Stephen A. Lyon - Publications

Affiliations: 
Electrical Engineering Princeton University, Princeton, NJ 
Area:
Applied Physics,Photonics,Quantum Information

185 high-probability publications. We are testing a new system for linking publications to authors. You can help! If you notice any inaccuracies, please sign in and mark papers as correct or incorrect matches. If you identify any major omissions or other inaccuracies in the publication list, please let us know.

Year Citation  Score
2018 Rose BC, Huang D, Zhang ZH, Stevenson P, Tyryshkin AM, Sangtawesin S, Srinivasan S, Loudin L, Markham ML, Edmonds AM, Twitchen DJ, Lyon SA, de Leon NP. Observation of an environmentally insensitive solid-state spin defect in diamond. Science (New York, N.Y.). 361: 60-63. PMID 29976820 DOI: 10.1126/science.aao0290  0.6
2017 Sigillito AJ, Tyryshkin AM, Schenkel T, Houck AA, Lyon SA. All-electric control of donor nuclear spin qubits in silicon. Nature Nanotechnology. PMID 28805818 DOI: 10.1038/nnano.2017.154  0.6
2016 Petersen ES, Tyryshkin AM, Morton JJL, Abe E, Tojo S, Itoh KM, Thewalt MLW, Lyon SA. Nuclear spin decoherence of neutral P 31 donors in silicon: Effect of environmental Si 29 nuclei Physical Review B - Condensed Matter and Materials Physics. 93. DOI: 10.1103/PhysRevB.93.161202  0.6
2016 Yasukawa T, Sigillito AJ, Rose BC, Tyryshkin AM, Lyon SA. Addressing spin transitions on Bi 209 donors in silicon using circularly polarized microwaves Physical Review B - Condensed Matter and Materials Physics. 93. DOI: 10.1103/PhysRevB.93.121306  1
2016 Pica G, Lovett BW, Bhatt RN, Schenkel T, Lyon SA. Surface code architecture for donors and dots in silicon with imprecise and nonuniform qubit couplings Physical Review B - Condensed Matter and Materials Physics. 93. DOI: 10.1103/PhysRevB.93.035306  0.36
2015 Lo CC, Urdampilleta M, Ross P, Gonzalez-Zalba MF, Mansir J, Lyon SA, Thewalt ML, Morton JJ. Hybrid optical-electrical detection of donor electron spins with bound excitons in silicon. Nature Materials. 14: 490-4. PMID 25799326 DOI: 10.1038/nmat4250  1
2015 Sigillito AJ, Jock RM, Tyryshkin AM, Beeman JW, Haller EE, Itoh KM, Lyon SA. Electron Spin Coherence of Shallow Donors in Natural and Isotopically Enriched Germanium Physical Review Letters. 115. DOI: 10.1103/PhysRevLett.115.247601  0.6
2015 Sigillito AJ, Tyryshkin AM, Lyon SA. Anisotropic stark effect and electric-field noise suppression for phosphorus donor qubits in silicon Physical Review Letters. 114. DOI: 10.1103/PhysRevLett.114.217601  1
2015 Lo Nardo R, Wolfowicz G, Simmons S, Tyryshkin AM, Riemann H, Abrosimov NV, Becker P, Pohl HJ, Steger M, Lyon SA, Thewalt MLW, Morton JJL. Spin relaxation and donor-acceptor recombination of Se+ in 28-silicon Physical Review B - Condensed Matter and Materials Physics. 92. DOI: 10.1103/PhysRevB.92.165201  0.6
2015 Shankar S, Tyryshkin AM, Lyon SA. ESR measurements of phosphorus dimers in isotopically enriched Si 28 silicon Physical Review B - Condensed Matter and Materials Physics. 91. DOI: 10.1103/PhysRevB.91.245206  1
2014 Pica G, Wolfowicz G, Urdampilleta M, Thewalt MLW, Riemann H, Abrosimov NV, Becker P, Pohl HJ, Morton JJL, Bhatt RN, Lyon SA, Lovett BW. Hyperfine Stark effect of shallow donors in silicon Physical Review B - Condensed Matter and Materials Physics. 90. DOI: 10.1103/PhysRevB.90.195204  1
2014 Sekiguchi T, Tyryshkin AM, Tojo S, Abe E, Mori R, Riemann H, Abrosimov NV, Becker P, Pohl HJ, Ager JW, Haller EE, Thewalt MLW, Morton JJL, Lyon SA, Itoh KM. Host isotope mass effects on the hyperfine interaction of group-V donors in silicon Physical Review B - Condensed Matter and Materials Physics. 90. DOI: 10.1103/PhysRevB.90.121203  1
2014 Pica G, Lovett BW, Bhatt RN, Lyon SA. Exchange coupling between silicon donors: The crucial role of the central cell and mass anisotropy Physical Review B - Condensed Matter and Materials Physics. 89. DOI: 10.1103/PhysRevB.89.235306  1
2014 Takita M, Lyon SA. Isolating electrons on superfluid helium Journal of Physics: Conference Series. 568. DOI: 10.1088/1742-6596/568/5/052034  1
2014 Sigillito AJ, Malissa H, Tyryshkin AM, Riemann H, Abrosimov NV, Becker P, Pohl HJ, Thewalt MLW, Itoh KM, Morton JJL, Houck AA, Schuster DI, Lyon SA. Fast, low-power manipulation of spin ensembles in superconducting microresonators Applied Physics Letters. 104. DOI: 10.1063/1.4881613  1
2014 Lo CC, Simmons S, Lo Nardo R, Weis CD, Tyryshkin AM, Meijer J, Rogalla D, Lyon SA, Bokor J, Schenkel T, Morton JJL. Stark shift and field ionization of arsenic donors in 28Si- silicon-on-insulator structures Applied Physics Letters. 104. DOI: 10.1063/1.4876175  1
2013 Wolfowicz G, Tyryshkin AM, George RE, Riemann H, Abrosimov NV, Becker P, Pohl HJ, Thewalt ML, Lyon SA, Morton JJ. Atomic clock transitions in silicon-based spin qubits. Nature Nanotechnology. 8: 561-4. PMID 23793304 DOI: 10.1038/nnano.2013.117  1
2013 Malissa H, Schuster DI, Tyryshkin AM, Houck AA, Lyon SA. Superconducting coplanar waveguide resonators for low temperature pulsed electron spin resonance spectroscopy. The Review of Scientific Instruments. 84: 025116. PMID 23464260 DOI: 10.1063/1.4792205  1
2012 Tyryshkin AM, Tojo S, Morton JJ, Riemann H, Abrosimov NV, Becker P, Pohl HJ, Schenkel T, Thewalt ML, Itoh KM, Lyon SA. Electron spin coherence exceeding seconds in high-purity silicon. Nature Materials. 11: 143-7. PMID 22138791 DOI: 10.1038/nmat3182  1
2012 Lyon SA, Tyryshkin AM, He J, Jock RM. Spin coherence in Si and applications to quantum information processing Ecs Transactions. 50: 647-654. DOI: 10.1149/05009.0647ecst  1
2012 Wolfowicz G, Simmons S, Tyryshkin AM, George RE, Riemann H, Abrosimov NV, Becker P, Pohl HJ, Lyon SA, Thewalt MLW, Morton JJL. Decoherence mechanisms of 209Bi donor electron spins in isotopically pure 28Si Physical Review B - Condensed Matter and Materials Physics. 86. DOI: 10.1103/PhysRevB.86.245301  1
2012 Havlicek M, Jantsch W, Wilamowski Z, Yanagi K, Kataura H, Rümmeli MH, Malissa H, Tyryshkin A, Lyon S, Chernov A, Kuzmany H. Indirect exchange interaction in fully metal-semiconductor separated single-walled carbon nanotubes revealed by electron spin resonance Physical Review B - Condensed Matter and Materials Physics. 86. DOI: 10.1103/PhysRevB.86.045402  1
2012 Wang ZH, Zhang W, Tyryshkin AM, Lyon SA, Ager JW, Haller EE, Dobrovitski VV. Effect of pulse error accumulation on dynamical decoupling of the electron spins of phosphorus donors in silicon Physical Review B - Condensed Matter and Materials Physics. 85. DOI: 10.1103/PhysRevB.85.085206  1
2012 Takita M, Bradbury FR, Gurrieri TM, Wilkel KJ, Eng K, Carroll MS, Lyon SA. Spatial distribution of electrons on a superfluid helium charge-coupled device Journal of Physics: Conference Series. 400. DOI: 10.1088/1742-6596/400/4/042059  1
2012 Weis CD, Lo CC, Lang V, Tyryshkin AM, George RE, Yu KM, Bokor J, Lyon SA, Morton JJL, Schenkel T. Electrical activation and electron spin resonance measurements of implanted bismuth in isotopically enriched silicon-28 Applied Physics Letters. 100. DOI: 10.1063/1.4704561  1
2012 Lo CC, Bradbury FR, Tyryshkin AM, Weis CD, Bokor J, Schenkel T, Lyon SA. Suppression of microwave rectification effects in electrically detected magnetic resonance measurements Applied Physics Letters. 100. DOI: 10.1063/1.3684247  1
2012 Jock RM, Shankar S, Tyryshkin AM, He J, Eng K, Childs KD, Tracy LA, Lilly MP, Carroll MS, Lyon SA. Probing band-tail states in silicon metal-oxide-semiconductor heterostructures with electron spin resonance Applied Physics Letters. 100. DOI: 10.1063/1.3675862  1
2011 Bradbury FR, Takita M, Gurrieri TM, Wilkel KJ, Eng K, Carroll MS, Lyon SA. Efficient clocked electron transfer on superfluid helium. Physical Review Letters. 107: 266803. PMID 22243176 DOI: 10.1103/PhysRevLett.107.266803  1
2011 Morton JJ, McCamey DR, Eriksson MA, Lyon SA. Embracing the quantum limit in silicon computing. Nature. 479: 345-53. PMID 22094695 DOI: 10.1038/nature10681  1
2011 Lo CC, Lang V, George RE, Morton JJ, Tyryshkin AM, Lyon SA, Bokor J, Schenkel T. Electrically detected magnetic resonance of neutral donors interacting with a two-dimensional electron gas. Physical Review Letters. 106: 207601. PMID 21668263 DOI: 10.1103/PhysRevLett.106.207601  1
2011 Brown RM, Tyryshkin AM, Porfyrakis K, Gauger EM, Lovett BW, Ardavan A, Lyon SA, Briggs GA, Morton JJ. Coherent state transfer between an electron and nuclear spin in (15)N@C(60). Physical Review Letters. 106: 110504. PMID 21469852 DOI: 10.1103/PhysRevLett.106.110504  1
2011 Lang V, Lo CC, George RE, Lyon SA, Bokor J, Schenkel T, Ardavan A, Morton JJ. Electrically detected magnetic resonance in a W-band microwave cavity. The Review of Scientific Instruments. 82: 034704. PMID 21456773 DOI: 10.1063/1.3557395  1
2011 Passmore BS, Adams DC, Ribaudo T, Wasserman D, Lyon S, Davids P, Chow WW, Shaner EA. Observation of Rabi splitting from surface plasmon coupled conduction state transitions in electrically excited InAs quantum dots. Nano Letters. 11: 338-42. PMID 21214167 DOI: 10.1021/nl102412h  1
2010 Schuster DI, Fragner A, Dykman MI, Lyon SA, Schoelkopf RJ. Proposal for manipulating and detecting spin and orbital States of trapped electrons on helium using cavity quantum electrodynamics. Physical Review Letters. 105: 040503. PMID 20867827 DOI: 10.1103/PhysRevLett.105.040503  1
2010 Shaner EA, Passmore BS, Adams D, Ribaudo T, Lyon SA, Chow W, Wasserman D. Mid-infrared surface plasmon coupled emitters utilizing intersublevel transitions in InAs quantum dots Proceedings of Spie - the International Society For Optical Engineering. 7756. DOI: 10.1117/12.861060  1
2010 Ribaudo T, Passmore BS, Adams DC, Qian X, Vangala S, Goodhue WD, Shaner EA, Lyon SA, Wasserman D. Mid-infrared emitters utilizing intersublevel transitions in self assembled InAs quantum dots Proceedings of Spie - the International Society For Optical Engineering. 7616. DOI: 10.1117/12.843033  1
2010 Shankar S, Tyryshkin AM, He J, Lyon SA. Spin relaxation and coherence times for electrons at the Si/SiO2 interface Physical Review B - Condensed Matter and Materials Physics. 82. DOI: 10.1103/PhysRevB.82.195323  1
2010 Abe E, Tyryshkin AM, Tojo S, Morton JJL, Witzel WM, Fujimoto A, Ager JW, Haller EE, Isoya J, Lyon SA, Thewalt MLW, Itoh KM. Electron spin coherence of phosphorus donors in silicon: Effect of environmental nuclei Physical Review B - Condensed Matter and Materials Physics. 82. DOI: 10.1103/PhysRevB.82.121201  1
2010 Tezuka H, Stegner AR, Tyryshkin AM, Shankar S, Thewalt MLW, Lyon SA, Itoh KM, Brandt MS. Electron paramagnetic resonance of boron acceptors in isotopically purified silicon Physical Review B - Condensed Matter and Materials Physics. 81. DOI: 10.1103/PhysRevB.81.161203  1
2010 Shankar S, Sabouret G, Lyon SA. A low power photoemission source for electrons on liquid helium Journal of Low Temperature Physics. 161: 410-416. DOI: 10.1007/s10909-010-0204-5  1
2010 Passmore B, Adams D, Ribaudo T, Wasserman D, Lyon S, Shaner E. Mid-infrared electroluminescence from surface plasmon coupled InAs quantum dots Materials Research Society Symposium Proceedings. 1208: 184-188.  1
2009 Wasserman D, Ribaudo T, Lyon SA, Lyo SK, Shaner EA. Room temperature midinfrared electroluminescence from InAs quantum dots Applied Physics Letters. 94. DOI: 10.1063/1.3080688  1
2008 Lu TM, Sun L, Tsui DC, Lyon S, Pan W, Mühlberger M, Schäffler F, Liu J, Xie YH. In-plane field magnetoresistivity of Si two-dimensional electron gas in Si/SiGe quantum wells at 20 mK Physical Review B - Condensed Matter and Materials Physics. 78. DOI: 10.1103/PhysRevB.78.233309  1
2008 Yang A, Steger M, Lian HJ, Thewalt MLW, Uemura M, Sagara A, Itoh KM, Haller EE, Ager JW, Lyon SA, Konuma M, Cardona M. High-resolution photoluminescence measurement of the isotopic-mass dependence of the lattice parameter of silicon Physical Review B - Condensed Matter and Materials Physics. 77. DOI: 10.1103/PhysRevB.77.113203  1
2008 Chi E, Lyon SA, Martonosi M. Deterministic error model for quantum computer simulation Physical Review a - Atomic, Molecular, and Optical Physics. 77. DOI: 10.1103/PhysRevA.77.052315  1
2008 Lo CC, Bokor J, Schenkel T, He J, Tyryshkin AM, Lyon SA. Spin-dependent scattering off neutral antimony donors in Si28 field-effect transistors (Applied Physics Letters (2007) 91 (242106)) Applied Physics Letters. 92. DOI: 10.1063/1.2890086  1
2008 Sabouret G, Bradbury FR, Shankar S, Bert JA, Lyon SA. Signal and charge transfer efficiency of few electrons clocked on microscopic superfluid helium channels Applied Physics Letters. 92. DOI: 10.1063/1.2884693  1
2008 Morton JJL, Tyryshkin AM, Brown RM, Shankar S, Lovett BW, Ardavan A, Schenkel T, Haller EE, Ager JW, Lyon SA. Solid-state quantum memory using the 31P nuclear spin Nature. 455: 1085-1088. DOI: 10.1038/nature07295  1
2008 Shankar S, Tyryshkin AM, Avasthi S, Lyon SA. Spin resonance of 2D electrons in a large-area silicon MOSFET Physica E: Low-Dimensional Systems and Nanostructures. 40: 1659-1661. DOI: 10.1016/j.physe.2007.10.030  1
2007 Chi E, Lyon SA, Martonosi M. Tailoring quantum architectures to implementation style: A quantum computer for mobile and persistent qubits Proceedings - International Symposium On Computer Architecture. 198-209. DOI: 10.1145/1250662.1250687  1
2007 Mitrović VF, Horvatić M, Berthier C, Lyon SA, Shayegan M. NMR study of large skyrmions in Al0.13 Ga0.87 As quantum wells Physical Review B - Condensed Matter and Materials Physics. 76. DOI: 10.1103/PhysRevB.76.115335  1
2007 Morton JJL, Tyryshkin AM, Ardavan A, Porfyrakis K, Lyon SA, Briggs GAD. Environmental effects on electron spin relaxation in N@ C60 Physical Review B - Condensed Matter and Materials Physics. 76. DOI: 10.1103/PhysRevB.76.085418  1
2007 Lai K, Pan W, Tsui DC, Lyon S, Mühlberger M, Schäffler F. Linear temperature dependence of the conductivity in Si two-dimensional electrons near the apparent metal-to-insulator transition Physical Review B - Condensed Matter and Materials Physics. 75. DOI: 10.1103/PhysRevB.75.033314  1
2007 Malissa H, Jantsch W, Chen G, Lichtenberger H, Fromherz T, Schäffler F, Bauer G, Tyryshkin A, Lyon S, Wilamowski Z. Spin relaxation in SiGe islands Aip Conference Proceedings. 893: 1317-1318. DOI: 10.1063/1.2730387  1
2007 Ardavan A, Morton JJL, Benjamin SC, Porfyrakis K, Briggs GAD, Tyryshkin AM, Lyon SA. Manipulation of quantum information in N@C60 using electron and nuclear magnetic resonance Physica Status Solidi (B) Basic Research. 244: 3874-3878. DOI: 10.1002/pssb.200776192  1
2006 Bradbury FR, Tyryshkin AM, Sabouret G, Bokor J, Schenkel T, Lyon SA. Stark tuning of donor electron spins in silicon. Physical Review Letters. 97: 176404. PMID 17155489 DOI: 10.1103/PhysRevLett.97.176404  1
2006 Tyryshkin AM, Morton JJ, Ardavan A, Lyon SA. Davies electron-nuclear double resonance revisited: enhanced sensitivity and nuclear spin relaxation. The Journal of Chemical Physics. 124: 234508. PMID 16821930 DOI: 10.1063/1.2204915  1
2006 Lai K, Pan W, Tsui DC, Lyon S, Mühlberger M, Schäffler F. Intervalley gap anomaly of two-dimensional electrons in silicon. Physical Review Letters. 96: 076805. PMID 16606125 DOI: 10.1103/PhysRevLett.96.076805  1
2006 Morton JJ, Tyryshkin AM, Ardavan A, Porfyrakis K, Lyon SA, Andrew D Briggs G. Electron spin relaxation of N@C60 in CS2 in CS2. The Journal of Chemical Physics. 124: 14508. PMID 16409042 DOI: 10.1063/1.2147262  1
2006 Wasserman D, Howard SH, Gmachl C, Lyon SA, Cederberg J, Shaner EA. Mid-infrared electroluminescence from InAs self-assembled quantum dots Proceedings of Spie - the International Society For Optical Engineering. 6386: 63860E. DOI: 10.1117/12.689191  1
2006 Lai K, Lu TM, Pan W, Tsui DC, Lyon S, Liu J, Xie YH, Mühlberger M, Schäffler F. Valley splitting of Si Si1-x Gex heterostructures in tilted magnetic fields Physical Review B - Condensed Matter and Materials Physics. 73. DOI: 10.1103/PhysRevB.73.161301  1
2006 Lyon SA. Spin-based quantum computing using electrons on liquid helium Physical Review a - Atomic, Molecular, and Optical Physics. 74. DOI: 10.1103/PhysRevA.74.052338  1
2006 Benjamin SC, Ardavan A, Briggs GAD, Britz DA, Gunlycke D, Jefferson J, Jones MAG, Leigh DF, Lovett BW, Khlobystov AN, Lyon SA, Morton JJL, Porfyrakis K, Sambrook MR, Tyryshkin AM. Towards a fullerene-based quantum computer Journal of Physics Condensed Matter. 18: S867-S883. DOI: 10.1088/0953-8984/18/21/S12  1
2006 Tyryshkin AM, Morton JJL, Benjamin SC, Ardavan A, Briggs GAD, Ager JW, Lyon SA. Coherence of spin qubits in silicon Journal of Physics Condensed Matter. 18: S783-S794. DOI: 10.1088/0953-8984/18/21/S06  1
2006 Lai K, Pan W, Tsui DC, Lyon SA, Mühlberger M, Schäffler F. Metal-insulator transition of 2D electrons in a modulation doped Si/Si 1-xGex heterostructure Aip Conference Proceedings. 850: 1448-1449. DOI: 10.1063/1.2355247  1
2006 Sabouret G, Lyon SA. Measurement of the charge transfer efficiency of electrons clocked on superfluid helium Applied Physics Letters. 88. DOI: 10.1063/1.2213009  1
2006 Wasserman D, Gmachl C, Lyon SA, Shaner EA. Multiple wavelength anisotropically polarized mid-infrared emission from InAs quantum dots Applied Physics Letters. 88. DOI: 10.1063/1.2202824  1
2006 Schenkel T, Liddle JA, Persaud A, Tyryshkin AM, Lyon SA, De Sousa R, Whaley KB, Bokor J, Shangkuan J, Chakarov I. Electrical activation and electron spin coherence of ultralow dose antimony implants in silicon Applied Physics Letters. 88. DOI: 10.1063/1.2182068  1
2006 Morton JJL, Tyryshkin AM, Ardavan A, Benjamin SC, Porfyrakis K, Lyon SA, Briggs GAD. Bang-bang control of fullerene qubits using ultrafast phase gates Nature Physics. 2: 40-43. DOI: 10.1038/nphys192  1
2006 Tyryshkin AM, Lyon SA, Schenkel T, Bokor J, Chu J, Jantsch W, Schäffler F, Truitt JL, Coppersmith SN, Eriksson MA. Electron spin coherence in Si Physica E: Low-Dimensional Systems and Nanostructures. 35: 257-263. DOI: 10.1016/j.physe.2006.08.021  1
2006 Lai K, Pan W, Tsui DC, Lyon S, Mühlberger M, Schäffler F. Quantum Hall ferromagnetism in a two-valley strained Si quantum well Physica E: Low-Dimensional Systems and Nanostructures. 34: 176-178. DOI: 10.1016/j.physe.2006.03.009  1
2006 Yang A, Lian HJ, Thewalt MLW, Uemura M, Sagara A, Itoh KM, Haller EE, Ager JW, Lyon SA. Isotopic mass dependence of the lattice parameter in silicon determined by measurement of strain-induced splitting of impurity bound exciton transitions Physica B: Condensed Matter. 376: 54-56. DOI: 10.1016/j.physb.2005.12.015  1
2006 Malissa H, Jantsch W, Chen G, Gruber D, Lichtenberger H, Schäffler F, Wilamowski Z, Tyryshkin A, Lyon S. Investigation of the spin properties of electrons in zero-dimensional SiGe structures by electron paramagnetic resonance Materials Science and Engineering B: Solid-State Materials For Advanced Technology. 126: 172-175. DOI: 10.1016/j.mseb.2005.09.052  1
2006 Schenkel T, Liddle JA, Bokor J, Persaud A, Park SJ, Shangkuan J, Lo CC, Kwon S, Lyon SA, Tyryshkin AM, Rangelow IW, Sarov Y, Schneider DH, Ager J, de Sousa R. Strategies for integration of donor electron spin qubits in silicon Microelectronic Engineering. 83: 1814-1817. DOI: 10.1016/j.mee.2006.01.234  1
2006 Morton JJL, Tyryshkin AM, Ardavan A, Benjamin SC, Porfyrakis K, Lyon SA, Briggs GAD. The N@C60 nuclear spin qubit: Bang-bang decoupling and ultrafast phase gates Physica Status Solidi (B) Basic Research. 243: 3028-3031. DOI: 10.1002/pssb.200669118  1
2005 Morton JJ, Tyryshkin AM, Ardavan A, Porfyrakis K, Lyon SA, Briggs GA. High fidelity single qubit operations using pulsed electron paramagnetic resonance. Physical Review Letters. 95: 200501. PMID 16384042 DOI: 10.1103/PhysRevLett.95.200501  1
2005 Morton JJ, Tyryshkin AM, Ardavan A, Porfyrakis K, Lyon SA, Briggs GA. A new mechanism for electron spin echo envelope modulation. The Journal of Chemical Physics. 122: 174504. PMID 15910042 DOI: 10.1063/1.1888585  1
2005 Tyryshkin AM, Lyon SA, Jantsch W, Schäffler F. Spin manipulation of free two-dimensional electrons in Si/SiGe quantum wells Physical Review Letters. 94. DOI: 10.1103/PhysRevLett.94.126802  1
2005 Winkler R, Tutuc E, Papadakis SJ, Melinte S, Shayegan M, Wasserman D, Lyon SA. Anomalous spin polarization of GaAs two-dimensional hole systems Physical Review B - Condensed Matter and Materials Physics. 72. DOI: 10.1103/PhysRevB.72.195321  1
2005 Lai K, Pan W, Tsui DC, Lyon SA, Mühlberger M, Schäffler F. Two-dimensional metal-insulator transition and in-plane magnetoresistance in a high-mobility strained Si quantum well Physical Review B - Condensed Matter and Materials Physics. 72. DOI: 10.1103/PhysRevB.72.081313  1
2005 Morton JJL, Tyryshkin AM, Ardavan A, Porfyrakis K, Lyon SA, Briggs GAD. Measuring errors in single-qubit rotations by pulsed electron paramagnetic resonance Physical Review a - Atomic, Molecular, and Optical Physics. 71. DOI: 10.1103/PhysRevA.71.012332  1
2005 Austin MD, Zhang W, Ge H, Wasserman D, Lyon SA, Chou SY. 6 nm half-pitch lines and 0.04 νm 2 static random access memory patterns by nanoimprint lithography Nanotechnology. 16: 1058-1061. DOI: 10.1088/0957-4484/16/8/010  1
2005 Lai K, Ye PD, Pan W, Tsui DC, Lyon SA, Mühlberger M, Schäffler F. Modulation of the high mobility two-dimensional electrons in SiSiGe using atomic-layer-deposited gate dielectric Applied Physics Letters. 87: 1-3. DOI: 10.1063/1.2076439  1
2005 Wasserman D, Shaner EA, Lyon SA, Hadjipanayi M, Maciel AC, Ryan JF. (110) InAs quantum dots: Growth, single-dot luminescence and cleaved edge alignment Materials Research Society Symposium Proceedings. 829: 21-32.  1
2004 Lai K, Pan W, Tsui DC, Lyon S, Mühlberger M, Schäffler F. Two-flux composite fermion series of the fractional quantum Hall states in strained Si. Physical Review Letters. 93: 156805. PMID 15524923 DOI: 10.1103/PhysRevLett.93.156805  1
2004 Shaner EA, Lyon SA. Picosecond time-resolved two-dimensional ballistic electron transport. Physical Review Letters. 93: 037402. PMID 15323867 DOI: 10.1103/PhysRevLett.93.037402  1
2004 Lai K, Pan W, Tsui DC, Lyon S, Muhlberger M, Schaffler F. The two-flux composite fermion series of fractional quantum Hall states in strained (100) Si International Journal of Modern Physics B. 18: 3533-3535. DOI: 10.1142/S0217979204026950  1
2004 Lyon SA. Relaxation of candidate electron spin qubits Proceedings of Spie - the International Society For Optical Engineering. 5472: 97-106. DOI: 10.1117/12.550634  1
2004 Shaner EA, Lyon SA, Engel LW. Picosecond electrical excitation of a two-dimensional electron gas Proceedings of Spie - the International Society For Optical Engineering. 5352: 364-371. DOI: 10.1117/12.533181  1
2004 Wan A, Menon V, Forrest SR, Wasserman D, Lyon SA, Kahn A. Characterization of GaAs grown by molecular beam epitaxy on vicinal Ge(100) substrates Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 22: 1893-1898. DOI: 10.1116/1.1774203  1
2004 Wasserman D, Lyon SA. Cleaved-edge overgrowth of aligned quantum dots on strained layers of InGaAs Applied Physics Letters. 85: 5352-5354. DOI: 10.1063/1.1827351  1
2004 Habib B, Tutuc E, Melinte S, Shayegan M, Wasserman D, Lyon SA, Winkler R. Negative differential Rashba effect in two-dimensional hole systems Applied Physics Letters. 85: 3151-3153. DOI: 10.1063/1.1806543  1
2004 Hadjipanayi M, Maciel AC, Ryan JF, Wasserman D, Lyon SA. Scanning near-field photoluminescence mapping of (110) InAs-GaAs self-assembled quantum dots Applied Physics Letters. 85: 2535-2537. DOI: 10.1063/1.1800272  1
2004 Austin MD, Ge H, Wu W, Li M, Yu Z, Wasserman D, Lyon SA, Chou SY. Fabrication of 5 nm linewidth and 14 nm pitch features by nanoimprint lithography Applied Physics Letters. 84: 5299-5301. DOI: 10.1063/1.1766071  1
2004 Zhang P, Sadler CM, Lyon SA, Martonosi M. Hardware design experiences in ZebraNet Sensys'04 - Proceedings of the Second International Conference On Embedded Networked Sensor Systems. 227-238.  1
2004 Habib B, Tutuc E, Melinte S, Shayegan M, Wasserman D, Lyon SA, Winkler R. Spin splitting in GaAs (100) two-dimensional holes Physical Review B - Condensed Matter and Materials Physics. 69: 1133111-1133114.  1
2003 Wasserman D, Lyon SA, Hadjipanayi M, Maciel A, Ryan JF. Formation of self-assembled InAs quantum dots on (110) GaAs substrates Applied Physics Letters. 83: 5050-5052. DOI: 10.1063/1.1633683  1
2003 Wilamowski Z, Jantsch W, Sandersfeld N, Mühlberger M, Schäffler F, Lyon S. Spin relaxation and g-factor of two-dimensional electrons in Si/SiGe quantum wells Physica E: Low-Dimensional Systems and Nanostructures. 16: 111-120. DOI: 10.1016/S1386-9477(02)00582-9  1
2003 Tyryshkin AM, Lyon SA, Astashkin AV, Raitsimring AM. Electron spin relaxation times of phosphorus donors in silicon Physical Review B - Condensed Matter and Materials Physics. 68: 1932071-1932074.  1
2002 Wasserman D, Lyon SA. Midinfrared luminescence from InAs quantum dots in unipolar devices Applied Physics Letters. 81: 2848-2850. DOI: 10.1063/1.1511537  1
2002 Xie Z, Lyon SA. 4-terminal reflection and transmission in an Aharonov-Bohm ring Physica E: Low-Dimensional Systems and Nanostructures. 12: 766-769. DOI: 10.1016/S1386-9477(01)00393-9  1
2002 Shaner EA, Lyon SA. Time-resolved impulse response of the magnetoplasmon resonance in a two-dimensional electron gas Physical Review B - Condensed Matter and Materials Physics. 66: 414021-414023.  1
2002 Papadakis SJ, De Poortere EP, Manoharan HC, Yau JB, Shayegan M, Lyon SA. Low-field magnetoresistance in GaAs two-dimensional holes Physical Review B - Condensed Matter and Materials Physics. 65: 2453121-2453127.  1
2001 Wasserman D, Lyon SA. Mid-infrared electroluminescence from InAs quantum dots in p-n junctions and unipolar tunneling structures Physica Status Solidi (B) Basic Research. 224: 585-590. DOI: 10.1002/1521-3951(200103)224:2<585::AID-PSSB585>3.0.CO;2-3  1
2000 Hornmark ET, Lyon SA, Poindexter EH, Young CF. New features of electrically detected magnetic resonance in silicon p-n diodes Solid State Communications. 116: 279-282.  1
2000 Shukla SP, Shayegan M, Parihar SR, Lyon SA, Cooper NR, Kiselev AA. Large skyrmions in an Al0.13Ga0.87As quantum well Physical Review B - Condensed Matter and Materials Physics. 61: 4469-4472.  1
1999 Xie Z, Lyon SA. Ballistic transport in p-type GaAs Applied Physics Letters. 75: 2085-2087.  1
1999 Berryman KW, Lyon SA, Segev M, Engholm JR. Optical saturation of mid-infrared transitions in self-assembled InAs quantum dots: Evidence for an LO phonon bottleneck Iqec, International Quantum Electronics Conference Proceedings. 16.  1
1997 Berryman KW, Lyon SA, Segev M. Electronic structure and optical behavior of self-assembled InAs quantum dots Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 15: 1045-1050.  1
1997 Petrov MV, Lyon SA. Ballistic electron luminescence studies of superlattice minibands Applied Physics Letters. 70: 3263-3265.  1
1997 Papadakis SJ, Lu JP, Shayegan M, Parihar SR, Lyon SA. Interlayer charge transfer in double-quantum-well systems Physical Review B - Condensed Matter and Materials Physics. 55: 9294-9297.  1
1997 Berryman KW, Lyon SA, Segev M. Mid-infrared photoconductivity in InAs quantum dots Applied Physics Letters. 70: 1861-1863.  1
1996 Kurdak C, Chen CJ, Tsui DC, Lu JP, Shayegan M, Parihar S, Lyon SA. Experimental investigation of the Pauli exclusion principle using noise in coherent electron transport Surface Science. 361: 705-708. DOI: 10.1016/0039-6028(96)00504-3  1
1996 Petrov MV, Parihar SR, Lyon SA. Tunneling properties of AlxGa1-xAs and AlAs barriers studied by ballistic electron luminescence spectroscopy Physical Review B - Condensed Matter and Materials Physics. 54: 13868-13877.  1
1995 Kurdak C, Tsui DC, Parihar S, Lyon SA, Shayegan M. Electron temperature in low-dimensional wires using thermal noise measurements Applied Physics Letters. 67: 386. DOI: 10.1063/1.114637  1
1994 Kane MG, Sun KW, Lyon SA. Ultrafast carrier-carrier scattering among photoexcited nonequilibrium carriers in GaAs Physical Review B. 50: 7428-7438. DOI: 10.1103/PhysRevB.50.7428  1
1994 Gross P, Ramakrishna V, Vilallonga E, Rabitz H, Littman M, Lyon SA, Shayegan M. Optimally designed potentials for control of electron-wave scattering in semiconductor nanodevices Physical Review B. 49: 11100-11110. DOI: 10.1103/PhysRevB.49.11100  1
1994 Kane MG, Sun KW, Lyon SA. Ultrafast dynamics of non-thermal carriers in GaAs Semiconductor Science and Technology. 9: 697-699. DOI: 10.1088/0268-1242/9/5S/079  1
1994 Ying X, Lu JP, Heremans JJ, Santos MB, Shayegan M, Lyon SA, Littman M, Gross P, Rabitz H. Quantum reflection and transmission of ballistic two-dimensional electrons by a potential barrier Applied Physics Letters. 65: 1154-1156. DOI: 10.1063/1.112126  1
1994 Kurdak C, Tsui DC, Parihar S, Santos MB, Manoharan HC, Lyon SA, Shayegan M. Surface resonant tunneling transistor: A new negative transconductance device Applied Physics Letters. 64: 610-612. DOI: 10.1063/1.111065  1
1993 Xiao X, Sturm JC, Parihar SR, Lyon SA, Meyerhofer D, Palfrey S, Shallcross FV. Silicide/Strained Si1-xGex Schottky-Barrier Infrared Detectors Ieee Electron Device Letters. 14: 199-201. DOI: 10.1109/55.215151  1
1993 Parihar SR, Lyon SA. Impurity levels in heterostructures for optical absorption and emission Applied Physics Letters. 63: 2396-2398. DOI: 10.1063/1.110486  1
1993 Kurdak C, Tsui DC, Parihar S, Manoharan H, Lyon SA, Shayegan M. New resonant tunneling transistor fabricated by cleaved edge overgrowth Proceedings of the Ieee Cornell Conference On Advanced Concepts in High Speed Semiconductor Devices and Circuits. 265-269.  1
1992 Hublitz K, Lyon SA. Light emission from hot carriers in Si MOSFETS Semiconductor Science and Technology. 7: B567-B569. DOI: 10.1088/0268-1242/7/3B/149  1
1992 Lyon SA, Petersen CL. Ballistic electron luminescence spectroscopy Semiconductor Science and Technology. 7: B21-B25. DOI: 10.1088/0268-1242/7/3B/005  1
1992 Parihar SR, Lyon SA. Ellipsoidal valley donor binding energies in a quantum well Solid State Communications. 84: 885-888. DOI: 10.1016/0038-1098(92)90452-F  1
1990 Petersen CL, Lyon SA. Observation of hot-electron energy loss through the emission of phonon-plasmon coupled modes in GaAs Physical Review Letters. 65: 760-763. DOI: 10.1103/PhysRevLett.65.760  1
1990 Campbell IH, Fauchet PM, Lyon SA, Nemanich RJ. Photoluminescence above the Tauc gap in a-Si:H Physical Review B. 41: 9871-9879. DOI: 10.1103/PhysRevB.41.9871  1
1990 Zrenner A, Worlock JM, Florez LT, Harbison JP, Lyon SA. Intrinsic bistability in an optically pumped quantum well structure Applied Physics Letters. 56: 1763-1765. DOI: 10.1063/1.103093  1
1990 Zrenner A, Worlock JM, Florez LT, Harbison JP, Lyon SA. Intrinsic bistability in an optically pumped asymmetric quantum well structure Superlattices and Microstructures. 7: 327-330. DOI: 10.1016/0749-6036(90)90219-W  1
1990 Lyon SA. Long wavelength quantum well detectors: can they compete? Surface Science. 228: 508-513. DOI: 10.1016/0039-6028(90)90365-F  1
1990 Watanabe Y, Wang ZZ, Lyon SA, Ong NP, Tsui DC, Tarascon JM, Wang E. Mid-infrared reflectivity of single crystal Nd2-xCexCu4O4-y Solid State Communications. 74: 757-761. DOI: 10.1016/0038-1098(90)90930-A  1
1990 Lyon SA. Generation of interface states at the Si-SiO2 interface Proceedings - the Electrochemical Society. 90: 342-348.  1
1989 Chen YH, Lyon SA. Photoluminescence and Diffusivity of Free Excitons in Doped Silicon Ieee Journal of Quantum Electronics. 25: 1053-1055. DOI: 10.1109/3.27999  1
1989 Kenkare PU, Lyon SA. IIB-2 Interface State Generation by Negative Gate-bias Irradiation of MOS Structures Ieee Transactions On Electron Devices. 36: 2603-2604. DOI: 10.1109/16.43700  1
1989 Petersen CL, Frei MR, Lyon SA. Electroluminescence of ballistically injected electrons in AlGaAs/GaAs heterodiodes Physical Review Letters. 63: 2849-2852. DOI: 10.1103/PhysRevLett.63.2849  1
1989 Watanabe Y, Wang ZZ, Lyon SA, Tsui DC, Ong NP, Tarascon JM, Barboux P. Mid-infrared reflectivity and ellipsometry measurements on single-crystal YBa2Cu3O7 and Bi2Sr2CuO6+y Physical Review B. 40: 6884-6889. DOI: 10.1103/PhysRevB.40.6884  1
1989 Kenkare PU, Lyon SA. Relationship between trapped holes, positive ions, and interface states in irradiated Si-SiO2 structures Applied Physics Letters. 55: 2328-2330. DOI: 10.1063/1.102358  1
1989 Parihar SR, Lyon SA, Santos M, Shayegan M. Voltage tunable quantum well infrared detector Applied Physics Letters. 55: 2417-2419. DOI: 10.1063/1.102032  1
1989 Lyon SA. Interface states generated by the injection of electrons and holes into SiO2 Applied Surface Science. 39: 552-564. DOI: 10.1016/0169-4332(89)90471-6  1
1989 Petersen CL, Frei MR, Lyon SA. Hot electron electroluminescence in AlGaAs/GaAs heterostructures Solid State Electronics. 32: 1919-1923. DOI: 10.1016/0038-1101(89)90336-5  1
1989 Fauchet PM, Campbell IH, Lyon SA, Nemanich RJ. Luminescence above the Tauc gap in a-Si:H Journal of Non-Crystalline Solids. 114: 277-279. DOI: 10.1016/0022-3093(89)90136-1  1
1988 Yang CH, Lyon SA, Tu CW. Photoluminescence from the two-dimensional electron gas at GaAs/AlGaAs single heterojunctions Applied Physics Letters. 53: 285-287. DOI: 10.1063/1.99915  1
1988 Wang SJ, Sung JM, Lyon SA. Relationship between hole trapping and interface state generation in metal-oxide-silicon structures Applied Physics Letters. 52: 1431-1433. DOI: 10.1063/1.99690  1
1988 Goossen KW, Lyon SA, Alavi K. Photovoltaic quantum well infrared detector Applied Physics Letters. 52: 1701-1703. DOI: 10.1063/1.99022  1
1988 Schafer SA, Lyon SA. Reply to "Comment on A new model of the rapid initial oxidation of silicon'" Journal of Applied Physics. 64: 1610-1611. DOI: 10.1063/1.341802  1
1988 Goossen KW, Lyon SA. Performance aspects of a quantum-well detector Journal of Applied Physics. 63: 5149-5153. DOI: 10.1063/1.340417  1
1988 Goossen KW, Lyon SA, Alavi K. Grating enhancement of quantum well detector response Applied Physics Letters. 53: 1027-1029. DOI: 10.1063/1.100054  1
1987 Goossen KW, Lyon SA, Alavi K. Conduction-band offset determination in GaAs-AlxGa1-xAs through measurement of infrared internal photoemission Physical Review B. 36: 9370-9373. DOI: 10.1103/PhysRevB.36.9370  1
1987 Sung JM, Lyon SA. Cycling of defects between trapped negative charge and interface states at the Si-SiO2 interface Applied Physics Letters. 50: 1152-1154. DOI: 10.1063/1.97946  1
1987 Yang CH, Lyon SA, Tu CW. Photoluminescence from two dimensional electrons at single heterojunctions Superlattices and Microstructures. 3: 269-271. DOI: 10.1016/0749-6036(87)90070-X  1
1987 Lyon SA. Thermalization of hot carriers in quantum wells Superlattices and Microstructures. 3: 261-267. DOI: 10.1016/0749-6036(87)90069-3  1
1987 Wang SJ, Sung JM, Lyon SA. RELATIONSHIP BETWEEN THE LOCATION OF TRAPPED HOLES AND INTERFACE STATE GENERATION IN THE Si-SiO//2 SYSTEM Technical Digest - International Electron Devices Meeting. 905-908.  1
1986 Chang ST, Wu JK, Lyon SA. Amphoteric defects at the Si-SiO2 interface Applied Physics Letters. 48: 662-664. DOI: 10.1063/1.96736  1
1986 Kolodzey J, Schwarz R, Aljishi S, Shen DS, Campbell I, Fauchet PM, Lyon SA, Wagner S. Carrier scattering at periodic a-Si:H,F barriers in a-Si,Ge:H,F alloys Superlattices and Microstructures. 2: 391-396. DOI: 10.1016/0749-6036(86)90054-6  1
1986 Lyon SA. Spectroscopy of hot carriers in semiconductors Journal of Luminescence. 35: 121-154. DOI: 10.1016/0022-2313(86)90066-9  1
1986 Kolodzey J, Aljishi S, Schwarz R, Shen DS, Quinlan S, Lyon SA, Wagner S. ELECTRON AND HOLE TRANSPORT PERPENDICULAR TO THE PLANES OF a-Si:H/a-Si,Ge:H COMPOSITIONAL SUPERLATTICES Materials Research Society Symposia Proceedings. 70: 429-434.  1
1986 Chang ST, Lyon SA. LOCATION OF POSITIVE CHARGE TRAPPED NEAR THE Si-SiO//2 INTERFACE AT LOW TEMPERATURE Applied Physics Letters. 48: 136-138.  1
1985 Yang CH, Carlson-Swindle JM, Lyon SA, Worlock JM. Hot-electron relaxation in GaAs quantum wells Physical Review Letters. 55: 2359-2361. DOI: 10.1103/PhysRevLett.55.2359  1
1985 Goossen KW, Lyon SA. Grating enhanced quantum well detector Applied Physics Letters. 47: 1257-1259. DOI: 10.1063/1.96434  1
1985 Schafer SA, Lyon SA. New model of the rapid initial oxidation of silicon Applied Physics Letters. 47: 154-156. DOI: 10.1063/1.96246  1
1985 Yang CH, Lyon SA. Dynamical screening of the electron-optical phonon interaction in two dimensions Physica B+C. 134: 309-313. DOI: 10.1016/0378-4363(85)90361-4  1
1985 Yang CH, Lyon SA. Thermalization of hot electrons in quantum wells Physica B+C. 134: 305-308. DOI: 10.1016/0378-4363(85)90360-2  1
1984 Chang ST, Johnson NM, Lyon SA. IIIB-6 Analysis of Current Transport and Charge Trapping in Ultrathin Nitrided Oxide MIS Capacitors Ieee Transactions On Electron Devices. 31: 1972. DOI: 10.1109/T-ED.1984.21854  0.44
1984 Chang ST, Johnson NM, Lyon SA. Capture and tunnel emission of electrons by deep levels in ultrathin nitrided oxides on silicon Applied Physics Letters. 44: 316-318. DOI: 10.1063/1.94737  1
1984 Chen YH, Lyon SA. REFLECTIVITY OF SILICON-ON-SAPPHIRE DURING PULSED LASER ANNEALING Materials Research Society Symposia Proceedings. 23: 173-177.  1
1983 Lyon SA, Worlock JM. Role of electromagnetic resonances in the surface-enhanced raman effect Physical Review Letters. 51: 593-596. DOI: 10.1103/PhysRevLett.51.593  1
1983 Wu JK, Lyon SA, Johnson WC. Temperature and field dependence of the generation of interface states in the Si-SiO2 system after high-field stress Applied Physics Letters. 42: 585-587. DOI: 10.1063/1.94010  1
1983 Lyon SA, Chen YH, Lin JF, Worlock JM. Optical transmission at 3.39 μm during pulsed laser annealing of silicon Applied Physics Letters. 42: 978-980. DOI: 10.1063/1.93821  1
1983 Lyon SA, Nemanich RJ. Raman scattering from hydrogenated amorphous silicon Physica B+C. 117: 871-873. DOI: 10.1016/0378-4363(83)90679-4  1
1982 Sunaga T, Lyon SA, Johnson WC. Interface-state generation during avalanche injection of electrons from Si into SiO2 Applied Physics Letters. 40: 810-811. DOI: 10.1063/1.93268  1
1982 Pang S, Lyon SA, Johnson WC. Interface state generation in the Si-SiO2 system by photoinjecting electrons from an Al field plate Applied Physics Letters. 40: 709-711. DOI: 10.1063/1.93243  1
1982 Lyon SA, Nemanich RJ, Johnson NM, Biegelsen DK. Microstrain in laser-crystallized silicon islands on fused silica Applied Physics Letters. 40: 316-318. DOI: 10.1063/1.93075  1
1982 SCHAFER SA, LYON SA. WAVELENGTH DEPENDENCE OF LASER-ENHANCED OXIDATION OF SILICON J Vac Sci Technol. 422-425.  1
1981 Schafer SA, Lyon SA. OPTICALLY ENHANCED OXIDATION OF SEMICONDUCTORS Journal of Vacuum Science & Technology. 19: 494-497. DOI: 10.1116/1.571045  1
1979 Hunter AT, Lyon SA, Smith DL, McGill TC. Transient decay of satellite lines of bound excitons in Si: P Physical Review B. 20: 2431-2437. DOI: 10.1103/PhysRevB.20.2431  1
1979 Elliott KR, Lyon SA, Smith DL, McGill TC. Evidence for an excited level of the neutral indium acceptor in silicon Physics Letters A. 70: 52-54. DOI: 10.1016/0375-9601(79)90325-6  1
1979 Mitchard GS, Lyon SA, Elliott KR, McGill TC. Observation of long lifetime lines in photoluminescence from Si: In Solid State Communications. 29: 425-429. DOI: 10.1016/0038-1098(79)91209-2  1
1978 Lyon SA, Smith DL, McGill TC. Thermodynamic determination of work functions of bound multiexciton complexes Physical Review Letters. 41: 56-60. DOI: 10.1103/PhysRevLett.41.56  1
1978 Chen M, Lyon SA, Smith DL, McGill TC. Transients of the photoluminescence intensities of the electron-hole droplets in pure and doped Ge Physical Review B. 17: 4744-4756. DOI: 10.1103/PhysRevB.17.4744  1
1978 Lyon SA, Smith DL, McGill TC. Edge luminescence spectra of acceptors in Si: Implications for multiexciton complexes Physical Review B. 17: 2620-2624. DOI: 10.1103/PhysRevB.17.2620  1
1978 Osbourn GC, Lyon SA, Elliott KR, Smith DL, McGill TC. Auger and radiative recombination of acceptor bound excitons in semiconductors Solid State Electronics. 21: 1339-1342. DOI: 10.1016/0038-1101(78)90203-4  1
1978 Lyon SA, Smith DL, McGill TC. Luminescence of bound exciton and bound multiexciton complexes in Si:Li Solid State Communications. 28: 317-320. DOI: 10.1016/0038-1098(78)90432-5  1
1978 Lyon SA, Osbourn GC, Smith DL, McGill TC. BOUND EXCITON LIFETIMES FOR ACCEPTORS IN Si Solid State Communications. 425-428. DOI: 10.1016/0038-1098(77)91000-6  1
1977 Chen M, Lyon SA, Elliott KR, Smith DL, McGill TC. Transients of the photoluminescence from EHD in doped and undoped Ge Il Nuovo Cimento B Series 11. 39: 622-627. DOI: 10.1007/BF02725801  1
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