings of Spie. 9767: 976703. DOI: 10.1117/12.2208933  0.87
2016 Arikawa Y, Fujioka S, Morace A, Zhang Z, Nagai T, Taga M, Abe Y, Kojima S, Sakata S, Inoue H, Utsugi M, Hattori S, Lee SH, Ikenouchi T, Hosoda T, et al. The diagnostics of the energy coupling efficiency in the Fast Ignition integrated experiment Journal of Physics: Conference Series. 688. DOI: 10.1088/1742-6596/688/1/012004  0.314
2016 Hosoda T, Feng T, Shterengas L, Kipshidze G, Belenky G. High power cascade diode lasers emitting near 2 μm Applied Physics Letters. 108. DOI: 10.1063/1.4944553  0.842
2016 Hosoda T, Sander S, Frez C, Belenky G, Fradet M, Shterengas L, Forouhar S. Laterally coupled distributed feedback cascade diode lasers emitting near 2.9 µm Electronics Letters. 52: 857-859. DOI: 10.1049/El.2016.0115  0.837
2015 Fujioka S, Johzaki T, Arikawa Y, Zhang Z, Morace A, Ikenouchi T, Ozaki T, Nagai T, Abe Y, Kojima S, Sakata S, Inoue H, Utsugi M, Hattori S, Hosoda T, et al. Heating efficiency evaluation with mimicking plasma conditions of integrated fast-ignition experiment. Physical Review. E, Statistical, Nonlinear, and Soft Matter Physics. 91: 063102. PMID 26172803 DOI: 10.1103/PhysRevE.91.063102  0.304
2015 Shterengas L, Liang R, Hosoda T, Kipshidze G, Belenky G, Bowman SS, Tober RL. Type-I QW cascade diode lasers with 830 mW of CW power at 3 μm Proceedings of Spie - the International Society For Optical Engineering. 9382. DOI: 10.1117/12.2076631  0.835
2015 Liang R, Hosoda T, Shterengas L, Stein A, Lu M, Kipshidze G, Belenky G. Narrow Ridge λ 3-μm Cascade Diode Lasers with Output Power above 100 mW at Room Temperature Ieee Photonics Technology Letters. 27: 2425-2428. DOI: 10.1109/Lpt.2015.2464704  0.873
2015 Matsukuma H, Sunahara A, Yanagida T, Tomuro H, Kouge K, Kodama T, Hosoda T, Fujioka S, Nishimura H. Correlation between laser absorption and radiation conversion efficiency in laser produced tin plasma Applied Physics Letters. 107. DOI: 10.1063/1.4931698  0.459
2015 Hosoda T, Wang M, Shterengas L, Kipshidze G, Belenky G. Three stage cascade diode lasers generating 500 mW near 3.2 μ m Applied Physics Letters. 107. DOI: 10.1063/1.4931356  0.852
2015 Lin Y, Suchalkin S, Kipshidze G, Hosoda T, Laikhtman B, Westerfeld D, Shterengas L, Belenky G. Effect of hole transport on performance of infrared type-II superlattice light emitting diodes Journal of Applied Physics. 117. DOI: 10.1063/1.4919070  0.79
2014 Liang R, Shterengas L, Kipshidze G, Hosoda T, Suchalkin S, Belenky G. Novel cascade diode lasers based on type-I quantum wells International Journal of High Speed Electronics and Systems. 23. DOI: 10.1142/S0129156414500220  0.869
2014 Shterengas L, Liang R, Kipshidze G, Hosoda T, Suchalkin S, Belenky G. Cascade pumping of GaSb-based type-I quantum well diode lasers Proceedings of Spie - the International Society For Optical Engineering. 9002. DOI: 10.1117/12.2038429  0.87
2014 Liang R, Kipshidze G, Hosoda T, Shterengas L, Belenky G. 3.3-3.4-μm Diode lasers based on triple-layer GaInAsSb quantum wells Ieee Photonics Technology Letters. 26: 664-666. DOI: 10.1109/Lpt.2014.2302835  0.858
2014 Liang R, Shterengas L, Hosoda T, Stein A, Lu M, Kipshidze G, Belenky G. Diffraction limited 3.15 μm cascade diode lasers Semiconductor Science and Technology. 29. DOI: 10.1088/0268-1242/29/11/115016  0.858
2014 Shterengas L, Liang R, Kipshidze G, Hosoda T, Belenky G, Bowman SS, Tober RL. Cascade type-I quantum well diode lasers emitting 960 mW near 3 μ m Applied Physics Letters. 105. DOI: 10.1063/1.4900506  0.85
2014 Liang R, Hosoda T, Shterengas L, Stein A, Lu M, Kipshidze G, Belenky G. Distributed feedback 3.27 μm diode lasers with continuous-wave output power above 15 mW at room temperature Electronics Letters. 50: 1378-1380. DOI: 10.1049/El.2014.2733  0.836
2013 Belenky G, Shterengas L, Kisin MV, Hosoda T. Gallium antimonide (GaSb)-based type-I quantum well diode lasers: Recent development and prospects Semiconductor Lasers: Fundamentals and Applications. 441-486. DOI: 10.1533/9780857096401.3.441  0.815
2013 Liang R, Hosoda T, Kipshidze G, Shterengas L, Belenky G. GaSb-based diode lasers with asymmetric separate confinement heterostructure Ieee Photonics Technology Letters. 25: 925-928. DOI: 10.1109/Lpt.2013.2256118  0.844
2013 Shterengas L, Liang R, Kipshidze G, Hosoda T, Suchalkin S, Belenky G. Type-I quantum well cascade diode lasers emitting near 3 μm Applied Physics Letters. 103. DOI: 10.1063/1.4821992  0.871
2013 Suchalkin S, Belenky G, Hosoda T, Jung S, Belkin MA. Distributed feedback quantum cascade laser with optically tunable emission frequency Applied Physics Letters. 103. DOI: 10.1063/1.4816592  0.858
2013 Hosoda T, Liang R, Kipshidze G, Shterengas L, Belenky G. Room temperature operated diffraction limited λ ≈3 μm diode lasers with 37 mW of continuous-wave output power Electronics Letters. 49: 671-672. DOI: 10.1049/El.2013.0804  0.863
2013 Liang R, Hosoda T, Kipshidze G, Shterengas L, Belenky G. 3 μm GaSb-based type-I quantum-well diode lasers with cascade pumping scheme Cleo: Science and Innovations, Cleo_si 2013. CM2K.5.  0.803
2013 Liang R, Hosoda T, Kipshidze G, Shterengas L, Belenky G. 3 μm GaSb-based type-I quantum-well diode lasers with cascade pumping scheme Cleo: Science and Innovations, Cleo_si 2013. CM2K.5.  0.846
2012 Semyonov OG, Subashiev AV, Shabalov A, Lifshitz N, Chen Z, Hosoda T, Luryi S. Reflectance reduction of InP wafers after high-temperature annealing. Applied Optics. 51: 5425-31. PMID 22859031 DOI: 10.1364/Ao.51.005425  0.353
2012 Vorobjev LE, Firsov DA, Vinnichenko MY, Zerova VL, Melentyev GA, Mashko MO, Shterengas L, Kipshidze G, Belenky G, Hosoda T. Influence of Auger recombination on the lifetime of nonequilibrium carriers in InGaAsSb/AlGaAsSb quantum well structures Bulletin of the Russian Academy of Sciences: Physics. 76: 211-213. DOI: 10.3103/S1062873812020104  0.692
2012 Shterengas L, Kipshidze G, Hosoda T, Liang R, Jung S, Westerfeld D, Belenky G. Diode lasers operating in spectral range from 1.9 to 3.5 μm Conference Digest - Ieee International Semiconductor Laser Conference. 24-25. DOI: 10.1109/ISLC.2012.6348309  0.892
2012 Hosoda T, Wang D, Kipshidze G, Sarney WL, Shterengas L, Belenky G. 3 m diode lasers grown on (Al)GaInSb compositionally graded metamorphic buffer layers Semiconductor Science and Technology. 27. DOI: 10.1088/0268-1242/27/5/055011  0.824
2011 Hosoda T, Chen J, Tsvid G, Westerfeld D, Liang R, Kipshidze G, Shterengas L, Belenky G. Progress in development of room temperature CW GaSb based diode lasers for 2-3.5 μm spectral region International Journal of High Speed Electronics and Systems. 20: 43-49. DOI: 10.1142/S0129156411006386  0.884
2011 Tsvid G, Hosoda T, Chen J, Kipshidze G, Shterengas L, Frez C, Soibel A, Forouhar S, Belenky G. Type-I GaSb based single lateral mode diode ridge lasers operating at room temperature in 3.1 - 3.2 μm spectral region Proceedings of Spie - the International Society For Optical Engineering. 7953. DOI: 10.1117/12.875307  0.84
2011 Forouhar S, Frez C, Franz KJ, Ksendzov A, Qiu Y, Soibel KA, Chen J, Hosoda T, Kipshidze G, Shterengas L, Belenky G. Low power consumption lasers for next generation miniature optical spectrometers for trace gas analysis Proceedings of Spie - the International Society For Optical Engineering. 7945. DOI: 10.1117/12.871565  0.852
2011 Kipshidze G, Hosoda T, Sarney WL, Shterengas L, Belenky G. High-power 2.2-μm diode lasers with metamorphic arsenic-free heterostructures Ieee Photonics Technology Letters. 23: 317-319. DOI: 10.1109/Lpt.2010.2103053  0.814
2011 Belenky G, Shterengas L, Kipshidze G, Hosoda T. Type-i diode lasers for spectral region above 3 μm Ieee Journal On Selected Topics in Quantum Electronics. 17: 1426-1434. DOI: 10.1109/Jstqe.2011.2128300  0.87
2011 Hosoda T, Kipshidze G, Shterengas L, Belenky G. Single spatial mode 3μm diode lasers with continuous-wave output power of 15mW at room temperature Electronics Letters. 47: 1341-1343. DOI: 10.1049/El.2011.3268  0.834
2010 Vorob'ev LE, Zerova VL, Firsov DA, Belenky G, Shterengas L, Kipshidze G, Hosoda T, Suchalkin S, Kisinb M. Charge carrier recombination mechanisms in sb-containing quantum well laser structures Bulletin of the Russian Academy of Sciences: Physics. 74: 69-71. DOI: 10.3103/S1062873810010181  0.755
2010 Vorobjev LE, Vinnichenko MY, Firsov DA, Zerova VL, Panevin VY, Sofronov AN, Thumrongsilapa P, Ustinov VM, Zhukov AE, Vasiljev AP, Shterengas L, Kipshidze G, Hosoda T, Belenky G. Carrier heating in quantum wells under optical and current injection of electron-hole pairs Semiconductors. 44: 1402-1405. DOI: 10.1134/S1063782610110047  0.728
2010 Firsov DA, Shterengas L, Kipshidze G, Zerova VL, Hosoda T, Thumrongsilapa P, Vorobjev LE, Belenky G. Dynamics of photoluminescence and recombination processes in Sb-containing laser nanostructures Semiconductors. 44: 50-58. DOI: 10.1134/S1063782610010082  0.79
2010 Chen J, Hosoda T, Tsvid G, Liang R, Westerfeld D, Kipshidze G, Shterengas L, Belenky G. Type-I GaSb based diode lasers operating at room temperature in 2 to 3.5 μm spectral region Proceedings of Spie - the International Society For Optical Engineering. 7686. DOI: 10.1117/12.852208  0.884
2010 Hosoda T, Kipshidze G, Tsvid G, Shterengas L, Belenky G. Type-I GaSb-based laser diodes operating in 3.1- to 3.3-μ wavelength range Ieee Photonics Technology Letters. 22: 718-720. DOI: 10.1109/Lpt.2010.2044659  0.859
2010 Chen J, Hosoda T, Kipshidze G, Shterengas L, Belenky G, Soibel A, Frez C, Forouhar S. Single spatial mode room temperature operated 3.15m diode lasers Electronics Letters. 46: 367-368. DOI: 10.1049/El.2010.2894  0.849
2010 Hosoda T, Kipshidze G, Shterengas L, Belenky G. Diode lasers emitting near 3.44m in continuous-wave regime at 300K Electronics Letters. 46: 1455-1457. DOI: 10.1049/El.2010.2564  0.846
2010 Shterengas L, Kipshidze G, Hosoda T, Belenky G. GaSb-based Type-I Laser Diodes Operating at 3 μm and Beyond Future Trends in Microelectronics: From Nanophotonics to Sensors and Energy. 65-73. DOI: 10.1002/9780470649343.ch5  0.806
2010 Soibel A, Frez C, Ksendzov A, Qiu Y, Forouhar S, Chen J, Hosoda T, Kipshidze G, Shterengas L, Tsvid G, Belenky G. 3.2 μm single spatial mode diode lasers operating at room temperature Optics Infobase Conference Papers.  0.791
2010 Soibel A, Frez C, Ksendzov A, Qiu Y, Forouhar S, Chen J, Hosoda T, Kipshidze G, Shterengas L, Tsvid G, Belenky G. 3.2 μm single spatial mode diode lasers operating at room temperature Optics Infobase Conference Papers.  0.836
2010 Forouhar S, Soibel A, Frez C, Qiu Y, Chen J, Hosoda T, Kipshidze G, Shterengas L, Tsvid G, Belenky G, Franz KJ, Gmachl C, Scherer B. Low power consumption lasers for next generation miniature optical spectrometers for major constituent and trace gas analysis 40th International Conference On Environmental Systems, Ices 2010.  0.745
2009 Chen J, Kipshidze G, Shterengas L, Hosoda T, Wang Y, Donetsky D, Belenky G. 2.7-μm GaSb-based diode lasers with quinary waveguide Ieee Photonics Technology Letters. 21: 1112-1114. DOI: 10.1109/Lpt.2009.2023224  0.86
2009 Hosoda T, Kipshidze G, Shterengas L, Suchalkin S, Belenky G. 200 mW type i GaSb-based laser diodes operating at 3 μm: Role of waveguide width Applied Physics Letters. 94. DOI: 10.1063/1.3159819  0.852
2009 Shterengas L, Kipshidze G, Hosoda T, Chen J, Belenky G. Diode lasers emitting at 3m with 300mW of continuous-wave output power Electronics Letters. 45: 942-943. DOI: 10.1049/El.2009.1827  0.844
2009 Belenky G, Shterengas L, Kipshidze G, Hosoda T, Chen J, Suchalkin S. GaSb-based laser diodes operating within spectral range of 2 - 3.5 μm 2009 Conference On Lasers and Electro-Optics and 2009 Conference On Quantum Electronics and Laser Science Conference, Cleo/Qels 2009.  0.816
2009 Belenky G, Shterengas L, Kipshidze G, Hosoda T, Chen J, Suchalkin S. GaSb-based laser diodes operating within spectral range of 2-3.5 μm Optics Infobase Conference Papers.  0.817
2008 Belenky G, Donetsky D, Shterengas L, Hosoda T, Chen J, Kipshidze G, Kisin M, Westerfeld D. Interband GaSb-based laser diodes for spectral regions of 2.3-2.4 μm and 3-3.1 μm with improved room-temperature performance Proceedings of Spie - the International Society For Optical Engineering. 6900. DOI: 10.1117/12.754713  0.887
2008 Belenky G, Shterengas L, Kipshidze G, Hosoda T, Suchalkin S. Advances in the development of the GaSb-based laser diodes operating within spectral range of 2 - 3.5 μm Conference Proceedings - Lasers and Electro-Optics Society Annual Meeting-Leos. 856-857. DOI: 10.1109/LEOS.2008.4688891  0.804
2008 Suchalkin S, Jung S, Kipshidze G, Shterengas L, Hosoda T, Westerfeld D, Snyder D, Belenky G. GaSb based light emitting diodes with strained InGaAsSb type i quantum well active regions Applied Physics Letters. 93. DOI: 10.1063/1.2974795  0.821
2008 Shterengas L, Belenky G, Hosoda T, Kipshidze G, Suchalkin S. Continuous wave operation of diode lasers at 3.36 μm at 12 °c Applied Physics Letters. 93. DOI: 10.1063/1.2953210  0.851
2008 Shterengas L, Belenky G, Kipshidze G, Hosoda T. Room temperature operated 3.1 μm type-I GaSb-based diode lasers with 80 mW continuous-wave output power Applied Physics Letters. 92. DOI: 10.1063/1.2919720  0.823
2008 Shterengas L, Kipshidze G, Hosoda T, Donetsky D, Belenky G. Room temperature operated 3.1-μm type-I GaSb-based diode lasers with 80mW continuous wave output power 2008 Conference On Quantum Electronics and Laser Science Conference On Lasers and Electro-Optics, Cleo/Qels. DOI: 10.1063/1.2919720  0.838
2008 Hosoda T, Belenky G, Shterengas L, Kipshidze G, Kisin MV. Continuous-wave room temperature operated 3.0 μm type i GaSb-based lasers with quinternary AlInGaAsSb barriers Applied Physics Letters. 92. DOI: 10.1063/1.2890053  0.857
2007 Donetsky D, Kipshidze G, Shterengas L, Hosoda T, Belenky G. 2.3m type-I quantum well GaInAsSb/AlGaAsSb/GaSb laser diodes with quasi-CW output power of 1.4W Electronics Letters. 43: 810-812. DOI: 10.1049/El:20071320  0.825
1999 Sakata Y, Hosoda T, Sasaki Y, Kitamura S, Yamamoto M, Inomoto Y, Komatsu K. All-selective MOVPE-grown 1.3-μm strained multi-quantum-well buried-heterostructure laser diodes Ieee Journal of Quantum Electronics. 35: 368-376. DOI: 10.1109/3.748842  0.516
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