Year |
Citation |
Score |
2011 |
Guzman J, Boswell-Koller CN, Beeman JW, Bustillo KC, Conry T, Dubón OD, Hansen WL, Levander AX, Liao CY, Lieten RR, Sawyer CA, Sherburne MP, Shin SJ, Stone PR, Watanabe M, et al. Reversible phase changes in Ge-Au nanoparticles Applied Physics Letters. 98. DOI: 10.1063/1.3584850 |
0.732 |
|
2010 |
Shin SJ, Guzman J, Yuan CW, Liao CY, Boswell-Koller CN, Stone PR, Dubon OD, Minor AM, Watanabe M, Beeman JW, Yu KM, Ager JW, Chrzan DC, Haller EE. Embedded binary eutectic alloy nanostructures: a new class of phase change materials. Nano Letters. 10: 2794-8. PMID 20698591 DOI: 10.1021/Nl100670R |
0.718 |
|
2010 |
Yuan CW, Yi DO, Sharp ID, Shin SJ, Liao CY, Guzman J, Ager JW, Haller EE, Chrzan DC. My modeling nanocluster formation during ion beam synthesis Materials Research Society Symposium Proceedings. 1181: 87-92. DOI: 10.1557/Proc-1181-Dd04-02 |
0.745 |
|
2009 |
Bracht H, Schneider S, Klug JN, Liao CY, Lundsgaard Hansen J, Haller EE, Nylandsted Larsen A, Bougeard D, Posselt M, Wündisch C. Interstitial-mediated diffusion in germanium under proton irradiation. Physical Review Letters. 103: 255501. PMID 20366261 DOI: 10.1103/Physrevlett.103.255501 |
0.348 |
|
2009 |
Yuan CW, Yi DO, Sharp ID, Shin SJ, Liao CY, Guzman J, Ager JW, Haller EE, Chrzan DC. Theory of nanocluster size distributions from ion beam synthesis. Physical Review Letters. 102: 146101. PMID 19392456 DOI: 10.1103/Physrevlett.102.146101 |
0.757 |
|
2009 |
Shin SJ, Guzman J, Yuan CW, Liao CY, Stone PR, Dubon OD, Minor AM, Watanabe M, Ager JW, Chrzan DC, Haller EE. Structural characterization of GeSn alloy nanocrystals embedded in SiO 2 Materials Research Society Symposium Proceedings. 1184: 157-161. DOI: 10.1557/Proc-1184-Hh04-08 |
0.746 |
|
2009 |
Yuan CW, Yi DO, Sharp ID, Shin SJ, Liao CY, Guzman J, Ager JW, Haller EE, Chrzan DC. Size-distribution evolution of ion-beam-synthesized nanoclusters in silica Physical Review B - Condensed Matter and Materials Physics. 80. DOI: 10.1103/Physrevb.80.134121 |
0.771 |
|
2009 |
Guzman J, Shin SJ, Liao CY, Yuan CW, Stone PR, Dubón OD, Yu KM, Beeman JW, Watanabe M, Ager JW, Chrzan DC, Haller EE. Photoluminescence enhancement of Er-doped silica containing Ge nanoclusters Applied Physics Letters. 95. DOI: 10.1063/1.3266846 |
0.734 |
|
2009 |
Yuan CW, Boswell CN, Shin SJ, Liao CY, Guzman J, Ager JW, Haller EE, Chrzan DC. Processing route for size distribution narrowing of ion beam synthesized nanoclusters Applied Physics Letters. 95. DOI: 10.1063/1.3211193 |
0.76 |
|
2008 |
Yi DO, Jhon MH, Sharp ID, Xu Q, Yuan CW, Liao CY, Ager JW, Haller EE, Chrzan DC. Modeling nucleation and growth of encapsulated nanocrystals: Kinetic Monte Carlo simulations and rate theory Physical Review B - Condensed Matter and Materials Physics. 78. DOI: 10.1103/Physrevb.78.245415 |
0.481 |
|
2008 |
Yuan CW, Shin SJ, Liao CY, Guzman J, Stone PR, Watanabe M, Ager JW, Haller EE, Chrzan DC. Structure map for embedded binary alloy nanocrystals Applied Physics Letters. 93. DOI: 10.1063/1.3027066 |
0.742 |
|
2007 |
Xu Q, Sharp ID, Yuan CW, Yi DO, Liao CY, Glaeser AM, Minor AM, Beeman JW, Ridgway MC, Kluth P, Ager JW, Chrzan DC, Haller EE. Xu et al. Reply Physical Review Letters. 99. DOI: 10.1103/Physrevlett.99.079602 |
0.356 |
|
2007 |
Xu Q, Sharp ID, Yuan CW, Yi DO, Liao CY, Glaeser AM, Minor AM, Beeman JW, Ridgway MC, Kluth P, III JWA, Chrzan DC, Haller EE. Superheating and supercooling of Ge nanocrystals embedded in SiO 2 Journal of Physics: Conference Series. 61: 1042-1046. DOI: 10.1088/1742-6596/61/1/206 |
0.471 |
|
2006 |
Xu Q, Sharp ID, Yuan CW, Yi DO, Liao CY, Glaeser AM, Minor AM, Beeman JW, Ridgway MC, Kluth P, Ager JW, Chrzan DC, Haller EE. Large melting-point hysteresis of Ge nanocrystals embedded in SiO2. Physical Review Letters. 97: 155701. PMID 17155336 DOI: 10.1103/Physrevlett.97.155701 |
0.485 |
|
2006 |
Xu Q, Sharp ID, Yuan CW, Yi DO, Liao CY, Glaeser AM, Minor AM, Beeman JW, Ridgway MC, Kluth P, Ager JW, Chrzan DC, Haller EE. Publisher’s Note: Large Melting-Point Hysteresis of Ge Nanocrystals Embedded inSiO2[Phys. Rev. Lett.97, 155701 (2006)] Physical Review Letters. 97. DOI: 10.1103/Physrevlett.97.209902 |
0.461 |
|
2005 |
Sharp ID, Xu Q, Yi DO, Liao CY, Ager JW, Beeman JW, Yu KM, Robinson JT, Dubón OD, Chrzan DC, Haller EE. A chemical approach to 3-D lithographic patterning of Si and Ge nanocrystals Materials Research Society Symposium Proceedings. 901: 429-434. DOI: 10.1557/Proc-0901-Rb09-03 |
0.615 |
|
2005 |
Ager JW, Beeman JW, Hansen WL, Haller EE, Sharp ID, Liao C, Yang A, Thewalt MLW, Riemann H. High-purity, isotopically enriched bulk silicon Journal of the Electrochemical Society. 152: G448-G451. DOI: 10.1149/1.1901674 |
0.344 |
|
2005 |
Tsoi S, Alawadhi H, Lu X, Ager JW, Liao CY, Riemann H, Haller EE, Rodriguez S, Ramdas AK. Erratum: Electron-phonon renormalization of electronic band gaps of semiconductors: Isotopically enriched silicon [Phys. Rev. B70, 193201 (2004)] Physical Review B. 72. DOI: 10.1103/Physrevb.72.249905 |
0.408 |
|
2005 |
Sharp ID, Xu Q, Yi DO, Liao CY, Beeman JW, Liliental-Weber Z, Yu KM, Zakharov DN, Ager JW, Chrzan DC, Haller EE. In situ characterization of Ge nanocrystals near the growth temperature Aip Conference Proceedings. 772: 611-612. DOI: 10.1063/1.1994255 |
0.44 |
|
2005 |
Tsoi S, Alawadhi H, Lu X, Ager JW, Liao CY, Riemann H, Haller EE, Rodriguez S, Ramdas AK. Isotopic effects in the indirect excitonic transitions of isotopically enriched silicon Aip Conference Proceedings. 772: 73-74. DOI: 10.1063/1.1994000 |
0.334 |
|
2005 |
Sharp ID, Xu Q, Liao CY, Yi DO, Beeman JW, Liliental-Weber Z, Yu KM, Zakharov DN, Ager JW, Chrzan DC, Haller EE. Stable, freestanding Ge nanocrystals Journal of Applied Physics. 97. DOI: 10.1063/1.1942629 |
0.543 |
|
2005 |
Sharp ID, Yi DO, Xu Q, Liao CY, Beeman JW, Liliental-Weber Z, Yu KM, Zakharov DN, Ager JW, Chrzan DC, Haller EE. Mechanism of stress relaxation in Ge nanocrystals embedded in Si O2 Applied Physics Letters. 86: 1-3. DOI: 10.1063/1.1856132 |
0.495 |
|
2005 |
Xu Q, Sharp ID, Liao CY, Yi DO, Ager JW, Beeman JW, Yu KM, Chrzan DC, Haller EE. Germanium nanocrystals embedded in sapphire Materials Research Society Symposium Proceedings. 880: 115-120. |
0.37 |
|
2004 |
Yi DO, Sharp ID, Xu Q, Liao CY, Ager JW, Beeman JW, Liliental-Weber Z, Yu KM, Zakharov D, Haller EE, Chrzan DC. Modeling the stress evolution of ion beam synthesized nanocrystals Materials Research Society Symposium Proceedings. 821: 31-36. DOI: 10.1557/Proc-821-P8.16 |
0.385 |
|
2004 |
Tsoi S, Alawadhi H, Lu X, Ager JW, Liao CY, Riemann H, Haller EE, Rodriguez S, Ramdas AK. Electron-phonon renormalization of electronic band gaps of semiconductors: Isotopically enriched silicon Physical Review B - Condensed Matter and Materials Physics. 70: 1-4. DOI: 10.1103/Physrevb.70.193201 |
0.441 |
|
2004 |
Sharp ID, Xu Q, Liao CY, Yi DO, Ager JW, Beeman JW, Yu KM, Zakharov DN, Liliental-Weber Z, Chrzan DC, Haller EE. Characterization and manipulation of exposed Ge nanocrystals Materials Research Society Symposium Proceedings. 818: 391-396. |
0.301 |
|
2004 |
Xu Q, Sharp ID, Liao CY, Yi DO, Ager JW, Beeman JW, Liliental-Weber Z, Yu KM, Zakharov D, Chrzan DC, Haller EE. Transmission electron microscopy (TEM) studies of Ge nanocrystals Materials Research Society Symposium Proceedings. 818: 277-282. |
0.307 |
|
2003 |
Sharp ID, Xu Q, Liao CY, Ager JW, Beeman JW, Yu KM, Zakharov D, Liliental-Weber Z, Haller EE. Liberation of Ion Implanted Ge Nanocrystals from a Silicon Dioxide Matrix via Hydrofluoric Acid Vapor Etching Materials Research Society Symposium - Proceedings. 777: 33-38. |
0.309 |
|
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